JPS5789261A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5789261A JPS5789261A JP16646380A JP16646380A JPS5789261A JP S5789261 A JPS5789261 A JP S5789261A JP 16646380 A JP16646380 A JP 16646380A JP 16646380 A JP16646380 A JP 16646380A JP S5789261 A JPS5789261 A JP S5789261A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- patterning
- oxidizing
- opening
- photo resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000004090 dissolution Methods 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To carry out recess forming with fine controllability that regulates source and drain saturation current by removing compound conductor crystal after oxidizing by the anode oxidization. CONSTITUTION:An evaporated film of Au Ge and Au is formed on the surface of a GaAs active layer 12 grown on a GaAs substrate 11, and a source electrode 13 and a drain electrode 14 are formed by patterning. Then a photo resist film 15 is formed and the opening 15a is made to form a gate electrode by patterning. An anode oxide region 16 is formed by oxidizing the exposed area of the opening 15a. A recess 17 is formed by removing the anode oxide region 16 using dilute hydrochloric acid. An aluminum Schottky electrode 18 is formed by removing the photo resist film 15 by dissolution after depositing aluminum by vacuum evaporation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16646380A JPS5789261A (en) | 1980-11-25 | 1980-11-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16646380A JPS5789261A (en) | 1980-11-25 | 1980-11-25 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5789261A true JPS5789261A (en) | 1982-06-03 |
Family
ID=15831858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16646380A Pending JPS5789261A (en) | 1980-11-25 | 1980-11-25 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5789261A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59224176A (en) * | 1983-06-03 | 1984-12-17 | Nec Corp | Manufacture of field effect transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5279881A (en) * | 1975-12-26 | 1977-07-05 | Nec Corp | Production of gaas schottky barrier gate type field effect transistor |
| JPS5450275A (en) * | 1977-09-27 | 1979-04-20 | Matsushita Electric Ind Co Ltd | Production of schottky barrier type semiconductor device |
| JPS55124267A (en) * | 1979-03-20 | 1980-09-25 | Matsushita Electric Ind Co Ltd | Fabricating method of semiconductor device |
-
1980
- 1980-11-25 JP JP16646380A patent/JPS5789261A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5279881A (en) * | 1975-12-26 | 1977-07-05 | Nec Corp | Production of gaas schottky barrier gate type field effect transistor |
| JPS5450275A (en) * | 1977-09-27 | 1979-04-20 | Matsushita Electric Ind Co Ltd | Production of schottky barrier type semiconductor device |
| JPS55124267A (en) * | 1979-03-20 | 1980-09-25 | Matsushita Electric Ind Co Ltd | Fabricating method of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59224176A (en) * | 1983-06-03 | 1984-12-17 | Nec Corp | Manufacture of field effect transistor |
| JPH047101B2 (en) * | 1983-06-03 | 1992-02-07 | Nippon Electric Co |
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