JPS56104435A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56104435A JPS56104435A JP736680A JP736680A JPS56104435A JP S56104435 A JPS56104435 A JP S56104435A JP 736680 A JP736680 A JP 736680A JP 736680 A JP736680 A JP 736680A JP S56104435 A JPS56104435 A JP S56104435A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- polycrystalline film
- substrate
- heat treatment
- high temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a semiconductor device having stable characteristics by forming oxide films on both the front and the back surfaces of N<->N<+> type substrate, forming a base region and an emitter region on the back surface after preforming a polycrystalline film thereon and removing the polycrystalline film after high temperature heat treatment such as diffusion or the like is finished. CONSTITUTION:The oxide films 3, 4 are formed on the front and the back surfaces of the substrate 2, and then the polycrystalline film 19 is preformed on the back surface thereof. Subsequently, a photoresist film is formed thereon, the base region 7 and the emitter region 9 are formed thereon, and after the high temperature heat treatment such as the impurity diffusion of the substrate 2 is completed, the polycrystalline film 19 is removed therefrom. Thus, the semiconductor device having stable characteristics can be obtained with preferable workability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP736680A JPS56104435A (en) | 1980-01-23 | 1980-01-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP736680A JPS56104435A (en) | 1980-01-23 | 1980-01-23 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56104435A true JPS56104435A (en) | 1981-08-20 |
Family
ID=11663963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP736680A Pending JPS56104435A (en) | 1980-01-23 | 1980-01-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56104435A (en) |
-
1980
- 1980-01-23 JP JP736680A patent/JPS56104435A/en active Pending
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