[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS57113214A - Manufacture of amorphous semiconductor film - Google Patents

Manufacture of amorphous semiconductor film

Info

Publication number
JPS57113214A
JPS57113214A JP18810680A JP18810680A JPS57113214A JP S57113214 A JPS57113214 A JP S57113214A JP 18810680 A JP18810680 A JP 18810680A JP 18810680 A JP18810680 A JP 18810680A JP S57113214 A JPS57113214 A JP S57113214A
Authority
JP
Japan
Prior art keywords
electrode
substrate
semiconductor film
substrate holder
amorphous semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18810680A
Other languages
Japanese (ja)
Inventor
Hajime Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP18810680A priority Critical patent/JPS57113214A/en
Publication of JPS57113214A publication Critical patent/JPS57113214A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)

Abstract

PURPOSE:To improve the quality of a film by heating a substrate holder and pair electrodes, thereby preventing the isolation of amorphous silicon decomposed by a plasma. CONSTITUTION:In a device for forming an amorphous semiconductor film by introducing monosilane, phosphine, diboran, etc. to a vacuum tank 31, and producing a discharge phenomenon in the tank, a porous electrode 33 is arranged as a high frequency electrode between a substrate holder 32 and a opposed electrode 35 operating also as gas introduction shower. The holder 32 and the opposed electrode 35 are heated by heaters 36, 40. Thus, amorphous silicon decomposed by plasma is adhered to the substrate, porous electrode, opposed electrode or periphery as compared with the device having only heater for the back surface of the substrate holder. Thus, the silicon may not be isolated and not adhered as fine dusts on the substrate.
JP18810680A 1980-12-29 1980-12-29 Manufacture of amorphous semiconductor film Pending JPS57113214A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18810680A JPS57113214A (en) 1980-12-29 1980-12-29 Manufacture of amorphous semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18810680A JPS57113214A (en) 1980-12-29 1980-12-29 Manufacture of amorphous semiconductor film

Publications (1)

Publication Number Publication Date
JPS57113214A true JPS57113214A (en) 1982-07-14

Family

ID=16217801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18810680A Pending JPS57113214A (en) 1980-12-29 1980-12-29 Manufacture of amorphous semiconductor film

Country Status (1)

Country Link
JP (1) JPS57113214A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182131A (en) * 1984-02-28 1985-09-17 Sumitomo Electric Ind Ltd Thin film manufacturing device
JPS61121429A (en) * 1984-11-19 1986-06-09 Matsushita Electric Ind Co Ltd Plasma cvd device
JPS61271822A (en) * 1985-05-27 1986-12-02 Fujitsu Ltd Continuous vapor growth apparatus
JPH02222526A (en) * 1989-02-23 1990-09-05 Mitsubishi Electric Corp Chemical vapor deposition device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182131A (en) * 1984-02-28 1985-09-17 Sumitomo Electric Ind Ltd Thin film manufacturing device
JPS61121429A (en) * 1984-11-19 1986-06-09 Matsushita Electric Ind Co Ltd Plasma cvd device
JPS61271822A (en) * 1985-05-27 1986-12-02 Fujitsu Ltd Continuous vapor growth apparatus
JPH0691017B2 (en) * 1985-05-27 1994-11-14 富士通株式会社 Continuous vapor phase growth equipment
JPH02222526A (en) * 1989-02-23 1990-09-05 Mitsubishi Electric Corp Chemical vapor deposition device

Similar Documents

Publication Publication Date Title
JPS5730325A (en) Manufacture of amorphous silicon thin film
JPS57113214A (en) Manufacture of amorphous semiconductor film
JPS57202729A (en) Manufacture of semiconductor device
JPS5778546A (en) Production of photoconductive silicon layer
JPS56169116A (en) Manufacture of amorphous silicon film
JPS57159016A (en) Manufacture of amorphous silicon film
JPS5562160A (en) Forming method for film by glow discharge
JPS5785221A (en) Manufacture of amorphous semiconductor thin film
JPS577129A (en) Treating method and device for sputtering
JPS5713738A (en) Vapor-phase growing apparatus
JPS5789217A (en) Manufacturing device of semiconductor
JPS5678422A (en) Preparation of electrically conductive transparent thin film
JPS5778131A (en) Manufacture of amorphous semiconductor fil,
JPS57134925A (en) Plasma cvd film producer
JPS5651878A (en) Manufacture of mis composition amorphous silicon solar cell
JPS5756923A (en) Manufacture of thin film
JPH0891987A (en) Apparatus for plasma chemical vapor deposition
JPS5986214A (en) Manufacture of amorphous semiconductor
JPS57187935A (en) Forming of fine crystalline amorphous silicon film
JPS58102569A (en) Manufacture of amorphous silicon solar battery
JPS5723216A (en) Manufacture of plasma reactor and semiconductor element
JPH041730Y2 (en)
JPS56131297A (en) Speaker diaphragm
JPS5742331A (en) Manufacture for deposited film
JPS57153436A (en) Semiconductor device