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JPS5324277A - Semiconductor devic e and its production - Google Patents

Semiconductor devic e and its production

Info

Publication number
JPS5324277A
JPS5324277A JP9907676A JP9907676A JPS5324277A JP S5324277 A JPS5324277 A JP S5324277A JP 9907676 A JP9907676 A JP 9907676A JP 9907676 A JP9907676 A JP 9907676A JP S5324277 A JPS5324277 A JP S5324277A
Authority
JP
Japan
Prior art keywords
production
devic
semiconductor
semiconductor devic
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9907676A
Other languages
Japanese (ja)
Other versions
JPS641941B2 (en
Inventor
Reiji Takashina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9907676A priority Critical patent/JPS5324277A/en
Publication of JPS5324277A publication Critical patent/JPS5324277A/en
Publication of JPS641941B2 publication Critical patent/JPS641941B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain a semiconductor device for high frequency by forming a polySi layer, which is an impurity diffusion source and where the electrodes of the diffused layers thereof are provided, in perpendicular form in relation to a substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP9907676A 1976-08-18 1976-08-18 Semiconductor devic e and its production Granted JPS5324277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9907676A JPS5324277A (en) 1976-08-18 1976-08-18 Semiconductor devic e and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9907676A JPS5324277A (en) 1976-08-18 1976-08-18 Semiconductor devic e and its production

Publications (2)

Publication Number Publication Date
JPS5324277A true JPS5324277A (en) 1978-03-06
JPS641941B2 JPS641941B2 (en) 1989-01-13

Family

ID=14237817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9907676A Granted JPS5324277A (en) 1976-08-18 1976-08-18 Semiconductor devic e and its production

Country Status (1)

Country Link
JP (1) JPS5324277A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155771A (en) * 1978-05-29 1979-12-08 Nec Corp Pattern forming method
JPS5563827A (en) * 1978-11-03 1980-05-14 Ibm Method of forming narrow mask opening in silicon substrate
JPS5563844A (en) * 1978-11-03 1980-05-14 Ibm Method of forming insulator between conductive layers
JPS5591130A (en) * 1978-12-27 1980-07-10 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5617066A (en) * 1979-07-16 1981-02-18 Trw Inc Method of manufacturing semiconductor electric converter
JPS56106622U (en) * 1980-01-16 1981-08-19
JPS56110983U (en) * 1980-01-24 1981-08-27
JPS56137657A (en) * 1980-03-29 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5832434A (en) * 1981-08-20 1983-02-25 Toshiba Corp Manufacture of semiconductor device
JPS6297332A (en) * 1986-10-24 1987-05-06 Matsushita Electric Ind Co Ltd Etching method

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155771A (en) * 1978-05-29 1979-12-08 Nec Corp Pattern forming method
JPS6326536B2 (en) * 1978-05-29 1988-05-30 Nippon Electric Co
JPS5563827A (en) * 1978-11-03 1980-05-14 Ibm Method of forming narrow mask opening in silicon substrate
JPS5563844A (en) * 1978-11-03 1980-05-14 Ibm Method of forming insulator between conductive layers
JPS592187B2 (en) * 1978-11-03 1984-01-17 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン Method of forming an insulator between conductive layers
JPS5857902B2 (en) * 1978-11-03 1983-12-22 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション How to form narrow mask openings
JPS5591130A (en) * 1978-12-27 1980-07-10 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5617066A (en) * 1979-07-16 1981-02-18 Trw Inc Method of manufacturing semiconductor electric converter
JPS5731789Y2 (en) * 1980-01-16 1982-07-13
JPS56106622U (en) * 1980-01-16 1981-08-19
JPS56110983U (en) * 1980-01-24 1981-08-27
JPS6222395Y2 (en) * 1980-01-24 1987-06-06
JPS56137657A (en) * 1980-03-29 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5832434A (en) * 1981-08-20 1983-02-25 Toshiba Corp Manufacture of semiconductor device
JPS6320383B2 (en) * 1981-08-20 1988-04-27 Tokyo Shibaura Electric Co
JPS6297332A (en) * 1986-10-24 1987-05-06 Matsushita Electric Ind Co Ltd Etching method
JPH0257701B2 (en) * 1986-10-24 1990-12-05 Matsushita Electric Ind Co Ltd

Also Published As

Publication number Publication date
JPS641941B2 (en) 1989-01-13

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