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JPS55113365A - Mos integrated circuit - Google Patents

Mos integrated circuit

Info

Publication number
JPS55113365A
JPS55113365A JP2042379A JP2042379A JPS55113365A JP S55113365 A JPS55113365 A JP S55113365A JP 2042379 A JP2042379 A JP 2042379A JP 2042379 A JP2042379 A JP 2042379A JP S55113365 A JPS55113365 A JP S55113365A
Authority
JP
Japan
Prior art keywords
source
voltage
transistor
power source
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2042379A
Other languages
Japanese (ja)
Other versions
JPS641940B2 (en
Inventor
Kazukiyo Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2042379A priority Critical patent/JPS55113365A/en
Publication of JPS55113365A publication Critical patent/JPS55113365A/en
Publication of JPS641940B2 publication Critical patent/JPS641940B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a low power consuming and high speed MOS.IC by a method wherein the MOS.IC is composed of a positive voltage-delivering power source, a control signal source and a DAS.MOS transistor.
CONSTITUTION: A control signal source 200 is connected to the gate of a DAS.MOS transistor 201, the source of a transistor 201 is connected to a power source 202 and the drain is connected to a load circuit 1000 through an output node 99. The load circuit 1000 is connected to the power source 201 through the earth. In this construction, a positive voltage is applied from the signal source to the transistor 201, and a positive output voltage of power source 202 is applied to the load 1000. In this case, when the drain potential is higher than the source potential, the transistor 201 operates as an enhancement type. But if the potential relation is reversed, the threshold voltage of gate becomes nearly 0 volt. Therefore when the voltage of the signal source 200 and of the source 202 are equal, the voltage of the circuit 1000 becomes equal to the voltage of power source, and the circuit 1000 operates in high speed.
COPYRIGHT: (C)1980,JPO&Japio
JP2042379A 1979-02-22 1979-02-22 Mos integrated circuit Granted JPS55113365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2042379A JPS55113365A (en) 1979-02-22 1979-02-22 Mos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2042379A JPS55113365A (en) 1979-02-22 1979-02-22 Mos integrated circuit

Publications (2)

Publication Number Publication Date
JPS55113365A true JPS55113365A (en) 1980-09-01
JPS641940B2 JPS641940B2 (en) 1989-01-13

Family

ID=12026615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2042379A Granted JPS55113365A (en) 1979-02-22 1979-02-22 Mos integrated circuit

Country Status (1)

Country Link
JP (1) JPS55113365A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50123279A (en) * 1974-03-16 1975-09-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50123279A (en) * 1974-03-16 1975-09-27

Also Published As

Publication number Publication date
JPS641940B2 (en) 1989-01-13

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