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JPS5486239A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5486239A
JPS5486239A JP15481877A JP15481877A JPS5486239A JP S5486239 A JPS5486239 A JP S5486239A JP 15481877 A JP15481877 A JP 15481877A JP 15481877 A JP15481877 A JP 15481877A JP S5486239 A JPS5486239 A JP S5486239A
Authority
JP
Japan
Prior art keywords
potential
gate
source
increase
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15481877A
Other languages
Japanese (ja)
Other versions
JPS6043585B2 (en
Inventor
Mitsuru Sakamoto
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP52154818A priority Critical patent/JPS6043585B2/en
Publication of JPS5486239A publication Critical patent/JPS5486239A/en
Publication of JPS6043585B2 publication Critical patent/JPS6043585B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To make a decoding determinative speed faster than conventional one by increasing a gate potential by an electrostatic capacitor according to the increase in potential of a drain or source part. CONSTITUTION:Driving-part transistors 91 to 98 are connected to load-part transistor 101, and logical-part transistor 102 is provided which obtain an logical output from the connection part. Then the output is supplied to depletion field effect transistor 104 so that electrostatic capacity Cp will exist between source N2 and gate N3 in latch part 20. This electrostatic capacity allows the potential of gate N3 to increase according to the potential increase of the drain or source N2 part, so that the decoding determinative speed can be made faster than conventional one.
JP52154818A 1977-12-21 1977-12-21 semiconductor integrated circuit Expired JPS6043585B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52154818A JPS6043585B2 (en) 1977-12-21 1977-12-21 semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52154818A JPS6043585B2 (en) 1977-12-21 1977-12-21 semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5486239A true JPS5486239A (en) 1979-07-09
JPS6043585B2 JPS6043585B2 (en) 1985-09-28

Family

ID=15592535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52154818A Expired JPS6043585B2 (en) 1977-12-21 1977-12-21 semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6043585B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0142376A2 (en) * 1983-11-16 1985-05-22 Fujitsu Limited Dynamic random access memory
EP0201185A2 (en) * 1985-03-30 1986-11-12 Fujitsu Limited Semiconductor memory device
JPS6218897U (en) * 1986-07-14 1987-02-04

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0142376A2 (en) * 1983-11-16 1985-05-22 Fujitsu Limited Dynamic random access memory
EP0201185A2 (en) * 1985-03-30 1986-11-12 Fujitsu Limited Semiconductor memory device
JPS6218897U (en) * 1986-07-14 1987-02-04
JPS6241438Y2 (en) * 1986-07-14 1987-10-23

Also Published As

Publication number Publication date
JPS6043585B2 (en) 1985-09-28

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