JPS55102272A - Method of fabricating mos semiconductor device - Google Patents
Method of fabricating mos semiconductor deviceInfo
- Publication number
- JPS55102272A JPS55102272A JP925979A JP925979A JPS55102272A JP S55102272 A JPS55102272 A JP S55102272A JP 925979 A JP925979 A JP 925979A JP 925979 A JP925979 A JP 925979A JP S55102272 A JPS55102272 A JP S55102272A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- film
- doped layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Non-Volatile Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE: To obtain MOS semiconductor elements having different threshold values without a photomasking step by forming first channel doped layer on a substrate, forming second channel doped layer with the electrode of the first MOS element as a mask, and then forming the electrode of the second MOS element.
CONSTITUTION: An SiO2 film 12 is coated on a silicon substrate 10, impurity ion 14 is implanted through the film 12, and the first channel doped layer 16 is formed on the surface of the substrate 10. Then, the first gate electrode layer 24 of polycrystalline silicon is formed in predetermined region on the film 12. With the layer 24 and the exposed film 12 as masks ion 20 is implanted. Thus, the second channel doped layer 22 of different impurity density from other portion is formed on the other portion than the portion under the layer 24 while retaining the first doped layer 16 under the layer 24. Thereafter, the second gate electrode layer 26 of polycrystalline silicon is similarly formed on the layer 12 at the position isolated from the layer 24. A doped region 28 is formed in the substrate 10 not covered with the layers 24 and 26 by ion implantation process to obtain MOS semiconductor elements Q1, Q2 having different threshold values from each other.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP925979A JPS55102272A (en) | 1979-01-31 | 1979-01-31 | Method of fabricating mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP925979A JPS55102272A (en) | 1979-01-31 | 1979-01-31 | Method of fabricating mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55102272A true JPS55102272A (en) | 1980-08-05 |
Family
ID=11715418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP925979A Pending JPS55102272A (en) | 1979-01-31 | 1979-01-31 | Method of fabricating mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55102272A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6043856A (en) * | 1983-08-22 | 1985-03-08 | Toshiba Corp | Semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5411687A (en) * | 1977-06-28 | 1979-01-27 | Oki Electric Ind Co Ltd | Manufacture for semiconductor integrated circuit |
| JPS5448179A (en) * | 1977-09-26 | 1979-04-16 | Hitachi Ltd | Mis-type semiconductor integrated circuit device |
-
1979
- 1979-01-31 JP JP925979A patent/JPS55102272A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5411687A (en) * | 1977-06-28 | 1979-01-27 | Oki Electric Ind Co Ltd | Manufacture for semiconductor integrated circuit |
| JPS5448179A (en) * | 1977-09-26 | 1979-04-16 | Hitachi Ltd | Mis-type semiconductor integrated circuit device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6043856A (en) * | 1983-08-22 | 1985-03-08 | Toshiba Corp | Semiconductor device |
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