JPS5797674A - Manufacture of mos semiconductor device - Google Patents
Manufacture of mos semiconductor deviceInfo
- Publication number
- JPS5797674A JPS5797674A JP17425380A JP17425380A JPS5797674A JP S5797674 A JPS5797674 A JP S5797674A JP 17425380 A JP17425380 A JP 17425380A JP 17425380 A JP17425380 A JP 17425380A JP S5797674 A JPS5797674 A JP S5797674A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- field
- oxidized
- preventing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- -1 boron ions Chemical class 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005755 formation reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To improve the characteristics of an MOS semiconductor element by performing the formations of a field inversion preventing impurity layer and a punch-through preventing impurity layer in the same step, thereby simplifying the steps and suppressing the lateral diffusion of the field inversion preventing impurity. CONSTITUTION:After a field oxidized film 35 and a gate oxidized film 36 are formed on a p type silicon substrate 31, boron ions are, for example, injected in the amount of 7X10<11> pieces/cm<2> at 300keV, thereby forming a p<+> impurity layer 37 under the films 35 and the element forming region. Subsequently, a gate electrode formed of polycrystalline silicon film and an n<+> source and drain region formed of polycrystalline silicon film are formed on the film 36, an oxidized silicon film is accumulated on the overall surface, a contacting hole is opened, and a lead electrode is arranged. Accordingly, the layer 37 becomes an inversion preventing layer under the field oxidized film and becomes a punch-through preventing layer under the element forming region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17425380A JPS5797674A (en) | 1980-12-10 | 1980-12-10 | Manufacture of mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17425380A JPS5797674A (en) | 1980-12-10 | 1980-12-10 | Manufacture of mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5797674A true JPS5797674A (en) | 1982-06-17 |
Family
ID=15975388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17425380A Pending JPS5797674A (en) | 1980-12-10 | 1980-12-10 | Manufacture of mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5797674A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02177561A (en) * | 1988-12-28 | 1990-07-10 | Toshiba Corp | Semiconductor non-volatile memory and manufacture thereof |
-
1980
- 1980-12-10 JP JP17425380A patent/JPS5797674A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02177561A (en) * | 1988-12-28 | 1990-07-10 | Toshiba Corp | Semiconductor non-volatile memory and manufacture thereof |
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