JPS5796524A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5796524A JPS5796524A JP17300180A JP17300180A JPS5796524A JP S5796524 A JPS5796524 A JP S5796524A JP 17300180 A JP17300180 A JP 17300180A JP 17300180 A JP17300180 A JP 17300180A JP S5796524 A JPS5796524 A JP S5796524A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon nitride
- aluminum
- nitride film
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 5
- 229910052782 aluminium Inorganic materials 0.000 abstract 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 5
- 238000009792 diffusion process Methods 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To eliminate the trouble when an aluminum film is used as an ion resisting ion implanting mask, by forming a double layered film comprising the aluminum film and a plasma silicon nitride film on a silicon dioxide film. CONSTITUTION:The aluminum film 4 is deposited on the upper surface of the silicon dioxide film 2. The plasma silicon nitride film 5 is formed on said film 4. The silicon nitride film 5 on the part other than the part, where a P type diffusion layer 9' is to be formed and the part of a gate electrode 3', is etched and removed. Then a resist 6 is separated, and the aluminum film 4 is etched and removed with the silicon nitride film as a mask. Then ions are implanted, the P type diffusion layer 9' and a P type polycrystal silicon electrode 3'' are formed. Then the silicon nitride film 5 and the aluminum film 4 are removed, and thereafter the film thickness of the silicon dioxide film 2 on the P type diffusion layer 9' is increased to the specified value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17300180A JPS5796524A (en) | 1980-12-08 | 1980-12-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17300180A JPS5796524A (en) | 1980-12-08 | 1980-12-08 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5796524A true JPS5796524A (en) | 1982-06-15 |
Family
ID=15952341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17300180A Pending JPS5796524A (en) | 1980-12-08 | 1980-12-08 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5796524A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60239017A (en) * | 1984-05-11 | 1985-11-27 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor device |
-
1980
- 1980-12-08 JP JP17300180A patent/JPS5796524A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60239017A (en) * | 1984-05-11 | 1985-11-27 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5599744A (en) | Manufacture of semiconductor device | |
| JPS5796524A (en) | Manufacture of semiconductor device | |
| JPS56155531A (en) | Manufacture of semiconductor device | |
| JPS57170571A (en) | Manufacture of mos type semiconductor device | |
| JPS52124860A (en) | Electrode formation method for semiconductor devices | |
| JPS56164550A (en) | Manufacture of semiconductor device | |
| JPS56126957A (en) | Manufacture of semiconductor device | |
| JPS57106169A (en) | Manufacture of semiconductor device | |
| JPS5451383A (en) | Production of semiconductor element | |
| JPS56111241A (en) | Preparation of semiconductor device | |
| JPS5533037A (en) | Manufacture of semiconductor device | |
| JPS5489594A (en) | Manufacture for integrated circuit | |
| JPS55162270A (en) | Semiconductor device | |
| JPS56147447A (en) | Manufacture of mosic | |
| JPS55102272A (en) | Method of fabricating mos semiconductor device | |
| JPS5670669A (en) | Longitudinal semiconductor device | |
| JPS5752166A (en) | Manufacture of semiconductor device | |
| JPS5642373A (en) | Manufacture of semiconductor device | |
| JPS6451647A (en) | Manufacture of trench type capacitor | |
| JPS6484662A (en) | Manufacture of semiconductor device | |
| JPS54129983A (en) | Manufacture of semiconductor device | |
| JPS5575235A (en) | Method of fabricating semiconductor device | |
| JPS5655049A (en) | Etching process | |
| JPS57173956A (en) | Manufacture of semiconductor device | |
| JPS56104470A (en) | Semiconductor device and manufacture thereof |