JPH10102234A - Sputtering device and formation of coating using this device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prolong the interval of maintenance by heating and controlling a sticking preventing shield and a target shield. SOLUTION: In this device, a substrate 3 is heated and controlled, e.g. to >=200 deg.C by a heating heater 5, and simultaneously, a target shield 6 and a sticking preventing shield 7 are heated by a heater 8. The temps. of the shields at this time are controlled by a temp. controlling unit 10 so as to be regulated to the ones increased by radiation from plasma and the heater 5 in the process of coating formation or above. After the temps. are stabilized, electric power is fed from a power source 11, and sputtering is executed. After the coating is formed to a required coating thickness, the feed of the electric power is stopped, but, the heating control is continued as it is till the following coating forming stage. In this way, the shields are always heated, by which the temp. changes of the shields are eliminated, and the peeling of the stuck coating with different expansion coefficients is prevented to suppress the increase of particles, so that the exchanging period of the shields can be prolonged.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus for forming a thin film on a substrate in a process of manufacturing a semiconductor electronic component or the like, and a film forming method using the apparatus.

[0002]

2. Description of the Related Art Conventionally, a sputtering apparatus has been used to heat a substrate to about 300 ° C. in order to reduce outgassing from a substrate on which a film is to be formed and to improve adhesion between the substrate and a film-forming substance. A target having temperature control means and a deposition prevention shield for preventing a sputtered film from adhering to the periphery of a vacuum vessel accommodating the entire apparatus, and a target for correcting an electric field of a target portion and preventing abnormal discharge. A configuration in which a shield is provided is general. When the film forming process is completed for each substrate, the exhaust system is continuously operated, but the heating means is temporarily stopped to prepare for the film formation of the next substrate.

[0003]

However, the conventional sputtering apparatus has a problem that the sputtered film adhered to the deposition shield or the target shield comes off and adheres to the substrate being formed, thereby lowering the yield. was there. In order to prevent this problem, it is necessary to set a short maintenance interval for replacing the shields.

[0004] An object of the present invention is to solve the above-mentioned problems and to form a film with a high yield, and to increase the maintenance interval to increase the production efficiency.

[0005]

A first object of the present invention is to provide a sputtering system having a substrate holder, a substrate heating means, a sputter electrode, a deposition shield, and a target shield in a vacuum system having an exhaust system and a gas introduction system. And a heating / temperature control means is provided for each of the deposition shield and the target shield.

A second aspect of the present invention is to provide a sputtering apparatus in which a potential control means is provided on the above-mentioned deposition shield and target shield.

Further, the present invention is characterized in that the first sputter apparatus is used to continuously form a crystalline material on a plurality of substrates while constantly heating the deposition shield and the target shield. Using the film method or the second sputtering device, the deposition shield and the target shield are constantly heated and at the same time, at least at the time of film formation, a negative potential is controlled to continuously form a crystal material on a plurality of substrates. It is intended to provide a film forming method characterized by the above.

Further, the present invention relates to the above-mentioned first or second aspect.
A method of depositing an amorphous substance using a sputtering apparatus, wherein the deposition shield and the target shield are heated each time the deposition process of one substrate is completed, and the amorphous adhered to the shield is heated. A film formation method characterized by crystallizing a substance.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS As a film forming process proceeds, a sputtered substance adheres to a deposition shield or a target shield. At this time, the temperature of the shields has risen due to plasma or radiation from a heater that heats the substrate.
Therefore, when the power of the heaters is turned off after the film forming process is completed, the radiation to the shields is also eliminated, and the temperature of the shields decreases. Then, since the coefficients of expansion of the shields and the film attached to the surface thereof are different, a difference in shrinkage occurs between the shields due to a decrease in temperature after the film formation, and the film peels off from the shields, and the film adheres to the substrate. They adhere and cause pattern defects and short-circuits, lowering the product yield. The deposits are generally called particles, and the shields are replaced before the particles increase and the yield decreases.

In the present invention, the shields are provided with heating / temperature control means to constantly heat the shields, thereby eliminating temperature fluctuations of the shields and preventing peeling of the adhered films having different expansion coefficients. Therefore, it is possible to suppress the increase of particles, and to extend the time for replacing the shield.

Further, in the present invention, by applying a potential control means to the shields to control the potential, the adhesion of the adhered film to the shields can be enhanced and the peeling thereof can be suppressed.

Further, in the present invention, when forming a film of an amorphous substance which is easily peeled off at a low temperature, after the film forming step is completed, the shields are heated to remove the non-adhered material adhered to the shield surface. The film made of a crystalline material is crystallized to enhance the adhesion to shields and to suppress the peeling.

An embodiment of the present invention will be described with reference to an example of a process of forming a film of ITO (indium tin oxide).

FIG. 1 is a schematic view of a first sputtering apparatus according to the present invention. In the drawing, reference numeral 1 denotes an exhaust system and a gas introduction system (not shown), and a vacuum vessel for introducing a gas from the introduction system to cause plasma discharge, 2 a target, and 3 a target 2
4 is a substrate holder for fixing the substrate 3, 5 is a heater for heating the substrate, 6 is a target for correcting the electric field of the target 2 and preventing abnormal discharge. Reference numeral 7 denotes a shield for preventing the sputtered film from adhering to the periphery of the vacuum vessel 1. Reference numeral 8 denotes a heater for heating the shield and a target shield. Reference numeral 9 denotes a temperature for detecting the temperature of the shields. A thermocouple 10 is a temperature control unit for controlling the temperature of the shields 6 and 7 to be constant even when the state in the vacuum vessel 1 fluctuates, 11 is a DC power supply for supplying power to a target, and 12 is a sputter electrode. It is.

First, the substrate 3 and the substrate holder 4 are transported into the vacuum vessel 1 by a load lock and transport mechanism (not shown), set in a predetermined position, and then evacuated by a vacuum system (vacuum pump) (not shown). The inside is evacuated to the order of 10 ^-5 Pa. Next, a sputtering gas is introduced, and the degree of vacuum is set to 0.3 to
Control to 1.3 Pa.

Next, the substrate 3 is heated for 200
The heating of the shields 6 and 7 is controlled by the temperature control unit 10 at the same time as the heating is controlled to at least ° C. At this time, the temperature of the shield is controlled so as to be equal to or higher than a temperature that is increased by plasma or radiation from the heater 3 during film formation.

After the temperature is stabilized, a power of 11 to 2.0 W / cm ² is supplied to the target area from the power supply 11 to perform sputtering.

After the film is formed to the required thickness, the power of the power supply 11 is stopped, but the heating control of the shields 6 and 7 is continued until the next substrate film forming step.

FIG. 2 is a schematic view of a second sputtering apparatus according to the present invention. In order to make the target shield 6 and the deposition shield 7 floating, an insulating material 12 and a bias power supply for controlling the potential are used. 13 are arranged.
The power supply 13 allows the shields 6, 7 to be -10 to -10.
By applying a potential of -100 V and performing a sputtering operation, a bombard effect is generated on the films attached to the shields 6 and 7, and the adhesion of the attached films is improved.

Further, using the sputtering apparatus of the present invention,
When the amorphous ITO (amorphous ITO) is formed, the heaters 5 and 8 are turned off to form a film. After the film formation is completed, the substrate 3 is taken out, and the shields 6 and 7 are heated by the heater 8. Heat at 200 ° C. or more for 30 minutes or more to crystallize the amorphous ITO film attached to the shields 6 and 7. Thereby, peeling of the film attached to the shields 6 and 7 is suppressed.

[0021]

【Example】

[Example 1] Crystal IT using the sputtering apparatus shown in FIG.
An O film was formed. In this embodiment, a glass substrate is used as the substrate 3 and argon and 0.1.
4% oxygen is introduced into the vacuum vessel 1 and the degree of vacuum is set to 0.4 Pa
And Further, the temperature of the substrate 3 is set to 220 ° C., the temperature of the shields 6 and 7 is kept at 150 ° C. or more, and 0.57 W / c
A power of m ² was supplied to form a crystalline ITO film having a thickness of about 70 nm. The temperature of the shields 6 and 7 was always kept at 150 ° C. or higher. When films were continuously formed under these conditions, FIG.
As shown in the figure, the increase of particles was suppressed until 2000 substrates were formed.

Comparative Example 1 A crystalline ITO film was continuously formed in the same manner as in Example 1 except that the shields 6 and 7 were not heated. As a result, as shown in FIG.
Particles increased at about 00 sheets, requiring maintenance.

[Embodiment 2] In the apparatus of FIG. 2, the potential of the shields 6 and 7 is set to -50 V by the bias power supply 13.
The film formation was performed in the same manner as in Example 1 except that the film thickness was controlled.
As a result, an increase in particles was suppressed up to 2,300 substrates.

Example 3 A glass substrate was used as the substrate 3, argon and 0.4% oxygen were introduced as sputtering gases, the degree of vacuum was set to 0.4 Pa, and the substrate 3 and the shields 6, 7 were heated. Instead, an amorphous ITO film was formed to a thickness of about 70 nm. After taking out the substrate on which the film formation was completed, the shields 6 and 7 were heated at 200 ° C. or more for 30 minutes or more. When this process was repeated, the increase in particles was suppressed up to 1000 substrates.

In the scratch test of the amorphous ITO film formed on the substrate 3 (needle tip diameter: 10 μmφ), 25
gf, but the ITO film adhering to the shields 6 and 7 is 70 gf or more (because measurement is impossible), and the ITO film adhering to the shields 6 and 7 has enhanced adhesion and is less likely to peel off. I understood that.

[Comparative Example 2] A film was formed in the same manner as in Example 3 except that the shields 6 and 7 were not heated in the film forming process gap. Particles increased when the film was formed on about 200 substrates.

[0027]

As described above, according to the present invention,
Since the peeling of the film adhering to the target shield and the deposition shield is suppressed, the replacement time of these shields can be extended, and the maintenance interval can be lengthened. Therefore, the frequency of stopping the apparatus for maintenance is reduced, and the productivity is improved.

In the present invention, both the crystalline substance and the amorphous substance can be handled by changing the heating time of the shields.

[Brief description of the drawings]

FIG. 1 is a schematic view of a first sputtering apparatus of the present invention.

FIG. 2 is a schematic view of a second sputtering apparatus of the present invention.

FIG. 3 is a diagram showing the results of Example 1 and Comparative Example 1 of the present invention.

[Description of Signs] 1 Vacuum container 2 Target 3 Substrate 4 Substrate holder 5 Substrate heater 6 Target shield 7 Deposition shield 8 Shield heater 9 Thermocouple 10 Temperature control unit 11 DC power supply 12 Insulation material 13 Bias power supply

Claims (5)

[Claims] 1. A vacuum system having an exhaust system and a gas introduction system,
What is claimed is: 1. A sputtering apparatus comprising a substrate holder, a substrate heating means, a sputter electrode, a deposition shield, and a target shield, wherein the deposition shield and the target shield are provided with heating and temperature control means, respectively. 2. The apparatus according to claim 1, wherein said deposition shield and said target shield are provided with a potential control means.
The sputtering apparatus as described in the above. 3. A method for forming a crystalline material using a sputtering apparatus according to claim 1, wherein the crystalline material is formed on a plurality of substrates continuously while continuously heating the deposition shield and the target shield. A film forming method characterized by forming a film. 4. A method for forming a crystalline substance using a sputtering apparatus according to claim 2, wherein the deposition shield and the target shield are constantly heated and at the same time, at least at the time of film formation, are controlled to have a negative potential. A film of a crystalline substance on a plurality of substrates by using the method. 5. A method for forming a film of an amorphous material using a sputtering apparatus according to claim 1, wherein the deposition shield and the target shield are replaced each time a film forming process for one substrate is completed. A film forming method characterized by heating to crystallize an amorphous substance attached to the shield.