CN108573845B - Reaction chamber and semiconductor processing equipment - Google Patents
Reaction chamber and semiconductor processing equipment Download PDFInfo
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- CN108573845B CN108573845B CN201710131861.7A CN201710131861A CN108573845B CN 108573845 B CN108573845 B CN 108573845B CN 201710131861 A CN201710131861 A CN 201710131861A CN 108573845 B CN108573845 B CN 108573845B
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 79
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000012545 processing Methods 0.000 title claims abstract description 21
- 239000011810 insulating material Substances 0.000 claims description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 23
- 230000008569 process Effects 0.000 abstract description 23
- 239000000919 ceramic Substances 0.000 description 12
- 239000000356 contaminant Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
The invention provides a reaction chamber and semiconductor processing equipment, which comprise a Faraday shielding ring and an insulating ring for supporting the Faraday shielding ring, wherein a concave part is arranged on a supporting surface of the insulating ring, a convex part is arranged on a supported surface of the Faraday shielding ring and is positioned in the concave part, the concave part comprises a first side surface facing outwards, the convex part comprises a second side surface facing inwards, and the first side surface is attached to the second side surface; the concave portion is provided so that the convex portion is not restricted by the concave portion when thermally expanded. The reaction chamber provided by the invention can not only ensure that the insulating ring is not damaged in a high-temperature state, but also ensure that the Faraday shielding ring is accurately positioned, thereby improving the process uniformity, the stability and the equipment reliability.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a reaction chamber and semiconductor processing equipment.
Background
With the development of moore's law, in the production of semiconductor processing equipment for very large scale integrated circuits, high aspect ratio structures, such as vias, trenches and vias, are often metallized, which increases the ion density in the plasma in the reaction chamber to achieve better deep hole deposition capability. In order to increase the specific gravity of ions in the chamber, the conventional semiconductor processing equipment adds a radio frequency coil at the periphery of the reaction chamber for coupling electromagnetic energy into the reaction chamber, thereby increasing the specific gravity of ions and obtaining good process performance.
In a reaction chamber for metal deposition, a metal shield is easily formed on an inner wall of the chamber using an insulating medium, resulting in shielding electromagnetic energy outside the chamber, and for this purpose, a faraday shield device is applied to the reaction chamber for ensuring smooth coupling of radio frequency energy into the reaction chamber through a radio frequency coil.
Fig. 1 is a block diagram of a conventional semiconductor processing apparatus. As shown in fig. 1, the semiconductor processing apparatus includes a reaction chamber 101, an rf coil 105 and an rf power source 107, wherein a susceptor 103 is disposed in the reaction chamber 101 for carrying a workpiece 104 to be processed; a target 102 is arranged on the top of the reaction chamber 101 and on the top of the pedestal 103; the radio frequency coil 105 is arranged around the outside of the side wall (made of insulating medium material) of the reaction chamber 101; the rf power source 107 is connected to the rf coil 105 through the matching unit 106 for applying rf power to the rf coil 105. Further, a faraday shield ring 108 is provided inside the sidewall of the reaction chamber 101, and the faraday shield ring 108 is supported by a ceramic ring 109.
In practical applications, the faraday shield ring 108 is required to be arranged coaxially with the sidewall of the reaction chamber 101 to ensure the process uniformity, and as shown in fig. 2, the faraday shield ring 108 and the ceramic ring 109 are arranged coaxially by connecting the faraday shield ring 108 and the ceramic ring 109 together by using a screw 110, so as to indirectly realize the coaxiality of the faraday shield ring 108 and the sidewall of the reaction chamber 101. However, in the process, the faraday shield ring 108 is heated to expand outward under the dual actions of the sputtering particle bombardment and the radio frequency energy, and the expansion amount of the connected ceramic ring 109 is smaller than that of the faraday shield ring 108 due to the smaller thermal expansion coefficient, so that a certain gap needs to be left between the screw 110 and the ceramic ring 109 to offset the difference of the expansion amount. However, this would have the problem that:
in the stable stage of the process, the temperature of the faraday shielding ring 108 is about 100 ℃, and in this case, the diameter expansion amount of the faraday shielding ring 108 is about 1mm by calculation, so that the distance between the screw 110 and the ceramic ring 109 is greater than 0.5mm to ensure that the ceramic ring 109 is not damaged, and the distance is small to meet the coaxial requirement. However, when a new target is cleaned to remove oxides and contaminants from its surface, the faraday shield ring 108 is subjected to a large temperature rise (over 300 ℃) due to the continuous bombardment, and the faraday shield ring 108 expands about 3mm in diameter beyond the allowable component variation, which may cause the ceramic ring 109 to be pulled apart. In addition, the distance between the screw 110 and the ceramic ring 109 is not allowed to exceed 1.5mm, otherwise the faraday shield ring 108 cannot be accurately positioned, which causes the problem that the faraday shield ring 108 is not coaxial with the sidewall of the reaction chamber 101, which affects the final process result.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a reaction chamber and semiconductor processing equipment, which can not only ensure that an insulating ring is not damaged in a high-temperature state, but also ensure that a Faraday shielding ring is accurately positioned, thereby improving the process uniformity, the stability and the equipment reliability.
The invention provides a reaction chamber, comprising a Faraday shielding ring and an insulating ring for supporting the Faraday shielding ring, wherein a concave part is arranged on a supporting surface of the insulating ring, and a convex part is arranged on a supported surface of the Faraday shielding ring, and the convex part is positioned in the concave part,
the concave part comprises a first side surface facing outwards, the convex part comprises a second side surface facing inwards, and the first side surface is attached to the second side surface;
the concave portion is provided so that the convex portion is not restricted by the concave portion when thermally expanded.
Preferably, the recess is a step formed at an edge of the support surface of the insulating ring.
Preferably, the concave part further comprises a third side surface facing in the inward direction, and the convex part comprises a fourth side surface facing in the outward direction; and,
the third side face is opposite to the fourth side face, and a first gap is arranged between the third side face and the fourth side face, and the width of the first gap in the horizontal direction is enough that the convex part is not limited by the concave part when the convex part expands under heat.
Preferably, the width of the first gap in the horizontal direction is greater than 3 mm.
Preferably, the concave part and the convex part are closed ring bodies; or,
the concave part is composed of a plurality of arc-shaped sub concave parts, and the plurality of sub concave parts are distributed at intervals along the circumferential direction of the insulating ring; the convex part is composed of a plurality of arc-shaped sub-convex parts, the number of the sub-convex parts corresponds to that of the sub-concave parts, and the sub-convex parts are located in the sub-concave parts in a one-to-one correspondence mode.
Preferably, an annular extension part is further arranged on the supported surface of the Faraday shield ring, and the annular extension part vertically extends downwards into the ring hole of the insulating ring; and a second gap is arranged between the outer peripheral surface of the annular extension part and the inner annular surface of the insulating ring, and the width of the second gap in the horizontal direction is enough to ensure that the annular extension part is not limited by the insulating ring when the annular extension part expands under heat.
Preferably, the width of the second gap in the horizontal direction is greater than 3 mm.
As another technical solution, the present invention further provides a semiconductor processing apparatus, comprising a reaction chamber, a radio frequency coil and a radio frequency power supply, wherein a chamber wall of the reaction chamber is made of an insulating material; the radio frequency coil is arranged on the outer side of the wall of the chamber of the reaction chamber and is electrically connected with the radio frequency power supply; the radio frequency power supply is used for transmitting radio frequency power to the radio frequency coil, and is characterized in that the reaction chamber adopts the reaction chamber provided by the invention, and the Faraday shielding ring is arranged on the inner side of the chamber wall of the reaction chamber; and a base used for bearing the processed workpiece is arranged in the reaction chamber.
Preferably, a first liner and a second liner are included, wherein,
the first lining is arranged around the inner side of the chamber wall of the reaction chamber, is positioned above the Faraday shielding ring and is used for shielding a gap between the upper end of the Faraday shielding ring and the chamber wall of the reaction chamber;
the second lining is arranged around the inner side of the chamber wall of the reaction chamber and is positioned below the insulating ring so as to shield a gap between the insulating ring and the pedestal.
Preferably, a shielding ring is further disposed on the second liner to shield a gap between the second liner and the base.
The invention has the following beneficial effects:
according to the reaction chamber provided by the invention, the concave part and the convex part are respectively arranged on the supporting surface of the insulating ring and the supported surface of the Faraday shielding ring, and the first side surface of the concave part facing to the outer direction is attached to the second side surface of the convex part facing to the inner direction, so that the insulating ring and the Faraday shielding ring can be centered, namely, the insulating ring and the Faraday shielding ring are coaxial, the accurate positioning of the Faraday shielding ring can be realized, and the process uniformity is ensured. Meanwhile, the concave part is arranged to ensure that the convex part is not limited by the concave part when being heated and expanded, so that the deformation of the Faraday shielding ring is not related to the insulating ring, the insulating ring is not damaged in a high-temperature state, and the process stability and the equipment reliability can be improved.
According to the semiconductor processing equipment provided by the invention, the insulating ring can be prevented from being damaged in a high-temperature state, and the accurate positioning of the Faraday shielding ring can be ensured, so that the process uniformity, the stability and the equipment reliability can be improved.
Drawings
FIG. 1 is a block diagram of a conventional semiconductor processing apparatus;
FIG. 2 is an enlarged view of region I of FIG. 1;
FIG. 3 is a cross-sectional view of a reaction chamber provided in accordance with an embodiment of the present invention;
FIG. 4 is an enlarged view of area II of FIG. 3;
FIG. 5 is a bottom view of the protrusion of the Faraday shield ring of FIG. 3;
FIG. 6 is a partial cross-sectional view of a reaction chamber provided in a variant embodiment of the present invention; and
fig. 7 is a cross-sectional view of a semiconductor processing apparatus according to an embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the reaction chamber and the semiconductor processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
Fig. 3 is a cross-sectional view of a reaction chamber provided in an embodiment of the present invention. Referring to fig. 3, a reaction chamber 1 includes a faraday shield ring 2 and an insulating ring 3. When the reaction chamber 1 is applied to a metal deposition process, a metal shield is easily formed on the inner wall of the chamber adopting an insulating medium, so that electromagnetic energy is shielded outside the chamber, and therefore, the faraday shield ring 2 is arranged on the inner side of the side wall of the reaction chamber 1 in a surrounding manner, and the radio frequency energy can be ensured to be smoothly coupled into the reaction chamber 1 through the radio frequency coil. The insulating ring 3 is used to support the faraday shield ring 2 and to float its potential. The insulating ring 3 may be made of an insulating material such as ceramic or quartz. In addition, in order to ensure process uniformity, the faraday shield ring 2 needs to be coaxially disposed with the sidewall of the reaction chamber 1, and since the insulating ring 3 is coaxially connected with the sidewall of the reaction chamber 1, the faraday shield ring 2 can be positioned by equivalently disposing the insulating ring 3 and the faraday shield ring 2 mounted thereon coaxially.
Specifically, the faraday shield ring 2 and the insulating ring 3 are connected in the following manner: as shown in fig. 4, an enlarged view of region II in fig. 3. A concave portion 32 is provided on the support surface 31 of the insulating ring 3, and a convex portion 22 is provided on the supported surface 21 of the faraday shield ring 2, the convex portion 22 being located in the concave portion 32. Wherein the concave portion 32 includes a first side 321 facing in an outward direction (i.e., the direction of the arrow shown in fig. 4), the convex portion 22 includes a second side 221 facing in an inward direction (i.e., the direction opposite to the arrow shown in fig. 4), and the first side 321 and the second side 221 are attached. When the faraday shield ring 2 is installed on the insulating ring 3, the close fit between the first side 321 and the second side 221 can realize the centering of the insulating ring 3 and the faraday shield ring 2, i.e. the two are coaxial, thereby realizing the accurate positioning of the faraday shield ring 2 and ensuring the process uniformity.
The concave portion 32 is provided so that the convex portion 22 is not restricted by the concave portion 32 when thermally expanded. In the present embodiment, the recess 32 is a step formed at the edge of the supporting surface 31 of the insulating ring 3, that is, the recess 32 penetrates the insulating ring 3 in an outward direction, so that the protrusion 22 of the faraday shield ring 2 is not restricted by the recess 32 in the outward direction.
Because the Faraday shielding ring 2 is a closed cylindrical structure, the Faraday shielding ring can uniformly expand outwards along the diameter direction after being heated in a stable process, and because the Faraday shielding ring 2 is made of a good conductor and has a thermal expansion coefficient larger than that of an insulating material such as ceramic or quartz, and the expansion amount of the Faraday shielding ring 2 along the diameter direction is larger than that of the insulating ring 3 along the diameter direction, the deformation of the Faraday shielding ring 2 cannot be related to the insulating ring 3, when the diameter size of the Faraday shielding ring 2 does not change any more, a stable process environment is formed, and the Faraday shielding ring 2 and the insulating ring 3 can still keep coaxial, so that the uniformity and consistency of the process are ensured.
While the new target is cleaned to remove oxides and contaminants from its surface, although the faraday shield ring 2 accumulates a large amount of heat, the temperature rises greatly, but since the protrusions 22 pulling the second shield ring 2 are not restricted by the recesses 32 in the outward direction, it can still expand freely and uniformly outward without being associated with the insulating ring 3, pulling the second shielding ring 2 to contract when the temperature drops, the first side 321 and the second side 221 re-attach, thereby restoring the state of the normal process stability stage, and therefore, by not limiting the protrusion 22 of the faraday shield ring 2 in the outward direction by the recess 32, the deformation of the faraday shield ring 2 is not associated with the insulating ring 3 regardless of the process at any stage, therefore, the insulating ring 3 can be prevented from being damaged at a high temperature, and the process stability and the equipment reliability are improved.
In practical application, the concave part and the convex part can be closed ring bodies; alternatively, the concave portion and the convex portion may be formed in a split structure including a plurality of split bodies. Specifically, as shown in fig. 5, the convex portion 22 of the faraday shield ring 2 is composed of a plurality of arc-shaped sub-convex portions 20, and correspondingly, the concave portion 32 of the insulating ring 3 is composed of a plurality of arc-shaped sub-concave portions having a shape conforming to the shape of the sub-convex portions 20. And, a plurality of sub recesses are distributed at intervals along the circumferential direction of the insulating ring 3, the number of the sub protrusions 20 corresponds to the number of the sub recesses, and the respective sub protrusions 20 are located in the sub recesses in a one-to-one correspondence.
Fig. 6 is a partial sectional view of a reaction chamber provided as a modified example of the present embodiment. Referring to fig. 6, the reaction chamber provided in this variation is different from the above embodiment only in that: the recess 32' has a different structure.
Specifically, in the present modified embodiment, the concave portion 32' further includes a third side 322 facing in the inward direction (the direction opposite to the arrow shown in fig. 6), and the convex portion 22 includes a fourth side 222 facing in the outward direction (the arrow shown in fig. 6); the third side 322 is opposite to the fourth side 222 with a first gap B2 therebetween, and the width of the first gap B2 in the horizontal direction is such that the protrusion 22 is not restricted by the recess 32' when thermally expanded. That is, the faraday shield ring 2 can freely and uniformly expand outward, and in the process, the third side 322 and the fourth side 222 are not in contact with each other all the time, so that the thermal expansion of the faraday shield ring 2 is not related to the insulation ring 3.
Preferably, the width of the first gap B2 in the horizontal direction is greater than 3 mm. When a new target material is cleaned to remove oxides and contaminants on the surface thereof, the temperature of the faraday shield ring 2 is greatly increased (over 300 ℃) due to continuous bombardment, and the diameter expansion amount of the faraday shield ring 2 is about 3mm, so that the third side 322 and the fourth side 222 are always kept not in contact by making the width of the first gap B2 in the horizontal direction greater than 3 mm.
Preferably, an annular extension part 23 is further arranged on the supported surface 21 of the faraday shield ring 2, and the annular extension part 23 vertically extends downwards into the ring hole 33 of the insulating ring 3; a second gap B1 is provided between the outer circumferential surface 231 of the annular extension portion 23 and the inner circumferential surface 331 of the insulating ring 3, and the width of the second gap B1 in the horizontal direction is such that the annular extension portion 23 is not restricted by the insulating ring 3 when thermally expanded.
Preferably, the width of the second gap B1 in the horizontal direction is greater than 3mm to ensure that the outer circumferential surface 231 of the annular extension 23 and the inner circumferential surface 331 of the insulating ring 3 are not in contact at all times.
In summary, in the reaction chamber provided in the embodiments of the present invention, the concave portion and the convex portion are respectively disposed on the supporting surface of the insulating ring and the supported surface of the faraday shield ring, and the first side surface of the concave portion facing outward is attached to the second side surface of the convex portion facing inward, so that the insulating ring and the faraday shield ring can be centered, that is, coaxial with each other, and thus the faraday shield ring can be accurately positioned, and the process uniformity can be ensured. Meanwhile, the concave part is arranged to ensure that the convex part is not limited by the concave part when being heated and expanded, so that the deformation of the Faraday shielding ring is not related to the insulating ring, the insulating ring is not damaged in a high-temperature state, and the process stability and the equipment reliability can be improved.
As another technical solution, fig. 7 is a cross-sectional view of a semiconductor processing apparatus according to an embodiment of the present invention. Referring to fig. 7, the present invention further provides a semiconductor processing apparatus comprising a reaction chamber 200, an rf coil 203 and an rf power source 205, wherein a chamber wall 201 of the reaction chamber 200 is made of an insulating material such as quartz or ceramic. The rf coil 203 is disposed around the chamber wall 201 of the reaction chamber 200 and electrically connected to the rf power source 205 through the matching unit 204. The radio frequency power supply is used to deliver radio frequency power to the radio frequency coil 203. The reaction chamber 200 is the reaction chamber provided in the embodiment of the present invention.
The faraday shield ring 207 is disposed inside the chamber wall 201 of the reaction chamber 200 to ensure that rf energy is smoothly coupled into the reaction chamber 200 through the rf coil 203. A susceptor 212 for supporting a workpiece 213 to be processed is provided in the reaction chamber 200; at the top of the reaction chamber 200, and above the pedestal 212, a target 202 is disposed, which is electrically connected to a dc power source 206 for forming a plasma within the reaction chamber 200.
Preferably, the semiconductor processing apparatus further comprises a first liner 208 and a second liner 209, wherein the first liner 208 is disposed around the inner side of the chamber wall 201 of the reaction chamber 200 and above the faraday shield ring 207 for shielding a gap between the upper end of the faraday shield ring 207 and the chamber wall 201 of the reaction chamber 200. The second liner 209 is disposed around the chamber wall 201 of the reaction chamber 200 and below the insulating ring 211 to block a gap between the insulating ring 211 and the susceptor 212. By the first and second liners 208 and 209, the chamber wall 201 of the reaction chamber 200 may be protected, and the inside of the reaction chamber 200 may be kept clean, so that the chamber maintenance time may be extended.
It is further preferable that a shielding ring 210 is further disposed on the second liner 209 to shield a gap between the second liner 209 and the susceptor 212, so that the plasma can be prevented from being diffused to the bottom of the reaction chamber 200.
According to the semiconductor processing equipment provided by the embodiment of the invention, the reaction chamber provided by the embodiment of the invention can not only ensure that the insulating ring is not damaged in a high-temperature state, but also ensure that the Faraday shielding ring is accurately positioned, so that the process uniformity, the stability and the equipment reliability can be improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A reaction chamber comprising a Faraday shield ring and an insulating ring for supporting the Faraday shield ring, characterized in that a recess is provided at a supporting surface of the insulating ring and a protrusion is provided at a supported surface of the Faraday shield ring, the protrusion being located within the recess, wherein,
the concave part comprises a first side surface facing outwards, the convex part comprises a second side surface facing inwards, and the first side surface is attached to the second side surface;
the concave portion is provided so that the convex portion is not restricted by the concave portion when thermally expanded.
2. The reaction chamber of claim 1, wherein the recess is a step formed at an edge of the support surface of the insulating ring.
3. The reaction chamber of claim 1, wherein the recessed portion further comprises a third side facing in an inward direction, and the raised portion comprises a fourth side facing in an outward direction; and,
the third side face is opposite to the fourth side face, and a first gap is arranged between the third side face and the fourth side face, and the width of the first gap in the horizontal direction is enough that the convex part is not limited by the concave part when the convex part expands under heat.
4. A reaction chamber as claimed in claim 3 wherein the first gap is greater than 3mm wide in the horizontal direction.
5. The reaction chamber of any of claims 1-4 wherein the recess and the protrusion are each closed rings; or,
the concave part is composed of a plurality of arc-shaped sub concave parts, and the plurality of sub concave parts are distributed at intervals along the circumferential direction of the insulating ring; the convex part is composed of a plurality of arc-shaped sub-convex parts, the number of the sub-convex parts corresponds to that of the sub-concave parts, and the sub-convex parts are located in the sub-concave parts in a one-to-one correspondence mode.
6. The reaction chamber as claimed in any one of claims 1 to 4, wherein an annular extension is further provided on the supported surface of the Faraday shield ring, the annular extension extending vertically downward into the annular hole of the insulating ring; and a second gap is arranged between the outer peripheral surface of the annular extension part and the inner annular surface of the insulating ring, and the width of the second gap in the horizontal direction is enough to ensure that the annular extension part is not limited by the insulating ring when the annular extension part expands under heat.
7. The reaction chamber of claim 6 wherein the width of the second gap in the horizontal direction is greater than 3 mm.
8. The semiconductor processing equipment comprises a reaction chamber, a radio frequency coil and a radio frequency power supply, wherein the chamber wall of the reaction chamber is made of an insulating material; the radio frequency coil is arranged on the outer side of the wall of the chamber of the reaction chamber and is electrically connected with the radio frequency power supply; the radio frequency power supply is used for transmitting radio frequency power to the radio frequency coil, and the reaction chamber is the reaction chamber of any one of claims 1 to 7, and the Faraday shield ring is arranged on the inner side of the chamber wall of the reaction chamber; and a base used for bearing the processed workpiece is arranged in the reaction chamber.
9. The semiconductor processing apparatus of claim 8, further comprising a first liner and a second liner, wherein,
the first lining is arranged around the inner side of the chamber wall of the reaction chamber, is positioned above the Faraday shielding ring and is used for shielding a gap between the upper end of the Faraday shielding ring and the chamber wall of the reaction chamber;
the second lining is arranged around the inner side of the chamber wall of the reaction chamber and is positioned below the insulating ring so as to shield a gap between the insulating ring and the pedestal.
10. The semiconductor processing apparatus of claim 9, wherein a shield ring is further disposed on the second liner to shield a gap between the second liner and the susceptor.
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| CN201710131861.7A CN108573845B (en) | 2017-03-07 | 2017-03-07 | Reaction chamber and semiconductor processing equipment |
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| CN201710131861.7A CN108573845B (en) | 2017-03-07 | 2017-03-07 | Reaction chamber and semiconductor processing equipment |
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| CN108573845B true CN108573845B (en) | 2020-02-14 |
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| CN110396663B (en) * | 2018-04-24 | 2020-11-10 | 北京北方华创微电子装备有限公司 | Faraday shield barrel, annular piece, chamber assembly and re-sputtering chamber |
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| JPH10102234A (en) * | 1996-09-26 | 1998-04-21 | Canon Inc | Sputtering device and formation of coating using this device |
| CN102714146A (en) * | 2009-12-31 | 2012-10-03 | 应用材料公司 | Shadow ring for modifying wafer edge and bevel deposition |
| CN104746043A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma processing equipment |
| CN105097401A (en) * | 2014-05-13 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing equipment |
| CN105762052A (en) * | 2015-01-06 | 2016-07-13 | 东京毅力科创株式会社 | Shielding ring and substrate carrying bench |
| CN105779932A (en) * | 2014-12-26 | 2016-07-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process liner used for treatment cavity and physical vapor deposition equipment |
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| US7182816B2 (en) * | 2003-08-18 | 2007-02-27 | Tokyo Electron Limited | Particulate reduction using temperature-controlled chamber shield |
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| JPH10102234A (en) * | 1996-09-26 | 1998-04-21 | Canon Inc | Sputtering device and formation of coating using this device |
| CN102714146A (en) * | 2009-12-31 | 2012-10-03 | 应用材料公司 | Shadow ring for modifying wafer edge and bevel deposition |
| CN104746043A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma processing equipment |
| CN105097401A (en) * | 2014-05-13 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing equipment |
| CN105779932A (en) * | 2014-12-26 | 2016-07-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process liner used for treatment cavity and physical vapor deposition equipment |
| CN105762052A (en) * | 2015-01-06 | 2016-07-13 | 东京毅力科创株式会社 | Shielding ring and substrate carrying bench |
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| CN108573845A (en) | 2018-09-25 |
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