JPH04365859A - Sputtering device - Google Patents

Abstract

PURPOSE:To provide the sputtering device which has the characteristic to allow the formation of films at a low temp. and high speed and can prolong the maintenance period of the device. CONSTITUTION:A heating means (a heater wire 14) for heating a shielding plate 13 which limits the discharge region on a sputtering target 9 is provided. The adhesive power of the film sticking to the shielding plate 13 is increased in this way and, therefore, the generation of the pinholes and abnormal discharge of the film occurring in the cracking and peeling of the films sticking to the plate is prevented. The maintenance period is thereby prolonged and the productivity of the thin film formation is improved.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus capable of forming films at low temperatures and at high speeds.

0002

2. Description of the Related Art In recent years, sputtering equipment has become an indispensable equipment in the semiconductor industry, and its development trend is active.

An example of the above-mentioned conventional sputtering apparatus will be described below with reference to the drawings.

FIG. 3 shows a schematic diagram of a sputtering apparatus. The vacuum chamber 1 is equipped with a vacuum exhaust system 2, a gas introduction system 3, a substrate holder 5 for fixing a substrate 4, and the like. The cathode section provided within the vacuum chamber 1 is constructed as follows. The vacuum chamber 1 and the cathode holder 6 are electrically insulated by an insulator 7, and a backing plate 9 to which a sputtering target 8 is bonded is installed on the cathode holder 6. A cooling system 10 for cooling the sputtering target 8, backing plate 9, etc. is also installed. Power necessary for sputtering is supplied from a power supply system 11. A shield plate 12 is installed in the vacuum chamber 1 to limit the discharge area on the sputtering target 8.
is installed.

The operation of the sputtering apparatus constructed as described above will be explained below. first,
A sputtering gas containing an inert gas such as argon as a main component is introduced from the gas introduction system 3 into the vacuum chamber 1 at a predetermined flow rate, and the degree of vacuum within the vacuum chamber 1 is set to a predetermined value by the evacuation system 2. Ru. When a voltage is applied from the power supply system 11 in this state, plasma is generated. The ionized ions in this plasma then reach the sputtering target 8.
As a result of the collision, the sputtered particles are scattered from the sputtering target 8 and deposited on the substrate 4, forming a thin film.

[0006]

[Problems to be Solved by the Invention] However, the above configuration has the following problems. During film formation, sputter particles scattered from the sputtering target 8 not only adhere to the substrate 4 but also onto the shield plate 12 and the vacuum chamber 1, so if the film is formed for a long time, the film may become thick. is deposited.

When discharging is not performed due to replacement of the substrate 4, etc., the shielding due to radiation from the sputtering target 8, etc.
Although the temperature of the shield plate 12 does not rise, if film formation is performed for a long time, the temperature of the shield plate 12 reaches about 80 to 100° C. due to radiation from the sputtering target 8 and the like. Therefore, the shield plate 12 and the film attached to the surface of the shield plate 12 expand. Since the shield plate 12 and the film attached to the surface of the shield plate 12 have different coefficients of expansion, the film with weak adhesive strength cracks and peels off from the shield plate 12.

The peeled film floats in the vacuum chamber 1,
It adheres to the substrate 4 and causes pinholes. Also, sea
A cracked film on the surface of the lead plate 12 causes abnormal discharge that makes the discharge unstable.

[0009] For this reason, it is necessary to frequently interrupt film formation and peel off the film adhering to the surface of the shield plate 12, resulting in a problem that the maintenance cycle of the apparatus is short and productivity is poor.

In view of the above-mentioned problems, the present invention provides a sputtering apparatus that lengthens the maintenance period of the apparatus and improves the productivity of thin film formation by making it difficult for the film attached to the shield plate to peel off.

[0011]

[Means for Solving the Problems] In order to solve the above problems, the sputtering apparatus of the present invention is provided with a heating means for heating a shield plate that limits the discharge area of a sputtering target. .

0012

[Operation] According to the above means, it is possible to control and increase the temperature of the shield plate. The adhesion force of the film is largely influenced by the temperature of the substrate to be sputtered during film formation, and exhibits a rapid increase particularly from 175°C to around 200°C. Therefore, by heating the shield plate appropriately,
The adhesion strength of the film attached to the shield plate can be increased, and the film attached to the shield plate is less likely to crack even if it receives radiation from the sputtering target, thus solving the conventional problem.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a schematic diagram of an embodiment of the sputtering apparatus of the present invention. It should be noted that the same components as those of the conventional example explained in FIG. 3 are given the same numbers and the explanation will be omitted. A heater wire 14 and a thermocouple 15 are installed inside the shield plate 13. Electric power is supplied to the heater wire 14, and the temperature of the shield plate 13 is determined based on the signal from the thermocouple 15. A heater wire power source and a control device 16 for controlling the heater wire are connected.

When forming a film using the Al target 17, the temperature of the shield plate 13 is controlled to about 200° C. using a thermocouple 15 and a heater wire power supply and control device 16. As a result, the adhesion strength of the film adhered to the shield plate 13 is more than 10 times the strength of the film adhered when the shield plate 13 is formed without heating, as shown in the results shown in FIG.

Therefore, even if film formation is performed continuously, the film attached to the shield plate 13 is difficult to crack and peel off. Therefore, the maintenance cycle of the apparatus can be lengthened, and the productivity of thin film formation can be improved.

In this embodiment, the heater wire 14 is provided inside the shield plate 13 in order to heat the shield plate 13, but the heater wire 14 is not connected to the outside of the shield plate 13. It may be provided.

In this embodiment, the shield plate 13 is heated by the heater wire 14, but as shown in FIG. 2, a lamp 19 is provided inside the shield plate 18, and a thermocouple 15 The shield plate 18 may be heated by installing the power source and the control device 20, and is not limited to this embodiment.

[0019]

[Effects of the Invention] According to the sputtering apparatus of the present invention,
Since the maintenance cycle can be lengthened, thin films can be manufactured with extremely high productivity, which is highly effective in reducing costs.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of essential parts showing the configuration of an embodiment of a sputtering apparatus of the present invention.

FIG. 2 is a cross-sectional view of main parts showing the configuration of another embodiment of the sputtering apparatus of the present invention.

[Fig. 3] Cross-sectional view of main parts showing the configuration of a conventional sputtering device

[Figure 4] Relationship diagram between substrate temperature and relative strength of adhesion force

[Explanation of symbols]

1 Vacuum chamber 2 Vacuum exhaust system 3 Gas introduction system 4 Substrate 5 Substrate holder 6 Cathode holder 7 Insulator 8 Sputtering target 9 Backing plate 10 Cooling system 11 Power supply system 12 Shield plate 13 Shield Plate 14 Heater wire (heating means) 15 Thermocouple 16 Heater wire power supply and control device 17 Al target 18 Shield plate 19 Lamp 20 Lamp power supply and control device

Claims (1)

[Claims] Claim 1: A sputtering tar is installed in the vacuum chamber.
A sputtering apparatus comprising: a backing plate to which a target is attached; a shield plate for limiting a discharge area on the sputtering target; and means for heating the shield plate.