JP2006336085A - Sputtering system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputtering system capable of stabilizing crystal grains by repeating film deposition and annealing, and simultaneously depositing a plurality of films by a configuration having a turntable capable of setting a plurality of wafers. <P>SOLUTION: The sputtering system comprises the turntable 3 capable of placing the plurality of wafers 5 inside a vacuum tank 1 composed of a vacuum chamber 6a and a vacuum base 6b, heaters 2 of the same number as that of the wafers 5 placed on the turntable 3, a plurality of targets 12, an inner deposition preventive plate 8 to surround the targets 12 on the circumference, and an outer deposition preventive plate 9 to surround its outer circumference. The film deposition by the sputtering and the anneal are repeated for each wafer 5 by turning the turntable 3 by the predetermined angle, and the plurality of wafers can be simultaneously treated. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a sputtering apparatus capable of performing stable and highly accurate film formation when forming various insulators, in particular, an insulator such as an oxide.

  A conventional sputtering apparatus of this type will be described with reference to FIG. The vacuum chamber 51 constituting the vacuum chamber is provided with an exhaust port 58. The vacuum chamber 51 can be evacuated through the exhaust port 58, and the gas supply port 57 is provided in the vacuum chamber 51. The gas introduction port 57 can introduce a necessary and predetermined gas.

  A backing plate 52 is disposed in the vacuum chamber 51 in a state insulated from the vacuum chamber 51, and a ground shield is provided on the side surface of the backing plate 52 facing the inside of the vacuum chamber 51 so as to face the surface of the target 53. The adhesion prevention board 56 which is is arrange | positioned.

  A counter electrode 61 is disposed at a predetermined position around the mounting table 55 on the inner bottom surface of the vacuum chamber 51, and a deposition plate 59 is provided in the vicinity of the inner side surface of the vacuum chamber 51.

  The top surface of the deposition plate 59 is fixed to the upper side surface inside the vacuum chamber 51, and the bottom surface of the deposition plate 59 is positioned near the surface of the counter electrode 61. It is arranged so as to be close to the side surface and parallel to the inner side surface.

  A high frequency power source 54 is provided outside the vacuum chamber 51, and this high frequency power source 54 is electrically connected to a backing plate 52. When the high frequency power source 54 is activated, high frequency power is supplied to the target 53 via the backing plate 52. It can be supplied.

  In order to form a film with the sputtering apparatus having the above-described configuration, first, the inside of the vacuum chamber 51 is evacuated, the wafer 60 is carried into the vacuum chamber 51 while maintaining the vacuum state, and a predetermined position on the surface of the mounting table 55 is obtained. Placed on.

  Next, argon gas and oxygen gas are respectively introduced into the vacuum chamber 51 from the gas introduction port 57 as sputtering gases, and the internal pressure is adjusted and set to a predetermined pressure. When the high frequency power supply 54 is activated and high frequency power is supplied in this state, a discharge is generated inside the vacuum chamber 51, and the target 53 is sputtered by the discharge.

  The sputtered target 53 flies in the direction of the surface of the wafer 60 disposed immediately below the target 53, and a thin film of the target 53 is formed on the wafer 60.

  When a thin film having a predetermined thickness is formed on the surface of the wafer 60, the supply of high-frequency power by the high-frequency power source 54 is stopped, the introduction of argon gas and oxygen gas as sputtering gases is stopped, and the sputtering process is terminated. While maintaining the vacuum state inside the vacuum chamber 51, the wafer 60, which has been processed, is taken out of the vacuum chamber 51.

  Subsequently, a new wafer 60 is carried into the vacuum chamber 51 while maintaining the vacuum state inside the vacuum chamber 51, and the same operation as the film forming process described above is performed. By repeating this film forming process, the target material can be continuously formed with a predetermined film thickness on the wafer 60 which is a plurality of objects to be sputtered.

As prior art document information relating to this application, for example, Patent Document 1 is known.
JP 2002-38263 A

  However, the conventional sputtering apparatus has a configuration in which a single wafer is set in a single vacuum chamber and the wafer is heated while forming a film, and crystal grains are stabilized by repeated film formation and annealing. In addition to being able to process in a single vacuum chamber, there was a problem that only one sheet / batch could be processed.

  The present invention is intended to solve the above-mentioned problems, and has a structure having a turntable that can stabilize crystal grains by repeatedly performing film formation and annealing and can set a plurality of wafers. Thus, an object of the present invention is to provide a sputtering apparatus capable of simultaneously and stably depositing a plurality of wafers.

  In order to achieve the above object, the present invention has the following configuration.

  The invention according to the first aspect of the present invention particularly includes a vacuum chamber that can be set and maintained at a predetermined vacuum, a wafer holder in which a wafer to be deposited by sputtering in the vacuum chamber is placed, and the wafer A turntable capable of mounting a plurality of wafer holders that are sequentially moved to a cathode for film formation of the holder, a power source for applying high-frequency power to the target disposed opposite to the wafer holder via an electrode, and the wafer holder It consists of a heater that heats the wafer mounted on the substrate, and has a configuration in which film formation and annealing are sequentially repeated to form a film, and this allows film formation and annealing to be performed in the same vacuum chamber. It can be performed and has the effect of stabilizing the crystal grains in sputtering.

  The invention described in claim 2 of the present invention particularly has a turntable driven by a NC controllable motor, and the wafer placed on the turntable is intermittently fed, continuously rotated and stationary. It is a configuration that enables film formation, which enables positioning of the wafer at any location on the turntable, preheating time for the wafer to be applied before film formation, and annealing immediately after film formation It is possible to arbitrarily set and change the period of time, and the effect is that the stabilization of the crystal can be controlled.

  The invention according to claim 3 of the present invention has in particular two or more cathodes which are mounting bases and electrodes, and can arbitrarily set the time to set power in the applied high frequency power independently for each cathode. It has a configuration that can be set or changed, which makes it possible to apply instantaneously to a target such as a metal material to which a predetermined high-frequency power can be applied instantaneously, and if it is applied instantaneously, the target may be damaged and damaged. In certain insulators, etc., it is possible to gradually apply up to a predetermined high frequency power over a predetermined time, so that an optimum slow-up time can be set for each target, which can improve productivity and prevent damage to the target Has an effect.

  The invention described in claim 4 of the present invention particularly has a configuration in which a plurality of cathodes for starting and stopping sequential discharges are provided, and thus placed on a wafer tray on a turntable. All the wafers that have been formed are formed in the same order, and there is an effect that variation between the wafers can be suppressed.

  In the invention according to claim 5 of the present invention, in particular, two or more circular deposition plates provided concentrically around the target are installed, and the height of the outer deposition plate is the height of the inner deposition plate. It has a structure that is 0.5 to 20 mm higher than this, so that the insulating film adheres to the inner protective plate, and the anode part necessary for discharge cannot be expected to function on the inner protective plate. However, there is an effect that stable discharge can be maintained by the outer deposition plate which is exposed to plasma and has no insulating film attached thereto.

  The invention described in claim 6 of the present invention is particularly configured to have a turntable and a wafer holder capable of bringing the wafer into a floating state, whereby an insulator is formed on the turntable, the wafer tray and the wafer. What was previously conductive has an effect of suppressing the change in crystallinity of the formed film as a result of changing the film formation state by becoming an insulator as the film is formed.

  In the invention according to claim 7 of the present invention, in particular, a heater is disposed on the opposite side of the electrode with the wafer placed on the upper surface of the turntable, and moves with the wafer holder between the wafer and the heater. It has a configuration in which a plate made of a ceramic material for holding and uniforming the heat of the heater is provided freely, thereby improving the uniformity of the temperature distribution of the wafer and the next heater from directly below the heater. This has the effect of preventing the temperature of the wafer from lowering when it is moved.

  In the invention described in claim 8 of the present invention, in particular, two or more deposition-preventing plates are installed around the target, and the surface of the outer deposition-preventing plate is subjected to a surface treatment that increases conductivity and surface roughness, The surface area of the protective plate is made larger than the surface area of the other protective plates, which makes it possible to lower the negative bias potential of the target during film formation and stabilize the insulator film, etc. The effect is that the film can be formed with the composition.

  The invention according to claim 9 of the present invention has a configuration in which, in particular, the surface of the adhesion preventing plate is subjected to dimple processing, and the surface area of the outer adhesion preventing plate is made larger than the surface area of the other adhesion preventing plates, As a result, the outer surface area can be increased even with the same outer shape of the deposition plate, the potential of the negative bias of the target can be lowered at the time of film formation, and deposition of a stable composition such as an insulator film can be performed. Has the effect of being able to.

  In the invention according to claim 10 of the present invention, in particular, a structure in which a plurality of holes having a diameter equal to or larger than the sheath thickness and within 20 mm and having a depth of less than twice the diameter is processed and provided on the outer adhesion-preventing plate. As a result, the surface area of the outer deposition preventing plate can be increased, the potential of the negative bias of the target can be lowered during the film formation, and a film having a stable composition such as an insulator film can be formed. Has the effect of being able to.

  The invention according to the eleventh aspect of the present invention particularly has a configuration in which a conductive material is sprayed on the surface of the deposition preventing plate so that the surface area of the outer deposition preventing plate is larger than the surface areas of the other deposition preventing plates. As a result, the surface area of the outer adhesion-preventing plate can be increased, the potential of the negative bias of the target can be lowered during film formation, and the film can be formed with a stable composition such as an insulator film. Has an effect.

  The invention according to the twelfth aspect of the present invention particularly has a configuration in which a gas necessary for sputtering is jetted directly above a target via a gas flow path in an earth shield. Gas can be efficiently introduced into the discharge space surrounded by the deposition prevention plate, and the plasma can be stabilized and the film formation state can be stabilized in the space where the target and the wafer are exposed. Has the effect of being able to

  The invention described in claim 13 of the present invention has a configuration in which a film during pre-sputtering is formed on at least one of the wafers placed on the upper surface of the turntable. Thus, during application of high-frequency power to the target or during pre-sputtering, a film is always formed on the wafer that is determined and set, and one impure film generated at the initial stage of film formation is deposited on the wafer, Other wafers have the effect of being able to perform predetermined film formation in a stable state at all times.

  The invention according to claim 14 of the present invention has a configuration in which the film formation during the pre-sputtering is formed on a dummy wafer holder on the upper surface of the turntable, and thereby high frequency power is applied to the target. During application or pre-sputtering, a film is always deposited on a predetermined dummy wafer tray. Impure films generated at the initial stage of film deposition are deposited on the dummy tray, and other wafers are always in a stable state. Thus, there is an effect that a predetermined film can be formed.

  The invention according to claim 15 of the present invention has a configuration in which a plate having a gap smaller than the sheath distance is provided so as to surround the target, particularly on the surface and side surface of the target. In addition, it is possible to suppress the discharge on the side of the target that occurs during application of high-frequency power to the target, and it has the effect of preventing damage to the target and damage to the target due to abnormal discharge that occurs on the target side.

  The sputtering apparatus of the present invention supplies high-frequency power to a vacuum chamber, two or more wafer holders, a turntable that moves the wafer holders sequentially to a cathode for film formation, and an electrode disposed opposite the wafer holder The high-frequency power supply and the heater for heating the wafer are capable of repeating the film formation for forming a predetermined film and the annealing for growing the crystallinity of the formed film, and stable high accuracy by sputtering. This film has the effect of forming a film.

(Embodiment 1)
Hereinafter, the invention described in the first, second, fifth, seventh, twelfth and fifteenth aspects of the present invention will be described using the first embodiment with reference to the drawings.

  FIG. 1 is a schematic diagram of a main part configuration of a sputtering apparatus according to Embodiment 1 of the present invention, FIG. 2 is a schematic plan view of a turntable of the apparatus, FIG. 3 is a schematic diagram of a main part configuration of a discharge space of the apparatus, and FIG. 4 is a schematic diagram of a main part configuration of the deposition preventing plate of the apparatus.

  In the sputtering apparatus according to the first embodiment, a vacuum chamber 1 is constituted by a vacuum chamber 6 a having an airtight structure and a vacuum base 6 b as a base, and a vacuum exhaust pipe 18 is disposed at the bottom of the vacuum chamber 1. The vacuum exhaust pipe 18 is connected to a vacuum exhaust valve 15 and a vacuum exhaust system (not shown). The vacuum exhaust system is driven and the vacuum exhaust valve 15 is opened to open the inside of the vacuum chamber. It is evacuated to a predetermined vacuum atmosphere.

  A gas introduction pipe 7 is connected to the vacuum chamber 1, and is separated from a gas introduction system (not shown) by a gas introduction valve 17. By opening the gas introduction valve 17, the inside of the vacuum chamber is opened. It is possible to introduce a predetermined gas into.

  The degree of vacuum of the vacuum chamber 1 is adjusted by the gas introduction valve 17 while the vacuum level is lowered by the sputtering gas supplied into the vacuum chamber by an amount set by a mass flow meter (not shown), whereas the vacuum level is reduced. This is performed by adjusting the opening degree of the valve 15, and the degree of vacuum can be set to a desired value (for example, an arbitrary value of 0.1 Pa to 0.5 Pa).

  A mounting base and a cathode 16 as an electrode are disposed and fixed on the vacuum base 6b. A backing plate 11 serving as an electrode is mounted and fixed on the cathode 16 while being insulated from the vacuum base 6b. A target 12 made of an insulator made of a material to be deposited is disposed on the upper surface, that is, the side facing the vacuum chamber 6 a, and a target presser 23 is disposed around the target 12.

  Further, a ground ring 10 having the same potential as that of the vacuum chamber 6a is disposed around the target 12, and the ground ring 10 is concentric with the target 12 as shown in FIGS. A plate 8 and an outer plate 9 0.5 mm to 20 mm taller than the inner plate 8 are arranged at the same potential as the vacuum chamber 6a, and these are used as a ground in the sputtering. It is configured to play a role.

  In the vacuum chamber 1, a wafer holder 4 on which a wafer 5 made of a silicon base material, an MgO substrate, or the like is placed is opposed to the target 12, and the wafer holder 4 is insulated from the vacuum chamber 6 a. It is placed on the upper surface of the turntable 3.

  The turntable 3 can freely perform continuous rotation, intermittent rotation, or predetermined positioning by driving a shaft 19 whose central portion is fixed at one end by an NC-controlled motor 13.

  With the configuration and operation described above, the wafer 5 can be moved to a position facing a plurality of arbitrary targets 12 in the vacuum chamber 1 and can be positioned at a predetermined position.

  Further, a heater 2 is disposed immediately above the wafer 5 at a position facing the target 12 so that the wafer 5 can be heated during film formation or just before film formation.

  A high frequency power supply 14 is electrically connected to the backing plate 11 inside the vacuum chamber 1, and when the high frequency power supply 14 is activated, high frequency power can be supplied to the target 12 via the backing plate 11. .

  The soaking plate 21 is disposed between the heater 2 and the wafer 5 and is used to uniformly heat the entire wafer 5 and is made of a ceramic material or the like. The gas supply hole 22 is connected to the tip of the gas introduction pipe 7 and supplies a predetermined sputtering gas into the vacuum chamber 1, and constitutes a gas flow path in the earth shield including the introduction pipe 7. Sputtering gas is jetted directly above the target 12 via the gas flow path.

  FIG. 2 shows a film forming position 24 where a film is generated (position) and an annealing position 25 which is also a position (position) where annealing is performed.

  A film forming method on the surface of the wafer 5 in the sputtering apparatus having the above configuration will be described with reference to the drawings.

  The inside of the vacuum chamber 1 is evacuated by opening the evacuation valve 15 and driving the evacuation system, and the wafer 5 made of a silicon base material, an MgO substrate or the like in advance while maintaining the vacuum state, and the wafer 5 The wafer holder 4 on which the soaking plate 21 is disposed immediately above is placed at a predetermined position of the turntable 3 inside the vacuum chamber 1.

  This is performed at all positions on the turntable 3, and the wafer holder 4 on which the wafer 5 and the heat equalizing plate 21 are disposed is set at all mounting positions on the upper surface of the turntable 3.

  In such a state, for example, the power of the heater 2 under PID control is turned on to heat the wafer 5 so that the wafer 5 reaches a set temperature. At this time, the turntable 3 is required to perform continuous rotation or intermittent rotation, or The stationary state can be arbitrarily set and determined by the NC control motor 13, for example.

  Next, when the wafer 5 reaches a set temperature, the gas introduction valve 17 is opened to pass through the gas introduction pipe 7 and directly above the target 12 in the vacuum chamber 1 from the gas supply hole 22 shown in FIG. Sputtering gas, that is, argon gas and oxygen gas, are respectively supplied in set amounts, and the opening degree of the exhaust valve 15 is adjusted so that the pressure in the vacuum chamber 1 becomes a set value of 0.1 Pa to 0.5 Pa.

  When the pressure inside the vacuum chamber 1 becomes a set value, when the high frequency power source 14 is activated and high frequency power is supplied to the target 12 via the backing plate 11, plasma is generated inside the vacuum chamber 1 and the target 12 is sputtered. Become.

  Further, due to the action and effect of the target presser 23, plasma is generated only on the side of the target 12 facing the vacuum chamber 6a and does not occur on the side surface of the target 12. Therefore, the target 12 is caused by abnormal discharge generated on the side surface. There is no damage.

  The insulating target material sputtered from the target 12 flies in the direction of the wafer 5 disposed immediately above the target 12, and the inner surface of the inner protective plate 8, the lower surface of the turntable protective plate 20, and the wafer holder 4. Will fly to the bottom of the.

  Furthermore, for the particles of the target material that wrap around from the inner protective plate 8, the target material is attached to the inner surface of the outer protective plate 9, so that the insulator film of the target material is attached to the other structural mechanisms and parts. Never do.

  Furthermore, even if the target material made of an insulator adheres to the inner protection plate 8 or the earth ring 10, the ground surface (anode) that normally causes sputtering is adhered to the back surface side of the inner protection plate 8 and the outer prevention coating. Since the target 12 is in the plasma space on the inner surface of the plate 9, the target 12 can maintain a negative bias potential, whereby only the target material can be deposited on the lower surface side of the wafer 5, that is, on the deposition surface. It is.

  As shown in FIG. 2, in order to promote crystal growth during film formation, an annealing position arranged between a plurality of film formation positions 24 when a predetermined film thickness is reached. The wafer 5 is moved to 25 and annealed for approximately the same time as the film formation time, so that the orientation and crystallinity of the film formed on the upper surface of the wafer 5 can be stabilized.

  At that time, when moving from the film forming position 24 to the annealing position 25, the wafer 5 may pass through a place without the heater 2 and the temperature of the wafer 5 may decrease. Since the heat from the wafer 5 is continuously applied even when the wafer 5 is moved, a large change in the temperature of the wafer 5 is prevented.

  Further, while the film of the wafer 5 formed first is annealed, the wafer 5a adjacent to the wafer 5 formed first is formed, and thus the wafer 5 is formed. That is, the number of wafers 5 that are twice as many as the number of wafers 5 is continuously formed at the film forming position.

  In this way, when the insulator film, which is the target material sputtered on the upper surface of the predetermined wafer 5, reaches the predetermined film thickness, the gas introduction valve 17 is closed, and the supply of argon gas and oxygen gas as the sputtering gas is performed. At the same time, the high-frequency power supply from the high-frequency power source 14 is stopped, the sputtering process is terminated, the vacuum exhaust valve 15 is fully opened, and the vacuum chamber 1 is maintained in a vacuum state, and the temperature can be taken out. Until the temperature of the wafer 5 is lowered, the turntable is continuously rotated, intermittently rotated, or stationary, and when the temperature reaches a temperature at which the wafer 5 can be taken out, the substrate of the wafer 5 that has been subjected to film formation is taken out from the vacuum chamber 1.

  Subsequently, while maintaining the inside of the vacuum chamber 1 composed of the vacuum chamber 6a and the vacuum base 6b, the wafer holder 4 on which the new wafer 5 is placed is transferred to the inside of the vacuum chamber 1, and the above-mentioned By performing the same film forming process as the operation or operation, film forming processes on the upper surfaces of a large number of wafers 5 can be performed continuously.

  If a plate having a gap smaller than the sheath distance is provided so as to surround the target 12 with respect to the surface and side surface of the target 12, the side surface of the target 12 generated when high frequency power is applied to the target 12. Discharge can be suppressed, and damage to the target 12 due to abnormal discharge occurring on the side surface of the target 12, damage to the target 12, and the like can be prevented.

(Embodiment 2)
The second embodiment of the present invention will be described below with reference to the drawings.

  FIG. 5 is a time-applied power diagram in the high-frequency power application of the sputtering apparatus according to Embodiment 2 of the present invention. The inside of the vacuum chamber 1 composed of the vacuum chamber 6a and the vacuum base 6b is evacuated to a vacuum state, a predetermined sputtering gas is introduced from the gas introduction valve 17 and the time and applied power are applied. As shown in FIG. 5, by gradually applying power over time as shown in FIG. 5, even when the target 12 made of an insulator or the like is damaged by a thermal shock, the high frequency is stably generated without causing a rapid temperature change. Electric power can be applied.

  Further, even when two or more different film forming materials are sputtered, by changing the time-applied power gradient as shown in FIG. 5 for each target material, Thus, it is possible to provide an application time for reaching the set value of the optimum high-frequency power.

  For example, when two targets are used, high frequency power is gradually applied to the power P (W) in t1 time for the first target, and t2 time for the other target. By applying high frequency power up to power P (W), film formation can be started in a time suitable for the target material.

(Embodiment 3)
Hereinafter, the invention described in the fourth, thirteenth and fourteenth aspects of the present invention will be described with reference to the drawings by using the third embodiment.

  FIG. 6 is a schematic plan view of a main part configuration of the turntable of the sputtering apparatus according to Embodiment 3 of the present invention, and FIG. 7 is a time-applied power chart in each application of high-frequency power when the apparatus has three targets. is there.

  The target generated in the initial stage of sputtering when the inside of the vacuum chamber 1 composed of the vacuum chamber 6a and the vacuum base 6b is evacuated to a vacuum state, a predetermined sputtering gas is introduced from the gas introduction valve 17 and high frequency power is applied. In order to prevent unnecessary and impure materials adhering to the surface of 12 from adhering to the wafer 5, the wafer 5a positioned and set by the turntable 3 is placed directly on the target 12a as shown in FIG. The case where it is placed will be described.

  When the wafer 5a is directly above the target 12a, the high frequency power applied to the target 12a is supplied so as to be set power P (W) in T time as shown in FIG. In this state, all unnecessary impurities on the surface of the target 12a can be sputtered and removed, and all the unnecessary impurities adhere to the adhesion plate (not shown) disposed around the wafer 5a and the target 12a. To do.

  When a predetermined T time has elapsed, the turntable 3 is rotated 60 degrees clockwise. As a result, the wafer 5a formed on the surface moves to a position (position) between the target 12a and the target 12b. In this state, the wafer 5a is annealed, while only the required pure target material is deposited by sputtering on the wafer 5b located immediately above the target 12a.

  When the predetermined T time elapses, the turntable rotates 60 degrees in the clockwise direction again, and the wafer 5a is positioned immediately above the target 12b. In this state, the high frequency power reaches the set power P (W) in T time in the target 12b. Apply as follows. At this stage, all unnecessary and impure materials on the surface of the target 12b are sputtered onto the wafer 5a, and adhere to the adhesion preventing plates (not shown) disposed around the wafer 5a and the target 12b. On the other hand, the wafer 5a is annealed, and the wafer 5c is formed by sputtering with the target 12a.

  When the turntable 3 is again rotated clockwise by 60 degrees from this state, the wafer 5a is annealed at an intermediate position (position) between the target 12b and the target 12c. The wafer 5b is formed by sputtering using the target 12b, the wafer 5c is annealed, and the wafer 5d is formed by sputtering using the target 12a.

  When a predetermined T time has elapsed in this state, when the turntable 3 is rotated 60 degrees in the clockwise direction again, the wafer 5a is positioned immediately above the target 12c. In this state, the high frequency power is set to the target 12c in T time. Apply to reach P (W). As a result, unnecessary impurities on the surface of the target 12c adhere to the adhesion preventing plates (not shown) disposed around the wafer 5a and the target 12c.

  Further, by rotating the turntable 60 degrees clockwise, the wafer 5a is annealed at an intermediate position (position) between the target 12a and the target 12c, the wafer 5b is the target 12c, the wafer 5d is the target 12b, The wafer 5f is formed by sputtering on the target 12a, and the wafer 5c and the wafer 5e are annealed.

  When a predetermined time T has elapsed, the wafer 5a returns to the position immediately above the target 12a, and thereafter, the wafer 5a is rotated a predetermined number of times in the clockwise direction by 60 degrees, and a target material having a predetermined thickness is applied to each of the wafers 5a to 5f. When the film is formed, the gas introduction valve 17 is closed and the supply of a predetermined sputtering gas is stopped. At the same time, the supply of high-frequency power is stopped and the sputtering process is terminated.

  As described above, by attaching unnecessary impurities attached to the surfaces of the targets 12a to 12c to the wafer 5a and the deposition preventing plate, a film can be formed on the wafers 5b to 5f by sputtering with a necessary and pure target material. It is possible to perform stable film formation with excellent characteristics.

  The same effect can be obtained by using a wafer holder 4 having no holes in place of the wafer 5a, and attaching unnecessary impurities attached to the target surface to the wafer holder 4.

(Embodiment 4)
Hereinafter, the invention described in claims 8 to 11 of the present invention will be described using the fourth embodiment with reference to the drawings. FIG. 8A is a schematic cross-sectional view of a main part configuration when dimple processing is performed on the outer protection plate in the embodiment of the present invention, and FIG. 8B is thermal sprayed on the inner surface of the outer protection plate. The principal part structure outline | summary sectional drawing in the case, FIG.8 (c) is a principal part structure outline | summary sectional view at the time of giving a hole process to the same outer protection board.

  By processing the dimple 26 on the outer protection plate 9 exposed to the plasma in the discharge space generated during sputtering, as shown in FIG. 8A, the area of the anode serving as the ground plane is increased. As a result, the negative bias voltage on the target surface can be lowered, and efficient and stable sputtering can be performed.

  Further, as shown in FIG. 8 (b), when the thermal spray 27 of the conductive material is performed on the inner surface of the outer cover plate 9 with an arithmetic average roughness of 0.01 mm or more, and as shown in FIG. 8 (c). Even when the outer protection plate 9 is drilled with a hole whose diameter is equal to or greater than the sheath thickness and within 20 mm, and the plurality of holes 28 whose depth is less than twice the hole diameter are provided, the outer protection plate 9 The area exposed to the plasma of the anode, that is, the area of the anode which is the ground plane can be increased, and the same effect as described above can be obtained.

  That is, two or more protective plates are installed around the target 12, and the surface of the outer protective plate 9 is subjected to a surface treatment that increases the conductivity and the surface roughness. The surface area of the deposition preventing plate 8 is made larger.

  The sputtering apparatus according to the present invention is capable of forming a film having good characteristics and stable, and has an effect that a plurality of sputtering processes can be performed at the same time to improve productivity. It is useful for applications such as film formation of an insulator film such as an oxide film.

Main part structure schematic diagram of sputtering apparatus in Embodiment 1 of this invention Outline plan view of the turntable of the device Outline diagram of main components of discharge space of the device Outline diagram of the main part of the protective plate of the equipment Time-applied power diagram in high-frequency power application of the sputtering apparatus in Embodiment 2 of the present invention Main part structure outline | summary top view of the turntable of the sputtering device in Embodiment 3 of this invention Time-applied power diagram for each high frequency power application when the apparatus has three targets Main part composition outline sectional view at the time of giving various processing to the outer cover adhesion board in Embodiment 4 of the present invention Overview of main components of conventional sputtering equipment

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Heater 3 Turntable 4 Wafer holder 5 Wafer 6a Vacuum chamber 6b Vacuum base 7 Gas introduction pipe 8 Inner deposition plate 9 Outer deposition plate 10 Earth ring 11 Backing plate 12 Target 13 Motor 14 High frequency power supply 15 Vacuum exhaust valve 16 Cathode 17 Gas introduction valve 18 Vacuum exhaust pipe 19 Axis 20 Turntable adherence plate 21 Heat equalizing plate 22 Gas supply hole 23 Target presser 24 Deposition position 25 Annealing position 26 Dimple 27 Spraying 28 Hole

Claims (15)

A vacuum chamber that can be set and maintained at a predetermined vacuum, a wafer holder in which a wafer to be deposited by sputtering is placed, and a plurality of wafer holders that are sequentially moved to the cathode for depositing the wafer holder A turntable, a power source that applies high-frequency power to the target disposed opposite to the wafer holder via an electrode, and a heater that heats the wafer placed on the wafer holder, A sputtering apparatus characterized in that sputtering for forming a film and annealing by heating are sequentially repeated. 2. A turntable driven by a NC-controllable motor, wherein a wafer placed on the turntable can be formed in an intermittent feed, continuous rotation, and stationary state. The sputtering apparatus as described. 2. The sputtering according to claim 1, further comprising two or more cathodes serving as a mounting base and electrodes, wherein the time to the set power in the applied high-frequency power can be arbitrarily set or changed for each cathode independently. apparatus. The sputtering apparatus according to claim 1, further comprising: a plurality of cathodes that start and stop sequential discharge. Two or more circular deposition plates concentrically provided around the target are installed, and the height of the outer deposition plate is 0.5 to 20 mm higher than the height of the inner deposition plate. Item 5. The sputtering apparatus according to any one of Items 1 to 4. The sputtering apparatus according to claim 1, wherein the sputtering apparatus includes a turntable and a wafer holder that can place the wafer in a floating state. A heater is disposed on the opposite side of the electrode between the wafers placed on the upper surface of the turntable, and is movable with the wafer holder between the wafers and the heaters for maintaining and uniformizing the heat of the heaters. 6. A sputtering apparatus according to claim 1, wherein a plate made of a ceramic material is provided. Two or more protective plates are installed around the target, the surface of the outer protective plate is subjected to surface treatment that increases conductivity and surface roughness, and the surface area of the outer protective plate is the surface area of other protective plates. The sputtering apparatus according to claim 1, wherein the sputtering apparatus is made larger. The sputtering apparatus according to claim 5 or 8, wherein the surface of the adhesion preventing plate is subjected to dimple processing so that the surface area of the outer adhesion preventing plate is larger than the surface area of the other adhesion preventing plate. 9. The sputtering apparatus according to claim 5, wherein a plurality of holes having a diameter equal to or greater than the sheath thickness and within 20 mm and having a depth less than twice the diameter are processed and provided in the outer deposition preventing plate. The sputtering apparatus according to claim 5 or 8, wherein a surface of the outer deposition preventing plate is made larger than a surface area of another deposition preventing plate by spraying a conductive material on the surface of the deposition preventing plate. The sputtering apparatus according to any one of claims 1 to 11, wherein a gas necessary for sputtering is jetted directly above a target via a gas flow path in an earth shield. The sputtering apparatus according to any one of claims 1 to 11, wherein a film during pre-sputtering is formed on at least one of the wafers placed on the upper surface of the turntable. 12. The sputtering apparatus according to claim 1, wherein the film formation during the pre-sputtering is formed on a dummy wafer holder on the upper surface of the turntable. The sputtering apparatus according to claim 1, wherein a plate having a gap smaller than a sheath distance is provided so as to surround the target with respect to a surface and a side surface of the target.

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