JPH0349310A - Surface acoustic wave device - Google Patents
Surface acoustic wave deviceInfo
- Publication number
- JPH0349310A JPH0349310A JP18564489A JP18564489A JPH0349310A JP H0349310 A JPH0349310 A JP H0349310A JP 18564489 A JP18564489 A JP 18564489A JP 18564489 A JP18564489 A JP 18564489A JP H0349310 A JPH0349310 A JP H0349310A
- Authority
- JP
- Japan
- Prior art keywords
- surface acoustic
- acoustic wave
- crystal substrate
- piezoelectric crystal
- covering member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 54
- 239000013078 crystal Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000011800 void material Substances 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 abstract description 4
- 230000008646 thermal stress Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 235000011962 puddings Nutrition 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003462 Bender reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) この発明は弾性表面波デバイスに関する。[Detailed description of the invention] (Industrial application field) The present invention relates to surface acoustic wave devices.
(従来技術)
従来、弾性表面波デバイスとしては、たとえば圧電結晶
基板としての水晶基板上にインクディジタルトランスデ
ユーサなどを形成したものがあった。このような弾性表
面波デバイスでは、水晶基板の弾性表面波伝搬部分を保
護し、また弾性表面波デバイスの表面実装化を進めるた
めに、被覆部材が取り付けられる。この被覆部材は、水
晶基板の弾性表面波伝搬部分上に間隙部分が形成される
ように取り付けられる。この間隙部分は、弾性表面波の
伝搬を妨げないためのものである。(Prior Art) Conventionally, as surface acoustic wave devices, there have been devices in which an ink digital transducer or the like is formed on a quartz crystal substrate as a piezoelectric crystal substrate, for example. In such a surface acoustic wave device, a covering member is attached in order to protect the surface acoustic wave propagation portion of the crystal substrate and to facilitate surface mounting of the surface acoustic wave device. This covering member is attached so that a gap portion is formed over the surface acoustic wave propagation portion of the crystal substrate. The purpose of this gap is to prevent propagation of surface acoustic waves.
(発明が解決しようとする課題)
しかしながら、このような従来の弾性表面波デバイスで
は、製造時や実装時に、熱ストレスの影響を受けやすい
、たとえば、水晶基板と被覆部材との熱膨張係数が異な
るため、雰囲気温度によって反りやクランクなどが発生
したり、気密性が劣化したりする。(Problem to be Solved by the Invention) However, such conventional surface acoustic wave devices are susceptible to thermal stress during manufacturing and mounting, for example, because the thermal expansion coefficients of the crystal substrate and the covering member are different. Therefore, depending on the ambient temperature, warping or cranking may occur, or the airtightness may deteriorate.
それゆえに、この発明の主たる目的は、雰囲気温度によ
って熱ストレスの影響を受けにくい、弾性表面波デバイ
スを提供することである。Therefore, the main object of the present invention is to provide a surface acoustic wave device that is less susceptible to thermal stress caused by ambient temperature.
(課題を解決するための手段)
この発明は、圧電結晶基板を用いた弾性表面波素子と、
圧電結晶基板の弾性表面波伝搬部分を覆いかつ弾性表面
波伝搬部分上に空隙部分が形成されるように圧電結晶基
板に接着される被覆部材とを含み、被覆部材は圧電結晶
基板と同じ材料で形成され、被覆部材は圧電結晶基板と
同じカット角でカットされかつ被覆部材の結晶軸と圧電
結晶基板の結晶軸とが一致する向きに配置された、弾性
表面波デバイスである。(Means for Solving the Problems) The present invention provides a surface acoustic wave element using a piezoelectric crystal substrate,
a covering member adhered to the piezoelectric crystal substrate so as to cover the surface acoustic wave propagating portion of the piezoelectric crystal substrate and to form a void portion over the surface acoustic wave propagating portion, the covering member being made of the same material as the piezoelectric crystal substrate; This is a surface acoustic wave device in which the covering member is cut at the same cut angle as the piezoelectric crystal substrate and is arranged in a direction in which the crystal axis of the covering member and the crystal axis of the piezoelectric crystal substrate coincide.
(作用)
被覆部材と圧電結晶基板とが、同一方向でほぼ等しい熱
膨張係数を有する。(Function) The covering member and the piezoelectric crystal substrate have substantially the same coefficient of thermal expansion in the same direction.
(、発明の効果)
この発明によれば、雰囲気温度の変化によっても、圧電
結晶基板に反りやクラックなどが発生しに<<、気密性
の劣化なども生じにくい弾性表面波デバイスを得ること
ができる。(Effects of the Invention) According to the present invention, it is possible to obtain a surface acoustic wave device that does not cause warping or cracks in the piezoelectric crystal substrate and does not cause deterioration of airtightness even when the ambient temperature changes. can.
この発明の上述の目的、その他の目的、特徴および利点
は、図面を参照して行う以下の実施例の詳細な説明から
一層明らかどなろう。The above objects, other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.
(実施例)
第1図はこの発明の一実施例を示す斜視図であり、第2
図は第1図実施例の線n−rrにおける断面図である。(Embodiment) FIG. 1 is a perspective view showing an embodiment of the present invention, and FIG.
The figure is a sectional view taken along the line n-rr of the embodiment of FIG.
弾性表面波デバイス10は弾性表面波素子を含む。弾性
表面波素子としては、たとえば第3図に示すような弾性
表面波共振子12が用いられる。弾性表面波共振子12
は、たとえば圧電結晶基板としての水晶基板14を含む
。水晶基板14は、たとえば矩形板状に形成される。Surface acoustic wave device 10 includes a surface acoustic wave element. As the surface acoustic wave element, for example, a surface acoustic wave resonator 12 as shown in FIG. 3 is used. Surface acoustic wave resonator 12
includes, for example, a crystal substrate 14 as a piezoelectric crystal substrate. The crystal substrate 14 is formed, for example, into a rectangular plate shape.
水晶基板14の一方主面上には、その中央部分にインク
ディジタルトランスデユーサ16が形成される。An ink digital transducer 16 is formed on one main surface of the crystal substrate 14 at the center thereof.
水晶基板14の一方主面上には、その長手方向に間隔を
隔てて、インクディジタルトランスデユーサ16を挟む
ようにしてリフレクタ18が形成される。リフレクタ1
8は、互いに平行な複数の電極指を水晶基板I4の長手
方向に並べることによって形成される。これらのインク
ディジタルトランスデユーサ16やリフレクタ18は、
たとえばアルミニウムなどで形成される。Reflectors 18 are formed on one main surface of the crystal substrate 14 at intervals in the longitudinal direction so as to sandwich the ink digital transducer 16 therebetween. Reflector 1
8 is formed by arranging a plurality of mutually parallel electrode fingers in the longitudinal direction of the crystal substrate I4. These ink digital transducer 16 and reflector 18 are
For example, it is made of aluminum.
水晶基板14の長手方向の両端には、取付はパッド20
が形成される。取付はパッド20が水晶基板14の両端
に形成されるのは、弾性表面波の伝搬が2つのりフレフ
タ18間に限られるためである。これらの取付はパッド
20は、接続電極22によってインタディジタルトラン
スデユーサ16に接続される。したがって、この弾性表
面波共振子12は、1ボートタイプの弾性表面波共振子
となる。At both ends of the crystal substrate 14 in the longitudinal direction, pads 20 are attached.
is formed. The reason why the mounting pads 20 are formed at both ends of the crystal substrate 14 is that the propagation of surface acoustic waves is limited to between the two benders 18. These mounting pads 20 are connected to the interdigital transducer 16 by connection electrodes 22. Therefore, this surface acoustic wave resonator 12 is a one-boat type surface acoustic wave resonator.
弾性表面波共振子12の一方主面上には、被覆部材24
が取り付けられる。被覆部材24は、弾性表面波伝搬部
分すなわちインクディジタルトランスデューサ16形成
部分およびリフレクタ18形成部分を覆うように取り付
けられる。この被覆部材24は、水晶基板14と同じ材
料で形成される。これらの被覆部材24および水晶基板
14は、同じカット角でカットされ、両方の結晶軸の向
きが同じになるように配置される。A covering member 24 is provided on one main surface of the surface acoustic wave resonator 12.
can be installed. The covering member 24 is attached so as to cover the surface acoustic wave propagation portion, that is, the portion where the ink digital transducer 16 is formed and the portion where the reflector 18 is formed. This covering member 24 is made of the same material as the crystal substrate 14. These covering member 24 and crystal substrate 14 are cut at the same cut angle and are arranged so that both crystal axes are oriented in the same direction.
被覆部材24は、接着剤層26によって水晶基板14に
取り付けられる。接着剤としては、たとえばガラスフリ
ットや高温キュアタイプのシール剤が望ましい。この接
着剤層26によって、被覆部材24と水晶基板14との
間に空隙部分28が形成される。この空隙部分28が形
成されることによって、水晶基板14上の弾性表面波の
伝搬が妨げられない。Covering member 24 is attached to quartz substrate 14 by adhesive layer 26 . As the adhesive, for example, glass frit or a high temperature cure type sealant is desirable. This adhesive layer 26 forms a gap 28 between the covering member 24 and the crystal substrate 14 . By forming this void portion 28, propagation of surface acoustic waves on the crystal substrate 14 is not hindered.
このような弾性表面波デバイスlOは、たとえば第4図
に示すように、プリント基板30に取り付けられる。こ
の場合、プリン)5板30には、被覆部材24に対応す
る部分に孔32が形成される。この孔32に被覆部材2
4が嵌まるように、弾性表面波デバイスIOが配置され
る。そして、取付はパッド20とプリンIIJ板30の
電極パターン34とがはんだ付けなどによって接続され
る。Such a surface acoustic wave device IO is attached to a printed circuit board 30, as shown in FIG. 4, for example. In this case, a hole 32 is formed in the pudding 5 plate 30 at a portion corresponding to the covering member 24. Covering member 2 is inserted into this hole 32.
The surface acoustic wave device IO is arranged so that 4 is fitted into the surface acoustic wave device IO. Then, the pad 20 and the electrode pattern 34 of the Pudding IIJ board 30 are connected by soldering or the like.
この場合、はんだ付けがしやすいように、取付はパッド
20にたとえばニッケルや銀などをバンプとして蒸着し
ておけばよい。なお、被覆部材24が薄く形成されてい
れば、プリント基板30に孔を形成する必要はない。In this case, for example, nickel, silver, or the like may be deposited on the pad 20 as a bump to facilitate soldering. Note that if the covering member 24 is formed thinly, there is no need to form holes in the printed circuit board 30.
このような弾性表面波デバイス10では、水晶基板14
と被覆部材24とが、同一方向でほぼ等しい熱膨張係数
を有する。したがって、弾性表面波デバイス10を製造
するときやプリント基板なとこに実装するときに、外部
から熱が加わっても、反りやクランクなどが発生せず、
気密性も劣化しにくい。また、弾性表面波デバイス10
をプリント基板などに実装した後も、雰囲気温度の変化
などによってこれらの熱ストレスの影響を受けにくい。In such a surface acoustic wave device 10, the crystal substrate 14
and the covering member 24 have substantially the same coefficient of thermal expansion in the same direction. Therefore, when manufacturing the surface acoustic wave device 10 or mounting it on a printed circuit board, even if heat is applied from the outside, warping or cranking will not occur.
Airtightness is also less likely to deteriorate. In addition, the surface acoustic wave device 10
Even after it is mounted on a printed circuit board, etc., it is less susceptible to thermal stress caused by changes in ambient temperature.
なお、上述の実施例では、圧電結晶基板として水晶基板
を用いたが、弾性表面波デバイスとして耐熱性を有する
ものであれば、他の単結晶基板を用いてもよい。In the above embodiment, a quartz crystal substrate was used as the piezoelectric crystal substrate, but other single crystal substrates may be used as long as they have heat resistance as a surface acoustic wave device.
また、弾性表面波素子としては、共振子以外にも、たと
えば2ポートタイプのフィルタなど他の弾性表面波素子
を使用することができる。In addition to the resonator, other surface acoustic wave elements such as a two-port filter can be used as the surface acoustic wave element.
第1図はこの発明の一実施例を示す斜視図である。
第2図は第1図に示す弾性表面波デバイスの線■−■に
おける断面図である。
第3図は第1図および第2図に示す弾性表面波デバイス
に用いられる弾性表面波素子の一例を示す平面図である
。
第4図は第1図に示す弾性表面波素子をプリント基板に
実装した状態を示す図解図である。
図において、10は弾性表面波デバイス、12は弾性表
面波素子としての弾性表面波共振子、14は圧電結晶基
板としての水晶基板、24は被覆部材、28は空隙部分
を示す。FIG. 1 is a perspective view showing an embodiment of the present invention. FIG. 2 is a cross-sectional view of the surface acoustic wave device shown in FIG. 1 taken along line 1--2. FIG. 3 is a plan view showing an example of a surface acoustic wave element used in the surface acoustic wave device shown in FIGS. 1 and 2. FIG. FIG. 4 is an illustrative view showing a state in which the surface acoustic wave device shown in FIG. 1 is mounted on a printed circuit board. In the figure, 10 is a surface acoustic wave device, 12 is a surface acoustic wave resonator as a surface acoustic wave element, 14 is a crystal substrate as a piezoelectric crystal substrate, 24 is a covering member, and 28 is a gap portion.
Claims (1)
弾性表面波伝搬部分上に空隙部分が形成されるように前
記圧電結晶基板に接着される被覆部材を含み、 前記被覆部材は前記圧電結晶基板と同じ材料で形成され
、 前記被覆部材は前記圧電結晶基板と同じカット角でカッ
トされかつ前記被覆部材の結晶軸と前記圧電結晶基板の
結晶軸とが一致する向きに配置された、弾性表面波デバ
イス。 2 前記被覆部材と前記圧電結晶基板とはほぼ同じ厚さ
に形成される、特許請求の範囲第1項記載の弾性表面波
デバイス。[Scope of Claims] 1. A surface acoustic wave element using a piezoelectric crystal substrate, and a surface acoustic wave element that covers a surface acoustic wave propagation portion of the piezoelectric crystal substrate and forms a void portion on the surface acoustic wave propagation portion. a covering member adhered to the crystal substrate, the covering member being formed of the same material as the piezoelectric crystal substrate, the covering member being cut at the same cut angle as the piezoelectric crystal substrate, and the crystal axis of the covering member and the A surface acoustic wave device arranged in a direction that matches the crystal axis of a piezoelectric crystal substrate. 2. The surface acoustic wave device according to claim 1, wherein the covering member and the piezoelectric crystal substrate are formed to have substantially the same thickness.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18564489A JPH0349310A (en) | 1989-07-17 | 1989-07-17 | Surface acoustic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18564489A JPH0349310A (en) | 1989-07-17 | 1989-07-17 | Surface acoustic wave device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0349310A true JPH0349310A (en) | 1991-03-04 |
Family
ID=16174378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18564489A Pending JPH0349310A (en) | 1989-07-17 | 1989-07-17 | Surface acoustic wave device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0349310A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5729185A (en) * | 1996-04-29 | 1998-03-17 | Motorola Inc. | Acoustic wave filter package lid attachment apparatus and method utilizing a novolac epoxy based seal |
WO2001077633A1 (en) * | 2000-04-12 | 2001-10-18 | Marconi Optical Components Limited | Surface acoustic wave type strain sensor |
JP2002217673A (en) * | 2001-01-15 | 2002-08-02 | Matsushita Electric Ind Co Ltd | Saw device, manufacturing method thereof, and electronic component using the same |
JP2006246112A (en) * | 2005-03-04 | 2006-09-14 | Matsushita Electric Ind Co Ltd | Surface acoustic wave device and its manufacturing method |
JP2010246167A (en) * | 2010-07-22 | 2010-10-28 | Panasonic Corp | Saw device and manufacturing method thereof |
-
1989
- 1989-07-17 JP JP18564489A patent/JPH0349310A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5729185A (en) * | 1996-04-29 | 1998-03-17 | Motorola Inc. | Acoustic wave filter package lid attachment apparatus and method utilizing a novolac epoxy based seal |
WO2001077633A1 (en) * | 2000-04-12 | 2001-10-18 | Marconi Optical Components Limited | Surface acoustic wave type strain sensor |
JP2002217673A (en) * | 2001-01-15 | 2002-08-02 | Matsushita Electric Ind Co Ltd | Saw device, manufacturing method thereof, and electronic component using the same |
JP4691787B2 (en) * | 2001-01-15 | 2011-06-01 | パナソニック株式会社 | SAW device |
JP2006246112A (en) * | 2005-03-04 | 2006-09-14 | Matsushita Electric Ind Co Ltd | Surface acoustic wave device and its manufacturing method |
JP2010246167A (en) * | 2010-07-22 | 2010-10-28 | Panasonic Corp | Saw device and manufacturing method thereof |
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