JPH0330308B2 - - Google Patents
Info
- Publication number
- JPH0330308B2 JPH0330308B2 JP56121113A JP12111381A JPH0330308B2 JP H0330308 B2 JPH0330308 B2 JP H0330308B2 JP 56121113 A JP56121113 A JP 56121113A JP 12111381 A JP12111381 A JP 12111381A JP H0330308 B2 JPH0330308 B2 JP H0330308B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- capacitor
- gate
- liquid crystal
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 38
- 239000003990 capacitor Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 20
- 239000004973 liquid crystal related substance Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 6
- 230000014759 maintenance of location Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- -1 BnO 2 Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical group 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56121113A JPS5821863A (ja) | 1981-07-31 | 1981-07-31 | 液晶表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56121113A JPS5821863A (ja) | 1981-07-31 | 1981-07-31 | 液晶表示装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6202193A Division JP2668317B2 (ja) | 1993-03-22 | 1993-03-22 | アクティブマトリクスパネル |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5821863A JPS5821863A (ja) | 1983-02-08 |
| JPH0330308B2 true JPH0330308B2 (de) | 1991-04-26 |
Family
ID=14803199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56121113A Granted JPS5821863A (ja) | 1981-07-31 | 1981-07-31 | 液晶表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5821863A (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60179723A (ja) * | 1984-02-27 | 1985-09-13 | Sharp Corp | 液晶プロジエクシヨン装置 |
| USRE36725E (en) * | 1984-10-22 | 2000-06-06 | Seiko Epson Corporation | Projection-type display device |
| US5162901A (en) * | 1989-05-26 | 1992-11-10 | Sharp Kabushiki Kaisha | Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto |
| EP0482737B1 (de) * | 1990-09-27 | 1995-08-09 | Sharp Kabushiki Kaisha | Anzeigeeinrichtung mit aktiver Matrix |
| KR920006894A (ko) * | 1990-09-27 | 1992-04-28 | 쓰지 하루오 | 액티브 매트릭스 표시장치 |
| JP3173926B2 (ja) | 1993-08-12 | 2001-06-04 | 株式会社半導体エネルギー研究所 | 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54106193A (en) * | 1978-02-08 | 1979-08-20 | Sharp Corp | Driving method for matrix type liquid crystal display unit |
-
1981
- 1981-07-31 JP JP56121113A patent/JPS5821863A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54106193A (en) * | 1978-02-08 | 1979-08-20 | Sharp Corp | Driving method for matrix type liquid crystal display unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5821863A (ja) | 1983-02-08 |
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