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JPH0534836B2 - - Google Patents

Info

Publication number
JPH0534836B2
JPH0534836B2 JP57074014A JP7401482A JPH0534836B2 JP H0534836 B2 JPH0534836 B2 JP H0534836B2 JP 57074014 A JP57074014 A JP 57074014A JP 7401482 A JP7401482 A JP 7401482A JP H0534836 B2 JPH0534836 B2 JP H0534836B2
Authority
JP
Japan
Prior art keywords
thin film
film transistor
liquid crystal
current
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57074014A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5921064A (ja
Inventor
Hiroyuki Ooshima
Toshimoto Kodaira
Toshihiko Mano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP57074014A priority Critical patent/JPS5921064A/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to GB8311219A priority patent/GB8311219D0/en
Priority to FR8307125A priority patent/FR2530868B1/fr
Priority to DE19833315671 priority patent/DE3315671C2/de
Priority to GB8311878A priority patent/GB2122419B/en
Priority to FR8313382A priority patent/FR2532116B1/fr
Publication of JPS5921064A publication Critical patent/JPS5921064A/ja
Priority to SG39888A priority patent/SG39888G/en
Priority to HK70189A priority patent/HK70189A/xx
Priority to US08/014,053 priority patent/US5365079A/en
Publication of JPH0534836B2 publication Critical patent/JPH0534836B2/ja
Priority to US08/259,354 priority patent/US6037608A/en
Priority to US08/237,521 priority patent/US5474942A/en
Priority to US08/406,419 priority patent/US5650637A/en
Priority to US08/408,979 priority patent/US5552615A/en
Priority to US08/445,030 priority patent/US5573959A/en
Priority to US08/461,933 priority patent/US5677547A/en
Priority to US08/859,494 priority patent/US6316790B1/en
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136213Storage capacitors associated with the pixel electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • H01L29/456Ohmic electrodes on silicon
    • H01L29/458Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/10Materials and properties semiconductor
    • G02F2202/104Materials and properties semiconductor poly-Si
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Crystal (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
JP57074014A 1982-04-30 1982-04-30 液晶表示装置 Granted JPS5921064A (ja)

Priority Applications (16)

Application Number Priority Date Filing Date Title
JP57074014A JPS5921064A (ja) 1982-04-30 1982-04-30 液晶表示装置
GB8311219A GB8311219D0 (en) 1982-04-30 1983-04-25 Thin film transistor
FR8307125A FR2530868B1 (fr) 1982-04-30 1983-04-29 Transistor a couche mince et dispositif d'affichage a cristaux liquides utilisant ce transistor
DE19833315671 DE3315671C2 (de) 1982-04-30 1983-04-29 Dünnfilmtransistor
GB8311878A GB2122419B (en) 1982-04-30 1983-04-29 A thin film transistor and an active matrix liquid crystal display device
FR8313382A FR2532116B1 (fr) 1982-04-30 1983-08-17 Transistor a couche mince et dispositif d'affichage a cristaux liquides utilisant ce transistor
SG39888A SG39888G (en) 1982-04-30 1988-06-20 An active matrix liquid crystal display device
HK70189A HK70189A (en) 1982-04-30 1989-08-31 An active matrix liquid crystal display device
US08/014,053 US5365079A (en) 1982-04-30 1993-02-05 Thin film transistor and display device including same
US08/259,354 US6037608A (en) 1982-04-30 1994-05-03 Liquid crystal display device with crossover insulation
US08/237,521 US5474942A (en) 1982-04-30 1994-05-03 Method of forming a liquid crystal display device
US08/406,419 US5650637A (en) 1982-04-30 1995-03-20 Active matrix assembly
US08/408,979 US5552615A (en) 1982-04-30 1995-03-23 Active matrix assembly with double layer metallization over drain contact region
US08/445,030 US5573959A (en) 1982-04-30 1995-05-19 Method of forming a liquid crystal device
US08/461,933 US5677547A (en) 1982-04-30 1995-06-05 Thin film transistor and display device including same
US08/859,494 US6316790B1 (en) 1982-04-30 1997-05-20 Active matrix assembly with light blocking layer over channel region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57074014A JPS5921064A (ja) 1982-04-30 1982-04-30 液晶表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP8673694A Division JP2564995B2 (ja) 1994-04-25 1994-04-25 液晶表示装置

Publications (2)

Publication Number Publication Date
JPS5921064A JPS5921064A (ja) 1984-02-02
JPH0534836B2 true JPH0534836B2 (de) 1993-05-25

Family

ID=13534814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57074014A Granted JPS5921064A (ja) 1982-04-30 1982-04-30 液晶表示装置

Country Status (3)

Country Link
JP (1) JPS5921064A (de)
DE (1) DE3315671C2 (de)
GB (1) GB8311219D0 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179256A (ja) * 1984-09-26 1986-04-22 Seiko Instr & Electronics Ltd 薄膜トランジスタ
JPH0374849A (ja) * 1989-08-16 1991-03-29 Matsushita Electron Corp 半導体装置
JPH0456282A (ja) * 1990-06-25 1992-02-24 Matsushita Electron Corp 薄膜トランジスタとそれを用いた液晶表示装置
US5317433A (en) * 1991-12-02 1994-05-31 Canon Kabushiki Kaisha Image display device with a transistor on one side of insulating layer and liquid crystal on the other side
JP3092761B2 (ja) * 1991-12-02 2000-09-25 キヤノン株式会社 画像表示装置及びその製造方法
JP2869238B2 (ja) * 1992-02-07 1999-03-10 シャープ株式会社 アクティブマトリクス型液晶表示装置
JP2738315B2 (ja) * 1994-11-22 1998-04-08 日本電気株式会社 薄膜トランジスタおよびその製造方法
FR2734404B1 (fr) * 1995-05-16 1997-06-27 Thomson Lcd Procede de fabrication de tft etages directs avec interconnexion grille-source ou drain
US7053973B1 (en) 1996-05-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Display device
JPH09311342A (ja) 1996-05-16 1997-12-02 Semiconductor Energy Lab Co Ltd 表示装置
JP3126661B2 (ja) 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 液晶表示装置
EP2284605A3 (de) * 1999-02-23 2017-10-18 Semiconductor Energy Laboratory Co, Ltd. Halbleiterbauelement und Verfahren zu dessen Herstellung
US9035389B2 (en) * 2012-10-22 2015-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. Layout schemes for cascade MOS transistors
JP6466614B2 (ja) * 2018-06-04 2019-02-06 株式会社半導体エネルギー研究所 液晶表示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5492022A (en) * 1977-12-29 1979-07-20 Matsushita Electric Ind Co Ltd Picture display device
JPS5562479A (en) * 1978-11-06 1980-05-10 Suwa Seikosha Kk Liquid crystal display panel
JPS5691276A (en) * 1979-12-25 1981-07-24 Citizen Watch Co Ltd Display panel
JPS56107287A (en) * 1980-01-31 1981-08-26 Tokyo Shibaura Electric Co Image display unit
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5492022A (en) * 1977-12-29 1979-07-20 Matsushita Electric Ind Co Ltd Picture display device
JPS5562479A (en) * 1978-11-06 1980-05-10 Suwa Seikosha Kk Liquid crystal display panel
JPS5691276A (en) * 1979-12-25 1981-07-24 Citizen Watch Co Ltd Display panel
JPS56107287A (en) * 1980-01-31 1981-08-26 Tokyo Shibaura Electric Co Image display unit
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
DE3315671C2 (de) 1986-04-10
GB8311219D0 (en) 1983-06-02
DE3315671A1 (de) 1983-11-03
JPS5921064A (ja) 1984-02-02

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