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JPH0472645A - Wafer prober - Google Patents

Wafer prober

Info

Publication number
JPH0472645A
JPH0472645A JP2186487A JP18648790A JPH0472645A JP H0472645 A JPH0472645 A JP H0472645A JP 2186487 A JP2186487 A JP 2186487A JP 18648790 A JP18648790 A JP 18648790A JP H0472645 A JPH0472645 A JP H0472645A
Authority
JP
Japan
Prior art keywords
wafer
contact
pressure
stage
needle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2186487A
Other languages
Japanese (ja)
Inventor
Motoharu Ishii
元治 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2186487A priority Critical patent/JPH0472645A/en
Publication of JPH0472645A publication Critical patent/JPH0472645A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To make a test in an always uniform contact state by a method wherein a raised pressure is stored as a good-product pressure data, the contact on all chips is confirmed by means of a monitor needle by using the data and, after that, a pressure according to the good-product pressure data is exerted. CONSTITUTION:A pressure is input/output from and to the lower part; a stage 4 is raised and lowered; at this time, a pressure 5 is raised form a point where the contact is confirmed by the contact with a monitor needle 2; and the pressure 5 is read out at a point of an optimum contact pressure. A good-product initial data is first stored by said measuring method. Then, an automatic prober is actuated automatically. Even when the interval (between a probe needle and a wafer) of the probe needle 2 is changed by a change in surroundings, the pressure 5 is exerted on the stage 4, the stage is raised, the good-product stored pressure is exerted after the contact has been confirmed by using the monitor needle 2 and a measuring operation is executed. It is possible to obtain the uniform contact with the surface of a wafer 3.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体集積回路のテストに用いられるウエハ
プローパに関するものであり、特に半導体集積回路試験
装置(以下テストシステムと示す)と半導体集積回路と
の電気的接触に関するものである。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a wafer properr used for testing semiconductor integrated circuits, and in particular to a semiconductor integrated circuit testing device (hereinafter referred to as a test system) and a semiconductor integrated circuit. electrical contact.

〔従来の技術〕[Conventional technology]

第4図囚は、ウェハプローブにおいてテストシステムと
ウェハとの接触方法を示す断面図であり、図において、
(1)はプローブカード、(2)はプローブ針、(3)
 Fiウェハ、(4)はプローバのステージ、(5)は
テストシステム、第4図(ト)はテストシステムとの電
気的接触方法(プローブ針とウェハ)、第4図(qはウ
エハプローバの動作、第4図Φ)は接触不良の一例を示
しく6)はホコリであシ、第4図(ト)はテスト結果を
示す。
FIG.
(1) is a probe card, (2) is a probe needle, (3)
Fi wafer, (4) is the prober stage, (5) is the test system, Figure 4 (g) is the electrical contact method with the test system (probe needle and wafer), Figure 4 (q is the operation of the wafer prober) , FIG. 4(Φ) shows an example of poor contact, 6) shows dust, and FIG. 4(G) shows the test results.

次に動作について説明する半導体集積回路において、テ
ストシステムとウェハとの電気的接触を行う方法は、第
4図の)のように、プローブ針をウニ八表面上の1チツ
プのパットにあて、テストシステムよシ1チップに信号
を入力して試験を行なうが、このプローブ針(2)とウ
ェハ(3)との接触は、オートテストの前にiニュアル
にて良品チップのテストシステムへのデータや目視によ
るグローブ針のパットへのキズあとを確認し、プローブ
カードとステージを固定して、第4図(・のように(C
) −1にて1チツプの測定後(c) −2にてステー
ジが下がC1(0)−3にて次のチップの下にステージ
が移動し、(c)−4にてステージが、前チップと同−
間隔上がり測定を行う方法であった。
In the semiconductor integrated circuit whose operation will be explained next, the method of making electrical contact between the test system and the wafer is to place the probe needle on the pad of one chip on the surface of the sea urchin, as shown in Figure 4). The test is performed by inputting a signal to the system chip 1, but the contact between the probe needle (2) and the wafer (3) is determined by inputting the data to the test system of the good chip in the i-Manual before the auto test. Visually check for any scratches on the glove needle pad, fix the probe card and stage, and then fix the probe card and stage as shown in Figure 4 (C).
) After measuring one chip at (c) -1, the stage moves down to C1 (0) at -2.The stage moves below the next chip at (c)-3, and at (c)-4, the stage moves to the bottom. Same as previous chip
This method was to measure the distance increase.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来のウェハプローバ装置は、以上のように構成されて
いるので、1例ではあるがウエハプローバのステージと
ウェハの間にホコリが入シ、初めにホーコリのある場所
で良品を確認し、流した場合、ホコリのない場所におい
て接触不良をおζす問題点があった。
Conventional wafer prober equipment is configured as described above, so in one example, dust may enter between the stage of the wafer prober and the wafer. In this case, there was a problem of poor contact in dust-free areas.

この発明は、上記のような問題点を解消するため釦なさ
れたもので、グローブ針とウェハ表面上の全チップにお
いて、電気的接触を均一に得をことを目的とする。
The present invention has been developed to solve the above-mentioned problems, and aims to achieve uniform electrical contact between the glove needle and all chips on the wafer surface.

〔課題を解決するための手段〕[Means to solve the problem]

この発明におけるウェハプローブは、ステージを針に接
触させるのにモニタープローブ針及び圧力を利用したも
のである。
The wafer probe in this invention uses a monitor probe needle and pressure to bring the stage into contact with the needle.

〔作用〕[Effect]

この発明におけるウエハプローバは、プローブ針とウェ
ハとの接触を圧力として表わしたことにより、常に均一
な接触でテストを行える。
The wafer prober of the present invention expresses the contact between the probe needle and the wafer as pressure, so that tests can always be performed with uniform contact.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。第1
図は、本発明のウエハプローバのステージの構造の原理
であシ、(1)はプローブカード、(2)はモニターグ
ローブ針、(3)はウェハ、(4)はステージ、(5)
は圧力、(6)は圧力計である。
An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure shows the principle of the structure of the stage of the wafer prober of the present invention. (1) is a probe card, (2) is a monitor glove needle, (3) is a wafer, (4) is a stage, and (5) is a probe card.
is the pressure, and (6) is the pressure gauge.

第2図における(、)は、初期の良品チップの測定を示
し、(b)は環境(グローブカードとプローブ針との接
続状態)などでグローブ針とウェハとの間隔に変化が生
じた状態であり、(C)は圧力により、ステージを上昇
させ、モニター針がモニターする、までステージを上昇
させて圧力を加え測定を行なう状態であり、(d)は自
動テス)Kおけるフローチャートである。
In Figure 2, (,) indicates the measurement of an initial good chip, and (b) indicates the measurement when the distance between the glove needle and the wafer has changed due to the environment (connection state between the glove card and the probe needle), etc. (C) is a state in which the stage is raised by pressure, the stage is raised until the monitor needle monitors, pressure is applied, and measurement is performed, and (d) is a flowchart for automatic test (K).

第3図は実例図である。FIG. 3 is an example diagram.

本発明のクエハプローバの構造は、ステージとプローブ
針との接触を行なう場合、第1図にかいて、圧力を下よ
り入出力させることによりステージを上下させ、その時
、モニター針に接触により接触を確Vした地点より圧力
を上げ、最適な接触圧力地点において圧力(針圧)を読
みとり記憶させたことが特徴である。
In the structure of the Queha prober of the present invention, when the stage and the probe needle are brought into contact, as shown in FIG. The feature is that the pressure is increased from the point where V is applied, and the pressure (stylus pressure) is read and memorized at the optimal contact pressure point.

次に動作について説明を行なう。初めに第2図(−にお
いて、同上の測定方法によ)、良品初期データを記憶さ
せる。次に自動によりオートプローバを動作させる。第
2図〜)のようにプローブ針が環境の変化にて間隔(プ
ローブ針とウェハ)が変化した場合でも、第2図(C)
ステージに圧力が加わプ上昇し、モニター針によ〕接触
を確認した後に良品記憶圧力を加えて測定を行なうこと
によりウェハ表面上、均一な接触を得ることが出来る。
Next, the operation will be explained. First, as shown in FIG. 2 (-, according to the same measurement method as above), the initial data of non-defective products is stored. Next, the autoprober is operated automatically. Even if the distance between the probe needle and the wafer (probe needle and wafer) changes due to changes in the environment, as shown in Figure 2 (C),
Pressure is applied to the stage and the stage rises, and after confirming contact with a monitor needle, uniform contact can be obtained on the wafer surface by applying pressure to memorize good products and performing measurement.

第3図は一実施例であり、車のピストンのような構造に
し、回転軸に同上の構造を採用して、制御を行っている
FIG. 3 shows one embodiment, in which the structure is similar to a piston in a car, and the same structure as above is used for the rotating shaft to perform control.

同構造はハンドラにおいても実施出来る。The same structure can also be implemented in the handler.

〔発明の効果〕〔Effect of the invention〕

以とのように、1紀発明によりグローブカードとウェハ
との接触を均一にしたことにより、接触状態の変化によ
る不良を回避することが出来るため歩留シの向上が見込
まれる。
As described above, by making the contact between the glove card and the wafer uniform according to the invention of the first century, it is possible to avoid defects due to changes in the contact state, and thus an improvement in yield is expected.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の原理図、第2図は第1図の
動作図及びフローチャート、第3図は本発明の実施例の
構成図、第4図は従来のウェハプローブを説明するため
の説明図である。 図中、(1)はプローブカード、(2)はモニタープロ
ーブ針、(3)はウェハ、(4)はステージ、(5)は
圧力、(6)は圧力計である。 なお、図中、同一符号は同−又は相当部分を示す0
Fig. 1 is a principle diagram of an embodiment of the present invention, Fig. 2 is an operation diagram and flowchart of Fig. 1, Fig. 3 is a configuration diagram of an embodiment of the invention, and Fig. 4 explains a conventional wafer probe. FIG. In the figure, (1) is a probe card, (2) is a monitor probe needle, (3) is a wafer, (4) is a stage, (5) is a pressure, and (6) is a pressure gauge. In addition, in the figures, the same symbols indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims]  半導体集積回路のウェハ状態におけるテストを行なう
ためのウエハプローバ装置において、プローブ針とIC
チップの電極パットとの電気的接触をICウエハ上の全
チップに対して均一に保つためにICウエハを置いてい
るプローバのステージをプローブ針の垂直へ押し上げる
力を、プローブ針にモニターをもうけ、モニターにより
ウエハとの接触を確認し、その後、最適な、プローブ針
とステージとの接触までステージを上昇させ、その上昇
させた圧力を良品圧力データと記憶させ、以上のデータ
を用いて、全チップ、モニター針にて接触を確認の後に
以上の良品圧力データの圧力を加えることにより、ウエ
ハ表面の全てに、均一に接触が行なえることを特徴とし
たウエハプローバ。
In a wafer prober device for testing semiconductor integrated circuits in their wafer state, probe needles and IC
In order to maintain uniform electrical contact with the electrode pads of the chips for all chips on the IC wafer, a monitor is installed on the probe needle to apply a force that pushes up the stage of the prober on which the IC wafer is placed perpendicular to the probe needle. Confirm the contact with the wafer using a monitor, then raise the stage to the optimal contact between the probe needle and the stage, store the increased pressure as good product pressure data, and use the above data to determine whether all chips are in contact with the wafer. A wafer prober is characterized in that it can uniformly contact the entire wafer surface by applying pressure according to the above-mentioned good product pressure data after confirming contact with a monitor needle.
JP2186487A 1990-07-12 1990-07-12 Wafer prober Pending JPH0472645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2186487A JPH0472645A (en) 1990-07-12 1990-07-12 Wafer prober

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2186487A JPH0472645A (en) 1990-07-12 1990-07-12 Wafer prober

Publications (1)

Publication Number Publication Date
JPH0472645A true JPH0472645A (en) 1992-03-06

Family

ID=16189348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2186487A Pending JPH0472645A (en) 1990-07-12 1990-07-12 Wafer prober

Country Status (1)

Country Link
JP (1) JPH0472645A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009105313A (en) * 2007-10-25 2009-05-14 Tokyo Electron Ltd Placement device used in probe device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009105313A (en) * 2007-10-25 2009-05-14 Tokyo Electron Ltd Placement device used in probe device

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