JP7303980B2 - Plasma processing equipment - Google Patents

Description

The present invention relates to a plasma processing apparatus for processing an object using plasma.

2. Description of the Related Art A conventional plasma processing apparatus applies a high-frequency current to an antenna, generates an inductively coupled plasma (abbreviated as ICP) by an induced electric field, and uses this inductively coupled plasma to process an object to be processed such as a substrate. proposed by. As such a plasma processing apparatus, in Patent Document 1, an antenna is arranged outside a vacuum vessel, and a high-frequency magnetic field generated from the antenna is introduced into the vacuum vessel through a dielectric window provided so as to close an opening in the side wall of the vacuum vessel. It is disclosed that a plasma is generated in the processing chamber by passing through the .

JP 2017-004665 A

However, since the dielectric window is used as part of the side wall of the vacuum vessel in the plasma processing apparatus described above, the dielectric window has sufficient strength to withstand the differential pressure between the inside and outside of the vessel when the inside of the vacuum vessel is evacuated. must have. In particular, since the dielectric material constituting the dielectric window is ceramics or glass having low toughness, the thickness of the dielectric window must be sufficiently large in order to have sufficient strength to withstand the differential pressure. As a result, the distance from the antenna to the processing chamber in the vacuum vessel becomes long, and the strength of the induced electric field in the processing chamber is weakened, resulting in a problem of reduced plasma generation efficiency.

The present invention has been made in view of such problems. A main object of the present invention is to provide a plasma processing apparatus capable of efficiently supplying plasma to a chamber.

That is, a plasma processing apparatus according to the present invention uses plasma to vacuum-process an object to be processed placed in a processing chamber. a metal plate provided so as to block and having a slit penetrating therethrough in a thickness direction; a dielectric plate supported in contact with the metal plate and blocking the slit from the outside of the processing chamber; an antenna provided outside the processing chamber so as to face the plate and connected to a high frequency power supply to generate a high frequency magnetic field, wherein the dielectric plate comprises (i) an inorganic layer made of an inorganic material and an organic material; or (ii) a fiber reinforced material in which inorganic fibers are impregnated with an organic material.

That is, in the plasma processing apparatus according to the present invention, the slit formed in the metal plate and the dielectric plate placed thereon form a magnetic field transmission window through which the high-frequency magnetic field generated from the antenna is transmitted to the processing chamber side. ing. With such a configuration, since a part of the member forming the magnetic field permeable window is made of a metal material such as ceramics, which has greater toughness than the dielectric material, the magnetic field permeable window is formed only of the dielectric material. The thickness of the magnetic field permeable window can be reduced compared to the case. In addition, since the dielectric plate is supported in contact with the metal plate, deformation of the dielectric plate during vacuum processing can be reduced, and bending stress generated in the dielectric plate can be reduced. Therefore, the thickness of the dielectric plate itself can be reduced. As a result, the distance from the antenna to the processing chamber can be shortened, and the high-frequency magnetic field generated from the antenna can be efficiently supplied into the processing chamber.
Here, in the plasma processing apparatus according to the present invention, the dielectric plate is formed by combining an inorganic material such as glass or ceramics, which has excellent magnetic field permeability, and an organic material, which has superior flexibility. Therefore, it is possible to suppress rapid breakage of the dielectric plate due to the differential pressure between the inside and outside of the processing chamber during vacuum processing, while reducing the thickness of the dielectric plate.

When the dielectric plate is a laminate of an inorganic layer and an organic layer, it is preferable that the inorganic layer has a plate shape and the organic layer has a sheet shape.
In this case, since the organic layer that improves the flexibility of the dielectric plate is in the form of a sheet, the thickness of the dielectric plate itself can be reduced. In addition, "sheet-like" means "a shape that can be wound up", and "plate-like" means "a shape that cannot be wound up".

When the dielectric plate is a laminate of an inorganic layer and an organic layer, it is preferable that the inorganic layer and the organic layer are laminated in this order from the processing chamber toward the antenna.
When the processing chamber is excessively evacuated, the inorganic layer, which is less flexible than the organic layer, is subjected to a large stress, and the inorganic layer may be damaged, such as cracked, before the organic layer. With the above configuration, the organic layer is laminated on the inorganic layer (that is, the organic layer is located on the atmosphere side), so even if the inorganic layer is cracked or otherwise damaged, , which can be sealed from the atmospheric side by a flexible organic layer. Therefore, sudden pressure fluctuations in the processing chamber due to vacuum leakage can be prevented, and damage to the vacuum pump and the like can be prevented.
Also from the viewpoint of preventing the organic layer from being corroded by the sputtering gas, it is preferable that the inorganic layer and the organic layer are laminated in this order.

When the dielectric plate is a laminate of an inorganic layer and an organic layer, it is preferable that the inorganic layer and the organic layer are bonded to each other.
In this way, since the organic layer and the inorganic layer are laminated and bonded, even if the inorganic layer is damaged such as cracking due to excessive evacuation, the fragments are prevented from scattering. can.

When the dielectric plate is a laminate of an inorganic layer and an organic layer, the inorganic material is selected from alkali-free glass, quartz glass, or ceramics from the viewpoint of reducing dielectric loss and reducing self-heating due to high frequencies. and the organic material is preferably one selected from polytetrafluoroethylene and polyimide.

When the dielectric plate contains a fiber-reinforced material, it is preferable that the inorganic fiber is glass fiber and the organic material is polyimide, from the viewpoint of reducing dielectric loss and self-heating due to high frequency.

When the dielectric plate contains the fiber-reinforced material, it is preferable that the dielectric plate is a laminate of a fiber-reinforced layer made of the fiber-reinforced material and an inorganic layer made of an inorganic material. In this case, it is preferable that the fiber-reinforced layer is in the form of a sheet and the inorganic layer is in the form of a plate.

According to the present invention, in a system in which an antenna is arranged outside a processing chamber, breakage of the dielectric window during vacuum processing is suppressed, and a high-frequency magnetic field generated from the antenna is efficiently supplied to the processing chamber. It is possible to provide a plasma processing apparatus capable of

FIG. 2 is a cross-sectional view orthogonal to the longitudinal direction of the antenna schematically showing the overall configuration of the plasma processing apparatus of this embodiment. FIG. 3 is a cross-sectional view along the longitudinal direction of the antenna schematically showing the overall configuration of the plasma processing apparatus of the same embodiment. FIG. 3 is a cross-sectional view along the longitudinal direction of the antenna, schematically showing the configuration of the window member of the plasma processing apparatus of the same embodiment. The top view seen from the antenna side which shows typically the structure of the dielectric plate of the window member of the same embodiment. FIG. 2 is a plan view viewed from the antenna side schematically showing the configuration of the window member of the plasma processing apparatus of the same embodiment; Sectional drawing along the longitudinal direction of the antenna which shows typically the structure of the dielectric plate of the window member of other embodiment. Sectional drawing along the longitudinal direction of the antenna which shows typically the structure of the dielectric plate of the window member of other embodiment. Sectional drawing along the longitudinal direction of the antenna which shows typically the structure of the dielectric plate of the window member of other embodiment.

A plasma processing apparatus according to one embodiment of the present invention will be described below with reference to the drawings. The plasma processing apparatus described below is for embodying the technical idea of the present invention, and the present invention is not limited to the following unless there is a specific description. Moreover, the content described in one embodiment can also be applied to other embodiments. Also, the sizes and positional relationships of members shown in each drawing may be exaggerated for clarity of explanation.

<Device configuration>
The plasma processing apparatus 100 according to the present embodiment uses inductively coupled plasma P to perform vacuum processing on an object W to be processed such as a substrate. Here, the substrate is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic EL display, a flexible substrate for a flexible display, or the like. The processing applied to the substrate includes, for example, film formation by plasma CVD, etching, ashing, sputtering, and the like.

The plasma processing apparatus 100 of the present embodiment is a plasma CVD apparatus when forming a film by a plasma CVD method, a plasma etching apparatus when performing etching, a plasma ashing apparatus when performing ashing, and a plasma sputtering apparatus when performing sputtering. Also called a device.

More specifically, the plasma processing apparatus 100 includes, as shown in FIG. 3 and a high frequency power source 4 for applying high frequency to the antenna 3 . A magnetic field transmission window 5 is formed in the vacuum vessel 2 for transmitting a high frequency magnetic field generated from the antenna 3 into the processing chamber 1 . When a high frequency is applied to the antenna 3 from the high frequency power supply 4, the high frequency magnetic field generated by the antenna 3 is transmitted through the magnetic field transmission window 5 and formed in the processing chamber 1, thereby generating an induced electric field in the space within the processing chamber 1. , thereby generating an inductively coupled plasma P. As shown in FIG.

The vacuum vessel 2 includes a vessel body 21 and a window member 22 forming the magnetic field transmission window 5 .

The container main body 21 is, for example, a metal container, and the processing chamber 1 is formed inside by the wall (inner wall) thereof. An opening 211 is formed through the wall of the container body 21 (here, the upper wall 21a) in the thickness direction. The window member 22 is detachably attached to the container body 21 so as to close the opening 211 . The container body 21 is electrically grounded, and the space between the window member 22 and the container body 21 is vacuum-sealed by a gasket such as an O-ring or an adhesive.

The vacuum vessel 2 is configured such that the processing chamber 1 is evacuated by the evacuation device 6 . The vacuum container 2 is configured such that the gas G is introduced into the processing chamber 1 via, for example, a flow rate regulator (not shown) and a plurality of gas introduction ports 212 provided in the container body 21 . The gas G may be selected according to the content of the processing to be performed on the substrate W. FIG. For example, when forming a film on a substrate by plasma CVD, the gas G is a raw material gas or a gas obtained by diluting it with a diluent gas (eg, H ₂ ). More specifically, when the source gas is SiH ₄ , the Si film is formed, when the source gas is SiH ₄ +NH ₃ , the SiN film is formed, when SiH ₄ +O ₂ is the SiO ₂ film, and when SiF ₄ +N ₂ is the SiN film. : F film (fluorinated silicon nitride film) can be formed on each substrate.

A substrate holder 7 for holding the substrate W is provided inside the vacuum vessel 2 . A bias voltage may be applied to the substrate holder 7 from the bias power source 8 as in this example. The bias voltage is, for example, a negative DC voltage, a negative bias voltage, or the like, but is not limited to these. With such a bias voltage, for example, the energy of the positive ions in the plasma P when they impinge on the substrate W can be controlled, and the crystallinity of the film formed on the surface of the substrate W can be controlled. . A heater 71 for heating the substrate W may be provided in the substrate holder 7 .

As shown in FIGS. 1 and 2, a plurality of antennas 3 are provided, and each antenna 3 is arranged outside the processing chamber 1 so as to face the magnetic field transmission window 5 . Here, the distance between each antenna 3 and the magnetic field transmission window 5 is about 2 mm. Each antenna 3 is arranged substantially parallel to the surface of the substrate W provided in the processing chamber 1 .

Each of the antennas 3 has the same structure, and has a straight shape (specifically, a cylindrical shape) with a length of several tens of centimeters or more when viewed from the outside. A feeding end 3a, which is one end of the antenna 3, is connected to the high-frequency power source 4 via a matching circuit 41, and the terminal 3b, which is the other end, is directly grounded. Note that the terminal portion 3b may be grounded through a capacitor, a coil, or the like.

Here, each antenna 3 has a hollow structure in which a channel through which the cooling liquid CL can flow is formed. Specifically, as shown in FIG. 2, each antenna 3 includes at least two conductor elements 31 and a capacitor 32 which is a quantitative element electrically connected in series with the adjacent conductor elements 31 . Each antenna 3 here comprises three conductor elements 31 and two capacitors 32 . Each conductor element 31 has the same straight pipe shape (specifically, circular pipe shape) in which a straight flow path is formed for the cooling liquid to flow. The material of each conductor element 31 is, for example, copper, aluminum, an alloy thereof, or a metal such as stainless steel, but the material is not limited to this and may be changed as appropriate.

By configuring each antenna 3 in this way, the combined reactance of the antenna 3 is simply the inductive reactance minus the capacitive reactance, so the impedance of the antenna 3 can be reduced. As a result, even if the antenna 3 is lengthened, the increase in impedance can be suppressed, the high-frequency current IR can easily flow through the antenna 3, and the inductively coupled plasma P can be efficiently generated in the processing chamber 1. .

A high-frequency power supply 4 can supply a high-frequency current IR to the antenna 3 via a matching circuit 41 . The frequency of the high frequency is, for example, a general frequency of 13.56 MHz, but it is not limited to this and may be changed as appropriate.

Thus, in the plasma processing apparatus 100 of the present embodiment, as shown in FIGS. 3 and 4, the window member 22 includes a metal plate 221 and a dielectric plate 222 provided in order from the processing chamber 1 side toward the antenna 3 side. and The metal plate 221 is formed with a slit 221s penetrating in its thickness direction, and is provided so as to close the opening 211 of the container body 21 . The dielectric plate 222 is supported in contact with the metal plate 221, and is provided on the surface of the metal plate 221 on the antenna 3 side so as to close the slit 221s from the outside of the processing chamber 1 (that is, from the antenna 3 side). . In the plasma processing apparatus 100 of this embodiment, the magnetic field transmission window 5 is formed by the slit 221s of the metal plate 221 and the dielectric plate 222 closing the slit 221s. That is, the high-frequency magnetic field generated by the antenna 3 is supplied to the processing chamber 1 through the dielectric plate 222 and the slit 221s. The vacuum in the processing chamber 1 is maintained by the metal plate 221 closing the opening 211 and the dielectric plate 222 closing the slit 221s of the metal plate 221 . In the following description, the thickness direction of the metal plate 221 is simply referred to as "thickness direction".

The metal plate 221 transmits the high-frequency magnetic field generated by the antenna 3 into the processing chamber 1 and prevents an electric field from entering the processing chamber 1 from outside. Specifically, a metal material is rolled (for example, cold rolled or hot rolled) to form a flat plate. Although the thickness of the metal plate 221 is set to about 5 mm here, the thickness is not limited to this and may be appropriately changed according to the specifications. The thickness of the metal plate 221 may be any thickness that can withstand the differential pressure between the internal and external pressures of the processing chamber 1 during vacuum processing, and is preferably 1 mm or more.

As shown in FIGS. 3 and 5, the metal plate 221 has a shape (here, a rectangular shape) capable of covering the entire opening 211 of the container body 21 in plan view. The area surrounded by the outer periphery of the metal plate 221 is larger than the area of the opening 211 of the container body 21 . The metal plate 221 is provided so as to surround the periphery of the opening 211 of the container body 21 on the side of the antenna 3 so as to contact and be supported by the container body 21 . The metal plate 221 is arranged substantially parallel to the surface of the substrate W arranged in the processing chamber 1 . The metal plate 221 and the container body 21 are vacuum-sealed by interposing a seal structure (not shown) therebetween. Here, the sealing structure is realized by a sealing member such as an O-ring or a gasket, or an adhesive provided between the metal plate 221 and the container body 21 . These sealing members are provided so as to surround the outer periphery of the opening 211 .

In this embodiment, the metal plate 221 is in electrical contact with the container body 21 and is grounded through the container body 21 . Not limited to this, the metal plate 221 may be directly grounded.

The material forming the metal plate 221 is, for example, one kind of metal selected from the group including Cu, Al, Zn, Ni, Sn, Si, Ti, Fe, Cr, Nb, C, Mo, W or Co, or one of them. may be an alloy (for example, a stainless alloy, an aluminum alloy, etc.). It may also contain a trace amount of elements (inevitable impurities) mixed in depending on the conditions of raw materials, materials, manufacturing equipment, and the like. From the viewpoint of improving corrosion resistance and heat resistance, the surface of the metal plate 221 on the processing chamber 1 side may be coated.

As shown in FIG. 5, the slit 221s has a rectangular shape whose longitudinal direction is perpendicular to the antenna 3 when viewed from the thickness direction, and is located between the antenna 3 and the processing chamber 1. It is formed directly below the antenna 3 . The slits 221 s are formed at positions corresponding to the respective antennas 3 . Specifically, a plurality of slits 221 s are formed at positions corresponding to one antenna 3 . More specifically, one or a plurality of slits 221s are formed at positions corresponding to the conductor elements 31 of the antenna 3 . In this embodiment, six slits 221 s are formed at positions corresponding to each conductor element 31 . The number of slits 221s is not limited to this and may be changed as appropriate according to specifications. Although each slit 221s has the same shape here, it may have a different shape. Each slit 221s may be arranged parallel to each other, or may be non-parallel.

The dielectric plate 222 transmits the high-frequency magnetic field generated from the antenna 3 into the processing chamber 1 and closes the slit 221 s to maintain the vacuum inside the processing chamber 1 . Specifically, the dielectric plate 222 has a flat plate shape whose entirety is made of a dielectric material. Although the plate thickness of the dielectric plate 222 is made smaller than the plate thickness of the metal plate 221 here, it is not limited to this. From the viewpoint of shortening the distance between the antenna 3 and the processing chamber 1, the thinner one is preferable. The thickness of the dielectric plate 222 is sufficient to withstand the differential pressure between the inside and outside of the processing chamber 1 through the slits 221s when the processing chamber 1 is evacuated. It may be appropriately set according to specifications such as the material of the plate 222 .

The dielectric plate 222 is provided on the surface of the metal plate 221 on the antenna 3 side so as to cover and block the plurality of slits 221s formed in the metal plate 221 . Specifically, the dielectric plate 222 is in contact with the antenna 3 side surface of the metal plate 221 so as to surround and adhere to the plurality of slits 221s. Dielectric plate 222 and metal plate 221 are vacuum-sealed by interposing a seal structure (not shown) therebetween. Here, the sealing structure is realized by a sealing member such as an O-ring or a gasket, or an adhesive provided between the dielectric plate 222 and the metal plate 221 . These sealing members may be provided so as to surround all of the plurality of slits 221s at once, or may be provided so as to individually surround the plurality of slits 221s. Moreover, when the dielectric plate 222 is made of a material having high elasticity such as a resin material, the sealing structure may be realized by the elastic force of the dielectric plate 222 .

Here, the dielectric plate 222 of this embodiment has a laminated structure in which an inorganic layer 222a made of an inorganic material and an organic layer 222b made of an organic material are laminated, as shown in FIG. is configured to form In this specification, "composed of an inorganic material" means containing an inorganic material as a main component (more than 50%), and does not exclude the inclusion of materials other than inorganic materials. "Consisting of an organic material" has the same meaning.

The inorganic layer 222a has a plate-like shape, and preferably has a thickness sufficient to withstand the pressure difference between the inside and outside of the processing chamber 1 through the slits 221s when the processing chamber 1 is evacuated. For example, about 0.7 mm to about 14.5 mm is preferable, but the present invention is not limited to this. From the viewpoint of efficiently supplying a high-frequency magnetic field to the processing chamber 1, the thinner the thickness, the better. The inorganic material forming the inorganic layer 222a is preferably a material that can transmit a high-frequency magnetic field and exhibit a higher pressure resistance than the organic layer 222b. Specifically, the inorganic material is preferably at least one selected from alkali-free glass, quartz glass, and ceramics.

The organic layer 222b has a sheet shape, and the thinner the thickness, the better. Specifically, the thickness of the organic layer 222b is preferably about 0.5 mm to about 2.0 mm. The organic material that constitutes the organic layer 222b is preferably a material that can transmit a high-frequency magnetic field and exhibit flexibility superior to that of the inorganic layer 222a. Specifically, the organic material is preferably at least one selected from polytetrafluoroethylene (Teflon) and polyimide.

In the dielectric plate 222, the inorganic layer 222a and the organic layer 222b are laminated in this order from the processing chamber 1 toward the antenna 3. As shown in FIG. The organic layer 222b is laminated on the inorganic layer 222a so as to be positioned at least above each slit 221s when viewed from the antenna 3 side. Here, the organic layer 222b is laminated over the entire upper surface of the inorganic layer 222a.

The inorganic layer 222a and the organic layer 222b are bonded to each other at their interfaces. Lamination bonding between the inorganic layer 222a and the organic layer 222b may be performed by any bonding method. It is preferable that they are directly joined without interposing a member.

The window member 22 further includes a holding frame 223 that holds the metal plate 221 and the dielectric plate 222 . The holding frame 223 presses and holds the metal plate 221 and the dielectric plate 222 against the upper surface 21 b of the container body 21 . As shown in FIGS. 3 and 5, the holding frame 223 has a flat plate shape and is arranged on the dielectric plate 222 so as to be substantially parallel to the surface of the substrate W provided in the processing chamber 1 . there is Specifically, the holding frame 223 is arranged so that its lower surface contacts the upper surfaces of the dielectric plate 222 and the metal plate 221 . The holding frame 223 is detachably attached to the upper surface 21b of the container body 21 by a fixing member (not shown) such as a screw mechanism.

The material forming the holding frame 223 is, for example, one metal selected from the group including Cu, Al, Zn, Ni, Sn, Si, Ti, Fe, Cr, Nb, C, Mo, W or Co, or An alloy or the like thereof may be used. Moreover, from the viewpoint of reducing the induced current flowing inside, it is preferable that the holding frame 223 is made of a dielectric material. Examples of such dielectric materials include ceramics such as alumina, silicon carbide, and silicon nitride, inorganic materials such as quartz glass and alkali-free glass, and resin materials such as fluororesin (eg, Teflon). Also, fixing members such as bolts for fixing the holding frame 223 are preferably made of a dielectric material such as ceramic, like the holding frame 223 .

A plurality of elongated openings 223' are formed through the holding frame 223 in the thickness direction, and the dielectric plate 222 is exposed from the openings 223'. As shown in FIG. 5, the opening 223? is formed at a position corresponding to each antenna 3 (specifically, each conductor element 31). More specifically, the opening 223? is formed so as to surround each antenna 3 and the magnetic field transmission window 5 at the position corresponding thereto when viewed from the thickness direction. Here, nine openings 223? are formed so as to correspond to three antennas 3 (that is, nine conductor elements 31).

<Effects of this embodiment>
According to the plasma processing apparatus 100 of the present embodiment configured as described above, part of the window member 22 forming the magnetic field transmission window 5 is made of a metal material having higher toughness than a dielectric material such as ceramics. Therefore, the thickness of the magnetic field permeable window 5 can be reduced as compared with the case where the magnetic field permeable window 5 is composed only of a dielectric material. Thereby, the distance from the antenna 3 to the processing chamber 1 can be shortened, and the high-frequency magnetic field generated from the antenna 3 can be efficiently supplied into the processing chamber 1 .

In addition, since the dielectric plate 222 is formed by stacking the inorganic layer 222a made of an inorganic material having excellent magnetic field permeability and the organic layer 222b made of an organic material having a higher flexibility than the inorganic layer 222a, the dielectric While the thickness of the plate 222 itself is reduced, it is possible to prevent rapid breakage of the dielectric plate 222 due to the differential pressure between the inside and outside of the processing chamber 1 during vacuum processing. Here, since the plate-like inorganic layer 222a and the sheet-like organic layer 222b are laminated in order from the processing chamber 1 side toward the antenna 3 side, even if the inorganic layer 222a is cracked or otherwise damaged, Also, the damaged portion can be closed and sealed by the organic layer 222b. As a result, even if the inorganic layer 222a is cracked, sudden pressure fluctuations in the processing chamber 1 due to vacuum leakage can be prevented, and damage to the vacuum pump and the like can be prevented, thereby minimizing the damage. can be done.

Furthermore, since the metal plate 221 is provided so as to block the opening 211 of the container body 21, all the members surrounding the processing chamber 1, which is the plasma generation space, can be electrically grounded. As a result, the influence of the voltage of the antenna 3 on the plasma can be reduced, and the electron temperature and ion energy can be reduced.

<Other Modified Embodiments>
It should be noted that the present invention is not limited to the above embodiments.

In the above-described embodiment, the inorganic layer 222a and the organic layer 222b are laminated in this order from the processing chamber 1 toward the antenna 3, but the present invention is not limited to this. In another embodiment, as shown in FIG. 6, an organic layer 222b and an inorganic layer 222a may be laminated in order from the processing chamber 1 toward the antenna 3. FIG.

In the above-described embodiment, the dielectric plate 222 has a two-layer structure in which one inorganic layer 222a and one organic layer 222b are laminated. good. For example, as shown in FIG. 7, one inorganic layer 222a may be arranged between two organic layers 222b.

In another embodiment, the inorganic layer 222a may include a linear reinforcing member such as a metallic wire inside. In this way, even if the inorganic layer is damaged such as cracking due to excessive evacuation, it is possible to more effectively prevent the fragments from scattering. In this case, the reinforcing member is preferably provided so as to intersect the antenna 3 when viewed from the antenna 3 side. . By doing so, the reverse current flowing in the direction along the antenna 3 in the reinforcing member can be reduced, and the heat generation and the deterioration of the permeability of the high-frequency magnetic field can be reduced.

In the above-described embodiment, the dielectric plate 222 has a laminated structure in which the inorganic layer 222a and the organic layer 222b are laminated, but the structure is not limited to this. As shown in FIG. 8, the dielectric plate 222 of another embodiment may have a single-layer structure composed of a fiber-reinforced layer made of a fiber-reinforced material in which inorganic fibers are impregnated with an organic material. In this case, the dielectric plate 222 is preferably made of a fiber-reinforced material in which glass fibers are impregnated with polyimide.

The dielectric plate 222 may have a multi-layer structure in which a fiber-reinforced layer made of the above-described fiber-reinforced composite material and an inorganic layer made of an inorganic material (alkali-free glass, quartz glass, ceramics, etc.) are laminated. good. In this case, it is preferable that the fiber reinforced layer has a sheet shape, the inorganic layer has a plate shape, and the inorganic layer and the fiber reinforced layer are laminated in this order from the processing chamber 1 toward the antenna 3. .

Although the window member 22 is attached to the upper surface 21b of the container body 21 in the above embodiment, the present invention is not limited to this. In other embodiments, it may be attached to a flange or the like provided on the upper surface of the container body 21 .

In the above-described embodiment, a plurality of openings 223' of the holding frame 223 are formed at positions corresponding to the respective conductor elements 31, but the present invention is not limited to this. In another embodiment, one opening may be formed so as to surround all the conductor elements 31 when viewed from the thickness direction.

Although the plasma processing apparatus 100 of the above embodiment has a plurality of antennas 3, the present invention is not limited to this and only one antenna 3 may be provided.

In the plasma processing apparatus 100 of the above embodiment, the antenna 3 comprises a plurality of conductor elements 31 and a capacitor 32 which is a quantitative element electrically connected in series with the conductor elements 31 adjacent to each other. is not limited to In other embodiments, the antenna 3 may comprise only one conductor element 31 and no capacitor 32 .

Although the antenna 3 is a linear conductor in the above embodiment, it is not limited to this, and may be a spiral conductor or a dome-shaped coil.

In addition, the present invention is not limited to the above-described embodiments, and it goes without saying that various modifications are possible without departing from the spirit of the present invention.

DESCRIPTION OF SYMBOLS 100...Plasma processing apparatus 1...Processing chamber 21...Container body 211...Opening 221...Metal plate 221s...Slit 222...Dielectric plate 222a...Inorganic layer 222b. .. Organic layer 3 .. Antenna 4 .. High-frequency power source 5 .. Magnetic field transmission window

Claims (7)

A plasma processing apparatus that vacuum-processes an object to be processed placed in a processing chamber using plasma,
a container body having an opening in a wall forming the processing chamber;
a metal plate provided to block the opening and having a slit penetrating in the thickness direction;
a dielectric plate supported in contact with the metal plate and blocking the slit from the outside of the processing chamber;
an antenna provided outside the processing chamber so as to face the metal plate and connected to a high frequency power supply to generate a high frequency magnetic field;
with
The dielectric plate
(i) A plasma treatment apparatus comprising a laminate of an inorganic layer made of an inorganic material and an organic layer made of an organic material, or (ii) including a fiber-reinforced material in which inorganic fibers are impregnated with an organic material. (i) the dielectric plate is a laminate of the inorganic layer and the organic layer;
The inorganic layer has a plate shape,
2. A plasma processing apparatus according to claim 1, wherein said organic layer is in the form of a sheet. (i) the dielectric plate is a laminate of the inorganic layer and the organic layer;
3. The plasma processing apparatus according to claim 1, wherein said inorganic layer and said organic layer are laminated in this order from said processing chamber toward said antenna. (i) the dielectric plate is a laminate of the inorganic layer and the organic layer;
4. The plasma processing apparatus according to claim 1, wherein said inorganic layer and said organic layer are bonded to each other. (i) the dielectric plate is a laminate of the inorganic layer and the organic layer;
the inorganic material is one selected from alkali-free glass, quartz glass, and ceramics;
5. The plasma processing apparatus according to any one of claims 1 to 4, wherein said organic material is one selected from polytetrafluoroethylene and polyimide. wherein the dielectric plate (ii) comprises the fiber reinforced material;
2. The plasma processing apparatus according to claim 1, wherein said inorganic fiber is glass fiber and said organic material is polyimide. (ii) the dielectric plate includes the fiber reinforced material;
7. The plasma processing apparatus according to claim 1, wherein the fiber reinforced layer made of the fiber reinforced material and the inorganic layer made of the inorganic material are laminated.

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