JP2024080184A - Plasma processing apparatus - Google Patents

Abstract

To make the plasma generated inside the vacuum vessel uniform.SOLUTION: A plasma processing apparatus (100) includes an energized antenna (2) provided outside a vacuum vessel (1) and generating a magnetic field when a high-frequency current is introduced therein, a dielectric plate (7) that keeps the interior of the vacuum vessel (1) airtight, and an inductive antenna (8) provided inside the vacuum vessel (1) so as to extend in the same direction as the energized antenna (2) and has both ends grounded.SELECTED DRAWING: Figure 1

Description

The present invention relates to a plasma processing device.

Patent Document 1 discloses a plasma processing apparatus that includes a vacuum vessel that houses a substrate, a long antenna for generating plasma inside the vacuum vessel, and a high-frequency power supply that supplies high-frequency current to the antenna. In the plasma processing apparatus disclosed in Patent Document 1, the antenna is disposed above the substrate inside the vacuum vessel.

JP 2019-153560 A

In the plasma processing apparatus disclosed in Patent Document 1, when the high-frequency power supply supplies high-frequency current to the antenna, a potential difference occurs according to the impedance of the antenna, which causes a problem that the plasma generated inside the vacuum vessel is not uniform. One aspect of the present invention aims to make the plasma generated inside the vacuum vessel uniform.

In order to solve the above problems, a plasma processing apparatus according to one aspect of the present invention includes a vacuum vessel, an energized antenna provided outside the vacuum vessel for generating plasma inside the vacuum vessel by introducing a high-frequency current to generate a magnetic field, a dielectric plate for keeping the inside of the vacuum vessel airtight by blocking the movement of gas at an opening formed in the vacuum vessel facing the energized antenna, and an induction antenna provided inside the vacuum vessel so as to extend in the same direction as the energized antenna and with both ends grounded.

According to one aspect of the present invention, the plasma generated inside the vacuum vessel can be made uniform.

1 is a cross-sectional view showing an example of a configuration of a plasma processing apparatus according to a first embodiment of the present invention. 2 is a diagram showing an example of an equivalent circuit of a current-carrying antenna and an inductive antenna included in the plasma processing apparatus shown in FIG. 1, and a potential distribution of the inductive antenna; FIG. 11 is a cross-sectional view showing an example of a configuration of a plasma processing apparatus according to a second embodiment of the present invention. 4 is a cross-sectional view taken along the line A1-A1 in FIG. 3, showing a magnetic field distribution when a current is passed through a current-carrying antenna provided in the plasma processing apparatus. FIG. 5 is a diagram showing magnetic field lines when a current is passed through a current-carrying antenna in the magnetic field distribution diagram shown in FIG. 4 . 4 is a cross-sectional view showing the vicinity of an energized antenna and an inductive antenna in a first modification of the plasma processing apparatus shown in FIG. 3. FIG. 4 is a cross-sectional view showing the vicinity of an energized antenna and an inductive antenna in a second modification of the plasma processing apparatus shown in FIG. 3. FIG.

[Embodiment 1]
<Configuration of Plasma Processing Apparatus 100>
1 is a cross-sectional view showing an example of the configuration of a plasma processing apparatus 100 according to a first embodiment of the present invention. The plasma processing apparatus 100 processes the surface of a substrate W1 using an inductively coupled plasma P1. The substrate W1 is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic electroluminescence display, or a flexible substrate for a flexible display. The processing performed on the substrate W1 is, for example, film formation by a plasma CVD (Chemical Vapor Deposition) method or a sputtering method, etching by plasma, ashing, or removal of a coating film.

As shown in FIG. 1, the plasma processing apparatus 100 includes a vacuum vessel 1, a power-carrying antenna 2, a high-frequency power supply 3, a matching circuit 31, a vacuum exhaust device 4, a substrate holder 5, and a heater 51. The plasma processing apparatus 100 also includes a bias power supply 6, a dielectric plate 7, an induction antenna 8, a protective tube 9, and a cooling mechanism 10.

<Configuration of Vacuum Vessel 1>
The vacuum vessel 1 is, for example, a vessel made of metal, and an opening OP is formed in an upper wall 1A of the vacuum vessel 1. The opening OP is formed in a position on the upper wall 1A facing the energized antenna 2. The vacuum vessel 1 is electrically grounded by being connected to a ground G1. The interior of the vacuum vessel 1 is evacuated to a vacuum by a vacuum exhaust device 4. A gas GS is introduced into the vacuum vessel 1, for example, via a flow regulator (not shown) or at least one gas inlet 1B formed in the vacuum vessel 1.

The gas GS may be selected according to the processing contents to be performed on the substrate W1. For example, when a film is formed on the substrate W1 by plasma CVD, the gas GS is a source gas or a gas obtained by diluting the source gas with a dilution gas (e.g., _H2 ). When the source gas is _SiH4 , a Si film can be formed on the substrate W1. When the source gas is _SiH4 + _NH3 , a SiN film can be formed. When the source gas is _SiH4 + _O2 , a _SiO2 film can be formed. When the source gas is _SiF4 + _N2 , a SiN:F film (fluorinated silicon nitride film) can be formed.

<Configuration of Substrate Holder 5>
A substrate holder 5 for holding the substrate W1 is provided inside the vacuum vessel 1. A bias voltage may be applied to the substrate holder 5 from a bias power supply 6. The bias voltage may be, for example, a negative DC voltage or a negative bias voltage, but is not limited thereto. By using such a bias voltage, for example, it is possible to control the energy of positive ions in the plasma P1 when they are incident on the substrate W1, thereby controlling the crystallinity of a film formed on the surface of the substrate W1. A heater 51 for heating the substrate W1 may be provided inside the substrate holder 5. The bias power supply 6 is connected to a ground G4.

<Configuration of energized antenna 2>
The energized antenna 2 is provided outside the vacuum vessel 1 and is disposed at a position facing the opening OP. The energized antenna 2 is adapted to generate a magnetic field when a high-frequency current I1 is introduced therein, thereby generating a plasma P1 inside the vacuum vessel 1. The energized antenna 2 is shaped like a rod or a cylinder. The number of energized antennas 2 is not limited to one, and may be multiple.

The power supply end 2A, which is one end of the energized antenna 2, is connected to the high frequency power source 3 via a matching circuit 31. The other end of the energized antenna 2, the terminal end 2B, is electrically grounded by being connected to the ground G3. The terminal end 2B may also be connected to the ground G3 via a capacitor, a coil, or the like.

<Configuration of high frequency power source 3>
The high frequency power supply 3 can pass a high frequency current I1 through the energized antenna 2 via a matching circuit 31. The frequency of the high frequency is, for example, a typical 13.56 MHz, but is not limited thereto and may be changed as appropriate. The high frequency power supply 3 is connected to a ground G2. When the high frequency current I1 is introduced into the energized antenna 2 by the high frequency power supply 3, a magnetic field is generated around the energized antenna 2.

<Configuration of Dielectric Plate 7>
The dielectric plate 7 is provided on the upper wall 1A so as to close the opening OP from the outside of the vacuum vessel 1. The dielectric plate 7 is a flat plate made entirely of a dielectric material, and is made of, for example, ceramics such as alumina, silicon carbide, or silicon nitride, inorganic materials such as quartz glass, or non-alkali glass, or resin materials such as fluororesin.

The dielectric plate 7 keeps the inside of the vacuum vessel 1 airtight by blocking the movement of gas at the opening OP. The dielectric plate 7 allows the magnetic field generated around the energized antenna 2 to pass into the inside of the vacuum vessel 1. As a result, a magnetic field is formed inside the vacuum vessel 1, generating an induced electric field, and the gas GS is ionized by the induced electric field to generate plasma P1. The dielectric plate 7 may be provided on the inner wall of the vacuum vessel 1 so as to block the opening OP from the inside of the vacuum vessel 1.

<Configuration of induction antenna 8>
The inductive antenna 8 is provided inside the vacuum vessel 1 so as to extend in the same direction as the energized antenna 2. The inductive antenna 8 is disposed in a position facing the dielectric plate 7. The shape of the inductive antenna 8 is rod-like or cylindrical. The number of inductive antennas 8 is not limited to one, and may be multiple. The distance between the inductive antenna 8 and the energized antenna 2 is, for example, about 5 cm. The inductive antenna 8 is not energized.

Both ends of the induction antenna 8, i.e., one end 8A and the other end 8B, are connected to the inner wall of the vacuum vessel 1, which is electrically grounded. By connecting one end 8A and the other end 8B to the grounded vacuum vessel 1, one end 8A and the other end 8B are electrically grounded. An induced current flows in each part of the induction antenna 8 due to the magnetic field formed inside the vacuum vessel 1. This increases the magnetic field strength and induced electric field strength between the energized antenna 2 and the induction antenna 8.

<Configuration of protective tube 9>
The protective tube 9 is provided to cover the periphery of the induction antenna 8 and protects the induction antenna 8 from the plasma P1 generated inside the vacuum vessel 1. The protective tube 9 is made of an insulating material. The protective tube 9 protects the induction antenna 8 from the plasma P1 generated inside the vacuum vessel 1, thereby reducing wear of the induction antenna 8 caused by the plasma P1. Both ends of the protective tube 9 are connected to the inner wall of the vacuum vessel 1.

<Configuration of Cooling Mechanism 10>
The cooling mechanism 10 includes a temperature adjustment mechanism 11, a circulation mechanism 12, and a circulation flow path 13. The temperature adjustment mechanism 11 is a heat exchanger or the like for adjusting the temperature of the cooling liquid circulating through the circulation flow path 13 to a constant temperature. The circulation mechanism 12 is a pump or the like for circulating the cooling liquid through the circulation flow path 13. The circulation flow path 13 is provided inside the energized antenna 2, and is provided inside the induction antenna 8, penetrating the vacuum vessel 1.

The circulation flow path 13 guides the Joule heat generated in the energized antenna 2 to the outside of the energized antenna 2, and guides the Joule heat generated in the inductive antenna 8 to the outside of the inductive antenna 8. Therefore, the energized antenna 2 and the inductive antenna 8 whose temperatures have risen due to the generation of Joule heat can be cooled by the cooling mechanism 10. Therefore, it is possible to prevent the temperatures of the energized antenna 2 and the inductive antenna 8 from rising excessively.

Joule heat is generated in the energized antenna 2 when a high-frequency current I1 is applied to the energized antenna 2. Joule heat is generated in the inductive antenna 8 when an induced current flows through the inductive antenna 8. From the viewpoint of electrical insulation, the cooling liquid flowing through the circulation flow path 13 is preferably high-resistance water, for example, pure water or water close to pure water. The cooling liquid may also be a liquid refrigerant other than water, such as a fluorine-based inert liquid.

<Electromotive Force and Voltage Drop Generated in Induction Antenna 8>
Fig. 2 is a diagram showing an example of an equivalent circuit of the energized antenna 2 and the inductive antenna 8 included in the plasma processing apparatus 100 shown in Fig. 1, and a potential distribution of the inductive antenna 8. As shown in Fig. 2, the energized antenna 2 has an inductance component L2 and an impedance component R2 in each infinitesimal region in the direction in which the energized antenna 2 extends. The inductance component L2 is the inductance per infinitesimal length of the energized antenna 2. The impedance component R2 is the impedance per infinitesimal length of the energized antenna 2.

Furthermore, the inductive antenna 8 has an inductance component L8 and an impedance component R8 in each infinitesimal region in the direction in which the inductive antenna 8 extends. The inductance component L8 is the inductance per infinitesimal length of the inductive antenna 8. The impedance component R8 is the impedance per infinitesimal length of the inductive antenna 8.

With regard to the potential distribution of the inductive antenna 8 shown below the equivalent circuit of the energized antenna 2 and the inductive antenna 8, position X1 on the horizontal axis indicates the position in the extension direction of the inductive antenna 8, and potential V1 on the vertical axis indicates the potential relative to position X1 of the inductive antenna 8.

The inductance component L8 generates an electromotive force between positions SP1 and SP2 in the inductive antenna 8, and an electromotive force between positions SP4 and SP5 in the inductive antenna 8. The impedance component R8 generates a voltage drop between positions SP2 and SP3 in the inductive antenna 8, and a voltage drop between positions SP5 and SP6 in the inductive antenna 8.

Since both ends of the inductive antenna 8 are grounded, the magnitude of the electromotive force and voltage drop generated in the inductive antenna 8 in each infinitesimal region in the direction in which the inductive antenna 8 extends is both V2. Therefore, in each infinitesimal region in the direction in which the inductive antenna 8 extends, the electromotive force due to the inductance of the inductive antenna 8 and the voltage drop due to the impedance of the inductive antenna 8 are the same. This makes it possible to make the overall potential difference of the inductive antenna 8 almost zero.

As described above, in the plasma processing apparatus 100, the energized antenna 2 is provided outside the vacuum vessel 1, and the inductive antenna 8 is provided inside the vacuum vessel 1. As a result, an induced electric field is generated inside the vacuum vessel 1 by introducing a high-frequency current I1 into the energized antenna 2, and an induced current flows in the inductive antenna 8 due to the induced electric field generated inside the vacuum vessel 1.

In addition, because both ends of the induction antenna 8 are grounded, in a small area in the direction in which the induction antenna 8 extends, the electromotive force generated in the induction antenna 8 by the induced electric field matches the voltage drop due to the impedance of the induction antenna 8. This allows the entire induction antenna 8 to be grounded.

By passing an induced current through the induction antenna 8 by the induced electric field generated by the magnetic field and grounding the entire induction antenna 8, the plasma P1 generated inside the vacuum vessel 1 can be made uniform. Furthermore, the potential of the induction antenna 8 is unrelated to the impedance of the energized antenna 2. Therefore, there is no need to incorporate a capacitive reactance or the like into the energized antenna 2 in order to reduce the impedance of the energized antenna 2, and the structure of the energized antenna 2 can be simplified.

[Embodiment 2]
A second embodiment of the present invention will be described below. For convenience of explanation, the same reference numerals are given to members having the same functions as those described in the first embodiment, and the description thereof will not be repeated. Fig. 3 is a cross-sectional view showing an example of the configuration of a plasma processing apparatus 101 according to the second embodiment of the present invention.

<Configuration of Plasma Processing Apparatus 101>
The plasma processing apparatus 101 differs from the plasma processing apparatus 100 in that it includes a conductive plate 14 and in the position of the dielectric plate 7. The conductive plate 14 is provided on the upper wall 1A of the vacuum vessel 1 so as to close the opening OP from the outside of the vacuum vessel 1. The conductive plate 14 is larger than the opening OP when viewed from the direction from the energized antenna 2 toward the vacuum vessel 1.

The conductive plate 14 has a number of slits 141 formed therein, which penetrate the conductive plate 14 in the thickness direction. The thickness direction of the conductive plate 14 is the direction from the energized antenna 2 toward the inductive antenna 8. The slits 141 are formed to be parallel to each other. The magnetic field generated by the energized antenna 2 is introduced into the vacuum vessel 1 through the dielectric plate 7 and the slits 141. The conductive plate 14 is electrically grounded by being provided in the vacuum vessel 1, which is grounded.

The conductor plate 14 is electrically grounded, so that it allows the magnetic field generated from the energized antenna 2 to pass into the inside of the vacuum vessel 1, and blocks the electric field that is generated due to the potential of the energized antenna 2 when high frequency current I1 is introduced into the energized antenna 2. The shape of the conductor plate 14 is flat. It is preferable that the mechanical strength of the conductor plate 14 is higher than the mechanical strength of the dielectric plate 7, and it is preferable that the thickness of the conductor plate 14 is greater than the thickness of the dielectric plate 7.

The conductive plate 14 is made of a metal material such as one metal selected from the group including Cu, Al, Zn, Ni, Sn, Si, Ti, Fe, Cr, Nb, C, Mo, W, or Co, or an alloy thereof (such as a stainless steel alloy or an aluminum alloy). A sealing member such as an O-ring or a gasket is interposed between the conductive plate 14 and the upper wall 1A, and a vacuum seal is formed between them.

The dielectric plate 7 is arranged to block the multiple slits 141 formed in the conductive plate 14 from the outside of the vacuum vessel 1, thereby blocking the movement of gas through the multiple slits 141, that is, blocking the movement of gas through the opening OP. In this way, the dielectric plate 7 maintains the airtightness of the inside of the vacuum vessel 1.

Since the conductive plate 14 is provided in the vacuum vessel 1 so as to cover the opening OP, when a high-frequency current I1 is introduced into the energized antenna 2, the electric field generated due to the potential of the energized antenna 2 can be blocked by the conductive plate 14. This makes it possible to suppress the effect of the potential difference of the energized antenna 2 on the plasma P1, and to make the plasma P1 generated inside the vacuum vessel 1 more uniform.

In addition, the structure in which the dielectric plate 7 covers the slit 141 formed in the conductive plate 14 allows the magnetic field generated by the energized antenna 2 to be introduced into the vacuum vessel 1 while maintaining the airtightness of the inside of the vacuum vessel 1.

Here, the thickness of the dielectric plate 7 is set to be smaller than the thickness of the conductor plate 14, but this is not limited to this. For example, when the vacuum vessel 1 is evacuated, the dielectric plate 7 only needs to have the strength to withstand the pressure difference between the inside and outside of the vacuum vessel 1 received through the slits 141, and the thickness of the dielectric plate 7 may be set appropriately according to the specifications such as the number or length of the slits 141. However, from the viewpoint of shortening the distance between the energized antenna 2 and the vacuum vessel 1, it is preferable that the thickness of the dielectric plate 7 is thin.

The dielectric plate 7 and the conductor plate 14 function as a magnetic field transmission window that allows the magnetic field to pass through. In other words, the magnetic field generated from the energized antenna 2 passes through the magnetic field transmission window consisting of the dielectric plate 7 and the conductor plate 14 and is formed inside the vacuum vessel 1. As a result, an induced electric field is generated in the space inside the vacuum vessel 1, and an inductively coupled plasma P1 is generated.

The conductive plate 14 may be provided on the inner wall of the vacuum vessel 1 so as to cover the opening OP from inside the vacuum vessel 1. In this case, the dielectric plate 7 is provided so as to cover the multiple slits 141 from inside the vacuum vessel 1.

<Magnetic field distribution near the energized antenna 2 and the inductive antenna 8>
Fig. 4 is a cross-sectional view taken along the arrow A1-A1 in Fig. 3, showing a magnetic field distribution when current is applied to the energized antenna 2 included in the plasma processing apparatus 101. In Fig. 4, the upper side of the dielectric plate 7 is the outside of the vacuum vessel 1, and the lower side of the dielectric plate 7 is the inside of the vacuum vessel 1. As shown in Fig. 4, when a high-frequency current I1 flows through the energized antenna 2, an induced current I2 flows through the induction antenna 8 in a direction opposite to the direction in which the high-frequency current I1 flows.

The magnetic field strength in the space between the energized antenna 2 and the inductive antenna 8 is stronger than the magnetic field strength outside the space. In the space between the energized antenna 2 and the inductive antenna 8, the magnetic field strength is particularly strong near the energized antenna 2 and near the inductive antenna 8.

As shown in FIG. 4, when high-frequency current I1 flows through energized antenna 2, a magnetic field having sufficient magnetic field strength to generate plasma P1 is generated inside vacuum vessel 1. The diameter of energized antenna 2 may be larger than the diameter of inductive antenna 8. This reduces the impedance of energized antenna 2, making it easier for high-frequency current I1 to flow through energized antenna 2.

Figure 5 is a diagram showing magnetic field lines M1 when current is applied to the energized antenna 2 in the diagram showing the magnetic field distribution shown in Figure 4. When high-frequency current I1 flows through the energized antenna 2 and induced current I2 flows through the inductive antenna 8, the directions of magnetic field lines M1 in the energized antenna 2 and the inductive antenna 8 become the directions shown in Figure 4. Specifically, the direction of magnetic field lines M1 around the energized antenna 2 is clockwise relative to the energized antenna 2, and the direction of magnetic field lines M1 around the inductive antenna 8 is counterclockwise relative to the inductive antenna 8.

[Modification 1]
Fig. 6 is a cross-sectional view showing the vicinity of the energized antenna 2 and the inductive antenna 8 in Modification 1 of the plasma processing apparatus 101 shown in Fig. 3. As shown in Fig. 6, the plasma processing apparatus according to Modification 1 differs from the plasma processing apparatus 101 in that a plurality of energized antennas 2 and a plurality of inductive antennas 8 are arranged in one-to-one correspondence.

Each of the multiple energized antennas 2 is arranged to face the corresponding inductive antenna 8 via the dielectric plate 7 and the slits 141. The multiple slits 141 may be formed in the conductive plate 14 in one-to-one correspondence with the multiple energized antennas 2, or may be formed in the conductive plate 14 in one-to-one correspondence with the multiple inductive antennas 8.

[Modification 2]
Fig. 7 is a cross-sectional view showing the vicinity of the energized antenna 2 and the inductive antenna 8 in Modification 2 of the plasma processing apparatus 101 shown in Fig. 3. As shown in Fig. 7, the plasma processing apparatus according to Modification 2 is different from the plasma processing apparatus 101 in that a plurality of inductive antennas 8 are arranged in correspondence with one energized antenna 2, and that the conductor plate 14 is changed to a conductor plate 14A. In this way, the plurality of energized antennas 2 and the plurality of inductive antennas 8 do not have to be arranged in one-to-one correspondence.

The conductive plate 14A has a horizontal portion 142 and a protruding portion 143. The horizontal portion 142 extends horizontally and is provided on the upper wall 1A of the vacuum vessel 1. The protruding portion 143 is formed so as to protrude downward from the horizontal portion 142, and a recess 144 is formed on the outside of the vacuum vessel 1 at the protruding portion 143.

The energized antenna 2 is disposed in a position surrounded by the recess 144. A plurality of slits 141 are formed in the recess 144. The dielectric plate 7 is provided in the recess 144 so as to cover the plurality of slits 141 from the outside of the vacuum vessel 1. Each of the plurality of inductive antennas 8 is disposed so as to face one energized antenna 2 via the dielectric plate 7 and the slit 141. Note that the plurality of slits 141 and the plurality of inductive antennas 8 may be disposed in one-to-one correspondence.

〔summary〕
A plasma processing apparatus according to aspect 1 of the present invention comprises a vacuum vessel, a powered antenna provided outside the vacuum vessel for generating plasma inside the vacuum vessel by introducing a high-frequency current to generate a magnetic field, a dielectric plate for maintaining airtightness inside the vacuum vessel by blocking the movement of gas at an opening formed in the vacuum vessel facing the powered antenna, and an induction antenna provided inside the vacuum vessel so as to extend in the same direction as the powered antenna, with both ends grounded.

An energized antenna is provided outside the vacuum vessel, and an inductive antenna is provided inside the vacuum vessel. As a result, an induced electric field is generated inside the vacuum vessel when a high-frequency current is introduced into the energized antenna, and an induced current flows in the inductive antenna due to the induced electric field generated inside the vacuum vessel.

In addition, because both ends of the induction antenna are grounded, in a small area in the direction in which the induction antenna extends, the electromotive force generated in the induction antenna by the induced electric field matches the voltage drop due to the impedance of the induction antenna. This makes it possible to ground the entire induction antenna.

By passing an induced current through the induction antenna using the induced electric field generated by the magnetic field and grounding the entire induction antenna, the plasma generated inside the vacuum vessel can be made uniform.

In the plasma processing apparatus according to aspect 2 of the present invention, in the above aspect 1, both ends of the induction antenna may be connected to the vacuum vessel that is grounded. By connecting both ends of the induction antenna to the vacuum vessel that is grounded, both ends of the induction antenna are grounded.

The plasma processing apparatus according to aspect 3 of the present invention is the above aspect 1 or 2, and further includes a cooling mechanism provided inside the induction antenna, and the cooling mechanism may guide Joule heat generated in the induction antenna to the outside of the induction antenna. The induction antenna whose temperature has increased due to the generation of Joule heat can be cooled by the cooling mechanism.

The plasma processing apparatus according to aspect 4 of the present invention may further include a protective tube that is provided to cover the periphery of the induction antenna and protects the induction antenna from plasma generated inside the vacuum vessel in any of aspects 1 to 3 above. The protective tube protects the induction antenna from plasma generated inside the vacuum vessel, thereby reducing wear of the induction antenna caused by plasma.

The plasma processing apparatus according to aspect 5 of the present invention may further include a conductive plate provided in the vacuum vessel so as to cover the opening and having a slit penetrating in the thickness direction, and the dielectric plate may be provided so as to cover the slit formed in the conductive plate from the outside of the vacuum vessel, thereby maintaining airtightness inside the vacuum vessel.

Since the conductive plate is provided in the vacuum vessel so as to cover the opening, when a high-frequency current is introduced into the energized antenna, the electric field generated due to the potential of the energized antenna can be blocked by the conductive plate. This makes it possible to suppress the effect on the plasma due to the potential difference of the energized antenna, and to make the plasma generated inside the vacuum vessel more uniform. In addition, the structure in which the dielectric plate covers the slits formed in the conductive plate makes it possible to introduce the magnetic field generated from the energized antenna into the interior of the vacuum vessel while maintaining the airtightness of the interior of the vacuum vessel.

The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. The technical scope of the present invention also includes embodiments obtained by appropriately combining the technical means disclosed in different embodiments.

REFERENCE SIGNS LIST 1 vacuum vessel 2 current-carrying antenna 7 dielectric plate 8 induction antenna 9 protective tube 10 cooling mechanism 14 conductive plate 100, 101 plasma processing apparatus 141 slit I1 high-frequency current OP opening P1 plasma

Claims (5)

A vacuum vessel;
a current-carrying antenna provided outside the vacuum vessel, for generating a magnetic field by introducing a high-frequency current thereto to generate plasma inside the vacuum vessel;
a dielectric plate that keeps the inside of the vacuum vessel airtight by blocking the movement of gas through an opening formed in the vacuum vessel at a position facing the energized antenna;
a first inductive antenna disposed inside the vacuum vessel and extending in the same direction as the first energized antenna, the first inductive antenna having both ends grounded; The plasma processing apparatus according to claim 1, characterized in that both ends of the induction antenna are connected to the vacuum vessel, which is grounded. The induction antenna further includes a cooling mechanism provided inside the induction antenna.
3. The plasma processing apparatus according to claim 1, wherein the cooling mechanism guides Joule heat generated in the induction antenna to an outside of the induction antenna. The plasma processing apparatus according to claim 1 or 2, further comprising a protective tube that is provided to cover the periphery of the induction antenna and protects the induction antenna from plasma generated inside the vacuum vessel. a conductive plate provided in the vacuum vessel so as to close the opening and having a slit penetrating therethrough in a thickness direction;
3. The plasma processing apparatus according to claim 1, wherein the dielectric plate is provided so as to close the slit formed in the conductive plate from outside the vacuum vessel, thereby keeping the inside of the vacuum vessel airtight.

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