JP6857035B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6857035B2 JP6857035B2 JP2017003331A JP2017003331A JP6857035B2 JP 6857035 B2 JP6857035 B2 JP 6857035B2 JP 2017003331 A JP2017003331 A JP 2017003331A JP 2017003331 A JP2017003331 A JP 2017003331A JP 6857035 B2 JP6857035 B2 JP 6857035B2
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- 239000004065 semiconductor Substances 0.000 title claims description 133
- 239000000463 material Substances 0.000 claims description 38
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- 239000011347 resin Substances 0.000 claims description 36
- 238000007747 plating Methods 0.000 claims description 20
- 235000014676 Phragmites communis Nutrition 0.000 claims description 16
- 229910000679 solder Inorganic materials 0.000 claims description 4
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- 239000007788 liquid Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000003892 spreading Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 244000273256 Phragmites communis Species 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
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Description
1 :第1リード
2 :第2リード
3 :第3リード
4 :半導体素子
5 :接合材
7 :樹脂パッケージ
11 :第1主面
12 :第1裏面
13 :アイランド部
14 :延出部
15 :第1溝
16 :凹部
18 :薄肉部
19 :めっき層
21 :第2主面
22 :第2裏面
23 :第2ワイヤボンディングパッド
24 :第2端子部
25 :第2段差部
31 :第3主面
32 :第3裏面
33 :第3ワイヤボンディングパッド
34 :第3端子部
35 :第3段差部
41,42:主面電極
43 :裏面電極
61,62:ワイヤ
81 :金型
151 :第1内側面
152 :第2内側面
153 :第1曲面
154 :第2曲面
155 :底面
171 :第1段差部
172 :突出部
D1,D2,D3,D4:寸法
α1,α2:角度
Claims (26)
- 半導体素子と、
前記半導体素子が配置された第1主面および当該第1主面とは反対側を向く第1裏面を有する第1リードと、
前記半導体素子と前記第1主面とを接合する接合材と、
前記半導体素子と前記第1リードの少なくとも一部とを覆う樹脂パッケージと、を備える半導体装置であって、
前記第1リードは、厚さ方向視において前記半導体素子から離間し、且つ前記半導体素子側に位置する第1内側面および前記半導体素子とは反対側に位置する第2内側面を有するとともに前記第1主面から凹む第1溝を有しており、
前記第1内側面が前記厚さ方向となす角度は、前記第2内側面が前記厚さ方向となす角度よりも小であり、
前記第1リードは、前記第1主面および前記第1溝を覆うめっき層を有し、
前記めっき層のうち前記第1内側面を覆う部分の厚さは、前記第2内側面を覆う部分の厚さよりも薄いことを特徴とする、半導体装置。 - 前記第1内側面は、前記厚さ方向に対して平行である、請求項1に記載の半導体装置。
- 前記第1リードは、前記第1内側面と前記第1主面との間に介在する第1曲面を有する、請求項1または2に記載の半導体装置。
- 前記第1曲面の前記厚さ方向寸法は、前記第1内側面の前記厚さ方向寸法よりも大である、請求項3に記載の半導体装置。
- 前記第1リードは、前記第2内側面と前記第1主面との間に介在する第2曲面を有する、請求項3または4に記載の半導体装置。
- 前記第1曲面の前記厚さ方向寸法は、前記第2曲面の前記厚さ方向寸法よりも大である、請求項5に記載の半導体装置。
- 前記第1リードは、前記第1内側面と前記第2内側面との間に介在する底面を有する、請求項5または6に記載の半導体装置。
- 前記底面は、前記厚さ方向に対して垂直である、請求項7に記載の半導体装置。
- 前記第1リードは、前記厚さ方向視において前記第1溝の両端と接する一対の凹部を有する、請求項1ないし8のいずれかに記載の半導体装置。
- 前記一対の凹部は、前記樹脂パッケージに覆われている、請求項9に記載の半導体装置。
- 前記接合材は、導電性を有する、請求項1ないし10のいずれかに記載の半導体装置。
- 前記接合材は、はんだである、請求項11に記載の半導体装置。
- 前記半導体素子は、前記厚さ方向視において矩形状であり、
前記第1溝は、前記半導体素子の一辺と平行である、請求項1ないし12のいずれかに記載の半導体装置。 - 前記第1溝は、前記樹脂パッケージに覆われている、請求項13に記載の半導体装置。
- 前記第1リードは、アイランド部を有する、請求項1ないし14のいずれかに記載の半導体装置。
- 前記第1溝は、前記アイランド部に形成されている、請求項15に記載の半導体装置。
- 前記アイランド部の前記第1裏面は、前記樹脂パッケージから露出している、請求項16に記載の半導体装置。
- 前記第1リードの前記アイランド部は、平面視において前記第1溝を挟んで前記半導体素子とは反対側に位置し且つ前記樹脂パッケージから突出する延出部を有する、請求項17に記載の半導体装置。
- 前記半導体素子は、裏面電極を有する、請求項18に記載の半導体装置。
- 前記半導体素子は、トランジスタであり、前記裏面電極は、ドレイン電極である、請求項19に記載の半導体装置。
- 前記半導体素子は、2つの主面電極を有しており、
前記樹脂パッケージから前記延出部とは反対側に突出する第2端子部を有する第2リードと、
前記2つの主面電極の一方と前記第2リードとを接続する第2ワイヤを備える、請求項20に記載の半導体装置。 - 前記第2リードと接続された前記主面電極は、ゲート電極である、請求項21に記載の半導体装置。
- 前記第2リードは、前記第2ワイヤがボンディングされた部分と前記第2端子部との間に位置する第2溝を有する、請求項22に記載の半導体装置。
- 前記樹脂パッケージから前記延出部とは反対側に突出する第3端子部を有する第3リードと、
前記2つの主面電極の他方と前記第3リードとを接続する第3ワイヤを備える、請求項22または23に記載の半導体装置。 - 前記第3リードと接続された前記主面電極は、ソース電極である、請求項24に記載の半導体装置。
- 前記第3リードは、前記第3ワイヤがボンディングされた部分と前記第3端子部との間に位置する第3溝を有する、請求項25に記載の半導体装置。
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