JP6398744B2 - 半導体デバイス用基板の製造方法 - Google Patents
半導体デバイス用基板の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 117
- 239000004065 semiconductor Substances 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 58
- 239000002184 metal Substances 0.000 claims description 58
- 239000010409 thin film Substances 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 10
- 238000002834 transmittance Methods 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 6
- 229910000510 noble metal Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910003294 NiMo Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Description
図1は、本発明の実施の形態1に係る基板の正面図である。実施の形態1に係る基板は、基板10を備えている。基板10は例えばSiC又はGaNなどの赤色光又は赤外光に対して透明な材料で形成されている。基板10の裏面に反応層12が設けられている。反応層12は、赤色光又は赤外光の透過率が基板10より低い透過防止金属と基板10の材料とが混合した層である。
図3は、実施の形態2に係る基板の正面図である。この基板は、基板10の表面に形成された半導体層20と、半導体層20の表面に形成された絶縁膜22と、を備えている。絶縁膜22は例えばSiN膜又はSiO膜である。
図4は、実施の形態3に係る基板の正面図である。この基板は、金属薄膜層14の裏面にエッチング保護膜30を備えている。エッチング保護膜30は、SiC、HfO2、ZnO2、又は貴金属で形成されている。貴金属とは、例えばAu、Pt、又はPdである。エッチング保護膜30はウエハプロセスにおけるエッチング工程にてエッチングされ難い。
図5は、実施の形態4に係る基板の正面図である。金属薄膜層14の裏面に追加金属薄膜層40が形成されている。追加金属薄膜層40は例えばW、Cr、又はAlで形成されている。W、Cr、又はAlで形成された追加金属薄膜層40は、Niを含む合金又はNiで形成された金属薄膜層14よりも赤色光又は赤外光に対する透過率が低い。追加金属薄膜層40の裏面にはエッチング保護膜30が形成されている。エッチング保護膜30は、SiC、HfO2、ZnO2、又は貴金属で形成されている。
Claims (8)
- 半導体基板の裏面に、赤色光又は赤外光の透過率が前記半導体基板より低い金属薄膜層を形成する工程と、
前記半導体基板と前記金属薄膜層を加熱して、前記金属薄膜層の材料を前記半導体基板に拡散させて、前記半導体基板の材料と前記金属薄膜層の材料が混合した反応層を形成する反応工程と、
前記反応工程の後に、赤色光又は赤外光である光線を出射し、前記金属薄膜層からの反射の有無によって半導体基板の有無を検知する検知工程と、を備えたことを特徴とする半導体デバイス用基板の製造方法。 - 前記反応工程の前に、前記半導体基板の表面に半導体層を形成し、前記半導体層の表面に絶縁膜を形成する工程を備えたことを特徴とする請求項1に記載の半導体デバイス用基板の製造方法。
- 前記金属薄膜層の裏面に、SiC、HfO 2 、ZnO 2 、又は貴金属でエッチング保護膜を形成する工程を備えたことを特徴とする請求項1又は2に記載の半導体デバイス用基板の製造方法。
- 前記金属薄膜層の裏面に、W、Cr、又はAlで追加金属薄膜層を形成する工程を備えたことを特徴とする請求項1又は2に記載の半導体デバイス用基板の製造方法。
- 前記追加金属薄膜層の裏面に、SiC、HfO 2 、ZnO 2 、又は貴金属でエッチング保護膜を形成する工程を備えたことを特徴とする請求項4に記載の半導体デバイス用基板の製造方法。
- 前記金属薄膜層はNiを含む合金又はNiで形成されたことを特徴とする請求項1〜5のいずれか1項に記載の半導体デバイス用基板の製造方法。
- 前記半導体基板は、SiC又はGaNで形成されたことを特徴とする請求項1〜6のいずれか1項に記載の半導体デバイス用基板の製造方法。
- 前記検知工程は、前記半導体基板に半導体素子を形成するための処理を行う際に実施されることを特徴とする請求項1〜7のいずれか1項に記載の半導体デバイス用基板の製造方法。
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JP2015011445A JP6398744B2 (ja) | 2015-01-23 | 2015-01-23 | 半導体デバイス用基板の製造方法 |
US14/922,403 US9966264B2 (en) | 2015-01-23 | 2015-10-26 | Substrate for semiconductor device and method of manufacturing the same |
FR1562041A FR3032061A1 (fr) | 2015-01-23 | 2015-12-09 | Substrat pour dispositif a semi-conducteur et procede de fabrication associe |
DE102016200883.8A DE102016200883B4 (de) | 2015-01-23 | 2016-01-22 | Verfahren zum Herstellen eines Substrats für eine Halbleitervorrichtung |
CN201610045414.5A CN105826167B (zh) | 2015-01-23 | 2016-01-22 | 半导体设备用衬底以及其制造方法 |
US15/943,261 US10249500B2 (en) | 2015-01-23 | 2018-04-02 | Method for manufacturing substrate for semiconductor device |
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JP6398744B2 true JP6398744B2 (ja) | 2018-10-03 |
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JP (1) | JP6398744B2 (ja) |
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DE (1) | DE102016200883B4 (ja) |
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JP7065759B2 (ja) * | 2018-12-14 | 2022-05-12 | 三菱電機株式会社 | 半導体ウエハ基板、及び半導体ウエハ基板のエッジ部の検出方法 |
JP6791459B1 (ja) * | 2020-01-21 | 2020-11-25 | 三菱電機株式会社 | 半導体ウエハおよび半導体装置の製造方法 |
CN111584497B (zh) * | 2020-05-21 | 2021-07-20 | 长江存储科技有限责任公司 | 存储器制作方法及存储器 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3582410A (en) * | 1969-07-11 | 1971-06-01 | North American Rockwell | Process for producing metal base semiconductor devices |
JPS6489470A (en) * | 1987-09-30 | 1989-04-03 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH01214118A (ja) * | 1988-02-23 | 1989-08-28 | Mitsubishi Electric Corp | 半導体製造装置 |
US5389799A (en) * | 1992-06-12 | 1995-02-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2576339B2 (ja) | 1992-08-10 | 1997-01-29 | セイコーエプソン株式会社 | 液晶表示パネル |
USRE43450E1 (en) * | 1994-09-29 | 2012-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor thin film |
JP3191728B2 (ja) * | 1997-06-23 | 2001-07-23 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP3399814B2 (ja) * | 1997-11-27 | 2003-04-21 | 科学技術振興事業団 | 微細突起構造体の製造方法 |
US6599644B1 (en) * | 2000-10-06 | 2003-07-29 | Foundation For Research & Technology-Hellas | Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide |
KR100531514B1 (ko) * | 2001-03-02 | 2005-11-28 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | Ⅱ-ⅵ족 또는 ⅲ-ⅴ족계 단결정(單結晶) 강자성(强磁性)산화물및 그 강자성 특성의 조정방법 |
JP4774789B2 (ja) * | 2004-04-14 | 2011-09-14 | 三菱化学株式会社 | エッチング方法及びエッチング液 |
JP2006024880A (ja) * | 2004-06-09 | 2006-01-26 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US7473471B2 (en) * | 2005-03-21 | 2009-01-06 | Ppg Industries Ohio, Inc. | Coating composition with solar properties |
JP4479577B2 (ja) * | 2005-04-28 | 2010-06-09 | 株式会社日立製作所 | 半導体装置 |
JP4533815B2 (ja) * | 2005-07-08 | 2010-09-01 | 株式会社東芝 | スパッタリングターゲットとそれを用いた光学薄膜の製造方法 |
JP2007149983A (ja) * | 2005-11-28 | 2007-06-14 | Rohm Co Ltd | 窒化物半導体発光素子の製造方法 |
JP2010141124A (ja) * | 2008-12-11 | 2010-06-24 | Sumitomo Electric Ind Ltd | 基板および基板の製造方法 |
US7897020B2 (en) * | 2009-04-13 | 2011-03-01 | Miasole | Method for alkali doping of thin film photovoltaic materials |
KR101047720B1 (ko) * | 2010-04-23 | 2011-07-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
JP5415650B2 (ja) | 2011-04-11 | 2014-02-12 | 新電元工業株式会社 | 炭化珪素半導体装置及びその製造方法 |
US20130048488A1 (en) * | 2011-08-29 | 2013-02-28 | Miasole | Impermeable PVD Target Coating for Porous Target Materials |
JP6261155B2 (ja) * | 2012-02-20 | 2018-01-17 | 富士電機株式会社 | SiC半導体デバイスの製造方法 |
CN104471360B (zh) * | 2012-06-18 | 2016-04-20 | 松下知识产权经营株式会社 | 红外线检测装置 |
JP5561343B2 (ja) * | 2012-11-05 | 2014-07-30 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP5830669B2 (ja) * | 2013-05-29 | 2015-12-09 | パナソニックIpマネジメント株式会社 | 半導体装置 |
US20160209273A1 (en) * | 2013-11-14 | 2016-07-21 | Panasonic Intellectual Property Management Co., Ltd. | Infrared radiation detection element, infrared radiation detection device, and piezoelectric element |
CN104037075B (zh) | 2014-06-12 | 2017-01-04 | 中国电子科技集团公司第五十五研究所 | 耐高温处理的碳化硅背面金属加厚方法 |
US20170088954A1 (en) * | 2015-09-30 | 2017-03-30 | Apple Inc. | Micro alloying for function modification |
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JP2016136589A (ja) | 2016-07-28 |
DE102016200883A1 (de) | 2016-07-28 |
DE102016200883B4 (de) | 2020-01-30 |
US10249500B2 (en) | 2019-04-02 |
CN105826167A (zh) | 2016-08-03 |
US9966264B2 (en) | 2018-05-08 |
CN105826167B (zh) | 2020-03-13 |
FR3032061A1 (fr) | 2016-07-29 |
US20180226253A1 (en) | 2018-08-09 |
US20160218017A1 (en) | 2016-07-28 |
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