JP6229369B2 - 電力増幅器 - Google Patents
電力増幅器 Download PDFInfo
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- JP6229369B2 JP6229369B2 JP2013170973A JP2013170973A JP6229369B2 JP 6229369 B2 JP6229369 B2 JP 6229369B2 JP 2013170973 A JP2013170973 A JP 2013170973A JP 2013170973 A JP2013170973 A JP 2013170973A JP 6229369 B2 JP6229369 B2 JP 6229369B2
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- power
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- 239000000758 substrate Substances 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 12
- 230000007423 decrease Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
- H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Description
図1は、本発明の実施の形態1に係る電力増幅器を示す回路図である。トランジスタTr1は、ソースが接地されたソース接地アンプである。トランジスタTr2のソースはTr1のドレインに接続されている。Tr2のゲートと接地点との間に容量C1が接続されている。Tr2は、ゲートが容量C1を介してRF的に接地されたゲート接地アンプである。
図10は、本発明の実施の形態2に係る電力増幅器を示す回路図である。図2の比較例に比べてバイアス回路4に電流源I4と抵抗R4,R5が追加されている。正の温度傾斜を持つ電流源I4は電源端子Vbiasに接続され、周辺温度に比例した電流を出力する。即ち、電流源I4が供給する電流をI4、周辺温度をT、定数をα3とすると、I4=α3*Tである。
図12は、本発明の実施の形態3に係る電力増幅器を示す回路図である。図2の比較例に比べて、カスコードアンプ3はTr2に並列に接続されたトランジスタTr5を有する。Tr5のソースはTr1のドレインに接続され、Tr5のドレインはTr2のドレインに接続されている。実施の形態2と同様にバイアス回路4に電流源I4と抵抗R4,R5が追加されている
Claims (2)
- 接地されたソースを持つ第1のトランジスタと、
前記第1のトランジスタのドレインに接続されたソースを持つ第2のトランジスタと、
前記第2のトランジスタのゲートと接地点との間に接続された容量と、
前記第1のトランジスタのアイドル電流を周辺温度に比例させる正の温度傾斜を持つアイドル電流制御回路と、
前記第1のトランジスタのドレイン電圧を前記周辺温度に比例させる正の温度傾斜を持つドレイン電圧制御回路とを備え、
前記ドレイン電圧制御回路は、前記第2のトランジスタの基板に前記周辺温度に比例したボディ電圧を供給することを特徴とする電力増幅器。 - 前記アイドル電流制御回路は、
接地されたソースと、前記第1のトランジスタのゲートに接続されたゲート及びドレインを持つ第4のトランジスタと、
前記第4のトランジスタのゲート及びドレインに前記周辺温度に比例した電流を供給する正の温度傾斜を持つ電流源とを有することを特徴とする請求項1に記載の電力増幅器。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013170973A JP6229369B2 (ja) | 2013-08-21 | 2013-08-21 | 電力増幅器 |
US14/259,209 US9203368B2 (en) | 2013-08-21 | 2014-04-23 | Power amplifier |
KR1020140096962A KR101607192B1 (ko) | 2013-08-21 | 2014-07-30 | 전력 증폭기 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013170973A JP6229369B2 (ja) | 2013-08-21 | 2013-08-21 | 電力増幅器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015041832A JP2015041832A (ja) | 2015-03-02 |
JP6229369B2 true JP6229369B2 (ja) | 2017-11-15 |
Family
ID=52479815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013170973A Active JP6229369B2 (ja) | 2013-08-21 | 2013-08-21 | 電力増幅器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9203368B2 (ja) |
JP (1) | JP6229369B2 (ja) |
KR (1) | KR101607192B1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6328849B2 (ja) * | 2014-10-22 | 2018-05-23 | 株式会社村田製作所 | 擬似抵抗回路及び電荷検出回路 |
US20160134243A1 (en) * | 2014-11-06 | 2016-05-12 | Morfis Semiconductor, Inc. | Bias-boosting circuit with dual current mirrors for rf power amplifier |
US9722547B2 (en) | 2014-12-30 | 2017-08-01 | Skyworks Solutions, Inc. | Compression control through amplitude adjustment of a radio frequency input signal |
US9698734B2 (en) * | 2015-02-15 | 2017-07-04 | Skyworks Solutions, Inc. | Power amplification system with adjustable common base bias |
US9712115B2 (en) * | 2015-11-24 | 2017-07-18 | Qualcomm Incorporated | Current-mode power amplifier |
WO2017175296A1 (ja) * | 2016-04-05 | 2017-10-12 | 三菱電機株式会社 | 増幅器 |
JP6630303B2 (ja) * | 2017-02-24 | 2020-01-15 | 株式会社東芝 | 高周波半導体増幅回路 |
US10651796B2 (en) * | 2018-02-02 | 2020-05-12 | Advanced Semiconductor Engineering, Inc. | Resistorless power amplifier |
JP7246873B2 (ja) * | 2018-07-26 | 2023-03-28 | 三星電子株式会社 | 電力増幅器 |
JP7259625B2 (ja) * | 2019-07-30 | 2023-04-18 | 住友電気工業株式会社 | トランスインピーダンス増幅回路 |
CN112751533A (zh) * | 2019-10-30 | 2021-05-04 | 联发科技股份有限公司 | 调节放大器的电源电压的方法及放大器的控制器 |
GB2590976B (en) * | 2020-01-13 | 2022-04-20 | Nokia Technologies Oy | Semiconductor based temperature sensor |
JP2021184527A (ja) | 2020-05-21 | 2021-12-02 | 住友電気工業株式会社 | 電力増幅器 |
CN114531121B (zh) * | 2022-04-24 | 2022-08-16 | 成都嘉纳海威科技有限责任公司 | 一种对温度不敏感的线性功率放大器 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4477782A (en) * | 1983-05-13 | 1984-10-16 | At&T Bell Laboratories | Compound current mirror |
US6977553B1 (en) * | 2002-09-11 | 2005-12-20 | Marvell International Ltd. | Method and apparatus for an LNA with high linearity and improved gain control |
US7304539B2 (en) * | 2003-10-16 | 2007-12-04 | Renesas Technology Corporation | High frequency power amplifier circuit and electronic component for high frequency power amplifier |
JP4575818B2 (ja) * | 2005-03-24 | 2010-11-04 | Okiセミコンダクタ株式会社 | 増幅回路用バイアス回路 |
US7265628B2 (en) * | 2005-09-13 | 2007-09-04 | Analog Devices, Inc. | Margin tracking cascode current mirror system and method |
US7969243B2 (en) * | 2009-04-22 | 2011-06-28 | Acco Semiconductor, Inc. | Electronic circuits including a MOSFET and a dual-gate JFET |
JP5158425B2 (ja) * | 2008-03-12 | 2013-03-06 | 株式会社村田製作所 | Rf電力増幅装置 |
JP5672975B2 (ja) * | 2010-11-01 | 2015-02-18 | 富士通セミコンダクター株式会社 | 可変利得増幅器 |
JP5743850B2 (ja) * | 2011-10-28 | 2015-07-01 | 株式会社東芝 | 集積回路 |
JP5143943B1 (ja) | 2011-11-04 | 2013-02-13 | シャープ株式会社 | 電力増幅回路 |
-
2013
- 2013-08-21 JP JP2013170973A patent/JP6229369B2/ja active Active
-
2014
- 2014-04-23 US US14/259,209 patent/US9203368B2/en active Active
- 2014-07-30 KR KR1020140096962A patent/KR101607192B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US9203368B2 (en) | 2015-12-01 |
KR20150021883A (ko) | 2015-03-03 |
JP2015041832A (ja) | 2015-03-02 |
US20150054583A1 (en) | 2015-02-26 |
KR101607192B1 (ko) | 2016-03-29 |
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