JP6274358B1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6274358B1 JP6274358B1 JP2017522217A JP2017522217A JP6274358B1 JP 6274358 B1 JP6274358 B1 JP 6274358B1 JP 2017522217 A JP2017522217 A JP 2017522217A JP 2017522217 A JP2017522217 A JP 2017522217A JP 6274358 B1 JP6274358 B1 JP 6274358B1
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- substrate
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- heat sink
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 146
- 239000000758 substrate Substances 0.000 claims abstract description 168
- 239000000919 ceramic Substances 0.000 claims abstract description 50
- 229910000679 solder Inorganic materials 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 20
- 229910052709 silver Inorganic materials 0.000 claims description 20
- 239000004332 silver Substances 0.000 claims description 20
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 230000005496 eutectics Effects 0.000 claims description 13
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 13
- 239000004642 Polyimide Substances 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 230000004048 modification Effects 0.000 description 13
- 238000012986 modification Methods 0.000 description 13
- 230000008018 melting Effects 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 5
- 238000005219 brazing Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000013013 elastic material Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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Abstract
Description
図1は、本発明の実施の形態1に係る半導体装置の断面図である。この半導体装置はヒートシンク1を備えている。ヒートシンク1には、一体化部品2、整合基板5および半導体チップ7が固定されている。一体化部品2は、マイクロストリップラインを有するセラミック端子2aと、整合回路2bとを一体化させたものである。整合回路2bは入出力用の整合回路である。一体化部品2は、セラミック基板と、セラミック基板の下面全面に形成された金属膜と、セラミック基板の上面に形成された金属パターンを備えている。
図3は、実施の形態2に係る半導体装置の断面図である。ヒートシンク10は、第1部分10aと、第1部分10aよりも薄く形成された第2部分10bとを備えている。図3では中央に第1部分10aがあり、その左右に第2部分10bがある。第1部分10aにははんだ9により半導体チップ7が固定されている。第2部分10bには、はんだ9により整合基板5が固定され、別のはんだ9により一体化部品2が固定されている。一体化部品2にリード4が固定されている。複数のワイヤ6により、一体化部品2と整合基板5が接続され、整合基板5と半導体チップ7が電気的に接続されている。
図7は、実施の形態3に係る半導体装置の断面図である。ヒートシンク1には、例えばはんだ9により、外側整合基板14と、整合基板5と、半導体チップ7が固定されている。外側整合基板14は、外枠部分14aと、外枠部分14aにつながる内側部分14bを備えている。内側部分14bには貫通孔14cが設けられている。この貫通孔14cにより露出したヒートシンク1に、整合基板5と半導体チップ7が固定されている。
図12は、実施の形態4に係る半導体装置の断面図である。リード4は、絶縁性接着剤12によりヒートシンク1に固定されている。絶縁性接着剤12を用いることでリード4とヒートシンク1を電気的に絶縁できる。ヒートシンク1には外側整合基板21と整合基板5と半導体チップ7が固定されている。これらの固定にはたとえば金錫共晶はんだなどのはんだ9を利用する。
図15は、実施の形態5に係る半導体装置の断面図である。外側整合基板21はセラミックではない誘電体と、当該誘電体の下面に形成された金属膜と、当該誘電体の上面に形成された金属パターンを有している。リード4は外側整合基板21を介してヒートシンク1に固定されている。より具体的には、リード4は、導電性接着剤19で外側整合基板21に接続される。外側整合基板21、整合基板5および半導体チップ7は金錫共晶はんだなどのはんだ9でヒートシンク1に固定する。
図18は、実施の形態6に係る半導体装置の断面図である。この半導体装置の外側整合基板31はフレキシブルプリント配線板で形成されている。すなわち、外側整合基板31は、弾性材料であるフレキシブル基板と、フレキシブル基板の上面に形成された金属パターンと、フレキシブル基板の裏面に形成された裏面金属を備えている。図19は、図18の半導体装置の平面図である。図19には外側整合基板31の金属パターン31aが示されている。金属パターン31aの上にリード4を導電性接着剤19で常温接合する。カバー13Aのフレーム部13aは、リード4の上面等に絶縁性接着剤12で接着する。
Claims (9)
- 平面視で四角形であり、平面視でH型の第1部分と、前記第1部分よりも薄く形成された第2部分とを有するヒートシンクと、
マイクロストリップラインを有し、前記第2部分にはんだで固定された基板と、
前記基板に固定されたリードと、
前記第2部分に固定された整合基板と、
前記第1部分に固定された半導体チップと、
前記基板と前記整合基板を接続し、前記整合基板と前記半導体チップを電気的に接続する複数のワイヤと、
底面が前記基板と前記第1部分に固定され、前記半導体チップを囲むフレームと、を備え、
前記基板の上面と前記第1部分の上面の高さが等しく、
前記フレームの底面は平坦面であることを特徴とする半導体装置。 - 前記基板は、マイクロストリップラインを有するセラミック端子と、整合回路とが一体化した一体化部品であることを特徴とする請求項1に記載の半導体装置。
- 前記半導体チップは銀焼結材で前記第1部分に固定され、
前記基板は金錫共晶はんだで前記第2部分に固定されたことを特徴とする請求項1又は2に記載の半導体装置。 - ヒートシンクと、
前記ヒートシンクの上に設けられ上面が平坦であり平面視で環状の外枠部分と、前記ヒートシンクの上に設けられ前記外枠部分の内壁に接し前記外枠部分よりも薄く形成された内側部分とを有し、前記内側部分には貫通孔が設けられた外側整合基板と、
前記外枠部分に固定されたリードと、
前記貫通孔により露出した前記ヒートシンクに固定された整合基板と、
前記貫通孔により露出した前記ヒートシンクに固定された半導体チップと、
前記内側部分と前記整合基板を接続し、前記整合基板と前記半導体チップを電気的に接続する複数のワイヤと、
前記外枠部分と前記内側部分を接続する外側整合基板ワイヤと、
前記外枠部分の上面に固定されたキャップと、を備えたことを特徴とする半導体装置。 - 前記外側整合基板ワイヤは金リボンであることを特徴とする請求項4に記載の半導体装置。
- 前記半導体チップは銀焼結材で前記ヒートシンクに固定され、
前記外側整合基板と前記整合基板は金錫共晶はんだで前記ヒートシンクに固定されたことを特徴とする請求項4又は5に記載の半導体装置。 - ヒートシンクと、
前記ヒートシンクに固定されたリードと、
前記ヒートシンクに固定された外側整合基板と、
前記ヒートシンクに固定された整合基板と、
前記ヒートシンクに固定された半導体チップと、
前記リードの上面に絶縁性接着剤で固定された環状のフレーム部と、前記フレーム部の上面に固定されたキャップ部とを有するカバーと、
前記外側整合基板と前記整合基板を接続し、前記整合基板と前記半導体チップを電気的に接続する複数のワイヤと、を備え、
前記リードと前記外側整合基板が電気的に接続され、
前記外側整合基板はセラミックではない誘電体を有し、
前記リードは前記外側整合基板を介して前記ヒートシンクに固定され、
前記リードは導電性接着剤で前記外側整合基板に接続されたことを特徴とする半導体装置。 - 前記外側整合基板はフレキシブルプリント配線板であることを特徴とする請求項7に記載の半導体装置。
- 前記外側整合基板は、ポリイミドシートと、前記ポリイミドシートの両面に形成された銅板回路を有することを特徴とする請求項7に記載の半導体装置。
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