JP5676216B2 - 圧電素子の製造方法 - Google Patents
圧電素子の製造方法 Download PDFInfo
- Publication number
- JP5676216B2 JP5676216B2 JP2010253013A JP2010253013A JP5676216B2 JP 5676216 B2 JP5676216 B2 JP 5676216B2 JP 2010253013 A JP2010253013 A JP 2010253013A JP 2010253013 A JP2010253013 A JP 2010253013A JP 5676216 B2 JP5676216 B2 JP 5676216B2
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- piezoelectric element
- fired
- piezoelectric
- piezoelectric body
- polarization
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
- H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2041—Beam type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0603—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a piezoelectric bender, e.g. bimorph
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- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0688—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction with foil-type piezoelectric elements, e.g. PVDF
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- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0688—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction with foil-type piezoelectric elements, e.g. PVDF
- B06B1/0696—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction with foil-type piezoelectric elements, e.g. PVDF with a plurality of electrodes on both sides
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
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- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/022—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the cantilever type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/178—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of a laminated structure of multiple piezoelectric layers with inner electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/088—Shaping or machining of piezoelectric or electrostrictive bodies by machining by cutting or dicing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49789—Obtaining plural product pieces from unitary workpiece
- Y10T29/49798—Dividing sequentially from leading end, e.g., by cutting or breaking
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Micromachines (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Description
ものではない。
Claims (5)
- 薄板状の焼成圧電体と、その焼成圧電体の両面に形成された膜状の電極と、を備える圧電素子を製造する方法であって、
分極方向に対し垂直な方向において、少なくとも2箇所で、前記焼成圧電体を拘束し、その焼成圧電体を分極する過程を有する、圧電素子の製造方法であり、
分極した後に、前記薄板状の焼成圧電体の拘束する箇所を切断する圧電素子の製造方法。 - 前記薄板状の焼成圧電体を拘束する箇所が、その焼成圧電体の長手方向の両端である請求項1に記載の圧電素子の製造方法。
- 前記薄板状の焼成圧電体を拘束する箇所において、複数の方向から焼成圧電体を把持して、その焼成圧電体を拘束する請求項1又は2に記載の圧電素子の製造方法。
- 前記切断する手段が、電子線、イオンビーム、エッチング、ブラスト加工、レーザー加工から選ばれる何れかの手段である請求項1〜3のいずれか1項に記載の圧電素子の製造方法。
- 分極方向に対し垂直な方向において、少なくとも2ヶ所で、薄板状の焼成圧電体を拘束し、その焼成圧電体を分極する焼成圧電体の分極方法であり、
分極した後に、前記薄板状の焼成圧電体の拘束する箇所を切断する焼成圧電体の分極方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010253013A JP5676216B2 (ja) | 2010-11-11 | 2010-11-11 | 圧電素子の製造方法 |
CN201110309740.XA CN102468423B (zh) | 2010-11-11 | 2011-10-10 | 压电元件的制造方法 |
US13/271,597 US9246081B2 (en) | 2010-11-11 | 2011-10-12 | Method for manufacturing piezoelectric element |
EP20110185317 EP2453495A3 (en) | 2010-11-11 | 2011-10-14 | Method for manufacturing piezoelectric element |
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JP2010253013A JP5676216B2 (ja) | 2010-11-11 | 2010-11-11 | 圧電素子の製造方法 |
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JP2012104715A JP2012104715A (ja) | 2012-05-31 |
JP5676216B2 true JP5676216B2 (ja) | 2015-02-25 |
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JP2010253013A Expired - Fee Related JP5676216B2 (ja) | 2010-11-11 | 2010-11-11 | 圧電素子の製造方法 |
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US (1) | US9246081B2 (ja) |
EP (1) | EP2453495A3 (ja) |
JP (1) | JP5676216B2 (ja) |
CN (1) | CN102468423B (ja) |
Cited By (1)
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CN104069674B (zh) * | 2014-06-11 | 2015-07-15 | 温州宇丰化纤机械有限公司 | 一种cpf-pt系列熔体过滤器的清洗方法 |
Families Citing this family (7)
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US8981627B2 (en) * | 2012-06-04 | 2015-03-17 | Tdk Corporation | Piezoelectric device with electrode films and electroconductive oxide film |
JP5860980B2 (ja) * | 2013-02-01 | 2016-02-16 | 株式会社村田製作所 | 押圧センサ付き表示パネル、および押圧入力機能付き電子機器 |
CN107078714B (zh) * | 2014-10-17 | 2021-04-20 | 株式会社村田制作所 | 压电器件、压电器件的制造方法 |
WO2016158743A1 (ja) * | 2015-03-30 | 2016-10-06 | 株式会社村田製作所 | マザーの圧電素子及び積層型圧電素子並びに積層型圧電素子の製造方法 |
US10069061B2 (en) * | 2016-06-02 | 2018-09-04 | eLux Inc. | Fabrication and harvest of piezoelectric plates |
CN109427958A (zh) * | 2017-09-05 | 2019-03-05 | 王开安 | 薄膜极化承载组件及薄膜极化设备 |
CN110467456A (zh) * | 2019-09-16 | 2019-11-19 | 桂林电子科技大学 | 一种具有可逆热光调制特性的材料及其制备方法 |
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JPS5492307A (en) * | 1977-12-29 | 1979-07-21 | Sony Corp | Driving circuit of electrostrictive converter |
DE3585938D1 (de) * | 1984-09-26 | 1992-06-04 | Terumo Corp | Ultraschallwandler und verfahren zur herstellung desselben. |
JPS6484675A (en) * | 1987-09-28 | 1989-03-29 | Fuji Rubber Co Ltd | Manufacture of piezoelectric element |
JP2001068751A (ja) | 1999-08-25 | 2001-03-16 | Murata Mfg Co Ltd | 圧電アクチュエータ |
JP3613140B2 (ja) * | 1999-08-26 | 2005-01-26 | 株式会社村田製作所 | 圧電磁器組成物およびそれを用いた圧電セラミック素子 |
US6953977B2 (en) * | 2000-02-08 | 2005-10-11 | Boston Microsystems, Inc. | Micromechanical piezoelectric device |
JP2004296783A (ja) | 2003-03-27 | 2004-10-21 | Kyocera Corp | 圧電磁器の分極法及び分極装置 |
CN100411214C (zh) | 2003-12-16 | 2008-08-13 | 松下电器产业株式会社 | 压电体薄膜装置和压电体薄膜装置的驱动方法 |
JP2005203750A (ja) * | 2003-12-16 | 2005-07-28 | Matsushita Electric Ind Co Ltd | 圧電体薄膜装置および圧電体薄膜装置の駆動方法 |
JP2006203304A (ja) * | 2005-01-18 | 2006-08-03 | Hitachi Media Electoronics Co Ltd | 圧電薄膜共振器及びそれを用いた発振器並びにそれを内蔵した半導体集積回路 |
JP2006261656A (ja) * | 2005-02-21 | 2006-09-28 | Brother Ind Ltd | 圧電アクチュエータおよびその製造方法 |
DE602006017457D1 (de) | 2005-02-21 | 2010-11-25 | Brother Ind Ltd | Verfahren zur Herstellung eines piezoelektrischen Aktors |
EP1865311A4 (en) | 2005-03-18 | 2012-03-14 | Ngk Insulators Ltd | PIEZOELECTRIC ELEMENT INSPECTION METHOD, INSPECTION DEVICE, AND POLARIZATION PROCESSING METHOD |
CN100555697C (zh) * | 2005-06-29 | 2009-10-28 | 日本碍子株式会社 | 压电/电致伸缩元件的制造方法 |
EP1909340B1 (en) | 2005-06-29 | 2012-10-24 | NGK Insulators, Ltd. | Piezoelectric/electrostriction film type element |
JP4858546B2 (ja) * | 2006-12-27 | 2012-01-18 | 株式会社村田製作所 | 圧電バルブ |
WO2008102481A1 (ja) * | 2007-02-21 | 2008-08-28 | Murata Manufacturing Co., Ltd. | 圧電共振子の製造方法及び圧電共振子 |
US8375538B2 (en) * | 2009-03-27 | 2013-02-19 | Ngk Insulators, Ltd. | Method for manufacturing piezoelectric actuator |
-
2010
- 2010-11-11 JP JP2010253013A patent/JP5676216B2/ja not_active Expired - Fee Related
-
2011
- 2011-10-10 CN CN201110309740.XA patent/CN102468423B/zh not_active Expired - Fee Related
- 2011-10-12 US US13/271,597 patent/US9246081B2/en not_active Expired - Fee Related
- 2011-10-14 EP EP20110185317 patent/EP2453495A3/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104069674B (zh) * | 2014-06-11 | 2015-07-15 | 温州宇丰化纤机械有限公司 | 一种cpf-pt系列熔体过滤器的清洗方法 |
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Publication number | Publication date |
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EP2453495A3 (en) | 2014-01-22 |
CN102468423B (zh) | 2015-09-30 |
EP2453495A2 (en) | 2012-05-16 |
US20120117769A1 (en) | 2012-05-17 |
US9246081B2 (en) | 2016-01-26 |
CN102468423A (zh) | 2012-05-23 |
JP2012104715A (ja) | 2012-05-31 |
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