JP5419580B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5419580B2 JP5419580B2 JP2009178356A JP2009178356A JP5419580B2 JP 5419580 B2 JP5419580 B2 JP 5419580B2 JP 2009178356 A JP2009178356 A JP 2009178356A JP 2009178356 A JP2009178356 A JP 2009178356A JP 5419580 B2 JP5419580 B2 JP 5419580B2
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Description
本実施の形態では、薄膜トランジスタ及びその作製工程について、図1及び図2を用いて説明する。
本実施の形態は、表示装置のスイッチング素子として実施の形態1で得られた薄膜トランジスタを用いる一例を示す。
また、表示装置のスイッチング素子として薄膜トランジスタを用いる場合、オフ状態でのリーク電流の低減が重要視される。ここでは、オフ状態でのリーク電流値を低減する薄膜トランジスタの構造の一例を示す。
本実施の形態では、同一基板上に少なくとも駆動回路の一部と、画素部に配置する薄膜トランジスタを作製する例について以下に説明する。
本発明の一態様の薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する表示装置を作製することができる。また、本発明の一態様の薄膜トランジスタを駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを実現することができる。
本実施の形態では、本発明の一態様の半導体装置として電子ペーパーの例を示す。
本実施の形態では、本発明の一態様の半導体装置として発光表示装置の例を示す。表示装置の有する表示素子としては、ここではエレクトロルミネッセンスを利用する発光素子を用いて示す。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
本発明の半導体装置の一形態である表示パネルの構成について、以下に示す。本実施の形態では、表示素子として液晶素子を有する液晶表示装置の一形態である液晶表示パネル(液晶パネルともいう)、表示素子として発光素子を有する半導体装置の一形態である発光表示パネル(発光パネルともいう)について説明する。
本発明の一形態に係る半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
101:ゲート電極
102:第1の絶縁層
103:第2の絶縁膜
104:第3の絶縁膜
105:IGZO半導体層
106:絶縁物
107:チャネル保護膜
108:薄い領域
109:ソース電極
110:ドレイン電極
111:半導体膜
Claims (6)
- 第1の絶縁膜上に、第2の絶縁膜を形成し、
前記第2の絶縁膜上に、酸化物半導体層を形成し、
前記酸化物半導体層上に、第3の絶縁膜を形成し、
前記第3の絶縁膜上に、第4の絶縁膜を形成する半導体装置の作製方法であって、
前記第2の絶縁膜と前記第3の絶縁膜とは、酸化珪素を含み、
前記第1の絶縁膜と前記第4の絶縁膜とは、窒化珪素を含み、
前記酸化物半導体層は、トランジスタのチャネル形成領域を有し、
前記酸化物半導体層の下面全面は、前記第2の絶縁膜に接しており、
前記第2の絶縁膜は、酸素を放出する機能を有することを特徴とする半導体装置の作製方法。 - 第1の絶縁膜上に、第2の絶縁膜を形成し、
前記第2の絶縁膜上に、酸化物半導体層を形成し、
前記酸化物半導体層上に、第3の絶縁膜を形成し、
前記第3の絶縁膜上に、第4の絶縁膜を形成する半導体装置の作製方法であって、
前記第2の絶縁膜と前記第3の絶縁膜とは、酸化珪素を含み、
前記第1の絶縁膜と前記第4の絶縁膜とは、窒化珪素を含み、
前記酸化物半導体層は、In、Ga、及びZnを含み、
前記酸化物半導体層は、トランジスタのチャネル形成領域を有し、
前記酸化物半導体層の下面全面は、前記第2の絶縁膜に接しており、
前記第2の絶縁膜は、酸素を放出する機能を有することを特徴とする半導体装置の作製方法。 - 請求項1または請求項2において、
前記トランジスタのゲート電極は銅を含むことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか一において、
前記酸化物半導体層上面及び前記第3の絶縁膜上面に接して、ソース電極及びドレイン電極を形成し、
前記酸化物半導体層は、前記ソース電極と接する第1の領域と、前記ドレイン電極と接する第2の領域と、前記第3の絶縁膜と接する第3の領域とを有し、
前記第1の領域の膜厚及び前記第2の領域の膜厚のそれぞれは、前記第3の領域の膜厚よりも薄いことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項4のいずれか一において、
前記第1の絶縁膜または前記第2の絶縁膜は、ハロゲン元素を含むことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項5のいずれか一において、
前記第3の絶縁膜は、ハロゲン元素を含むことを特徴とする半導体装置の作製方法。
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JP2013239719A (ja) | 2013-11-28 |
TW201532284A (zh) | 2015-08-16 |
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CN101685835B (zh) | 2013-07-03 |
TWI627757B (zh) | 2018-06-21 |
CN102779844A (zh) | 2012-11-14 |
US20170033228A1 (en) | 2017-02-02 |
US9859441B2 (en) | 2018-01-02 |
US8293595B2 (en) | 2012-10-23 |
JP5307303B2 (ja) | 2013-10-02 |
TW201724528A (zh) | 2017-07-01 |
TWI622175B (zh) | 2018-04-21 |
US20150060850A1 (en) | 2015-03-05 |
JP2017092484A (ja) | 2017-05-25 |
TW201025612A (en) | 2010-07-01 |
TWI495108B (zh) | 2015-08-01 |
US20100025675A1 (en) | 2010-02-04 |
TWI450399B (zh) | 2014-08-21 |
JP2014075588A (ja) | 2014-04-24 |
US8841710B2 (en) | 2014-09-23 |
CN102779844B (zh) | 2015-09-23 |
JP2010056546A (ja) | 2010-03-11 |
US20120273779A1 (en) | 2012-11-01 |
JP5975969B2 (ja) | 2016-08-23 |
JP6324453B2 (ja) | 2018-05-16 |
TW201244113A (en) | 2012-11-01 |
JP2016213500A (ja) | 2016-12-15 |
US9412798B2 (en) | 2016-08-09 |
CN101685835A (zh) | 2010-03-31 |
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