JP5240996B2 - 熱硬化性組成物及びそれを用いた光半導体装置 - Google Patents
熱硬化性組成物及びそれを用いた光半導体装置 Download PDFInfo
- Publication number
- JP5240996B2 JP5240996B2 JP2008128679A JP2008128679A JP5240996B2 JP 5240996 B2 JP5240996 B2 JP 5240996B2 JP 2008128679 A JP2008128679 A JP 2008128679A JP 2008128679 A JP2008128679 A JP 2008128679A JP 5240996 B2 JP5240996 B2 JP 5240996B2
- Authority
- JP
- Japan
- Prior art keywords
- thermosetting composition
- optical semiconductor
- semiconductor device
- aluminosiloxane
- epoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000000203 mixture Substances 0.000 title claims description 36
- 229920001187 thermosetting polymer Polymers 0.000 title claims description 33
- 230000003287 optical effect Effects 0.000 title claims description 32
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 239000004593 Epoxy Substances 0.000 claims description 21
- 229920001296 polysiloxane Polymers 0.000 claims description 18
- 125000000524 functional group Chemical group 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 description 16
- -1 aluminum compound Chemical class 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000001723 curing Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 125000003700 epoxy group Chemical group 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000009257 reactivity Effects 0.000 description 6
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 6
- 150000003377 silicon compounds Chemical class 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 229920002545 silicone oil Polymers 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- GKOZKEKDBJADSV-UHFFFAOYSA-N disilanol Chemical compound O[SiH2][SiH3] GKOZKEKDBJADSV-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 description 1
- UAEJRRZPRZCUBE-UHFFFAOYSA-N trimethoxyalumane Chemical compound [Al+3].[O-]C.[O-]C.[O-]C UAEJRRZPRZCUBE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
- C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Epoxy Resins (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Silicon Polymers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
で表される化合物であることが好ましい。
表1に示した各成分を混合することにより実施例1〜6及び比較例1の熱硬化性組成物を得た。
(耐熱性)
実施例1〜6及び比較例1の熱硬化性組成物をPETフィルムに塗工して、150℃で2時間加熱して厚み400μmの硬化物を得た。その硬化物について初期の光透過率及び200℃で16時間加熱後の光透過率を測定し、光透過率の低下が初期値に比べて10%未満のものを○、10%以上のものを×とした。その結果を表1に示す。なお、光透過率は分光光度計(U−4100、日立ハイテク社製)を用いて、波長400nmで測定した。
実施例1〜6及び比較例1で得られた光半導体装置を600mAの電流を流して初期の輝度及び100時間点灯後の輝度を測定し、輝度の低下が初期値に比べて10%未満のものを○、10%以上のものを×とした。その結果を表1に示す。なお、輝度はMCPD(瞬間マルチ測光システムMCPD-3000、大塚電子社製)により測定した。
Claims (5)
- アルミノシロキサン及びエポキシシリコーンを含有してなる、光半導体素子の封止用熱硬化性組成物。
- 前記エポキシシリコーンのエポキシ当量が500〜5000g/molである、請求項1記載の熱硬化性組成物。
- 前記アルミノシロキサンが光重合性官能基を有する、請求項1又は2記載の熱硬化性組成物。
- 前記光重合性官能基がエチレン性二重結合を有する基である、請求項3記載の熱硬化性組成物。
- 請求項1〜4いずれか記載の熱硬化性組成物を用いて光半導体素子を封止してなる光半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008128679A JP5240996B2 (ja) | 2008-05-15 | 2008-05-15 | 熱硬化性組成物及びそれを用いた光半導体装置 |
US12/419,618 US8592533B2 (en) | 2008-05-15 | 2009-04-07 | Thermosetting composition |
EP09005574.0A EP2130872B1 (en) | 2008-05-15 | 2009-04-21 | Thermosetting composition |
KR1020090040051A KR20090119700A (ko) | 2008-05-15 | 2009-05-08 | 열경화성 조성물 |
CN200910138911XA CN101580580B (zh) | 2008-05-15 | 2009-05-13 | 热固化性组合物 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008128679A JP5240996B2 (ja) | 2008-05-15 | 2008-05-15 | 熱硬化性組成物及びそれを用いた光半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009275141A JP2009275141A (ja) | 2009-11-26 |
JP5240996B2 true JP5240996B2 (ja) | 2013-07-17 |
Family
ID=40886792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008128679A Expired - Fee Related JP5240996B2 (ja) | 2008-05-15 | 2008-05-15 | 熱硬化性組成物及びそれを用いた光半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8592533B2 (ja) |
EP (1) | EP2130872B1 (ja) |
JP (1) | JP5240996B2 (ja) |
KR (1) | KR20090119700A (ja) |
CN (1) | CN101580580B (ja) |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2719091C3 (de) | 1976-06-23 | 1979-08-23 | Th. Goldschmidt Ag, 4300 Essen | Trennmittel für Polyurethanformmassen und Verfahren zu ihrer Herstellung |
JP2791438B2 (ja) * | 1988-09-09 | 1998-08-27 | 関西ペイント株式会社 | 樹脂組成物及びその硬化方法 |
JPH0786185B2 (ja) * | 1990-06-11 | 1995-09-20 | 大八化学工業株式会社 | 被覆用塗料組成物 |
US5614654A (en) * | 1995-05-30 | 1997-03-25 | Shin-Etsu Chemical Co., Ltd. | Aluminosiloxanes, titanosiloxanes, (poly)stannosiloxanes, and their preparation |
JP2003165841A (ja) * | 2001-11-29 | 2003-06-10 | Dow Corning Toray Silicone Co Ltd | ポリオルガノメタロシロキサンおよびその製造方法 |
JP2004323555A (ja) * | 2003-04-21 | 2004-11-18 | Nippon Paint Co Ltd | 金属コロイド光輝材およびその製造方法 |
JP4300418B2 (ja) * | 2004-04-30 | 2009-07-22 | 信越化学工業株式会社 | エポキシ・シリコーン混成樹脂組成物及び発光半導体装置 |
KR100613269B1 (ko) * | 2004-06-16 | 2006-08-21 | 실로켐 주식회사 | 알루미노실록산 화합물이 포함된 고분자 성형체 |
JP4630032B2 (ja) * | 2004-10-04 | 2011-02-09 | 東レ・ダウコーニング株式会社 | ポリオルガノシロキサン及びそれを含む硬化性シリコーン組成物並びにその用途 |
US7592399B2 (en) * | 2005-12-19 | 2009-09-22 | Shin-Etsu Chemical Co., Ltd. | Epoxy/silicone hybrid resin composition and optical semiconductor device |
JP4985920B2 (ja) | 2006-06-16 | 2012-07-25 | Jsr株式会社 | 熱硬化性樹脂組成物および光半導体用接着剤 |
-
2008
- 2008-05-15 JP JP2008128679A patent/JP5240996B2/ja not_active Expired - Fee Related
-
2009
- 2009-04-07 US US12/419,618 patent/US8592533B2/en not_active Expired - Fee Related
- 2009-04-21 EP EP09005574.0A patent/EP2130872B1/en not_active Not-in-force
- 2009-05-08 KR KR1020090040051A patent/KR20090119700A/ko not_active Application Discontinuation
- 2009-05-13 CN CN200910138911XA patent/CN101580580B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2009275141A (ja) | 2009-11-26 |
CN101580580B (zh) | 2013-03-27 |
EP2130872B1 (en) | 2014-04-09 |
US20090283719A1 (en) | 2009-11-19 |
CN101580580A (zh) | 2009-11-18 |
EP2130872A1 (en) | 2009-12-09 |
KR20090119700A (ko) | 2009-11-19 |
US8592533B2 (en) | 2013-11-26 |
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