JP4326297B2 - モノリシック多波長レーザ素子およびその製造方法 - Google Patents
モノリシック多波長レーザ素子およびその製造方法 Download PDFInfo
- Publication number
- JP4326297B2 JP4326297B2 JP2003339490A JP2003339490A JP4326297B2 JP 4326297 B2 JP4326297 B2 JP 4326297B2 JP 2003339490 A JP2003339490 A JP 2003339490A JP 2003339490 A JP2003339490 A JP 2003339490A JP 4326297 B2 JP4326297 B2 JP 4326297B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal electrode
- laser element
- electrode layer
- monolithic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000002184 metal Substances 0.000 claims description 70
- 230000010355 oscillation Effects 0.000 claims description 68
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 48
- 230000000903 blocking effect Effects 0.000 claims description 45
- 239000010409 thin film Substances 0.000 claims description 40
- 239000010408 film Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 25
- 238000009713 electroplating Methods 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 229910001020 Au alloy Inorganic materials 0.000 claims description 3
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 3
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 219
- 238000005253 cladding Methods 0.000 description 28
- 238000005530 etching Methods 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 16
- 230000017525 heat dissipation Effects 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 241000288049 Perdix perdix Species 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
- G11B7/1275—Two or more lasers having different wavelengths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B2007/0003—Recording, reproducing or erasing systems characterised by the structure or type of the carrier
- G11B2007/0006—Recording, reproducing or erasing systems characterised by the structure or type of the carrier adapted for scanning different types of carrier, e.g. CD & DVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003339490A JP4326297B2 (ja) | 2003-09-30 | 2003-09-30 | モノリシック多波長レーザ素子およびその製造方法 |
| US10/952,356 US7274721B2 (en) | 2003-09-30 | 2004-09-27 | Monolithic multi-wavelength laser device including a plurality of lasing parts and method of fabricating the same |
| CNB2004100833632A CN1309127C (zh) | 2003-09-30 | 2004-09-30 | 包括多个激光振荡部的单片多波长激光元件及其制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003339490A JP4326297B2 (ja) | 2003-09-30 | 2003-09-30 | モノリシック多波長レーザ素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005109089A JP2005109089A (ja) | 2005-04-21 |
| JP4326297B2 true JP4326297B2 (ja) | 2009-09-02 |
Family
ID=34373351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003339490A Expired - Fee Related JP4326297B2 (ja) | 2003-09-30 | 2003-09-30 | モノリシック多波長レーザ素子およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7274721B2 (zh) |
| JP (1) | JP4326297B2 (zh) |
| CN (1) | CN1309127C (zh) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005217255A (ja) * | 2004-01-30 | 2005-08-11 | Sharp Corp | 半導体レーザおよびその製造方法 |
| JP2005347478A (ja) * | 2004-06-02 | 2005-12-15 | Sharp Corp | 半導体レーザ素子 |
| JP4884698B2 (ja) * | 2005-04-27 | 2012-02-29 | シャープ株式会社 | 半導体装置の製造方法、半導体レーザ装置、光伝送モジュールおよび光ディスク装置 |
| JP5013698B2 (ja) * | 2005-10-21 | 2012-08-29 | ローム株式会社 | ２波長型半導体レーザ発光装置及びその製造方法 |
| JP4762729B2 (ja) * | 2006-01-13 | 2011-08-31 | シャープ株式会社 | 半導体レーザ素子の実装構造 |
| JP4047358B2 (ja) * | 2006-03-31 | 2008-02-13 | 松下電器産業株式会社 | 自励発振型半導体レーザ装置 |
| JP4967875B2 (ja) * | 2007-07-17 | 2012-07-04 | 三菱電機株式会社 | 半導体発光装置及びその製造方法 |
| JP5368957B2 (ja) * | 2009-12-04 | 2013-12-18 | シャープ株式会社 | 半導体レーザチップの製造方法 |
| JP5787069B2 (ja) * | 2011-03-30 | 2015-09-30 | ソニー株式会社 | 多波長半導体レーザ素子 |
| JP2015023175A (ja) * | 2013-07-19 | 2015-02-02 | ソニー株式会社 | 半導体発光素子および半導体発光装置 |
| TW201517298A (zh) * | 2013-10-17 | 2015-05-01 | Lextar Electronics Corp | 發光結構的製造方法 |
| JP7137556B2 (ja) * | 2017-03-16 | 2022-09-14 | ヌヴォトンテクノロジージャパン株式会社 | 半導体レーザ装置、半導体レーザモジュール、溶接用レーザ光源システム、及び、半導体レーザ装置の製造方法 |
| CN109326952B (zh) * | 2017-07-31 | 2020-07-07 | 山东华光光电子股份有限公司 | 一种高电流密度、高散热系数的半导体激光器制备方法 |
| WO2019026474A1 (ja) * | 2017-08-04 | 2019-02-07 | パナソニックＩｐマネジメント株式会社 | サブマウント、半導体レーザ装置及び熱アシストハードディスク装置 |
| CN111276867B (zh) * | 2018-12-05 | 2021-01-29 | 中国科学院半导体研究所 | 单片集成双波长半导体激光器及其制备方法 |
| JP6887482B2 (ja) | 2019-01-14 | 2021-06-16 | シャープ株式会社 | 発光素子 |
| CN113725731B (zh) * | 2021-09-02 | 2023-10-31 | 深圳市中科光芯半导体科技有限公司 | 双波长垂直腔面发射激光器及其制备方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01204487A (ja) | 1988-02-10 | 1989-08-17 | Nec Corp | 半導体レーザ装置 |
| JPH05136526A (ja) | 1991-11-11 | 1993-06-01 | Mitsubishi Electric Corp | 半導体レーザ及びその製造方法 |
| JP2000091698A (ja) | 1998-09-09 | 2000-03-31 | Victor Co Of Japan Ltd | 半導体レ−ザ素子 |
| US6711191B1 (en) * | 1999-03-04 | 2004-03-23 | Nichia Corporation | Nitride semiconductor laser device |
| IL151192A0 (en) * | 2000-02-16 | 2003-04-10 | Nichia Corp | Nitride semiconductor laser device |
| US6501783B1 (en) * | 2000-02-24 | 2002-12-31 | Lucent Technologies Inc. | Distributed feedback surface plasmon laser |
| JP2001339119A (ja) * | 2000-05-26 | 2001-12-07 | Victor Co Of Japan Ltd | リッジ導波路型半導体レ−ザ素子の製造方法 |
| US6586762B2 (en) * | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
| JP4416297B2 (ja) * | 2000-09-08 | 2010-02-17 | シャープ株式会社 | 窒化物半導体発光素子、ならびにそれを使用した発光装置および光ピックアップ装置 |
| JP2002094189A (ja) * | 2000-09-14 | 2002-03-29 | Sharp Corp | 窒化物半導体レーザ素子およびそれを用いた光学装置 |
| JP2002094181A (ja) | 2000-09-14 | 2002-03-29 | Sony Corp | 半導体レーザ素子及びその作製方法 |
| CN1307756C (zh) * | 2001-03-30 | 2007-03-28 | 阿吉尔系统光电子学监护股份有限公司 | 光电子器件 |
| JP3849758B2 (ja) * | 2001-04-12 | 2006-11-22 | ソニー株式会社 | 半導体レーザ素子 |
| JP2004153136A (ja) | 2002-10-31 | 2004-05-27 | Sharp Corp | 半導体レーザ素子とその製造方法 |
| JP4317357B2 (ja) | 2002-11-18 | 2009-08-19 | シャープ株式会社 | 半導体レーザ素子およびその製造方法 |
| JP2004193330A (ja) | 2002-12-11 | 2004-07-08 | Sharp Corp | モノリシック多波長レーザ素子とその製法 |
-
2003
- 2003-09-30 JP JP2003339490A patent/JP4326297B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-27 US US10/952,356 patent/US7274721B2/en not_active Expired - Fee Related
- 2004-09-30 CN CNB2004100833632A patent/CN1309127C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005109089A (ja) | 2005-04-21 |
| CN1309127C (zh) | 2007-04-04 |
| US20050069006A1 (en) | 2005-03-31 |
| US7274721B2 (en) | 2007-09-25 |
| CN1604414A (zh) | 2005-04-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4326297B2 (ja) | モノリシック多波長レーザ素子およびその製造方法 | |
| US7045810B2 (en) | Monolithic multiple-wavelength laser device and method of fabricating the same | |
| US6984841B2 (en) | Nitride semiconductor light emitting element and production thereof | |
| JP4451371B2 (ja) | 窒化物半導体レーザ素子 | |
| JP4204982B2 (ja) | 半導体レーザ素子 | |
| US7406111B2 (en) | Semiconductor laser diode and method for manufacturing the same | |
| KR100621117B1 (ko) | 반도체 레이저 및 그 제조 방법 | |
| US20080056324A1 (en) | Method of producing multi-wavelength semiconductor laser device | |
| WO2002056435A9 (fr) | Element laser a semi-conducteur au nitrure et dispositif optique contenant cet element | |
| JP3659621B2 (ja) | 窒化物系半導体レーザ装置の製造方法 | |
| JP2004022717A (ja) | 多波長レーザ装置 | |
| JP4854133B2 (ja) | 窒化物半導体レーザ素子とこれを含む光学装置 | |
| JP4952184B2 (ja) | 窒化物半導体レーザ素子及びその製造方法 | |
| JP2008277492A (ja) | 半導体発光素子及びその製造方法 | |
| JP2007158195A (ja) | 半導体レーザ素子およびその製造方法 | |
| JP4814538B2 (ja) | 半導体レーザ装置及びその製造方法 | |
| JP4757634B2 (ja) | 半導体発光素子およびその製造方法 | |
| JP4960777B2 (ja) | 端面発光型半導体レーザチップ | |
| JP2006228892A (ja) | 半導体発光素子及びその製造方法 | |
| JP2010272569A (ja) | 半導体レーザ装置 | |
| JP2005191547A (ja) | 半導体レーザ素子及びその製造方法 | |
| JP4426980B2 (ja) | 半導体発光素子の製造方法 | |
| US7034341B2 (en) | Semiconductor laser device having a multi-layer buffer layer | |
| JP2007305635A (ja) | 窒化物半導体発光素子 | |
| JP2000349387A (ja) | 半導体レーザ装置及びその作製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050810 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080811 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080819 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081008 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090127 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090310 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090602 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090609 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120619 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4326297 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120619 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130619 Year of fee payment: 4 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |