JP3650970B2 - Manufacturing method of semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device called an area array package having connection terminals arranged in a grid pattern, such as a BGA (ball grid array) or a CSP (chip size package), and a method of manufacturing the same. About.
[0002]
[Prior art]
One of semiconductor devices formed by sealing a semiconductor chip in which an integrated circuit is incorporated and a plurality of connection portions for the integrated circuit is provided is a semiconductor device called an area array package. In this area array package, the connection terminals are arranged in a grid pattern.
As a method for manufacturing the area array package, for example, there are methods described in Japanese Patent Application Laid-Open Nos. 2000-252388, 2000-252389, and 2000-252390. According to these conventional techniques, after placing a metal foil on a mold for sealing a semiconductor chip with a resin member, a resin material is pressurized and injected into the mold. At the time of molding the resin material, the metal foil is formed with a recess or a projection along the mold by using the pressure of the resin material. A plurality of connection portions provided on the semiconductor chip are connected to the predetermined recesses or protrusions via bonding wires. The metal foil exposed from the bottom surface of the resin member formed by curing the resin material is divided into a large number of separation areas using high-pressure jet water or laser light, and thereby, in each recess or projection, A large number of electrode members arranged in a lattice shape to which terminal members such as solder balls are connected are configured. Each terminal member is fixed to each separation area, that is, the electrode member formed by the metal foil.
[0003]
[Problems to be solved by the invention]
By the way, according to the above-described prior art, the metal foil exposed from the bottom surface of the resin member is divided into a large number of pieces by the above-described cutting process using jet water or laser light. Since the electrode members arranged in a lattice shape for the members are configured, the resin member may be cut continuously after the cutting of the metal foil during the cutting process. There is a risk of damaging the internal semiconductor chip or the wire extending from the connecting portion of the chip.
[0004]
Accordingly, an object of the present invention is to provide a manufacturing method for forming an area array package without damaging each member such as a resin-encapsulated semiconductor chip or a bonding wire.
Furthermore, another object of the present invention is to provide an area array package in which the heat dissipation of a semiconductor chip is enhanced as compared with the prior art by using the manufacturing method according to the present invention.
It is still another object of the present invention to provide an area array package manufacturing method that can reduce the risk of damaging each member such as a resin-encapsulated semiconductor chip or a bonding wire.
Still another object of the present invention is to provide a novel area array package using the manufacturing method according to the present invention.
[0017]
  The present inventionThe semiconductor chip in which the integrated circuit is incorporated is arranged at a predetermined position on one surface of the conductive plate member where the regions to be the plurality of electrode portions are set, and the plurality of connection portions of the semiconductor chip Are electrically connected to the corresponding regions, and then one surface of the conductive plate member is resin-sealed with a resin member so as to enclose the semiconductor chip, and then the terminals are exposed on the exposed surfaces of the plurality of electrode portions. In the method of manufacturing a semiconductor device in which a portion is provided, the conductive plate member is provided with a plurality of region setting slits extending in parallel with each other in the thickness direction, and after the resin sealing, The insulating plate member is divided in a direction crossing the plurality of region setting slits to form the plurality of electrode portions.
[0018]
  In the manufacturing method according to the present invention, prior to disposing the semiconductor chip and the bonding wire on one surface of the conductive plate member, the conductive plate member for each electrode member is mutually spaced apart at a predetermined interval. A plurality of slits extending in parallel and penetrating from the one surface to the other surface of the conductive plate member are formed, and the semiconductor chip and the bonding wire are sealed with the resin member on the conductive plate member. After being stopped, the conductive plate memberCross direction of multiple area setting slitsDivided into Thereby, each electrode in each region of the conductive plate member separated into eachPartIt is formed.
[0019]
  Each electrodePartTherefore, as described above, each of the regions is divided into a plurality of slits formed in the conductive plate member prior to the resin sealing described above on the conductive plate member, and the slits are divided. Each of the electrodes is partitioned by a dividing step after resin sealing.PartIt is formed.
  Therefore, for example, by forming the slits in the longitudinal direction of the conductive plate member, by performing the same cutting process in the lateral direction after the resin sealing step, for example, each electrodePartCan be formed. As a result, since it is not necessary to perform a conventional cutting process for cutting the conductive plate member along the longitudinal direction, a resin is obtained by the cutting process in the processing step for forming each electrode member. The probability that the sealed semiconductor chip, the bonding wire, and the like are damaged is reduced to half.
[0020]
  Therefore, the present invention relates toMadeAccording to the manufacturing method, the risk of damaging the resin-sealed semiconductor chip and the bonding wire is reduced as compared with the conventional method.
[0021]
  The slit can be formed by etching. The slit can be formed by punching press processing.
  Each electrodePartThe above-mentioned division for forming can be performed by cutting.
  Each electrodePartThe aforementioned division for forming can be performed by perforation. The above drilling can be performed using a drill or a laser.
[0022]
  The width dimension of each slit can be gradually increased from the one surface to the other surface along the thickness direction of the conductive plate member.
  Each region setting slit may be integrally formed with a cutting assist slit portion extending in the transverse direction at a predetermined interval.
  Each pair of adjacent region setting slits may be formed of a region defining slit portion that defines a plurality of the regions to be the electrode portions, and a connecting slit portion for connecting the regions.
[0023]
Prior to the placement of the semiconductor chip on the conductive plate member, a concave groove extending in parallel with the slit is formed on the other surface of the conductive plate member. After the electrode member is formed, a terminal member for forming the terminal portion can be coupled to the concave groove portions.
The concave groove may be formed by a deformed portion formed on the conductive plate member by press working and extending along the slit, and in this case, the concave groove is formed by the conductive plate member. It is comprised by the concave surface prescribed | regulated to the said other surface.
The width dimension of the concave groove can be increased as the distance from the bottom surface of the groove increases.
By the deforming portion, a convex surface corresponding to the concave groove can be formed on the one surface of the conductive plate member.
[0024]
Prior to the placement of the semiconductor chip on the conductive plate member, a deformed portion that extends in parallel with the slit can be formed in the conductive plate member by pressing. The deformable portion defines a convex surface on the other surface. The convex surface may have a trapezoidal cross-sectional shape that gradually decreases its width dimension toward the top.
[0025]
DETAILED DESCRIPTION OF THE INVENTION
The present invention will be described below with reference to the illustrated embodiments.
<Specific example 1>
FIG. 1A to FIG. 1C show a manufacturing process of a semiconductor device 10 according to the present invention. FIG. 1A to FIG. 1C show a manufacturing process of the semiconductor device 10 having connection terminals arranged in a grid pattern such as a BGA.
[0026]
As shown in FIG. 1A, one of the conductive plate members 11 such as an alloy mainly composed of copper having a thickness dimension of 300 μm or a 42 alloy formed of iron and nickel, for example. The semiconductor chip 12 disposed on the surface of the semiconductor chip 12 and the bonding wire 14 extending from the connection portion 13 of the semiconductor chip 12 are sealed by a resin member 15 formed by a conventionally well-known method such as transfer molding. Yes. As is well known in the art, the semiconductor chip 12 is composed of a semiconductor crystal substrate in which an integrated circuit is incorporated. Each end of the bonding wire 14 is connected to a corresponding connection end.
[0027]
As shown in FIG. 2, a plurality of grooves 16 are formed on the one surface of the conductive plate member 11 with a predetermined depth so that a plurality of grooves 16 extend in a lattice pattern using a cutting means such as saw cut. It is formed with a size. The grooves 16 divide the areas 17a for electrode members arranged in a grid pattern. The groove 16 is formed by a first groove formed in parallel to each other in a predetermined direction and a second groove orthogonal to the first groove.
It is desirable that the depth dimension of the groove 16 is not less than ½ of the thickness dimension of the conductive plate member 11. In the illustrated example, each groove 16 has a substantially uniform depth dimension. For example, it is formed with a depth of 200 μm.
The groove 16 can be appropriately formed by using means such as etching, for example, instead of the cutting process using the saw cut.
[0028]
As shown in FIG. 3, the semiconductor chip 12 is disposed and fixed at the center of the area 17 a arranged in a lattice pattern by the grooves 16. Among the areas 17 a, the bonding wires extending from the connection portion 13 are arranged in the area 17 a around the area 17 a located in the central portion and corresponding to the connection portion 13 of the semiconductor chip 12. 14 tips are connected.
[0029]
After sealing the semiconductor chip 12 and the bonding wire 14 with the resin member 15 on the conductive plate member 11 as shown in FIG. 1A, as shown in FIG. The other surface of the conductive plate member 11 exposed from the resin member 15 is polished, for example. By this polishing, the oxide film grown on the other surface of the conductive plate member 11 due to heat at the time of molding the resin member 15 is removed.
For example, mechanical polishing or chemical mechanical polishing is performed until the plurality of grooves arranged in a lattice pattern are exposed from the other surface of the conductive plate member 11 exposed from the bottom surface of the resin member 15. In the example shown in the figure, a thickness dimension of 100 μm is polished. Thereby, the area 17a for the electrode member formed on the conductive plate member 11 is electrically separated, and each electrode member 17 is formed.
[0030]
The polishing is stopped after confirming that the plurality of grooves arranged in a lattice pattern on the conductive plate member 11 are exposed. That is, the above polishing is stopped with a margin of a depth of 200 μm until the resin member 15 is reached. By stopping the polishing, it is possible to reliably prevent the resin member 15 from being polished, so that the semiconductor chip 12 and the bonding wire 14 covered by the resin member 15 are not damaged.
[0031]
Instead of polishing to the depth reaching the groove from the other surface of the conductive plate member 11, it is conceivable to form each electrode member 17 using a cutting device such as a saw cut. That is, each electrode member 17 can be formed by forming a new groove from the portion corresponding to the groove 16 formed on one surface of the conductive plate member 11 until reaching the groove 16. However, if the cutting position deviates from the position of the groove formed on the one surface, the semiconductor chip 12 and the bonding wire 14 may be damaged by the cutting.
[0032]
On the other hand, according to the polishing means according to the present invention, the other surface of the conductive plate member 11 is polished almost evenly, the exposure of the groove 16 is confirmed, and polishing is terminated. The respective electrode members 17 are formed by electrically separating the areas 17a for the respective electrode members while leaving a margin of the groove depth. Therefore, in the present invention, each electrode member 17 is formed without damaging the semiconductor chip 12 and the bonding wire 14 covered with the resin member 15.
[0033]
After the formation of each electrode member 17, as shown in FIG. 1C, the bonding surface that has been polished during the formation of each electrode member 17 by a well-known method such as solder screen printing. A bonding layer 18 made of, for example, solder paste is formed as a terminal member on 17b. If necessary, the terminal member 18 is formed as a dummy on the electrode member 17 that is not electrically joined to the semiconductor chip 12.
[0034]
As described above, the bonding surface 17b of the electrode member on which the terminal member is formed has an oxide film grown by heat when the resin member 15 is formed by polishing when the electrode member 17 is formed. Since it is removed in advance, the terminal member 18 can be coupled to the bonding surface 17b of the electrode member without requiring a step of removing the oxide film.
If necessary, as shown in FIG. 4, instead of the bonding layer 18, a spherical ball 19 made of, for example, conductive resin or solder is used with a well-known flux. And coupled to the joint surface 17b of the electrode member 17.
[0035]
According to the above-described manufacturing method according to the present invention, after the areas 17a for the respective electrode members are formed by the plurality of grooves 16 on one surface of the conductive plate member 11, the one surface is formed on the one surface. After the semiconductor chip 12 and the bonding wire 14 are arranged and sealed by the resin member 15, the other surface of the conductive plate member 11 exposed on the bottom surface of the resin member 15 has a groove from the surface. Polished until exposed. By the above polishing, the areas 17a for the respective electrode members formed in the conductive plate member 11 are electrically separated without reaching the resin member 15, and the respective electrode members 17 are formed. Therefore, the electrode members 17 are formed without damaging the semiconductor chip 12 and the bonding wires 14 covered with the resin member 15, and the terminal members 18 or 18 are formed on the bonding surfaces 17 b of the electrode members 17. The semiconductor device 10 to which 19 is coupled can be formed.
[0036]
Furthermore, according to the above-described manufacturing method according to the present invention, the joint surface 17b of the electrode member 17 is grown by heat at the time of forming the resin member 15 by polishing when the electrode members 17 are formed. Since the oxide film is removed in advance, the semiconductor device 10 in which the terminal member is coupled to the bonding surface 17b can be formed without requiring a special process for removing the oxide film.
[0037]
<Specific example 2>
In Specific Example 1 shown in FIGS. 1A to 1C, an example of a method for manufacturing the semiconductor device 10 in which each electrode member 17 is formed on the bottom surface of the semiconductor chip 12 covered with the resin member 15 is shown. . Next, as shown in FIGS. 5A to 5C, another manufacturing method of the semiconductor device 10 in which the bottom surface of the semiconductor chip 12 covered with the resin member 15 is exposed to the atmosphere will be described.
[0038]
A recess is formed at a predetermined position on one surface of the conductive plate member 11 where the semiconductor chip 12 is disposed, and the semiconductor chip 12 in the recess is formed from the other surface of the conductive plate member 11. Is substantially the same as Example 1 except that polishing is performed until the surface is exposed.
As shown in FIG. 5A, the semiconductor chip 12 disposed on one surface of the conductive plate member 11 and the bonding wire extending from the terminal member 13 of the semiconductor chip 12 as described above. 14 is sealed with a resin member 15.
[0039]
On the one surface of the conductive plate member 11, as shown in FIG. 6, an area 17 a for each electrode member is formed by a plurality of grooves 16 formed in a lattice shape. A recess 200 for receiving the semiconductor chip 12 is formed in a portion located substantially at the center of the conductive plate member 11 by a well-known method such as etching, and has the same depth as the plurality of grooves 16. It is formed to become.
[0040]
On one surface of the conductive plate member in which the plurality of grooves 16 and the recesses 200 are formed, the semiconductor chip 12 is disposed in the recesses 200 as shown in FIG. As in the first specific example, the connection portion 13 is fixed and connected to the corresponding area 17a for each electrode member via the bonding wire 14.
[0041]
As shown in FIG. 5A, after the semiconductor chip 12 and the bonding wire 14 are sealed with the resin member 15 on the conductive plate member 11, as shown in FIG. 5B. Similarly to Example 1 described above, the other surface of the conductive plate member 11 exposed from the resin member 15 is polished until the plurality of grooves 16 are exposed from the surface.
As a result, the semiconductor chip 12 arranged with the bottom surface substantially coincided with the depth level substantially the same as the groove is exposed to the atmosphere, and further, the area for the electrode member formed in the conductive plate member 11 17a is electrically separated to form each electrode member 17.
[0042]
The above-described polishing for forming each electrode member 17 is stopped after confirming that the groove is exposed, as in the first specific example. Accordingly, as in the first specific example, since the above-described polishing is reliably prevented from reaching the resin member 15, the semiconductor chip 12 and the bonding wire 14 covered with the resin member 15 are damaged. The electrode members 17 can be formed without any problem. Further, as described above, this polishing removes an oxide film grown on the other surface of the conductive plate member 11 due to heat at the time of molding of the resin member 15, so that it is the same as in the specific example 1. In addition, it is possible to form the joint surface 17b suitable for the solder joint of the terminal member 18 or 19.
[0043]
After each electrode member 17 is formed, as shown in FIG. 5C, a bonding layer 18 is formed as a terminal member on the bonding surface 17b subjected to the polishing of the electrode member 17.
By polishing when the electrode members 17 are formed, the oxide film is removed, and the joining surface 17b suitable for melting the solder is formed. Therefore, a special process for removing the oxide film is required. The terminal member can be coupled to the joint surface 17b without any problem.
If necessary, as shown in FIG. 8, instead of the terminal member such as the coupling layer 18, a spherical ball 19 such as a conductive resin or solder has been well known. By the method, it is joined to the joint surface 17b of each electrode member 17.
[0044]
In the specific example 2 described above, the depth dimension of the groove 16 formed on one surface of the conductive plate member and the depth dimension of the recess 200 in which the semiconductor chip 12 is disposed are set to substantially the same depth dimension. The method of forming and forming each electrode member 17 has been described.
Instead, the depth dimension of the recess can be made smaller than the depth dimension of the plurality of grooves 16. In the polishing operation at that time, after the groove 16 is exposed, the recess 200 is exposed by the subsequent polishing operation. After confirming that the bottom surface of the semiconductor chip 12 is exposed in the recess by the exposure of the recess 200, the polishing is stopped. When the polishing is stopped, each electrode member 17 is already electrically separated due to the presence of the groove 16 deeper than the depth dimension of the recess 200, so that the inside of the resin member 15 is the same as described above. The electrode members 17 can be formed without damaging the members 12 and 14.
[0045]
Therefore, according to the manufacturing method of the second specific example of the present invention, the electrode member 17 is formed by the same polishing as in the first specific example. Therefore, the semiconductor chip 12 covered with the resin member 15 and The semiconductor device 10 including connection terminals in which terminal members 18 or 19 are coupled to the electrode members 17 arranged in a grid pattern without damaging the bonding wires 14 can be formed.
[0046]
In addition, due to the polishing when each electrode member 17 is formed, the oxide film grown on the bonding surface 17b of the electrode member 17 by the heat at the time of forming the resin member 15 is removed in advance. The semiconductor device 10 in which the terminal member is coupled to the joint surface 17b can be formed without requiring a special process for removing the substrate.
Furthermore, since the bottom surface of the semiconductor chip 12 covered with the resin member is exposed to the atmosphere, the semiconductor device 10 formed by the above manufacturing method directly releases the heat generated by the semiconductor chip to the atmosphere. can do.
[0047]
<Specific example 3>
9 to 13 show manufacturing steps of Example 3 according to the present invention. In the method of the specific example 3, unlike the above-described specific example 1 and specific example 2 in which the conductive plate member is formed with grooves in two vertical and horizontal directions, the conductive plate member 11 extends in one direction parallel to each other. A plurality of slits 20 are formed.
[0048]
As shown in FIG. 9, the conductive plate member 11 having a thickness of, for example, 100 μm extends in parallel to each other at a predetermined interval, for example, along the longitudinal direction of the plate member 11. A slit 20 is formed. Each slit 20 penetrates from one surface of the conductive plate member to the other surface. The slit 20 can be formed by, for example, cutting such as saw cutting, punching pressing, etching, or the like. In the example shown in the specific example 3, the edge of each slit 20 is an upright edge, as shown in FIG.
[0049]
As shown in FIG. 10, each connection portion 13 similar to the above is provided in the central portion which is a predetermined position on one surface of the conductive plate member 11 in which the slit 20 is formed. The semiconductor chip 12 is disposed and fixed by a well-known method. Each connection portion 13 is electrically connected to each portion between the slits of the conductive plate member 11 corresponding to the connection portion 13 via a bonding wire 14.
[0050]
As shown in FIG. 11, the semiconductor chip 12 disposed on one surface of the conductive plate member 11 and the bonding wires 14 extending from the terminal members 13 of the chip 12 as described above. Are sealed by the resin member 15.
[0051]
After sealing with the resin member 15, the other surface of the conductive plate member 11 has a lateral direction of the conductive plate member 11, that is, a direction crossing the slit 20 as shown in FIG. 12. The plurality of dividing grooves 21 are formed in parallel with each other by a cutting means such as saw cut. Each dividing groove 21 reaches the one surface of the conductive plate member to divide each portion described above between the slits 20 of the conductive plate member 11 in the extending direction of the slit 20.
The slit 20 is jointly formed by a plurality of the slits 20 formed along the longitudinal direction of the conductive plate member 11 and a plurality of the dividing grooves 21 formed along the lateral direction of the conductive plate member. Each electrode member 17 is formed in each region of the conductive plate member 11 surrounded by the dividing groove 21.
[0052]
As shown in FIG. 13, a bonding layer 18 made of, for example, conductive resin or solder is bonded to each electrode member 17 to the bonding surface 17b of the electrode member 17 by a well-known method. Is done.
[0053]
In the manufacturing method of the specific example 3 described above, the slit 20 is formed in the conductive plate member 11 along the longitudinal direction of the conductive plate member 11 prior to the resin sealing. In order to form each electrode member 17 from the conductive plate member 11, it is not necessary to perform a cutting process along the vertical direction and the horizontal direction of the conductive plate member as in the prior art. That is, after the above-described resin sealing, the conductive plate member 11 is divided into the electrode members 17 by dividing the conductive plate member 11 along the lateral direction of the member.
[0054]
The groove 21 for cutting can be appropriately formed by using other means such as etching or drill drilling to be described later, instead of the cutting process using the saw cut.
[0055]
After the formation of each electrode member 17, instead of providing a bonding layer 18 on the bonding surface 17b of each electrode member 17 exposed from the bottom surface of the resin member 15, as shown in FIG. As a result, a spherical ball 19 can be formed.
[0056]
According to the manufacturing method of the third specific example of the present invention, the plurality of slits 20 described above are formed in the conductive plate member 11 along the vertical direction of the member prior to the resin sealing. After the resin sealing described above, the plurality of dividing grooves 21 are formed in the conductive plate member 11 along the lateral direction of the member, so that the slits 20 and the dividing grooves 21 are formed. Each electrode member 17 is formed in each region of the conductive plate member 11 surrounded by. Therefore, in comparison with the prior art in which the resin member 15 seals each member such as the semiconductor chip 12 and the bonding wire 14 and then cuts the conductive plate member 11 in the vertical and horizontal directions, the sealing is performed. Since each of the stopped members can be reduced to half the probability of being damaged by the dividing process, the possibility that they are damaged by the dividing process is reduced.
[0057]
<Specific Example 4>
FIGS. 15-18 shows the manufacturing process of the specific example 4 which concerns on this invention. Example 4 is the same as Example 3 except for the process of forming the slit 20.
[0058]
As shown in FIG. 15, slits extending in parallel to each other at a predetermined interval, for example, along the longitudinal direction of the plate member 11, for example, in the conductive plate member 11 having a thickness of 100 μm. 22 is formed. Each slit 22 penetrates from one surface of the conductive plate member 11 on which the semiconductor chip 12 is disposed to the other surface, as in the third specific example.
However, in the specific example 4, as shown in FIG. 16, the width dimension of the slit 22 formed in the conductive plate member 11 is set along the plate thickness direction of the conductive plate member 11. The plate member 11 is formed so as to gradually increase from the one surface to the other surface. The slit 22 can be formed by, for example, etching and cutting using a blade for forming the edge of the slit 22 in the shape described above.
[0059]
Although not shown in the figure, each connection similar to that described above is provided at the central portion, which is a predetermined position on the one surface of the conductive plate member 11 where the narrow opening of the slit 22 is opened, as shown in FIG. The semiconductor chip 12 provided with the portion 13 is arranged and fixed by a well-known method. Each connection portion 13 is electrically connected to each portion between the slits of the conductive plate member 11 corresponding to the connection portion 13 via a bonding wire 14.
[0060]
Further, although not shown, the semiconductor chip 12 disposed on one surface of the conductive plate member 11 and the bonding wires 14 extending from the terminal members 13 of the chip 12, as shown in FIG. 11. Are sealed by the resin member 15. As shown in FIG. 17 described later, the resin member 15 is sealed in the slit 22 in accordance with the shape of the edge of the slit 22.
[0061]
After sealing with the resin member 15, on the other surface of the conductive plate member 11, as shown in FIG. 12, along the horizontal direction of the conductive plate member 11, that is, the direction crossing the slit 22, For example, a plurality of dividing grooves 21 similar to those described above are formed in parallel to each other by a cutting means such as a saw cut. Each dividing groove 21 divides each portion described above between the slits 22 of the conductive plate member 11 in the extending direction of the slit 22 by reaching the one surface of the conductive member.
The slits 22 are jointly formed by the plurality of slits 22 formed along the longitudinal direction of the conductive plate member 11 and the plurality of dividing grooves 21 formed along the lateral direction of the conductive plate member. As shown in FIG. 17, each electrode member 17 is formed in each region of the conductive plate member 11 surrounded by the dividing groove 21.
[0062]
After the formation of each electrode member 17, a bonding layer 18 similar to that described in the specific example 3 is formed on the bonding surface 17 b of each electrode member 17 exposed from the bottom surface of the resin member 15.
[0063]
In Specific Example 4, as shown in FIG. 17, each groove 22 gradually decreases from one surface of the electrode member 17 to the other surface along the plate thickness direction of the electrode member 17. Both edges of each electrode member 17 constituted by the edges of each groove 22 are inclined in a direction away from one surface of the electrode member 17 connected to the bonding wire 14 to the other surface. . Accordingly, each electrode member 17 is given an inverted trapezoidal cross-sectional shape as seen in the cross section shown in FIG. As a result, the resin member 15 that seals between the slits 22 is formed so as to gradually increase along the plate thickness direction of the electrode member 17 from the one surface of the electrode member 17 to the other surface. .
As a result, the resin member 15 has a cross-section as seen in FIG. The electrode member 17 is formed to have a trapezoidal shape that gradually increases along the plate thickness direction toward the surface.
[0064]
In the manufacturing method of the specific example 4, as in the example shown in the specific example 3, in order to form each electrode member 17 from the conductive plate member 11 after the resin sealing, There is no need to perform cutting along the vertical direction and the horizontal direction of the conductive plate member, and after the above-described resin sealing, by cutting the conductive plate member 11 along the horizontal direction of the member, The conductive plate member 11 can be divided into the electrode members 17.
[0065]
Further, the resin member 15 sealed between the slits 22 extends from the other surface of the conductive plate member 11 to the one surface so as to match the shape of the slit 22. 11 is formed in a trapezoidal shape that gradually decreases along the plate thickness direction, and the resin member 15 is formed so as to cover the edge of each electrode member 17. Therefore, the resin member 15 has an action of preventing the electrode members 17 from being peeled off from the resin member 15. Therefore, each electrode member 17 can be reliably coupled to the resin member 15.
[0066]
After forming each electrode member 17, instead of providing a bonding layer 18 on the bonding surface 17 b of each electrode member 17 exposed from the bottom surface of the resin member 15, as shown in FIG. As described above, the same ball 19 as described above can be coupled to the joint surface 17 b of the electrode member 17.
[0067]
<Specific example 5>
FIGS. 19-21 shows the manufacturing process of the specific example 5 which concerns on this invention. Example 5 is the same as Example 3 except for the process of forming the slit 20.
[0068]
As shown in FIG. 19, slits extending in parallel to each other at a predetermined interval along the longitudinal direction of the plate member 11, for example, in the conductive plate member 11 having a thickness of 100 μm, for example. 23 is formed. Each slit 23 has a vertical edge along the thickness direction of the plate member 11 as in the specific example 3, and one surface of the conductive plate member 11 on which the semiconductor chip 12 is disposed. To the other surface.
[0069]
In the fifth specific example, the plurality of slits 23 have extending portions 23a that extend in the direction in which they approach each other toward the adjacent slits 23 with a predetermined interval in the extending direction of the slits 23. The extending ends of the extending part 23a are formed at a predetermined interval from each other.
Each of the slits 23 described above is collectively formed using, for example, photolithography and etching techniques. By using the above-described photolithography and etching technique for forming the slit 23, the slit 23 for defining the electrode member 17 similar to the above-described specific example is formed in the vertical direction and the horizontal direction on the conductive plate member 11. The direction can be formed with a predetermined high accuracy.
[0070]
The slits 23 can be formed by a punching press that enables high-precision processing instead of the above-described etching.
[0071]
As shown in FIG. 20, a rectangular area 24 is defined between the slits 23 by the slits 23 and their extending portions 23a. A semiconductor chip 12 similar to that described above is disposed in the central portion of the conductive plate member 11, and each connection portion 13 thereof is electrically connected to each predetermined rectangular region 24 via a bonding wire 14. Is done.
[0072]
Thereafter, although not shown, the semiconductor chip 12 disposed on the conductive plate member 11 and the bonding wires 14 extending from the connection portions 13 of the chip 12 are the same resin members as shown in FIG. 15 is sealed.
[0073]
After the above-described sealing by the resin member 15, the above-described extension portion of the slit 23 of the conductive plate member 11 is formed on the other surface, which is the back surface of the conductive plate member 11, as shown in FIG. 12. A plurality of dividing grooves 21 similar to those described above are formed in parallel with each other along a cutting means such as a saw cut along 23a. Each dividing groove 21 divides each area 24 between the slits 23 of the conductive plate member 11 in the extending direction of the slits 23 by reaching the one surface of the conductive member. As a result, each electrode member 17 is formed in each region 24 of the divided conductive plate member 11.
In place of the dividing groove 21, as shown in FIG. 21, a dividing hole 25 for removing a space between the extending ends of the extending portions 23a of the plurality of slits 23 facing each other can be formed. The dividing hole 25 is formed by a drilling means using, for example, a drill or a laser.
[0074]
After the formation of each electrode member 17, the bonding layer 18 or the ball 19 similar to that described in the specific example 3 is formed on the bonding surface 17 b of each electrode member 17 exposed from the bottom surface of the resin member 15.
[0075]
In the manufacturing method of the specific example 5 described above, as in the example shown in the specific example 3, in order to form each electrode member 17 from the conductive plate member 11 after the resin sealing, There is no need to perform cutting along the vertical direction and the horizontal direction of the conductive plate member, and after the above-described resin sealing, by cutting the conductive plate member 11 along the horizontal direction of the member, Each electrode member 17 can be formed from the conductive plate member 11.
[0076]
Further, the vertical dimension and the horizontal dimension of each region 24 for each electrode member 17 are defined by each slit 23 and each extending portion 23a, and basically the processing accuracy of the above-described cutting means or punching means is increased. Since it does not depend, each electrode member 17 can be formed with high accuracy determined by the formation accuracy of the slit 23.
[0077]
Instead of the vertical edge portion described above, the edge portion including the elongated portion 23a of the slit 23 can be an inclined edge portion similar to that shown in the specific example 4.
[0078]
<Specific Example 6>
22 and 23 show a manufacturing process of the specific example 6 according to the present invention. Example 6 is the same as Example 5 except for the process of forming the slit 23.
[0079]
As shown in FIG. 22, slits extending in parallel with each other at a predetermined interval along the longitudinal direction of the plate member 11, for example, in the conductive plate member 11 having a thickness of 100 μm, for example. 26 is formed. Each slit 26 penetrates from one surface of the conductive plate member 11 on which the semiconductor chip 12 is disposed to the other surface, as in the fifth specific example.
[0080]
Unlike the slit 23 having the elongated portion in the fifth specific example, in the sixth specific example, the opposing edges of the pair of adjacent slits of the plurality of slits 26 extend along the edge at positions corresponding to each other. And a plurality of straight line portions 26a formed at a predetermined interval, and a concave curve portion 26b continuous with the straight line portion 26a between the straight line portions. The substantially circular regions 27 are defined in alignment with the entire conductive plate member 11 by the concave curved portions 26b of the slit 26 facing each other.
[0081]
Each slit 26 described above is formed in a lump using, for example, photolithography and etching techniques, as in the fifth specific example. By using the photolithography and etching techniques described above for forming the slit 26, the slit 26 for defining the circular region 27 can be formed with a predetermined high accuracy.
[0082]
The slit 26 can be formed by a punching press that enables high-precision processing in place of the above-described etching.
[0083]
As shown in FIG. 23, a semiconductor chip 12 similar to that described above is disposed at the center of the conductive plate member 11 in which a circular region 27 is defined as a whole. The predetermined circular regions are electrically connected via bonding wires 14.
[0084]
Thereafter, although not shown, the semiconductor chip 12 disposed on the conductive plate member 11 and the bonding wires 14 extending from the connection portions 13 of the chip 12 are sealed by the resin member 15 similar to the above. Stopped.
Further, after the sealing by the resin member 15, the straight portions 26 a are formed in the conductive plate member 11 so that a plurality of dividing grooves 21 similar to those described above are formed in parallel with each other by cutting means such as saw cut. Formed with. In the same manner as described above, each divided groove 21 forms a circular electrode member 17 in each region 27 of the divided conductive plate member 11.
Instead of the dividing groove 21, a dividing hole 25 can be formed in the same manner as in the specific example 5.
[0085]
After the formation of each electrode member 17, a bonding layer 18 or a ball 19 similar to the above is formed on the joint surface of each circular electrode member 17 exposed from the bottom surface of the resin member 15 as a terminal portion (not shown). The
Since the joining surface of the electrode member 17 is circular, the rounded bonding layer 18 can be easily formed on the joining surface using the circular shape. When the spherical ball 19 is bonded to the bonding surface instead of the bonding layer 18, the melting of the ball 19 can be easily controlled by utilizing the circular shape of the bonding surface. The ball 19 can be easily coupled to the joint surface.
[0086]
In the manufacturing method of the specific example 6 described above, in the same manner as in the specific example described above, in order to form each electrode member 17 from the conductive plate member 11 after the resin sealing, the conventional conductive plate There is no need to perform cutting along the vertical and horizontal directions of the member, and after conducting the resin sealing, the conductive plate member 11 is cut along the horizontal direction of the member so that the conductive property is reduced. Each electrode member 17 can be formed from the plate member 11.
[0087]
Further, each region 27 for each electrode member 17 is defined by each slit 26 and basically does not depend on the processing accuracy of the above-described cutting means or punching means. Each electrode member 17 can be formed with accuracy.
[0088]
Further, since the terminal portions such as the rounded coupling layer and the spherical ball can be easily formed on the circular joint surface of the electrode member 17 by using the circular shape, the dimension of the terminal portion is determined. Can improve the accuracy.
[0089]
<Specific example 7>
24 to 26 show a manufacturing process of the seventh specific example according to the present invention. In Specific Example 7, in addition to the slit 20, a concave groove 28 is formed between the slits in the conductive plate member 11.
[0090]
As shown in FIG. 24, the linear slit 20 defined by a pair of vertical straight edges facing each other is formed in the conductive plate member 11 having a thickness of, for example, 100 μm, as described above. In this way, for example, the plate members 11 are formed to extend in parallel with each other at a predetermined interval along the longitudinal direction of the plate member 11. Each slit 20 penetrates from the one surface of the conductive plate member 11 on which the semiconductor chip 12 is disposed to the other surface in the same manner as in each of the slits described above. Further, a concave groove 28 extending in parallel with the slit 20 is formed between the slits 20 on the other surface of the conductive plate member 11.
[0091]
As shown in FIG. 25, each concave groove 28 has a rectangular cross-sectional shape defined by a predetermined width dimension and a predetermined depth dimension. The concave groove 28 can be formed by, for example, cutting and etching, and is preferably formed simultaneously with the formation of the slit 20.
[0092]
Thereafter, as shown in FIG. 26, a semiconductor chip 12 similar to that described above is disposed in the central portion of the conductive plate member 11, and each of the connection portions 13 and each of the predetermined regions are provided. After being electrically connected via the bonding wire 14, it is sealed with the resin member 15 similar to that described above.
Further, after the sealing by the resin member 15, the same plurality of dividing grooves 21 as described above are formed in parallel with each other by the cutting means such as saw cut similar to the above, and the conductive plate member 11 has the above-described It is formed on the surface where the concave groove 28 is formed. Each electrode member 17 is formed in each region of the divided conductive plate member 11 by the dividing groove 21 in the same manner as described above. The concave groove 28 is exposed on the joint surface exposed from the bottom surface of the resin member 15 in each electrode member 17.
[0093]
After the formation of each electrode member 17, as shown in FIG. 26, the same ball 19 as described above is coupled to the joint surface having the concave groove 28 as a terminal portion.
The concave groove 28 is formed on the joint surface of the electrode member 17, and the ball 19 is held by the concave groove 28 when the above-described ball 19 is coupled. Therefore, the ball connected to the joint surface 19 can be easily positioned. In addition, since a part of the ball 19 is accommodated in the concave groove 28, the bonding area between the ball 19 and the electrode member 17 can be increased, whereby both can be firmly bonded.
[0094]
As the concave groove 28, a groove having a desired cross-sectional shape such as a V-shaped groove opened on the other surface can be applied instead of the above-described shape.
[0095]
In the manufacturing method of the specific example 6 described above, in the same manner as in the specific example described above, in order to form each electrode member 17 from the conductive plate member 11 after the resin sealing, the conventional conductive plate There is no need to perform cutting along the vertical and horizontal directions of the member, and after conducting the resin sealing, the conductive plate member 11 is cut along the horizontal direction of the member so that the conductive property is reduced. Each electrode member 17 can be formed from the plate member 11.
[0096]
Moreover, in the specific example 7, the above-described concave groove is formed on the joint surface to which the ball 19 of the electrode member 17 is coupled. Accordingly, when the ball 19 is coupled to the electrode member 17, it is easy to accurately position the ball 19 using the concave groove 28 of the joint surface, and thus the placement accuracy of the terminal portion 19 is increased. be able to. Furthermore, since the area where the ball 19 and the concave groove 28 of the electrode member 17 are in contact with each other increases, the ball 19 can be reliably coupled to the electrode member 17.
[0097]
<Specific example 8>
27-29 show the manufacturing process of Example 8 according to the present invention.
The concave groove 28 between the slits 20 formed in the conductive plate member 11 can be formed by pressing. In the press working, a deformed portion 29 that continuously extends along the slits 20 is formed between the slits 20 of the conductive plate member 11. The deformable portion defines a convex surface 30 on the one surface of the conductive plate member 11 and a concave surface 28 corresponding to the convex surface 30 on the other surface. This concave surface 28 is used as the aforementioned concave groove. Therefore, by forming the concave groove 28 by pressing, the concave groove 28 similar to that described in the specific example 7 is formed on the other surface of the conductive plate member 11 as shown in FIG. Are formed on the one surface of the conductive plate member 11 at the same time so as to correspond to the grooves 28 and extend parallel to each other.
[0098]
As shown in FIG. 28, the convex surface 30 defined on the one surface of the conductive plate member 11 by the deformable portion 29 has a trapezoidal shape in which the width dimension gradually decreases toward the top when viewed in cross section. The concave portion defined by the other surface, that is, the concave groove 28 has an inclined side surface corresponding to the convex surface 30. Each of the deformable portions 29 can be formed at a time by pressing, and is preferably formed simultaneously with the formation of the slit 20.
[0099]
After that, as shown in FIG. 29, a semiconductor chip 12 similar to that described above is disposed at the center of the surface of the conductive plate member 11 on which the convex surface 30 is formed, and each connection portion 13 thereof. Are electrically connected to each other through the bonding wire 14 and then sealed with the resin member 15 similar to that described above.
Since the convex surface 30 is formed on the one surface of the conductive plate member 11, the resin member 15 is formed along the shape of the convex surface 30. Therefore, according to the shape of the convex surface 30 described above, the area where the resin member 15 and the convex surface 30 are in contact can be increased in accordance with the dimension protruding from the one surface of the conductive plate member 11.
[0100]
Further, after the sealing by the resin member 15, the same plurality of dividing grooves 21 as described above are formed in parallel with each other by the cutting means such as saw cut similar to the above, and the conductive plate member 11 has the above-described It is formed on the other surface. Each electrode member 17 is formed in each region of the divided conductive plate member 11 by the dividing groove 21 in the same manner as described above. The concave groove 28 formed by press working is exposed on the joint surface exposed from the bottom surface of the resin member 15 in each electrode member 17.
[0101]
After the formation of each electrode member 17, as shown in FIG. 29, the ball 19 similar to that described above is coupled to the joint surface having the concave groove 28 as a terminal portion.
The concave groove 28 is formed on the joint surface of the electrode member 17, and the ball 19 is held by the concave groove 28 when the above-described ball 19 is coupled. Therefore, the ball connected to the joint surface 19 can be easily positioned. In addition, since a part of the ball 19 is accommodated in the concave groove 28, the bonding area between the ball 19 and the electrode member 17 can be increased, whereby both can be firmly bonded.
[0102]
In the manufacturing method of the specific example 8 described above, the conductive plate as in the prior art is used to form each electrode member 17 from the conductive plate member 11 after the resin sealing, as in the specific example described above. There is no need to perform cutting along the vertical and horizontal directions of the member, and after conducting the resin sealing, the conductive plate member 11 is cut along the horizontal direction of the member so that the conductive property is reduced. Each electrode member 17 can be formed from the plate member 11.
[0103]
Further, the concave groove 28 described above is formed by press working on the joint surface of the electrode member 17 to which the ball 19 is coupled. Accordingly, when the ball 19 is coupled to the electrode member 17, accurate positioning of the ball 19 is facilitated by using the concave groove 28 of the joint surface. Can be increased. Furthermore, since the area where the ball 19 and the concave groove 28 of the electrode member 17 are in contact with each other increases, the ball 19 can be reliably coupled to the electrode member 17.
[0104]
Furthermore, in Example 8, when the concave groove 28 is formed on the other surface of the conductive plate member 11, the convex surface 30 corresponding to the concave groove 28 is the one side of the conductive plate member 11. Formed on the surface. The area where the conductive plate member 11 formed with the convex surface 30 is in contact with the resin member 15 increases according to the protruding amount of the convex surface 30 protruding on the one surface. The conductive plate member 11 can be securely coupled.
[0105]
<Specific example 9>
30-32 shows the manufacturing process of the specific example 9 which concerns on this invention. Example 9 is the same as Example 8 except for the process of forming the deformed portion 29.
[0106]
As shown in FIG. 30, a deformed portion 31 that continuously extends along the slit 20 is formed by press working between the slits 20 of the conductive plate member 11. Although the deformed portion 29 of the specific example 8 defines the convex surface 30 on the one surface of the conductive plate member 11, the deformed portion 31 of the specific example 9 is replaced with the conductive plate member 11. A convex surface 32 is defined on the other surface, and a concave surface 33 corresponding to the convex surface 32 is defined on the one surface.
[0107]
As shown in FIG. 31, on the other surface of the conductive plate member 11, trapezoidal convex surfaces 32 similar to the convex surface 30 are formed between the slits 20 in parallel with each other. A concave surface 33 having a shape corresponding to the convex surface 32 is formed on the one surface.
[0108]
After that, as shown in FIG. 32, the semiconductor chip 12 similar to that described above is disposed at the center of the surface of the conductive plate member 11 where the concave surface 33 is formed, and each connection portion 13 thereof. Are electrically connected to each other through the bonding wire 14 and then sealed with the resin member 15 similar to that described above.
[0109]
Since the concave surface 33 is formed on one surface of the conductive plate member 11, the resin member 15 is formed along the shape of the concave surface 33. Therefore, according to the shape of the concave surface 33 described above, the area where the resin member 15 and the concave surface 33 are in contact can be increased in accordance with the dimension protruding from the one surface of the conductive plate member 11.
[0110]
Further, after the sealing by the resin member 15, the same plurality of dividing grooves 21 as described above are formed in parallel with each other by the cutting means such as saw cut similar to the above, and the conductive plate member 11 has the above-described It is formed on the other surface. Each electrode member 17 is formed in each region of the divided conductive plate member 11 by the dividing groove 21 in the same manner as described above. Since the convex surface 32 formed by press working is exposed as a terminal portion on the joint surface of each electrode member 17 exposed from the bottom surface of the resin member 15, the bonding layer as a terminal portion is exposed on each joint surface. 18 or the solder balls 19 need not be formed.
[0111]
In the manufacturing method of the specific example 8 described above, the conductive plate as in the prior art is used to form each electrode member 17 from the conductive plate member 11 after the resin sealing, as in the specific example described above. There is no need to perform cutting along the vertical and horizontal directions of the member, and after conducting the resin sealing, the conductive plate member 11 is cut along the horizontal direction of the member so that the conductive property is reduced. Each electrode member 17 can be formed from the plate member 11.
[0112]
Further, when the convex surface 32 is formed on the other surface of the conductive plate member 11, the concave surface 33 corresponding to the convex surface 32 is formed on the one surface of the conductive plate member 11. The area where the conductive plate member 11 formed with the concave surface 33 is in contact with the resin member 15 increases in accordance with the size of the concave surface 33 recessed in the one surface. The conductive plate member 11 can be securely coupled.
[0113]
Furthermore, in Example 9, the convex surface 32 is formed as a terminal portion by the above-described pressing and cutting. Accordingly, since it is not necessary to form the coupling layer 18 or the solder ball 19 as a terminal portion on the joint surface of the electrode member 17, there is a risk of connection failure that may occur when the terminal portion is connected to the connection surface. Can be eliminated.
[0114]
【The invention's effect】
In the manufacturing method according to the present invention, as described above, a plurality of grooves arranged in a grid for each electrode member are formed on one surface of the conductive plate member on which the semiconductor chip and the bonding wire are arranged. After the conductive plate member and each member on the conductive plate member are sealed with the resin member, the other surface of the conductive plate member exposed on the bottom surface of the resin member has a groove from the surface. By polishing until exposed, each electrode member is formed without damaging the semiconductor chip and the bonding wire in the resin member.
Therefore, according to this invention, when each said electrode member is formed, generation | occurrence | production of the inferior goods by damage to each member in the said resin member can be prevented, and improvement of productivity can be aimed at.
[0115]
Furthermore, according to the manufacturing method of the present invention, since each electrode member is formed by a polishing operation, the removal work of the oxide film of the electrode member prior to the soldering of the terminal member can be omitted. Productivity can be improved.
Furthermore, according to the manufacturing method of the present invention, the semiconductor device described above can be manufactured relatively easily.
[0116]
Moreover, according to the manufacturing method according to the present invention, as described above, the conductive plate member is formed with a recess having a depth dimension equal to or less than the depth dimension of the groove formed in the member, By disposing the semiconductor chip in the recess, a semiconductor device in which the bottom surface of the semiconductor chip is exposed to the atmosphere from the resin member can be formed.
Therefore, according to the semiconductor device of the present invention, the heat generated from the semiconductor chip can be directly released to the atmosphere, and thereby the change in electrical characteristics due to thermal energy can be suppressed.
[0117]
According to another manufacturing method of the present invention, as described above, a plurality of slits are formed prior to disposing each member of the semiconductor chip and the bonding wire on one surface of the conductive plate member. After the semiconductor chip and the bonding wire are sealed with the resin member on the conductive plate member formed with the substrate, the region between the slits of the conductive plate member is divided in the extending direction of the slit. Since each electrode member is formed in each region of the divided conductive plate member, the conventional conductive plate member is cut twice in the longitudinal direction and the horizontal direction, for example, in the conventional conductive plate member. There is no need to apply, and only a single cutting step along the direction across the slit is required. Thereby, in the processing step for forming each of the electrode members, the probability that the semiconductor chip, the bonding wire, and the like that are resin-sealed by the cutting process are damaged is reduced to half.
Therefore, according to this invention, when each said electrode member is formed, generation | occurrence | production of the inferior goods by damage to each member in the said resin member can be reduced, and improvement of productivity can be aimed at.
[Brief description of the drawings]
FIG. 1A to FIG. 1C are cross-sectional views showing a method for manufacturing a semiconductor device of Example 1 according to the present invention.
FIG. 2 is a plan view showing a conductive plate member according to the present invention shown in FIG.
FIG. 3 is a plan view showing the relationship between the conductive plate member, the semiconductor chip and the bonding wires according to the present invention shown in FIG.
FIG. 4 is a cross-sectional view showing a semiconductor device in which spherical balls are formed instead of the bonding layer of FIG.
5 (a) to 5 (c) are cross-sectional views showing a method for manufacturing a semiconductor device of Example 2 according to the present invention.
6 is a plan view similar to FIG. 2, showing the conductive plate member shown in FIG. 5 (a). FIG.
7 is a plan view similar to FIG. 3, showing the relationship between the conductive plate member, the semiconductor chip, and the bonding wires shown in FIG. 5 (a).
FIG. 8 is a cross-sectional view showing a semiconductor device in which spherical balls are formed instead of the bonding layer of FIG.
FIG. 9 is a plan view showing a conductive plate member of Example 3 according to the present invention.
FIG. 10 is a plan view of a relationship between a conductive plate member, a semiconductor chip, and a bonding wire of Example 3 according to the present invention as viewed from one surface of the conductive plate member.
FIG. 11 is a plan view of a conductive plate member of Example 3 according to the present invention as viewed from one surface thereof.
FIG. 12 is a plan view of the conductive plate member of Example 3 according to the present invention as seen from the other side.
13 is a cross-sectional view showing a method for manufacturing a semiconductor device according to Example 3 of the present invention. FIG.
14 is a cross-sectional view showing another example of the semiconductor device of the third specific example according to the present invention in which a spherical ball is formed instead of the bonding layer of FIG.
FIG. 15 is a plan view of a conductive plate member of Example 4 according to the present invention as viewed from one surface thereof.
FIG. 16 is a cross-sectional view of a conductive plate member of Example 4 according to the present invention.
FIG. 17 is a cross-sectional view showing a method for manufacturing a semiconductor device according to Example 4 of the present invention.
18 is a cross-sectional view showing another example of the semiconductor device of the specific example 4 according to the present invention in which a spherical ball is formed instead of the bonding layer of FIG. 17;
FIG. 19 is a plan view showing a conductive plate member of Example 5 according to the present invention.
20 is a plan view of the relationship between the conductive plate member, the semiconductor chip, and the bonding wire of Example 5 according to the present invention as viewed from one surface of the conductive plate member. FIG.
FIG. 21 is a plan view of the conductive plate member of Example 5 according to the present invention as seen from the other side.
FIG. 22 is a plan view showing a conductive plate member of Example 6 according to the present invention.
FIG. 23 is a plan view showing the relationship between a conductive plate member, a semiconductor chip, and a bonding wire of Example 6 according to the present invention.
FIG. 24 is a plan view of the conductive plate member of Example 7 according to the present invention as viewed from the other surface of the conductive plate member.
FIG. 25 is a cross-sectional view of a conductive plate member of Example 7 according to the present invention.
FIG. 26 is a cross-sectional view showing the method for manufacturing the semiconductor device according to Example 7 according to the present invention.
FIG. 27 is a plan view of the conductive plate member of Example 8 according to the present invention as seen from one surface thereof.
FIG. 28 is a cross-sectional view of a conductive plate member of Example 8 according to the present invention.
FIG. 29 is a cross-sectional view showing the method for manufacturing the semiconductor device according to Example 8 according to the present invention.
30 is a plan view of a conductive plate member of Example 9 according to the present invention as viewed from one surface of the conductive plate member. FIG.
FIG. 31 is a cross-sectional view of a conductive plate member of Example 9 according to the present invention.
FIG. 32 is a cross-sectional view showing a method for manufacturing a semiconductor device according to Example 9 according to the present invention.
[Explanation of symbols]
10 Semiconductor devices
11 Conductive plate member
12 Semiconductor chip
13 connections
14 Bonding wire
15 Resin member
16 groove
17 Electrode member
17a Area for electrode members
17b Joint surface of electrode member
18 Bonding layer
19 balls
200 recess

Claims (15)

A semiconductor chip in which an integrated circuit is incorporated is arranged at a predetermined position on one surface of a conductive plate member in which regions to be a plurality of electrode portions are set, and a plurality of connection portions of the semiconductor chip are respectively connected After electrically connecting to the corresponding regions, one surface of the conductive plate member is resin-sealed with a resin member so as to enclose the semiconductor chip, and then a terminal portion is provided on the exposed surface of the plurality of electrode portions. In a method for manufacturing a semiconductor device,
In the conductive plate member, a plurality of region setting slits that penetrate in the plate thickness direction and extend in parallel with each other are provided in advance.
After the resin sealing, the conductive plate member is divided in a direction crossing the plurality of region setting slits to form the plurality of electrode portions,
A method for manufacturing a semiconductor device. The plurality of regions set slit method of 請 Motomeko 1, wherein that will be formed by etching. It said plurality of regions set for slit method of 請 Motomeko 1, wherein that will be formed by punching press process. The front SL minute cross to form each electrode portion, the manufacturing method of performed Ru請 Motomeko 1, wherein by machining. Wherein the dividing method of manufacturing a 請 Motomeko 1 wherein Ru performed using a drill or laser. The width of each slit method according to claim 1, wherein the gradually increasing toward the surface of the plate thickness surface or found other side of the one in the direction of the conductive plate member.   The manufacturing method according to claim 1, wherein a cutting assisting slit portion extending in the transverse direction at a predetermined interval is formed integrally with each of the region setting slits.   Each pair of adjacent region setting slits includes a region defining slit portion that defines a plurality of the regions to be the electrode portions, and a connecting slit portion for connecting the regions. Item 2. The production method according to Item 1. Prior to the placement of the semiconductor chip on the conductive plate member, a concave groove extending in parallel with the slit is formed on the other surface of the conductive plate member. The manufacturing method according to claim 1, wherein after forming the electrode portion, a terminal member for forming the terminal portion is coupled to each concave groove portion. The manufacturing method according to claim 9 , wherein the concave groove is formed by etching. The concave groove is a concave portion defined in the other surface of the conductive plate member by a deformed portion formed on the conductive plate member by press working and extending along the slit. Item 10. The manufacturing method according to Item 9 . The manufacturing method according to claim 9 , wherein the width dimension of the concave groove increases as the distance from the bottom surface of the groove increases. The manufacturing method according to claim 11 , wherein a convex surface corresponding to the concave groove is formed on the one surface of the conductive plate member by the deforming portion. Prior to the placement of the semiconductor chip on the conductive plate member, the conductive plate member is formed with a deformed portion that extends in parallel with the slit between the slits by pressing. Ri process according to claim 1, wherein the convex surface protruding to the other side of the plane is defined. The manufacturing method according to claim 14 , wherein the convex surface has a trapezoidal cross-sectional shape that gradually decreases its width dimension toward the top.

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