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JP2500555B2 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JP2500555B2
JP2500555B2 JP28099391A JP28099391A JP2500555B2 JP 2500555 B2 JP2500555 B2 JP 2500555B2 JP 28099391 A JP28099391 A JP 28099391A JP 28099391 A JP28099391 A JP 28099391A JP 2500555 B2 JP2500555 B2 JP 2500555B2
Authority
JP
Japan
Prior art keywords
lead
tip
semiconductor device
semiconductor
pellet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP28099391A
Other languages
Japanese (ja)
Other versions
JPH05121625A (en
Inventor
忠司 能勢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kansai Nippon Electric Co Ltd
Original Assignee
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kansai Nippon Electric Co Ltd filed Critical Kansai Nippon Electric Co Ltd
Priority to JP28099391A priority Critical patent/JP2500555B2/en
Publication of JPH05121625A publication Critical patent/JPH05121625A/en
Application granted granted Critical
Publication of JP2500555B2 publication Critical patent/JP2500555B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体装置に関し、詳細
には半導体ペレットの配線パターンにリード接続予定部
位にリードを電気的に接続する手段に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a means for electrically connecting a lead to a lead connection planned site in a wiring pattern of a semiconductor pellet.

【0002】[0002]

【従来の技術】半導体装置の製造工程で電極パッド
(1)とリード(2)の間を接続する際には、図3に示
すワイヤボンディング装置が使用されている。図3にお
いて、(3)は基板、(4)は基板(3)上に載置され
た半導体ペレットを示し、半導体ペレット(4)の上面
には所定の配設パターンで複数個の電極パッド(1)が
形成されている。一方、半導体ペレット(4)の周りに
は上記電極パッド(1)の個数に対応して複数本のリー
ド(2)が離間配置されている。そして、キャピラリ
(5)により供給されるワイヤ(6)でもって半導体ペ
レット(4)の電極パッド(1)とリード(2)の先端
とを接続することによって半導体装置(7)が製造され
ている。
2. Description of the Related Art A wire bonding apparatus shown in FIG. 3 is used for connecting an electrode pad (1) and a lead (2) in a semiconductor device manufacturing process. In FIG. 3, (3) shows a substrate, (4) shows a semiconductor pellet mounted on the substrate (3), and a plurality of electrode pads ( 1) is formed. On the other hand, around the semiconductor pellet (4), a plurality of leads (2) corresponding to the number of the electrode pads (1) are spaced apart. Then, the semiconductor device (7) is manufactured by connecting the electrode pad (1) of the semiconductor pellet (4) and the tip of the lead (2) with the wire (6) supplied by the capillary (5). .

【0003】一方、ICの高密度実装を達成するため、
TABリード型半導体装置(8)が賞用されている。T
ABリード型半導体装置(8)の製造工程では、図4に
示すように半導体ペレット(4)の上面(9)にバンプ
電極(10)を形成し、絶縁フィルム(11)上に形成され
た金属箔のインナリード(12)の先端部をバンプ電極
(10)に当接させ、インナリード(12)の上方からボン
ディングツール(13)を押付けることによって、インナ
リード(12)の先端部をバンプ電極(10)に熱圧着し、
インナリード(12)の先端部と半導体ペレット(4)の
バンプ電極(10)とを電気的に接続したTABリード型
半導体装置(8)が製造される。
On the other hand, in order to achieve high-density mounting of ICs,
The TAB lead type semiconductor device (8) is used for a prize. T
In the manufacturing process of the AB lead type semiconductor device (8), a bump electrode (10) is formed on the upper surface (9) of the semiconductor pellet (4) and a metal formed on the insulating film (11) as shown in FIG. The tip of the inner lead (12) of the foil is brought into contact with the bump electrode (10) and the bonding tool (13) is pressed from above the inner lead (12) to bump the tip of the inner lead (12). Thermocompression bonded to the electrode (10),
A TAB lead type semiconductor device (8) is manufactured in which the tip portion of the inner lead (12) and the bump electrode (10) of the semiconductor pellet (4) are electrically connected.

【0004】[0004]

【発明が解決しようとする課題】図3に示す半導体装置
(7)では、電極パッド(1)の数が増えると、これに
対してリード(2)の本数も増えるため、キャピラリ
(5)によるワイヤ(6)のボンディング時間が長くな
り、インデックスが低下してしまう。
In the semiconductor device (7) shown in FIG. 3, when the number of electrode pads (1) increases, the number of leads (2) also increases, so that the capillary (5) is used. The bonding time of the wire (6) becomes long and the index decreases.

【0005】一方、図4に示すTABリード型半導体装
置(8)では、上述の場合と比較してインデックスは高
いものの、Au等の盛り上げメッキによってバンプ電極
(10)を形成しているため、バンプ電極(10)の形成に
コストがかかり製品コストが高いという問題があると共
に、リード押圧時にリード先端がずれ落ち隣とショート
する問題がある。
On the other hand, in the TAB lead type semiconductor device (8) shown in FIG. 4, although the index is higher than in the above case, since the bump electrode (10) is formed by the heap plating of Au or the like, the bump There is a problem that the cost of forming the electrode (10) is high and the product cost is high, and there is a problem that the tip of the lead slips off when the lead is pressed and short-circuits with the next.

【0006】[0006]

【課題を解決するための手段】上記課題の解決手段とし
て、本発明は、半導体ペレットの上面に形成された配線
パターンから延びてその上面周辺部に整列配置されたリ
ード接続予定部位と、上記半導体ペレットの周囲に配置
されたリードとを電気的、且つ、機械的に接続した半導
体装置において、上記半導体ペレットの上面に配線パタ
ーンを被覆する絶縁カバーを形成してそのリード接続予
定部位と対応する部位を切除し、上記リード接続予定部
位から外側に位置する半導体ペレット周縁部位に絶縁膜
を被着形成し、上記絶縁カバーの開口部にリードの先端
部分を嵌合させてリード接続予定部位に熱圧着したこと
を特徴とする半導体装置を提供するものである。
As a means for solving the above-mentioned problems, the present invention is directed to a semiconductor device having a lead-connecting portion which extends from a wiring pattern formed on the upper surface of the semiconductor pellet and is arranged in alignment with the peripheral portion of the upper surface of the semiconductor pellet. In a semiconductor device in which leads arranged around a pellet are electrically and mechanically connected, an insulating cover for covering a wiring pattern is formed on the upper surface of the semiconductor pellet, and a portion corresponding to the lead connection planned portion is formed. Is cut off, an insulating film is formed on the peripheral portion of the semiconductor pellet located outside the planned lead connection site, the tip of the lead is fitted into the opening of the insulating cover, and thermocompression bonded to the planned lead connection site. The present invention provides a semiconductor device characterized by the above.

【0007】また、本発明では、リードの先端部分を位
置規制する絶縁部材で各リードの先端部分を除く部分を
保持することが望ましい。
Further, in the present invention, it is desirable that an insulating member for controlling the position of the tip portion of the lead holds the portion excluding the tip portion of each lead.

【0008】[0008]

【作用】本発明に係る半導体装置では、半導体ペレット
の上面に配線パターンを被覆する絶縁カバーを形成して
そのリード接続予定部位と対応する部位を切除し、上記
リード接続予定部位から外側に位置する半導体ペレット
周縁部位に絶縁膜を被着形成し、上記絶縁カバーの開口
部にリードの先端部分を嵌合させてリード接続予定部位
に熱圧着したことにより、ワイヤボンディングやバンプ
電極の形成をすることなく、半導体ペレットとリードと
を電気的に接続することが可能となる。
In the semiconductor device according to the present invention, an insulating cover for covering the wiring pattern is formed on the upper surface of the semiconductor pellet, the portion corresponding to the lead connection planned portion is cut off, and it is located outside the lead connection planned portion. Wire bonding and bump electrode formation by depositing an insulating film on the peripheral edge of the semiconductor pellet, fitting the tip of the lead into the opening of the insulating cover, and thermocompression-bonding to the intended lead connection site. Instead, the semiconductor pellet and the lead can be electrically connected.

【0009】また、リードの先端部分を位置規制する絶
縁部材で各リードの先端部分を除く部分を保持すること
により、リード接続予定部位にリードの先端部分を熱圧
着するに際して、そのリードの先端部分とリード接続予
定部位との位置合わせが容易となる。
Further, by holding the portion excluding the tip portion of each lead with an insulating member that regulates the tip portion of the lead, when the tip portion of the lead is thermocompression-bonded to the planned lead connection portion, the tip portion of the lead is held. It becomes easy to align the lead and the planned lead connection site.

【0010】[0010]

【実施例】以下、図1を参照して本発明の一実施例を説
明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG.

【0011】図1に示すように半導体ペレット(4)の
上面にはAl等の薄膜からなる配線パターン(15)が被
着形成され、その配線パターン(15)から延びて半導体
ペレット(4)の上面周辺部に整列配置されたリード接
続予定部位(17)が形成されている。上記配線パターン
(15)の上に絶縁カバー(16)をリード接続予定部位
(17)と対応する部分で櫛歯状に切除する。これによ
り、絶縁カバー(16)の櫛歯状開口部に配線パターン
(15)のリード接続予定部位(17)が露呈することにな
る。また、上記リード接続予定部位(17)から外側に位
置する半導体ペレット(4)の周縁部位に絶縁膜(14)
を被着形成する。
As shown in FIG. 1, a wiring pattern (15) made of a thin film of Al or the like is deposited on the upper surface of the semiconductor pellet (4) and extends from the wiring pattern (15) to form the semiconductor pellet (4). Predetermined lead connection sites (17) are formed in the peripheral portion of the upper surface. On the wiring pattern (15), the insulating cover (16) is cut out in a comb-tooth shape at a portion corresponding to the planned lead connection site (17). As a result, the lead connection planned site (17) of the wiring pattern (15) is exposed in the comb-teeth-shaped opening of the insulating cover (16). In addition, the insulating film (14) is formed on the peripheral portion of the semiconductor pellet (4) located outside the lead connection planned portion (17).
Is formed.

【0012】一方、上記半導体ペレット(4)の周囲に
はリード接続予定部位(17)と対応してリード(2)が
配置され、そのリード(2)の先端部分を、上記絶縁カ
バー(16)の櫛歯状開口部に嵌合させてリード接続予定
部位(17)に熱圧着することにより半導体ペレット
(4)とリード(2)とを電気的に接続する。この時、
上記リード(2)の先端部分と半導体ペレット(4)の
周縁部との間には絶縁膜(14)が介在するため、半導体
ペレット(4)とリード(2)とが電気的にショートす
ることはない。
On the other hand, a lead (2) is arranged around the semiconductor pellet (4) so as to correspond to the lead connection planned site (17), and the tip portion of the lead (2) is attached to the insulating cover (16). The semiconductor pellet (4) and the lead (2) are electrically connected to each other by fitting into the comb-teeth-shaped opening of (1) and thermocompression-bonding to the lead connection planned site (17). This time,
Since the insulating film (14) is interposed between the tip portion of the lead (2) and the peripheral portion of the semiconductor pellet (4), the semiconductor pellet (4) and the lead (2) are electrically short-circuited. There is no.

【0013】ここで、リード(2)の先端部分は対応す
るリード接続予定部位(17)内に嵌まり込むことによっ
て自動的に位置決めされるが、上記リード接続予定部位
(17)までリード(2)の先端部分を到達させるために
リード(2)の先端部分を延設すると、互いに平行に整
列しているリード(2)間に位置ずれが発生し易くな
り、リード接続予定部位(17)内へのリード(2)の先
端部分の挿入が困難となる。そこで、リード(2)
(2)…の先端部分を除いてその基端側部分を高分子材
料等の絶縁部材(18)で保持すれば、上述した位置ずれ
を未然に防止することができる。
Here, the tip portion of the lead (2) is automatically positioned by being fitted into the corresponding lead connection planned site (17). If the tip portions of the leads (2) are extended in order to reach the tip portions of (1), a position shift easily occurs between the leads (2) aligned in parallel with each other, and the lead connection planned site (17) It becomes difficult to insert the tip portion of the lead (2) into the lead. Then, lead (2)
If the base end side portion of (2) is held by the insulating member (18) made of a polymer material or the like except the tip end portion, the above-mentioned displacement can be prevented.

【0014】具体的にリード(2)と半導体ペレット
(4)との電気的な接続は、両者の相対配設位置を調節
し、リード(2)の先端部分の真下に、対応するリード
接続予定部位(17)が配設されるように位置合わせした
後、リード(2)の下方から半導体ペレット(4)を押
し上げ、それぞれのリード(2)の先端部分を対応する
リード接続予定部位(17)内に座着させて当接させる。
この後、リード(2)の上方からボンディングツール
〔図4に参照番号(13)で表示〕を下降させ、押圧力の
作用下に加熱することによって、リード(2)の先端部
分を配線パターン(15)のリード接続予定部位(17)に
熱圧着する。
Specifically, the electrical connection between the lead (2) and the semiconductor pellet (4) is adjusted by adjusting the relative disposition positions of the two, and the corresponding lead connection is planned just below the tip of the lead (2). After positioning so that the parts (17) are arranged, the semiconductor pellet (4) is pushed up from below the leads (2), and the tip parts of the respective leads (2) are connected to the corresponding lead connection parts (17). Sit inside and make contact.
After that, the bonding tool [indicated by reference numeral (13) in FIG. 4] is lowered from above the lead (2) and heated under the action of the pressing force, so that the tip portion of the lead (2) is connected to the wiring pattern ( Thermocompression-bond to the lead connection planned part (17) of 15).

【0015】尚、リード(2)の先端部分の形状は図2
に例示するように矩形、台形、長円形、円形等に成形す
ることが可能であり、これに合わせて半導体ペレット
(4)側に形成されるリード接続予定部位(17)の形状
と開口寸法を調節する。
The shape of the tip of the lead (2) is shown in FIG.
It is possible to form a rectangle, a trapezoid, an oval, a circle, etc., as illustrated in Fig. 2, and in accordance with this, the shape and opening size of the lead connection planned site (17) formed on the semiconductor pellet (4) side. Adjust.

【0016】また、リード(2)の先端部分とリード接
続予定部位(17)との接続手段としては、ボンディング
ツール(13)による熱圧着方式の外、熱圧着と超音波振
動の併用方式も採用することが可能である。
In addition to the thermocompression bonding method using the bonding tool (13), a combination of thermocompression bonding and ultrasonic vibration is also used as a connecting means between the tip portion of the lead (2) and the planned lead connection portion (17). It is possible to

【0017】[0017]

【発明の効果】本発明によれば、リードの本数が多い場
合にも一回の熱圧着動作でリードの先端部分を対応する
半導体ペレットに電気的に接続することができるから、
位置合わせが容易になるだけでなくインデックスも早く
なり、リード先端の曲がりもなくなる。また、TABリ
ード型半導体装置の製造で問題とされている高価なバン
プ電極の形成が不必要となるため、半導体装置の製造コ
ストの低減も可能となる。
According to the present invention, even when the number of leads is large, it is possible to electrically connect the tip portions of the leads to the corresponding semiconductor pellets by one thermocompression bonding operation.
Not only the alignment becomes easier, but also the index becomes faster, and the bending of the tip of the lead is eliminated. Further, since it is not necessary to form expensive bump electrodes, which is a problem in manufacturing the TAB lead type semiconductor device, it is possible to reduce the manufacturing cost of the semiconductor device.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る半導体装置の実施例を示す部分分
解斜視図
FIG. 1 is a partially exploded perspective view showing an embodiment of a semiconductor device according to the present invention.

【図2】リードの先端部分の形状を例示する断面図FIG. 2 is a cross-sectional view illustrating the shape of the tip portion of the lead.

【図3】半導体装置の従来例を示す平面図FIG. 3 is a plan view showing a conventional example of a semiconductor device.

【図4】TABリード型半導体装置の従来例を示す正面
FIG. 4 is a front view showing a conventional example of a TAB lead type semiconductor device.

【符号の説明】[Explanation of symbols]

2 リード 4 半導体ペレット 14 絶縁膜 15 配線パターン 16 絶縁カバー 17 リード接続予定部位 2 Lead 4 Semiconductor pellet 14 Insulating film 15 Wiring pattern 16 Insulation cover 17 Lead connection site

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 半導体ペレットの上面に形成された配線
パターンから延びてその上面周辺部に整列配置されたリ
ード接続予定部位と、上記半導体ペレットの周囲に配置
されたリードとを電気的、且つ、機械的に接続した半導
体装置において、 上記半導体ペレットの上面に配線パターンを被覆する絶
縁カバーを形成してそのリード接続予定部位と対応する
部位を切除し、上記リード接続予定部位から外側に位置
する半導体ペレット周縁部位に絶縁膜を被着形成し、上
記絶縁カバーの開口部にリードの先端部分を嵌合させて
リード接続予定部位に熱圧着したことを特徴とする半導
体装置。
1. A lead connection planned site extending from a wiring pattern formed on an upper surface of a semiconductor pellet and aligned in a peripheral portion of the upper surface, and a lead arranged around the semiconductor pellet are electrically and In a mechanically connected semiconductor device, an insulating cover that covers a wiring pattern is formed on the upper surface of the semiconductor pellet, and a portion corresponding to the lead connection planned site is cut off, and a semiconductor located outside the lead connection planned site A semiconductor device, comprising: forming an insulating film on a peripheral portion of a pellet; fitting a tip of a lead into an opening of the insulating cover;
【請求項2】 請求項1記載の半導体装置において、リ
ードの先端部分を位置規制する絶縁部材で各リードの先
端部分を除く部分を保持したことを特徴とする半導体装
置。
2. The semiconductor device according to claim 1, wherein an insulating member for regulating the position of the tip of the lead holds the part of the lead excluding the tip.
JP28099391A 1991-10-28 1991-10-28 Semiconductor device Expired - Lifetime JP2500555B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28099391A JP2500555B2 (en) 1991-10-28 1991-10-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28099391A JP2500555B2 (en) 1991-10-28 1991-10-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH05121625A JPH05121625A (en) 1993-05-18
JP2500555B2 true JP2500555B2 (en) 1996-05-29

Family

ID=17632769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28099391A Expired - Lifetime JP2500555B2 (en) 1991-10-28 1991-10-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2500555B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3150253B2 (en) * 1994-07-22 2001-03-26 三菱電機株式会社 Semiconductor device, its manufacturing method and mounting method
US8384228B1 (en) * 2009-04-29 2013-02-26 Triquint Semiconductor, Inc. Package including wires contacting lead frame edge

Also Published As

Publication number Publication date
JPH05121625A (en) 1993-05-18

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