JP2019121686A - 加工方法 - Google Patents
加工方法 Download PDFInfo
- Publication number
- JP2019121686A JP2019121686A JP2018000517A JP2018000517A JP2019121686A JP 2019121686 A JP2019121686 A JP 2019121686A JP 2018000517 A JP2018000517 A JP 2018000517A JP 2018000517 A JP2018000517 A JP 2018000517A JP 2019121686 A JP2019121686 A JP 2019121686A
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- processing
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- 238000003672 processing method Methods 0.000 title claims abstract description 25
- 230000005856 abnormality Effects 0.000 claims abstract description 112
- 239000000463 material Substances 0.000 abstract description 10
- 238000005520 cutting process Methods 0.000 description 117
- 235000012431 wafers Nutrition 0.000 description 85
- 238000001514 detection method Methods 0.000 description 33
- 230000002159 abnormal effect Effects 0.000 description 11
- 238000012544 monitoring process Methods 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000002173 cutting fluid Substances 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dicing (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Removal Of Specific Substances (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Abstract
Description
1a 表面
1b 裏面
3 加工予定ライン
5 デバイス
7 テープ
9 フレーム
11 加工痕
13 マーク
2 切削装置
4 基台
6 X軸移動テーブル
8,18,26 ガイドレール
10,20 ボールねじ
12,22,28 パルスモータ
14 保持テーブル
14a 保持面
14b クランプ
16 切削ユニット支持部
24 切削ユニット
30 カメラユニット
32 切削ブレード
34 タッチパネル
36 表示画面
38 異常の検出条件
38a 説明図
40 撮像画像
42 全体図
44 加工予定ライン
46 位置
Claims (3)
- 複数の加工予定ラインが設定された被加工物を該加工予定ラインに沿って加工する加工方法であって、
被加工物の被貼着面に該被貼着面の径よりも大きな径のテープを貼着するテープ貼着ステップと、
保持面を有する保持テーブルの該保持面上に該被貼着面側を該保持面に向けた状態で被加工物を載せ、該テープを介して該被加工物を保持テーブル上に保持する保持ステップと、
該保持テーブル上に保持された該被加工物を該加工予定ラインに沿って加工ユニットで加工する加工ステップと、を備え、
該加工ステップでは、該被加工物の加工を実施するとともに該加工の異常の有無を監視し、該加工の異常が検出された場合に、該加工の異常が検出された加工予定ラインの延長線上において該テープにマークを形成することを特徴とする加工方法。 - 該マークは該加工ユニットで形成されることを特徴とする請求項1に記載の加工方法。
- 該加工ステップでは、加工で形成された加工痕を確認することで該加工の異常の有無を監視することを特徴とする請求項1又は請求項2に記載の加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018000517A JP6964945B2 (ja) | 2018-01-05 | 2018-01-05 | 加工方法 |
CN201811633935.8A CN110010446B (zh) | 2018-01-05 | 2018-12-29 | 加工方法 |
TW108100369A TWI779151B (zh) | 2018-01-05 | 2019-01-04 | 加工方法 |
KR1020190001121A KR102631713B1 (ko) | 2018-01-05 | 2019-01-04 | 가공 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018000517A JP6964945B2 (ja) | 2018-01-05 | 2018-01-05 | 加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019121686A true JP2019121686A (ja) | 2019-07-22 |
JP6964945B2 JP6964945B2 (ja) | 2021-11-10 |
Family
ID=67165273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018000517A Active JP6964945B2 (ja) | 2018-01-05 | 2018-01-05 | 加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6964945B2 (ja) |
KR (1) | KR102631713B1 (ja) |
CN (1) | CN110010446B (ja) |
TW (1) | TWI779151B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7576108B2 (ja) | 2020-06-22 | 2024-10-30 | アプライド マテリアルズ インコーポレイテッド | レーザダイシング用の自動カーフオフセットマッピング及び補正システム |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113714137B (zh) * | 2021-08-26 | 2023-03-03 | 深圳市中科创激光技术有限公司 | 灯珠的挑选方法、装置、设备及存储介质 |
CN114169675B (zh) * | 2021-11-01 | 2022-12-13 | 深圳市匠心智汇科技有限公司 | 划切加工的监测方法、装置、终端设备及存储介质 |
Citations (3)
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---|---|---|---|---|
JP2011135056A (ja) * | 2009-11-25 | 2011-07-07 | Renesas Electronics Corp | 半導体装置の製造方法、半導体装置の製造装置及び半導体装置の製造システム |
JP2015005610A (ja) * | 2013-06-20 | 2015-01-08 | 株式会社ディスコ | ウェーハの加工方法 |
JP2016104491A (ja) * | 2014-12-01 | 2016-06-09 | 株式会社ディスコ | レーザー加工装置 |
Family Cites Families (20)
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---|---|---|---|---|
JPH06120335A (ja) * | 1992-10-06 | 1994-04-28 | Nippon Steel Corp | 半導体ウェーハのダイシング装置 |
KR100265969B1 (ko) * | 1997-08-30 | 2000-09-15 | 김영환 | 레이저를이용한불량다이표시방법 |
JP2001009675A (ja) | 1999-06-29 | 2001-01-16 | Disco Abrasive Syst Ltd | 切削ユニットの異常検出方法及び切削装置 |
US6934920B2 (en) * | 2000-10-11 | 2005-08-23 | Sii Nanotechnology Inc. | Specimen analyzing method |
KR20030087783A (ko) * | 2002-05-09 | 2003-11-15 | 엘지전자 주식회사 | 불량인쇄회로기판의 표시방법 및 불량인쇄회로기판을포함한 기판유니트의 패키징방법 |
JP2007095952A (ja) * | 2005-09-28 | 2007-04-12 | Tokyo Seimitsu Co Ltd | レーザーダイシング装置及びレーザーダイシング方法 |
JP4783381B2 (ja) * | 2005-11-24 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
TWM310440U (en) * | 2006-11-09 | 2007-04-21 | Princeton Technology Corp | Wafer map recording |
JP2008178886A (ja) * | 2007-01-23 | 2008-08-07 | Disco Abrasive Syst Ltd | 製品情報の刻印方法 |
TWI412068B (zh) * | 2008-09-25 | 2013-10-11 | United Microelectronics Corp | 對準標記及缺陷檢測方法 |
TWI386643B (zh) * | 2009-04-17 | 2013-02-21 | Chipmos Technologies Inc | 晶圓缺陷標示系統 |
JP2011091286A (ja) * | 2009-10-26 | 2011-05-06 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
JP6029271B2 (ja) * | 2011-09-28 | 2016-11-24 | 株式会社ディスコ | 加工装置 |
US8883565B2 (en) * | 2011-10-04 | 2014-11-11 | Infineon Technologies Ag | Separation of semiconductor devices from a wafer carrier |
US9356201B2 (en) * | 2013-10-04 | 2016-05-31 | Bridgelux, Inc. | Die emitting white light |
JP6228044B2 (ja) * | 2014-03-10 | 2017-11-08 | 株式会社ディスコ | 板状物の加工方法 |
JP2016192494A (ja) * | 2015-03-31 | 2016-11-10 | 株式会社ディスコ | ウエーハの分割方法 |
US9899332B2 (en) * | 2016-02-18 | 2018-02-20 | Texas Instruments Incorporated | Visual identification of semiconductor dies |
JP6600267B2 (ja) * | 2016-03-15 | 2019-10-30 | 株式会社ディスコ | 被加工物の切削方法 |
JP6808267B2 (ja) * | 2016-06-22 | 2021-01-06 | 株式会社ディスコ | 切削方法、及び、切削装置 |
-
2018
- 2018-01-05 JP JP2018000517A patent/JP6964945B2/ja active Active
- 2018-12-29 CN CN201811633935.8A patent/CN110010446B/zh active Active
-
2019
- 2019-01-04 TW TW108100369A patent/TWI779151B/zh active
- 2019-01-04 KR KR1020190001121A patent/KR102631713B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011135056A (ja) * | 2009-11-25 | 2011-07-07 | Renesas Electronics Corp | 半導体装置の製造方法、半導体装置の製造装置及び半導体装置の製造システム |
JP2015005610A (ja) * | 2013-06-20 | 2015-01-08 | 株式会社ディスコ | ウェーハの加工方法 |
JP2016104491A (ja) * | 2014-12-01 | 2016-06-09 | 株式会社ディスコ | レーザー加工装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7576108B2 (ja) | 2020-06-22 | 2024-10-30 | アプライド マテリアルズ インコーポレイテッド | レーザダイシング用の自動カーフオフセットマッピング及び補正システム |
Also Published As
Publication number | Publication date |
---|---|
JP6964945B2 (ja) | 2021-11-10 |
CN110010446A (zh) | 2019-07-12 |
TWI779151B (zh) | 2022-10-01 |
TW201936322A (zh) | 2019-09-16 |
CN110010446B (zh) | 2024-02-20 |
KR20190083992A (ko) | 2019-07-15 |
KR102631713B1 (ko) | 2024-01-30 |
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