JP2019012802A - 基板処理方法および基板処理装置 - Google Patents
基板処理方法および基板処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 90
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- 239000007864 aqueous solution Substances 0.000 claims abstract description 94
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000001301 oxygen Substances 0.000 claims abstract description 60
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 60
- 239000000243 solution Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 90
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 58
- 238000004090 dissolution Methods 0.000 claims description 30
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 18
- 239000012298 atmosphere Substances 0.000 claims description 9
- 229920006395 saturated elastomer Polymers 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 3
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- 239000012530 fluid Substances 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- 229920005591 polysilicon Polymers 0.000 description 16
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
まずは、図1を参照しながら、実施形態に係る基板処理システム1の概略構成について説明する。図1は、実施形態に係る基板処理システム1の概略構成を示す図である。以下では、位置関係を明確にするために、互いに直交するX軸、Y軸およびZ軸を規定し、Z軸正方向を鉛直上向き方向とする。
次に、処理ユニット16および低温溶解部70の概要について、図2を参照しながら説明する。図2は、処理ユニット16および低温溶解部70の構成を示す模式図である。図2に示すように、処理ユニット16は、チャンバ20と、基板保持機構30と、処理流体供給部40と、回収カップ50とを備える。
つづいては、実施形態におけるエッチング処理の処理条件について説明する。図8Aは、参考例2におけるエッチング量の面内分布を示す図であり、図8Bは、実施形態に係るエッチング量の面内分布を示す図である。
つづいて、実施形態に係る基板処理の手順について、図11を参照しながら説明する。図11は、基板処理システム1が実行する基板処理の手順を示すフローチャートである。
L アルカリ性水溶液
1 基板処理システム
16 処理ユニット
18 制御部
40 処理流体供給部
70 低温溶解部
Claims (10)
- 室温より低い所定の温度に冷却したアルカリ性水溶液に酸素を溶解させる低温溶解工程と、
酸素を溶解させた前記アルカリ性水溶液を基板に供給して前記基板をエッチングするエッチング工程と、
を含むことを特徴とする基板処理方法。 - 前記アルカリ性水溶液は、
TMAH(水酸化テトラメチルアンモニウム)、コリン水溶液、KOH(水酸化カリウム)水溶液、およびアンモニア水のうち少なくとも1つを含むこと
を特徴とする請求項1に記載の基板処理方法。 - 前記エッチング工程の前に、前記基板の表面に形成された自然酸化膜を除去する酸化膜除去工程を含むこと
を特徴とする請求項1または2に記載の基板処理方法。 - 前記エッチング工程は、
前記酸化膜除去工程の後、予め設定された時間内に行うこと
を特徴とする請求項3に記載の基板処理方法。 - 前記低温溶解工程の後、かつ前記エッチング工程の前または前記エッチング工程と同時に、前記アルカリ性水溶液を昇温させる昇温工程を含むこと
を特徴とする請求項1〜4のいずれか一つに記載の基板処理方法。 - 前記昇温工程は、
前記アルカリ性水溶液を前記基板に供給する供給ラインを昇温する工程、および前記アルカリ性水溶液が供給される前記基板を昇温する工程のうち少なくとも1つを含むこと
を特徴とする請求項5に記載の基板処理方法。 - 前記低温溶解工程は、
前記アルカリ性水溶液内の溶存酸素が飽和するように酸素を溶解させること
を特徴とする請求項1〜6のいずれか一つに記載の基板処理方法。 - 前記エッチング工程は、
酸素を含有する雰囲気下で行われること
を特徴とする請求項1〜7のいずれか一つに記載の基板処理方法。 - 室温より低い所定の温度に冷却したアルカリ性水溶液に酸素を溶解させる低温溶解部と、
酸素を溶解させた前記アルカリ性水溶液を基板に供給する供給部と、
を備え、
前記基板に対して前記供給部から前記アルカリ性水溶液を供給することにより、前記基板をエッチングすること
を特徴とする基板処理装置。 - 前記低温溶解部と前記供給部との間に設けられる前記アルカリ性水溶液の供給ラインには、ヒータが設けられること
を特徴とする請求項9に記載の基板処理装置。
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JP2017130027A JP6917807B2 (ja) | 2017-07-03 | 2017-07-03 | 基板処理方法 |
TW107120905A TWI757514B (zh) | 2017-07-03 | 2018-06-19 | 基板處理方法及基板處理裝置 |
US16/019,773 US10685858B2 (en) | 2017-07-03 | 2018-06-27 | Substrate processing method and substrate processing apparatus |
KR1020180074591A KR102534573B1 (ko) | 2017-07-03 | 2018-06-28 | 기판 처리 방법 및 기판 처리 장치 |
CN201810716004.8A CN109216180B (zh) | 2017-07-03 | 2018-07-03 | 基板处理方法和基板处理装置 |
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JP2017130027A JP6917807B2 (ja) | 2017-07-03 | 2017-07-03 | 基板処理方法 |
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JP2019012802A true JP2019012802A (ja) | 2019-01-24 |
JP6917807B2 JP6917807B2 (ja) | 2021-08-11 |
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US (1) | US10685858B2 (ja) |
JP (1) | JP6917807B2 (ja) |
KR (1) | KR102534573B1 (ja) |
CN (1) | CN109216180B (ja) |
TW (1) | TWI757514B (ja) |
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KR20210054996A (ko) | 2019-11-06 | 2021-05-14 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 기판 처리 장치 |
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US10747651B1 (en) * | 2018-05-31 | 2020-08-18 | The Ultimate Software Group, Inc. | System for optimizing system resources and runtime during a testing procedure |
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KR20190004224A (ko) | 2019-01-11 |
US10685858B2 (en) | 2020-06-16 |
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JP6917807B2 (ja) | 2021-08-11 |
US20190006206A1 (en) | 2019-01-03 |
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