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JP2013012616A - Mounting member - Google Patents

Mounting member Download PDF

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Publication number
JP2013012616A
JP2013012616A JP2011145099A JP2011145099A JP2013012616A JP 2013012616 A JP2013012616 A JP 2013012616A JP 2011145099 A JP2011145099 A JP 2011145099A JP 2011145099 A JP2011145099 A JP 2011145099A JP 2013012616 A JP2013012616 A JP 2013012616A
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substrate
main surface
mounting member
flow path
thermal conductivity
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JP5848043B2 (en
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Tetsuya Inoue
徹彌 井上
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Kyocera Corp
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Kyocera Corp
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a mounting member capable of maintaining a placed sample to a constant temperature.SOLUTION: A mounting member 1 having a flow channel 6 includes: a first base plate 3 of ceramic having one main surface on which a sample 2 is placed, and the other main surface formed with a groove 8 defining an inner wall of the flow channel 6; a second base plate 4 of ceramic, one main surface of which is connected to the other main surface of the first base plate 3; and a junction layer 5 of glass having the thermal conductivity lower than that of the first base plate 3 interposed between the first base plate 3 and the second base plate 4. One main surface of the second base plate 4 has a first area 9 connected to the other surface of the first base plate 3 via the junction layer 5 and a second area 10 that defines the inner wall of the flow channel 6 and the second area 10 is flush with the first area 9.

Description

本発明は、例えば半導体デバイスや液晶表示デバイスの製造装置に用いられ、ウェハなどの被処理物を載置する載置用部材に関する。   The present invention relates to a mounting member that is used in, for example, a manufacturing apparatus for a semiconductor device or a liquid crystal display device and mounts an object to be processed such as a wafer.

従来、半導体デバイスや液晶表示デバイスの製造に用いられる露光装置は、マスクに描かれた極めて複雑な回路パターンなどを高性能なレンズで縮小し、ウェハに焼き付けることによって、ウェハ上に極小パターンを形成する。近年、例えば、特許文献1に記載されたような、レンズとウェハとの間に純水を満たした状態で露光する液浸露光技術が提案され、回路パターンの微細化が進められている。   Conventionally, an exposure apparatus used to manufacture semiconductor devices and liquid crystal display devices forms extremely small patterns on a wafer by reducing extremely complex circuit patterns drawn on a mask with a high-performance lens and printing them on the wafer. To do. In recent years, for example, an immersion exposure technique for exposing in a state where pure water is filled between a lens and a wafer as described in Patent Document 1 has been proposed, and miniaturization of circuit patterns has been promoted.

しかしながら、このような液浸露光装置では、ウェハ上の限られたエリア(露光エリア)にレーザーが照射され、熱エネルギーが投入される一方で、露光エリア以外では、ウェハに残された純水の蒸発による気化熱の発生により、ウェハが冷却される為、ウェハにおける複数の領域の間に温度差が生じる。この温度差は、ウェハの伸縮や変形、レジストに対する露光特性の変化などを引き起こし、ウェハ上に所望の回路パターンを形成することができないという問題があった。また、ウェハ上に積層される複数の配線パターンの間でずれが生じ、重ね合わせを形成することができないといった課題があった。その為、ウェハを載置するとともに、ウェハ内の温度分布を小さくし、ウェハ全体を一定の温度に維持することが可能な載置用部材が求められている。   However, in such an immersion exposure apparatus, a laser is irradiated to a limited area (exposure area) on the wafer and thermal energy is applied, while the pure water remaining on the wafer is removed outside the exposure area. Since the wafer is cooled by the generation of vaporization heat due to evaporation, a temperature difference is generated between a plurality of regions in the wafer. This temperature difference causes expansion and contraction and deformation of the wafer, a change in exposure characteristics with respect to the resist, and there is a problem that a desired circuit pattern cannot be formed on the wafer. In addition, there is a problem that misalignment occurs between a plurality of wiring patterns stacked on a wafer, and an overlay cannot be formed. Therefore, there is a need for a mounting member that can mount a wafer, reduce the temperature distribution in the wafer, and maintain the entire wafer at a constant temperature.

特開2004−207710号公報JP 2004-207710 A

本発明は、載置する試料を一定の温度に維持する要求に応える載置用部材を提供するものである。   The present invention provides a mounting member that meets the demand for maintaining a sample to be mounted at a constant temperature.

本発明の一形態に係る載置用部材は、流路を有する載置用部材において、一主面に試料が載置され、他主面に前記流路の内壁を構成する溝部を有するセラミックスからなる第1基板と、一主面が該第1基板の他主面に接続されたセラミックスからなる第2基板と、前記第1基板と前記第2基板との間に介在した、前記第1基板よりも熱伝導率の低いガラスからなる接合層とを備え、前記第2基板の前記一主面は、前記第1基板の前記他主面に前記接合層を介して接続された第1領域と、前記流路の内壁を構成する第2領域とを有し、該第2領域は、前記第1領域と同一平面をなす。   The mounting member according to an aspect of the present invention is a mounting member having a flow path, in which a sample is mounted on one main surface, and a ceramic having a groove portion forming the inner wall of the flow path on the other main surface. The first substrate, the second substrate made of ceramics whose one main surface is connected to the other main surface of the first substrate, and the first substrate interposed between the first substrate and the second substrate A bonding layer made of glass having a lower thermal conductivity than the first main surface of the second substrate, and a first region connected to the other main surface of the first substrate via the bonding layer. And a second region constituting an inner wall of the flow path, and the second region is flush with the first region.

また、本発明の一形態に係る載置用部材は、一主面に試料が載置されるセラミックスからなる第1基板と、該第1基板の他主面に接続したセラミックスからなる第2基板と、前記第1基板と前記第2基板との間に介され、前記第1基板よりも熱伝導率の低いガラスからなる接合層と、前記第1基板に形成された流路とを備える。   The mounting member according to an aspect of the present invention includes a first substrate made of ceramics on which a sample is placed on one main surface, and a second substrate made of ceramics connected to the other main surface of the first substrate. And a bonding layer made of glass having a lower thermal conductivity than the first substrate, and a flow path formed in the first substrate. The bonding layer is interposed between the first substrate and the second substrate.

本発明の一形態にかかる載置用部材によれば、第1基板および第2基板が接合層を介して接続されており、流路が第1基板に形成されていることから、該流路によって、接合層
よりも熱伝導率の高い第1基板を介して、第1基板に載置される試料の温度を制御することができるため、試料の温度をより一定に維持することできる。
According to the mounting member according to one aspect of the present invention, the first substrate and the second substrate are connected via the bonding layer, and the flow path is formed in the first substrate. Thus, the temperature of the sample placed on the first substrate can be controlled via the first substrate having a higher thermal conductivity than the bonding layer, so that the temperature of the sample can be kept more constant.

図1(a)は、本発明の一実施形態に係る載置用部材の斜視図であり、図1(b)は、図1(a)の厚み方向に沿った断面の部分拡大図である。FIG. 1A is a perspective view of a mounting member according to an embodiment of the present invention, and FIG. 1B is a partially enlarged view of a cross section along the thickness direction of FIG. . 図2(a)は、本発明の他の実施形態に係る載置用部材の図1(b)に相当する部分の拡大図であり、図2(b)は、本発明の他の実施形態に係る載置用部材の図1(b)に相当する部分の拡大図である。FIG. 2 (a) is an enlarged view of a portion corresponding to FIG. 1 (b) of a mounting member according to another embodiment of the present invention, and FIG. 2 (b) is another embodiment of the present invention. FIG. 2 is an enlarged view of a portion corresponding to FIG. 1B of the mounting member according to FIG.

以下に、本発明の一実施形態に係る載置用部材を、図1(a)および(b)に基づいて詳細に説明する。   Below, the member for mounting which concerns on one Embodiment of this invention is demonstrated in detail based on Fig.1 (a) and (b).

図1(a)および(b)に示した載置用部材1は、半導体デバイスや液晶表示デバイスの製造に用いられる液浸露光装置またはEB露光装置等の露光装置において、半導体ウェハまたはガラス基板等の試料2を載置するものである。この載置用部材1は、一主面に試料2が載置される第1基板3と、一主面が第1基板3の他主面に接続された第2基板4と、第1基板3と第2基板4との間に介在した接合層5と、第1基板3に形成された流路6と、を備えている。   A mounting member 1 shown in FIGS. 1A and 1B is a semiconductor wafer or glass substrate in an exposure apparatus such as an immersion exposure apparatus or an EB exposure apparatus used for manufacturing a semiconductor device or a liquid crystal display device. The sample 2 is placed. The mounting member 1 includes a first substrate 3 on which a sample 2 is placed on one main surface, a second substrate 4 having one main surface connected to the other main surface of the first substrate 3, and a first substrate. 3 and the second substrate 4, and a flow path 6 formed in the first substrate 3.

第1基板3は、一主面に試料2を載置する突起7を有する円板状のセラミックスからなる部材であり、炭化珪素質焼結体によって形成することができる。この第1基板3は、厚み(Z方向)が例えば5mm以上30mm以下に設定され、熱伝導率が例えば150W/m・K以上200W/m・K以下に設定されている。なお、熱伝導率は、室温(23℃)におけるアルバック理工製TC−7000を用いたレーザーフラッシュ法にて測定される。以下、各部材の熱伝導率は、第1基板3の熱伝導率と同様の方法で測定される。   The first substrate 3 is a member made of disk-shaped ceramics having a protrusion 7 on which a sample 2 is placed on one main surface, and can be formed of a silicon carbide sintered body. The thickness (Z direction) of the first substrate 3 is set to, for example, 5 mm or more and 30 mm or less, and the thermal conductivity is set to, for example, 150 W / m · K or more and 200 W / m · K or less. The thermal conductivity is measured by a laser flash method using TC-7000 manufactured by ULVAC-RIKO at room temperature (23 ° C.). Hereinafter, the thermal conductivity of each member is measured by the same method as the thermal conductivity of the first substrate 3.

第2基板4は、第1基板3と同様に、円板状のセラミックスからなる部材であり、炭化珪素質焼結体によって形成することができる。この第2基板4は、厚みが例えば1mm以上20mm以下に設定され、熱伝導率が例えば40W/m・K以上80W/m・K以下に設定されている。なお、本実施形態において、第2基板4の厚みは第1基板3の厚みよりも小さく形成されており、その結果、載置部材1の機械的強度を高めることができる。   Similar to the first substrate 3, the second substrate 4 is a member made of disk-shaped ceramics and can be formed of a silicon carbide sintered body. The thickness of the second substrate 4 is set to, for example, 1 mm or more and 20 mm or less, and the thermal conductivity is set to 40 W / m · K or more and 80 W / m · K or less, for example. In the present embodiment, the thickness of the second substrate 4 is smaller than the thickness of the first substrate 3, and as a result, the mechanical strength of the mounting member 1 can be increased.

接合層5は、第1基板3および第2基板4を接続するための接着材として機能するものであり、ガラスによって形成することができ、該ガラスとしては、酸化ケイ素を主成分として、酸化マグネシウム、酸化ナトリウム、酸化カルシウム又は硼酸等の副成分を含むものを用いることができる。このように酸化ケイ素を含むガラスを用いることによって、該酸化ケイ素が第1基板3および第2基板4の炭化ケイ素と結合し、第1基板3と第2基板4とを強固に接着させることができる。   The bonding layer 5 functions as an adhesive for connecting the first substrate 3 and the second substrate 4 and can be formed of glass, which includes silicon oxide as a main component and magnesium oxide. In addition, those containing subcomponents such as sodium oxide, calcium oxide or boric acid can be used. Thus, by using the glass containing silicon oxide, the silicon oxide is bonded to the silicon carbide of the first substrate 3 and the second substrate 4, and the first substrate 3 and the second substrate 4 can be firmly bonded. it can.

この接合層5は、厚みが例えば1μm以上10μm以下に設定され、熱伝導率が例えば1W/m・K以上5W/m・K以下に設定されている。   The bonding layer 5 has a thickness set to, for example, 1 μm or more and 10 μm or less, and a thermal conductivity set to, for example, 1 W / m · K or more and 5 W / m · K or less.

流路6は、水または冷却溶剤等の液体の冷媒を流すことによって、試料2の温度を調節するものであり、高さ(Z方向)よりも幅(X方向)の大きい直方体状に形成されている。この第1流路7は、高さが例えば1mm以上5mm以下に設定され、幅が例えば2mm以上5mm以下に設定されている。なお、流路6は、冷媒を流す冷媒流路の他に、気体を吸引して試料2を真空吸着するためのエア流路を有していても構わない。   The flow path 6 adjusts the temperature of the sample 2 by flowing a liquid refrigerant such as water or a cooling solvent, and is formed in a rectangular parallelepiped shape having a width (X direction) larger than a height (Z direction). ing. The first flow path 7 has a height set to, for example, 1 mm to 5 mm and a width set to, for example, 2 mm to 5 mm. The flow path 6 may have an air flow path for sucking gas and vacuum-adsorbing the sample 2 in addition to the refrigerant flow path for flowing the refrigerant.

一方、本実施形態において、第1基板3は、他主面に流路6の内壁を構成する溝部8を有し、第2基板4の一主面は、第1基板3の他主面に接合層5を介して接続された第1領域9と、流路6の内壁を構成する第2領域10とを有し、該第2領域10が第1領域9と同一平面をなしている。このように、流路6が第1基板3に形成されているため、流路6によって、接合層5よりも熱伝導率の高い第1基板3を介して、第1基板3に載置される試料2の温度を制御することができるため、試料2の温度をより一定に維持することできる。その結果、露光時における試料2の変形を低減した、高精度の露光装置を得ることができる。なお、第1基板3の熱伝導率は、接合層5の熱伝導率の例えば50倍以上120倍以下に設定されている。   On the other hand, in the present embodiment, the first substrate 3 has a groove 8 constituting the inner wall of the flow path 6 on the other main surface, and one main surface of the second substrate 4 is formed on the other main surface of the first substrate 3. The first region 9 connected via the bonding layer 5 and the second region 10 constituting the inner wall of the flow path 6 are provided, and the second region 10 is flush with the first region 9. Thus, since the flow path 6 is formed in the 1st board | substrate 3, it is mounted in the 1st board | substrate 3 through the 1st board | substrate 3 with higher heat conductivity than the joining layer 5 by the flow path 6. FIG. Since the temperature of the sample 2 can be controlled, the temperature of the sample 2 can be kept more constant. As a result, a highly accurate exposure apparatus that can reduce deformation of the sample 2 during exposure can be obtained. The thermal conductivity of the first substrate 3 is set to, for example, 50 times or more and 120 times or less of the thermal conductivity of the bonding layer 5.

また、本実施形態において、溝部8は、底面11と、側面12と、底面11および側面12を接続する曲面状の接続部13を有している。このように、底面11および側面12の接続部13が曲面状(R形状)であるため、該接続部13における抵抗を低減し、流路内にて冷媒を効率良く流動させることができる。なお、溝部8の長手方向に垂直な断面において、接続部13の曲率半径は、例えば0.1mm以上1mm以下に設定されている。   In the present embodiment, the groove 8 has a bottom surface 11, a side surface 12, and a curved connection portion 13 that connects the bottom surface 11 and the side surface 12. Thus, since the connection part 13 of the bottom face 11 and the side surface 12 has a curved surface shape (R shape), the resistance in the connection part 13 can be reduced and the refrigerant can flow efficiently in the flow path. In the cross section perpendicular to the longitudinal direction of the groove portion 8, the radius of curvature of the connecting portion 13 is set to, for example, 0.1 mm or more and 1 mm or less.

また、本実施形態において、第1基板3は、炭化珪素質焼結体からなる。このように炭化珪素質焼結体を用いることによって、第1基板3の熱伝導率を高めることができるため、試料2に露光装置のレーザー等が照射されて局所的に熱が印加された際に、この熱を第1基板3によって良好に放散することができる。   In the present embodiment, the first substrate 3 is made of a silicon carbide based sintered body. Since the thermal conductivity of the first substrate 3 can be increased by using the silicon carbide sintered body in this way, when the sample 2 is irradiated with a laser or the like of the exposure apparatus and heat is locally applied. In addition, this heat can be dissipated well by the first substrate 3.

また、本実施形態において、第1基板3および第2基板4は、双方ともに炭化珪素質焼結体からなり、同材質からなる。このように第1基板3および第2基板4を同材質によって形成することによって、接合層5によって第1基板3および第2基板4を強固に接着することができる。   Moreover, in this embodiment, both the 1st board | substrate 3 and the 2nd board | substrate 4 consist of a silicon carbide sintered body, and consist of the same material. In this way, the first substrate 3 and the second substrate 4 are formed of the same material, so that the first substrate 3 and the second substrate 4 can be firmly bonded by the bonding layer 5.

また、本実施形態において、第1基板3を構成する炭化珪素質焼結体の熱伝導率は、第2基板4を構成する炭化珪素質焼結体の熱伝導率よりも高い。その結果、第1基板3の熱伝導率を高めることによって、試料2に露光装置のレーザー等が照射されて局所的に熱が印加された際に、第1基板3を介して流路6に効率良く熱を伝えて、試料2の温度を略一定に維持することができる。さらに、第2基板4の熱伝導率を低くすることによって、流路6に第2基板4を介して外部と熱が出入りすることを低減することができ、流路6によって試料2を良好に温度制御することができる。   In this embodiment, the thermal conductivity of the silicon carbide based sintered body constituting the first substrate 3 is higher than the thermal conductivity of the silicon carbide based sintered body constituting the second substrate 4. As a result, by increasing the thermal conductivity of the first substrate 3, the sample 2 is irradiated with a laser or the like of the exposure apparatus and heat is locally applied to the flow path 6 through the first substrate 3. Heat can be transferred efficiently and the temperature of the sample 2 can be maintained substantially constant. Furthermore, by lowering the thermal conductivity of the second substrate 4, it is possible to reduce the flow of heat into and out of the flow path 6 through the second substrate 4. The temperature can be controlled.

第1基板3を構成する高熱伝導率の炭化珪素質焼結体は、炭化珪素に炭素の化合物およびホウ素の化合物を焼結助剤として添加して固相焼結させたものを用いることができる。この炭化硅素質焼結体の焼結助剤として、ホウ素の化合物をホウ素換算で0.2質量%以上1.5質量%以下、炭素の化合物を炭素換算で1質量%以上3質量%以下の範囲となるよう添加することが好ましい。また、この炭化硅素質焼結体の焼結助剤として、高熱伝導率の観点から、TiC、TiN、TiO等のチタンの化合物をチタン換算で200ppm以上、且つ400ppm以下の範囲で添加することが好ましい。   The silicon carbide sintered body having a high thermal conductivity constituting the first substrate 3 may be obtained by solid-phase sintering by adding a carbon compound and a boron compound as sintering aids to silicon carbide. . As a sintering aid for the silicon carbide sintered body, the boron compound is 0.2% by mass or more and 1.5% by mass or less in terms of boron, and the carbon compound is 1% by mass or more and 3% by mass or less in terms of carbon. It is preferable to add so that it may become a range. Further, as a sintering aid for this silicon carbide sintered body, it is possible to add a titanium compound such as TiC, TiN, TiO or the like in a range of 200 ppm or more and 400 ppm or less in terms of titanium from the viewpoint of high thermal conductivity. preferable.

第2基板4を構成する低熱伝導率の炭化珪素質焼結体は、炭化珪素にアルミナを添加して液相焼結させたものを用いることができる。また、この第2基板4は、アルミナを焼結助剤として用いることによって酸化ケイ素等のガラス質を含むため、第1基板3と比較して接合層5との接着強度を高めることができる。   As the silicon carbide sintered body having a low thermal conductivity constituting the second substrate 4, it is possible to use a silicon carbide sintered body obtained by adding alumina to liquid phase sintering. In addition, since the second substrate 4 contains glassy material such as silicon oxide by using alumina as a sintering aid, the adhesive strength with the bonding layer 5 can be increased as compared with the first substrate 3.

一方、本実施形態において、第2基板4は、第1領域9が接合層4に接着されており、第2領域10が接合層4に接着されておらず流路6内に露出している。その結果、該接合層4の流路6内への侵入を低減し、流路6内において液体または気体を効率良く流動させ
ることができる。
On the other hand, in the present embodiment, in the second substrate 4, the first region 9 is bonded to the bonding layer 4, and the second region 10 is not bonded to the bonding layer 4 and is exposed in the flow path 6. . As a result, the penetration of the bonding layer 4 into the flow path 6 can be reduced, and the liquid or gas can flow efficiently in the flow path 6.

かくして、上述した載置用部材1は、露光装置において、試料2の温度を一定に維持する機能を有する試料2の載置手段として用いられる。   Thus, the mounting member 1 described above is used as a mounting means for the sample 2 having a function of keeping the temperature of the sample 2 constant in the exposure apparatus.

次に、上述した載置用部材1の製造方法を説明する。   Next, the manufacturing method of the mounting member 1 described above will be described.

(1)他主面に溝部8を有する第1基板3を作製する。具体的には、例えば以下のように行う。   (1) The 1st board | substrate 3 which has the groove part 8 in another main surface is produced. Specifically, for example, it is performed as follows.

まず、主成分として炭化珪素の粉末に、添加剤として少なくともホウ素の化合物及び炭素の化合物の粉末を添加した原料粉末を得る。次に、この原料粉末を種々の成形方法を用いて成形して成形体を得た後、この成形体を例えば2000℃以上2100℃以下で焼成する。次に、研削加工で第1基板3の他主面に溝部8を形成する。   First, a raw material powder obtained by adding at least a boron compound powder and a carbon compound powder as additives to silicon carbide powder as a main component is obtained. Next, after this raw material powder is molded using various molding methods to obtain a molded body, this molded body is fired at, for example, 2000 ° C. or higher and 2100 ° C. or lower. Next, the groove 8 is formed on the other main surface of the first substrate 3 by grinding.

なお、成形体を1900℃以上2100℃以下の低温で一次焼成した後、1800℃以上2000℃以下、圧力が180MPa以上の不活性ガス雰囲気にてHIP処理を行うことによって、成形体を焼成しても構わない。この場合、第1基板3のボイドを低減して、パーティクルの吸着を低減することができる。   The molded body is first fired at a low temperature of 1900 ° C. or higher and 2100 ° C. or lower, and then subjected to HIP treatment in an inert gas atmosphere of 1800 ° C. or higher and 2000 ° C. or lower and a pressure of 180 MPa or higher. It doesn't matter. In this case, the void of the first substrate 3 can be reduced, and the adsorption of particles can be reduced.

(2)一主面に平坦な領域を有する第2基板4を作製する。具体的には、例えば以下のように行う。   (2) The second substrate 4 having a flat region on one main surface is produced. Specifically, for example, it is performed as follows.

まず、主成分として炭化珪素の粉末に、添加剤として少なくともアルミナの粉末を添加した原料粉末を得る。次に、この原料粉末を種々の成形方法を用いて成形して成形体を得た後、この成形体を例えば1900℃以上2000℃以下で焼成する。   First, a raw material powder obtained by adding at least alumina powder as an additive to silicon carbide powder as a main component is obtained. Next, after this raw material powder is molded using various molding methods to obtain a molded body, the molded body is fired at, for example, 1900 ° C. or higher and 2000 ° C. or lower.

(3)第1基板3および第2基板4を接合層5で接着させる。具体的には、例えば以下のように行う。   (3) The first substrate 3 and the second substrate 4 are bonded with the bonding layer 5. Specifically, for example, it is performed as follows.

まず、第1基板3の他主面および第2基板4の一主面のそれぞれにガラスからなる接合材を塗布する。次に、第1基板3の他主面と第2基板4の一主面とを重ね合わせ、1900℃以上2000℃以下で焼成をすることによって、接合材を接合層5としつつ、第1基板3の他主面と第2基板4の一主面とを接合層5を介して接着させる。   First, a bonding material made of glass is applied to each of the other main surface of the first substrate 3 and one main surface of the second substrate 4. Next, the other main surface of the first substrate 3 and one main surface of the second substrate 4 are overlapped and baked at 1900 ° C. or more and 2000 ° C. or less, so that the bonding material is used as the bonding layer 5 and the first substrate. The other main surface of 3 and the one main surface of the second substrate 4 are bonded via the bonding layer 5.

ここで、第1基板3の他主面の溝部8を、第2基板4の一主面の平坦な領域に重ね合わせることによって、第1基板3の溝部8と第2基板4の第2領域10とに取り囲まれた流路6を形成することができる。   Here, the groove portion 8 of the first substrate 3 and the second region of the second substrate 4 are overlapped by overlapping the groove portion 8 of the other principal surface of the first substrate 3 with the flat region of the one principal surface of the second substrate 4. A flow path 6 surrounded by 10 can be formed.

また、第1基板3の他主面および第2基板4の一主面のそれぞれに接合材を塗布する際には、第1基板3の他主面の溝部8以外の領域に接合材を塗布するとともに、第2基板4の一主面の第1領域9に接合材を塗布することによって、第2領域10を流路6内に露出させることができる。   Further, when the bonding material is applied to each of the other main surface of the first substrate 3 and one main surface of the second substrate 4, the bonding material is applied to a region other than the groove portion 8 on the other main surface of the first substrate 3. At the same time, the second region 10 can be exposed in the flow path 6 by applying a bonding material to the first region 9 on the one main surface of the second substrate 4.

(4)ブラスト加工またはエッチング加工を用いることによって、第1基板3の一主面に突起7を形成する。   (4) Protrusions 7 are formed on one main surface of the first substrate 3 by using blasting or etching.

以上のようにして、載置部材1を作製することができる。   The mounting member 1 can be manufactured as described above.

本発明は上述した実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲
において種々の変更、改良、組み合わせ等が可能である。
The present invention is not limited to the above-described embodiments, and various modifications, improvements, combinations, and the like can be made without departing from the spirit of the present invention.

例えば、上述した実施形態において、第1基板の突起上に試料を載置する構成を例に説明したが、第1基板は突起を有していなくてもよい。また、第1基板は、真空吸着用の多孔質体でも構わないし、真空吸着用の穴部を複数有してもいても構わない。   For example, in the above-described embodiment, the configuration in which the sample is placed on the protrusion of the first substrate has been described as an example, but the first substrate may not have the protrusion. The first substrate may be a porous body for vacuum suction or may have a plurality of holes for vacuum suction.

また、上述した実施形態において、第1基板および第2基板が円板状である構成を例に説明したが、第1基板および第2基板は平板状であればよい。   In the above-described embodiment, the configuration in which the first substrate and the second substrate are disk-shaped has been described as an example. However, the first substrate and the second substrate may be flat.

また、上述した実施形態において、第1基板が炭化珪素質焼結体からなる構成を例に説明したが、第1基板は接合層よりも熱伝導率の高いセラミックスによって形成すればよく、例えば窒化珪素質焼結体、窒化アルミニウム質焼結体またはジルコニア質焼結体等によって形成しても構わない。   Further, in the above-described embodiment, the configuration in which the first substrate is made of a silicon carbide sintered body has been described as an example. It may be formed of a silicon sintered body, an aluminum nitride sintered body, a zirconia sintered body, or the like.

また、上述した実施形態において、第2基板が第1基板と同材質からなる構成を例に説明したが、第2基板は、第1基板と異なる材質でもよく、例えば窒化珪素質焼結体、窒化アルミニウム質焼結体またはジルコニア質焼結体等によって形成することができる。   In the above-described embodiment, the second substrate is described as an example of a configuration made of the same material as the first substrate. However, the second substrate may be made of a material different from that of the first substrate, for example, a silicon nitride sintered body, It can be formed of an aluminum nitride sintered body or a zirconia sintered body.

また、上述した実施形態において、接合層が第2基板の第1領域には接着せずに第2領域に接着した構成を例に説明したが、接合層は、第2基板の第1領域に接着していても構わないし、第1基板の溝部の側面に接着していても構わない。また、図2(a)に示すように、接合層5Aは、第1領域9Aと溝部8Aの側面12Aの双方に接着するとともに流路6A側に凹曲面を具備したフィレット部14Aを有していても構わない。この場合、フィレット部14Aによって第1基板3Aと第2基板4Aとの接着強度を高めて、流路6A内の冷媒の漏れを抑制することができる。また、フィレット部14Aの凹曲面によって流路内にて冷媒を効率良く流動させることができる。このようなフィレット部14Aは、第1基板3Aと第2基板4Aとを接着する際に、接合材を塗布する箇所や量を調節することによって、形成することができる。   In the above-described embodiment, the configuration in which the bonding layer is bonded to the second region without being bonded to the first region of the second substrate has been described as an example. However, the bonding layer is formed on the first region of the second substrate. You may adhere | attach and may adhere | attach to the side surface of the groove part of a 1st board | substrate. As shown in FIG. 2A, the bonding layer 5A has a fillet portion 14A that adheres to both the first region 9A and the side surface 12A of the groove 8A and has a concave curved surface on the flow path 6A side. It doesn't matter. In this case, the adhesive strength between the first substrate 3A and the second substrate 4A can be increased by the fillet portion 14A, and leakage of the refrigerant in the flow path 6A can be suppressed. Further, the refrigerant can be efficiently flowed in the flow path by the concave curved surface of the fillet portion 14A. Such a fillet portion 14A can be formed by adjusting the location and amount of the bonding material applied when bonding the first substrate 3A and the second substrate 4A.

また、上述した実施形態において、第2基板の厚みが第1基板の厚みよりも小さい構成を例に説明したが、第1基板の厚みが第2基板の厚みよりも小さくてもよく、この場合、流路と試料との距離を短くして試料の温度を良好に制御することができる。   In the above-described embodiment, the configuration in which the thickness of the second substrate is smaller than the thickness of the first substrate has been described as an example. However, the thickness of the first substrate may be smaller than the thickness of the second substrate. The distance between the flow path and the sample can be shortened to favorably control the temperature of the sample.

また、上述した実施形態において、流路が第1基板の溝部と第2基板の第2領域に取り囲まれてなる構成を例に説明したが、図2(b)に示すように、流路6Bは第1基板3Bの内部に形成された貫通孔により形成しても構わない。   Further, in the above-described embodiment, the configuration in which the flow path is surrounded by the groove portion of the first substrate and the second region of the second substrate has been described as an example. However, as illustrated in FIG. May be formed by through holes formed in the first substrate 3B.

1 載置用部材
2 試料
3 第1基板
4 第2基板
5 接合層
6 流路
7 突起
8 溝部
9 第1領域
10 第2領域
11 底面
12 側面
13 接続部
DESCRIPTION OF SYMBOLS 1 Mounting member 2 Sample 3 1st board | substrate 4 2nd board | substrate 5 Bonding layer
6 Channel 7 Projection 8 Groove 9 First Region 10 Second Region 11 Bottom 12 Side 13 Connection Portion

Claims (6)

流路を有する載置用部材において、
一主面に試料が載置され、他主面に前記流路の内壁を構成する溝部を有するセラミックスからなる第1基板と、
一主面が該第1基板の他主面に接続されたセラミックスからなる第2基板と、
前記第1基板と前記第2基板との間に介在した、前記第1基板よりも熱伝導率の低いガラスからなる接合層とを備え、
前記第2基板の前記一主面は、前記第1基板の前記他主面に前記接合層を介して接続された第1領域と、前記流路の内壁を構成する第2領域とを有し、該第2領域は、前記第1領域と同一平面をなすことを特徴とする載置用部材。
In the mounting member having a flow path,
A first substrate made of ceramic having a sample placed on one main surface and having a groove portion forming the inner wall of the flow path on the other main surface;
A second substrate made of ceramics with one main surface connected to the other main surface of the first substrate;
A bonding layer made of glass having a lower thermal conductivity than the first substrate, interposed between the first substrate and the second substrate;
The one main surface of the second substrate includes a first region connected to the other main surface of the first substrate through the bonding layer, and a second region constituting an inner wall of the flow path. The mounting member, wherein the second region is flush with the first region.
請求項1に記載の載置用部材において、
前記溝部は、底面と、側面と、前記底面および前記側面を接続する曲面状の接続部とを有することを特徴とする載置用部材。
The mounting member according to claim 1,
The groove portion has a bottom surface, a side surface, and a curved connection portion that connects the bottom surface and the side surface.
請求項1に記載の載置用部材において、
前記第1基板および前記第2基板は、炭化珪素質焼結体からなることを特徴とする載置用部材。
The mounting member according to claim 1,
The first substrate and the second substrate are made of a silicon carbide sintered body, and the mounting member is characterized in that:
請求項1に記載の載置用部材において、
前記第1基板の熱伝導率は、前記第2基板の熱伝導率よりも高いことを特徴とする載置用部材。
The mounting member according to claim 1,
The mounting member, wherein the thermal conductivity of the first substrate is higher than the thermal conductivity of the second substrate.
請求項1に記載の載置用部材において、
前記流路には、冷媒が流れることを特徴とする載置用部材。
The mounting member according to claim 1,
A mounting member, wherein a refrigerant flows through the flow path.
一主面に試料が載置されるセラミックスからなる第1基板と、
該第1基板の他主面に接続したセラミックスからなる第2基板と、
前記第1基板と前記第2基板との間に介され、前記第1基板よりも熱伝導率の低いガラスからなる接合層と、
前記第1基板に形成された流路とを備えたことを特徴とする載置用部材。
A first substrate made of ceramic on which a sample is placed on one main surface;
A second substrate made of ceramics connected to the other main surface of the first substrate;
A bonding layer made of glass that is interposed between the first substrate and the second substrate and has lower thermal conductivity than the first substrate;
A mounting member comprising: a flow path formed in the first substrate.
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