JP2010232611A - Wafer processing tape - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wafer processing tape with which intervals between semiconductor chips as individual pieces can be widened uniformly and sufficiently, and expanding force which is large enough to part a semiconductor wafer into chips can be obtained in an expand step. <P>SOLUTION: An adhesive film 20 is sectioned into a wafer fixing region 30 of a region where the semiconductor wafer is stuck (fixed) and a non-fixation region 31 excluding the wafer fixing region 30, and constituted so as to satisfy A<B, wherein (A) is a modulus value of the wafer fixing region 30 and (B) is a modulus value of the non-fixation region 31. Consequently, when the adhesive film 20 is expanded, the wafer fixing region 30 can be expanded with priority to the non-fixation region 31. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a wafer processing tape used in a manufacturing process of a semiconductor device having an expanding process.

  In the manufacturing process of a semiconductor device by a new technology developed in recent years, after attaching a stretchable wafer processing tape to a semiconductor wafer, a step of dicing the semiconductor wafer in units of chips, a step of expanding the wafer processing tape, Further, a step of picking up the diced chip and a die bonding step are performed.

As a wafer processing tape used in the manufacturing process of the semiconductor device, a wafer processing tape in which an adhesive layer is provided on a base film, or a structure in which an adhesive layer is further laminated on the adhesive layer. A general semiconductor wafer dicing process, expanding process, and pick-up process that have been proposed and already put into practical use will be described with reference to FIG. As shown in FIG. 9A, first, a semiconductor wafer 91 and a wafer processing tape 90 in which a base film 93a, an adhesive layer 93b formed thereon, and an adhesive layer 94 are laminated in this order. The ring frame 92 is bonded together. Here, the ring frame 92 is bonded to the pressure-sensitive adhesive layer 93 b, and the semiconductor wafer 91 is bonded to the adhesive layer 94.

  Next, as shown in FIG. 9B, the wafer processing tape 90 is sucked and supported by the suction stage 96 from the base film 93a side. Then, the semiconductor wafer 91 and the adhesive layer 94 are diced into units of semiconductor chips 97 by the dicing blade 95 and separated into individual pieces.

  Thereafter, as shown in FIG. 9C, an expanding process is performed in which the wafer processing tape 90 holding the diced semiconductor chip 97 and the adhesive layer 94 is stretched in the circumferential direction of the ring frame 92. Specifically, with respect to the wafer processing tape 90 in a state where the plurality of diced semiconductor chips 97 and the adhesive layer 94 are held, a hollow cylindrical push-up member 98 is provided from the lower surface side of the wafer processing tape 90. Then, the wafer processing tape 90 is stretched in the circumferential direction of the ring frame 92. By the expanding step, it is possible to widen the distance between the chips and improve the chip recognizability by a CCD camera or the like, and to prevent re-adhesion of the chips caused by contact between adjacent chips during pickup.

  After performing the expanding process, a pick-up process for picking up the semiconductor chip 97 and the adhesive layer 94 is performed while the wafer processing tape 90 is expanded.

  As a method for dividing a semiconductor wafer, there has been proposed a method for dividing a wafer in a non-contact manner using a laser processing apparatus.

  For example, Patent Document 1 discloses that a semiconductor substrate is obtained by irradiating a laser beam with focused light inside a semiconductor substrate on which a sheet wafer processing tape with a die bond resin layer (adhesive layer) interposed is attached. Forming a modified region by multiphoton absorption in the interior of the substrate, forming a portion to be divided in the modified region, and expanding the sheet to divide the semiconductor substrate and the die bond resin layer along the portion to be divided. A method for dividing a semiconductor substrate including a process is disclosed.

  In the method for dividing a semiconductor substrate disclosed in Patent Document 1, a semiconductor wafer and a die bond resin layer (adhesive layer) can be divided in a non-contact manner by laser light irradiation and wafer processing tape expansion, so a dicing blade is used. The semiconductor wafer can be divided without causing chipping as in the case.

JP 2003-338467 A

  As described above, the expanding process is performed in order to widen the distance between semiconductor chips separated by a dicing blade (hereinafter referred to as “chips”), or the semiconductor wafer and the adhesive layer irradiated with laser light in units of chips. Implemented to break up. However, in the wafer processing tape expand as described in FIG. 9, the wafer processing tape is locally stretched at the portion in contact with the push-up member 98, and the interval between the chips cannot be sufficiently widened or the interval is increased. If the chips are not uniformly spread, chip recognition failure by a CCD camera or the like occurs, and there is a problem that chips are damaged due to contact between adjacent chips when picking up the chips. Further, in the expansion of the wafer processing tape by the method disclosed in Patent Document 1, since the expanding force sufficient to divide the semiconductor wafer and the adhesive layer into chips is not obtained, the semiconductor wafer and the adhesive layer There is also a problem that the adhesive layer cannot be completely separated or that the adhesive layer is reattached.

  Therefore, the present invention has been made to solve the above-described problems, and in the expanding process, the interval between the separated semiconductor chips can be uniformly and sufficiently widened, and the semiconductor wafer is manufactured. An object of the present invention is to provide a wafer processing tape capable of obtaining an expanding force sufficient to divide into chips.

  As a result of intensive studies on the above problems, the present inventors have fixed a wafer processing tape having a base film and an adhesive layer provided on the base film to a wafer fixed to which a semiconductor wafer is bonded. When the area for use and the area for non-fixation excluding the area for fixing the wafer are distinguished, the modulus value of the area for non-fixation is made larger than that of the area for fixing the wafer of the base film and the adhesive layer. By using a wafer processing tape, when expanded, the wafer fixing area is preferentially extended over the non-fixing area, and the interval between the separated semiconductor chips is uniformly and sufficiently widened, or The present inventors have found that an expanding force sufficient to divide a semiconductor wafer into chips is obtained, and the present invention has been completed.

  That is, the wafer processing tape according to the first aspect of the present invention is a wafer processing tape having a base film and an adhesive layer provided on the base film, the base film and the tape The modulus value (A) of the wafer fixing area to which the semiconductor wafer of the wafer processing tape is bonded, and the wafer fixing area of the wafer processing tape, in the modulus value of the laminate formed with the adhesive layer The modulus value (B) of the non-fixing area except for satisfies the relationship of A <B.

  Here, the wafer fixing area may include not only the area (bonding area) on the wafer processing tape to which the semiconductor wafer is bonded, but also a peripheral area in the vicinity of the bonding area. For example, in the wafer processing tape as shown in FIG. 9C, the wafer fixing region 30 is surrounded by the “contact portion with the push-up member 98” which is a region slightly wider than the region where the semiconductor wafer is bonded. It can also be an “inner region”.

  The wafer processing tape according to the second aspect of the present invention is the wafer processing tape according to the first aspect of the present invention, wherein the modulus value (A) of the wafer fixing area and the non-fixing area are The modulus value (B) is a 5% modulus measured value.

  A wafer processing tape according to a third aspect of the present invention is the wafer processing tape according to the first or second aspect of the present invention, wherein the thickness of the laminate is not in the wafer fixing region. It is characterized by being thinner than the fixing area.

  The wafer processing tape according to the fourth aspect of the present invention is the wafer processing tape according to any one of the first to third aspects of the present invention, wherein the pressure-sensitive adhesive layer in the non-fixing region is It is harder than the pressure-sensitive adhesive layer in the wafer fixing region.

  A wafer processing tape according to a fifth aspect of the present invention is the wafer processing tape according to any one of the first to fourth aspects of the present invention, wherein the material of the base film in the wafer fixing region is as follows. And the material value of the base film in the non-fixing region are different from each other so that the modulus value (A) of the wafer fixing region and the modulus value (B) of the non-fixing region are A <B It is characterized by the relationship.

  The tape for wafer processing concerning the 6th aspect of this invention is a tape for wafer processing which has a base film and the adhesive layer provided on the said base film, Comprising: The said base film and the said adhesive And a modulus value of a peripheral region of the central region, and a modulus value of a peripheral region of the central region. (D) satisfies the relationship of C <D.

  A wafer processing tape according to a seventh aspect of the present invention is the above-described wafer processing tape according to the sixth aspect of the present invention, wherein the modulus value (C) of the central region and the modulus value (D) of the peripheral region are the same. ) Is an actually measured value of 5% modulus.

  A wafer processing tape according to an eighth aspect of the present invention is the wafer processing tape according to the sixth or seventh aspect of the present invention, wherein the thickness of the laminate is in the peripheral area in the central area. It is characterized by being thinner.

  A wafer processing tape according to a ninth aspect of the present invention is the wafer processing tape according to any one of the sixth to eighth aspects of the present invention, wherein the adhesive layer in the peripheral region is the center. It is characterized by being harder than the adhesive layer in the region.

  The wafer processing tape according to a tenth aspect of the present invention is the wafer processing tape according to any one of the sixth to ninth aspects of the present invention, wherein the material of the base film in the central region and the tape That the material value of the base film in the peripheral region is different, the modulus value (C) of the central region and the modulus value (D) of the peripheral region have a relationship of C <D. Features.

  A wafer processing tape according to an eleventh aspect of the present invention is the wafer processing tape according to any one of the first to tenth aspects of the present invention, wherein an adhesive layer is provided on the pressure-sensitive adhesive layer. It is characterized by that.

  When the wafer processing tape of the present invention in which the modulus value (B) of the non-fixing area is larger than the modulus value (A) of the wafer fixing area is used, the wafer fixing area is not fixed when expanded. It can be preferentially extended over the service area. Therefore, it is possible to uniformly and sufficiently widen the intervals between the separated semiconductor chips, reduce chip recognition failure by a CCD camera or the like, and contact the adjacent chips when picking up the chips. Chip breakage can be reduced. Further, an expanding force sufficient to divide the semiconductor wafer into chips can be obtained, and the semiconductor wafer and the adhesive layer can be favorably separated and the adhesive layer can be prevented from being reattached.

(A) And (b) is a figure for demonstrating the fundamental view of this invention. (A), (b) and (c) are sectional views of tapes for wafer processing according to the first, second and third embodiments of the present invention, respectively. (A), (b) and (c) is sectional drawing of the tape for wafer processing concerning the 4th, 5th, and 6th embodiment of this invention, respectively. (A) And (b) is sectional drawing of the tape for wafer processing concerning the 7th and 8th embodiment of this invention. (A) And (b) is sectional drawing of the tape for wafer processing concerning other embodiment of this invention. These are sectional drawings of the tape for wafer processing concerning other embodiments of the present invention. These are sectional drawings of the tape for wafer processing concerning other embodiments of the present invention. (A) And (b) is a figure for demonstrating the state of the wafer processing tape in which the semiconductor wafer in the front and back was bonded in the expanding process. (A), (b) and (c) is a figure for demonstrating the dicing process of a semiconductor wafer, an expanding process, and a pick-up process.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a diagram for explaining the basic concept of the present invention.

  The wafer processing tape includes a wafer processing tape 22 in which an adhesive layer 2 is provided on a base film 1 as shown in FIG. 1 (a), and a base material as shown in FIG. 1 (b). There is a wafer processing tape 21 in which the film 1, the pressure-sensitive adhesive layer 2, and the adhesive layer 3 are laminated in this order. Hereinafter, the laminate formed of the base film 1 and the adhesive layer 2 in the wafer processing tapes 21 and 22 is referred to as an adhesive film 20.

  In the present invention, as shown in FIGS. 1A and 1B, wafer processing tapes 21 and 22 are attached to a wafer fixing region 30 in a region where a semiconductor wafer is bonded (fixed) and a wafer fixing tape. The area is divided into non-fixing areas 31 excluding the area 30, and the modulus value (A) of the adhesive film 20 in the wafer fixing area 30 and the modulus value (B) of the adhesive film 20 in the non-fixing area 31 have the following relationship: It is configured to satisfy the formula (1). Here, the modulus value refers to the stress when a certain strain is applied to the object (elastic body), and it can be said that an object having a larger modulus value is more difficult to deform with respect to the strain.

A <B (1)
The wafer fixing area 30 may include not only the area (bonding area) on the wafer processing tape to which the semiconductor wafer is bonded, but also a peripheral area in the vicinity of the bonding area. For example, in the wafer processing tape as shown in FIG. 9C, the wafer fixing region 30 is surrounded by the “contact portion with the push-up member 98” which is a region slightly wider than the region where the semiconductor wafer is bonded. It can also be an “inner region”.

  The modulus value (A) of the wafer fixing region 30 and the modulus value (B) of the non-fixing region 31 are 5% modulus measured values (unit: N / 10 mm). Here, in the expanding process, since the elongation rate when expanding the actual wafer processing tape is about 2% to 11%, the elongation rate (modulus strength) is set to 5%, which is an intermediate value. Other modulus strengths (for example, 2% to 11%) may be used.

  In the expanding step, the adhesive film 20 preferentially extends from the region that is easy to stretch. Therefore, by making the modulus value (B) of the non-fixing region 31 larger than the modulus value (A) of the wafer fixing region 30, the wafer The fixing area 30 extends preferentially over the non-fixing area 31. This is because the modulus value (A) of the wafer fixing region 30 and the modulus value (B) of the non-fixing region 31 satisfy the above relational expression (1). This is because the region is harder to deform than the wafer fixing region 30. As a result, the force when expanding the adhesive film 20 is preferentially transmitted to the wafer fixing region 30, and the wafer fixing region 30 can be satisfactorily stretched.

  Further, as the difference between the modulus value (B) of the non-fixing area 31 and the modulus value (A) of the wafer fixing area 30 is increased, the wafer fixing area 30 preferentially extends over the non-fixing area 31. . As a result, the force for expanding the adhesive film 20 is transmitted to the wafer fixing region 30 with higher priority, and the wafer fixing region 30 can be stretched better.

  In the present invention, the modulus value (C) of at least the central region 32 of the wafer fixing region 30 and the modulus value (D) of the peripheral region 33 of the central region 32 satisfy the following relational expression (2). Configure to meet.

C <D (2)
The modulus value (C) of the central region 32 and the modulus value (D) of the peripheral region 33 are 5% modulus measured values (unit: N / 10 mm).

  Similar to the relationship between the wafer fixing region 30 and the non-fixing region 31 described above, by making the modulus value (D) of the peripheral region 33 larger than the modulus value (C) of the central region 32, the central region 32 becomes peripheral. It extends with priority over the region 33. As a result, the force when expanding the adhesive film 20 is preferentially transmitted to the central region 32, and the central region 32 can be satisfactorily stretched.

  Further, as the difference between the modulus value (D) of the peripheral region 33 and the modulus value (C) of the central region 32 is increased, the central region 32 preferentially extends over the peripheral region 33. As a result, the force when expanding the adhesive film 20 is preferentially transmitted to the central region 32, and the central region 32 can be stretched more favorably.

  Next, embodiments of the wafer processing tape according to the present invention will be sequentially described. The method of changing the modulus value (A) of the wafer fixing area 30 and the modulus value (B) of the non-fixing area 31 of the adhesive film of the wafer processing tape is, for example, “a method of changing the thickness of the adhesive film”. , “A method of changing the hardness of the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film”, “a method of changing the material and / or thickness of the base film in the pressure-sensitive adhesive film”, and the like.

(Adhesive film thickness change)
First, an embodiment of a wafer processing tape according to the present invention in which the modulus value is changed by changing the thicknesses of the wafer fixing region 30 and the non-fixing region 31 of the adhesive film 20 will be described. 2A, 2B, and 2C are sectional views of the wafer processing tape 22 according to the first, second, and third embodiments of the present invention, respectively.

  In the embodiment shown in FIG. 2A, the wafer fixing region 30 is concave and the non-fixing region 31 is convex on the surface where the semiconductor wafer is bonded. In the embodiment shown in FIG. 2B, the thickness of the tape 22 is such that the wafer fixing region 30 is concave and the non-fixing region 31 is convex on the side opposite to the surface to which the semiconductor wafer is bonded. This is a wafer processing tape 22 having a varied thickness. Further, in the embodiment shown in FIG. 2C, the wafer processing is performed by changing the thickness so that the wafer fixing region 30 is concave and the non-fixing region 31 is convex on both surfaces of the wafer processing tape 22. Tape 22 for use.

  As shown in FIGS. 2A, 2B, and 2C, the adhesive film 20a is placed on the non-fixing region 31 by m layers, and the adhesive film 20a is placed on the wafer fixing region 30 by n (n <m) layers. In this way, the wafer fixing tape 30 and the non-fixing region 31 have different thicknesses, and the wafer processing tape 22 is formed in which the thickness of the non-fixing region 31 is larger than the thickness of the wafer fixing region 30. To do. 2 (a) and 2 (b) illustrate the state of m = 2 and n = 1, and FIG. 2 (c) illustrates the state of m = 3 and n = 1. Yes. Here, the adhesive film 20a is comprised from the adhesive layer 2a and the base film 1a.

  2A, 2B and 2C, the wafer processing tape 22 has a modulus value (A) of the wafer fixing region 30 and a modulus value (B) of the non-fixing region 31 described above. In the expanding process, the force for expanding the wafer processing tape 22 is preferentially transmitted to the wafer fixing region 30 in the expanding step, and the wafer fixing region 30 can be stretched well.

(Change in the hardness of the adhesive layer of the adhesive film)
Next, an embodiment of the wafer processing tape according to the present invention in which the modulus value is changed by changing the hardness of the adhesive layer 2 of the adhesive film 20 between the wafer fixing region 30 and the non-fixing region 31. Will be described. FIGS. 3A, 3B, and 3C are cross-sectional views of a wafer processing tape 22 according to fourth, fifth, and sixth embodiments of the present invention, respectively.

  In the embodiment shown in FIG. 3A, a harder pressure-sensitive adhesive layer 2b is applied onto the pressure-sensitive adhesive layer 2a of the pressure-sensitive adhesive film 20a in the non-fixing area 31, and the wafer fixing area 30 and the non-fixing area 3 is a wafer processing tape 22 in which the hardness of the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film 20 is changed, and the embodiment shown in FIG. 3B is a base film 1a of the pressure-sensitive adhesive film 20a in the non-fixing region 31. On the surface opposite to the adhesive layer 2a, a harder adhesive layer 2b is applied, and the hardness of the adhesive layer of the adhesive film 20 is increased between the wafer fixing region 30 and the non-fixing region 31. The wafer processing tape 22 is changed. Further, in the embodiment shown in FIG. 3C, the hard adhesive layer 2b is applied to both surfaces of the adhesive film 20a in the non-fixing region 31, and the wafer fixing region 30 and the non-fixing region 31 are The wafer processing tape 22 is obtained by changing the hardness of the adhesive layer of the adhesive film 20.

  As shown in FIGS. 3A, 3 </ b> B, and 3 </ b> C, the hard pressure-sensitive adhesive layer 2 b is gravure-coated on one or both sides of the pressure-sensitive adhesive film 20 a in the non-fixing region 31, and the wafer fixing region 30. The wafer processing tape 22 is formed in which the hardness of the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film 20 in the non-fixing region 31 is made harder than the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film 20.

  3A, 3B and 3C, the wafer processing tape 22 has a modulus value (A) of the wafer fixing region 30 and a modulus value (B) of the non-fixing region 31 described above. In the expanding step, the force for expanding the adhesive film 20 is preferentially transmitted to the wafer fixing region 30 in the expanding step, and the wafer fixing region 30 can be satisfactorily stretched.

(Change in material and / or thickness of base film in adhesive film)
In order to change the respective modulus values of the wafer fixing region 30 and the non-fixing region 31, there is a method of changing the material and thickness of the base film 1 in each part. For example, the base film 1 in the wafer fixing region 30 is formed of ethylene vinyl acetate (EVA) or the like, and the base film 1 in the non-fixing region 31 is made of polypropylene (PP). For example, the base film 1 is made thicker than the base film 1 in the wafer fixing region 30. Note that making the base film 1 in the non-fixing region 31 thicker than the base film 1 in the wafer fixing region 30 is also a modification of the above (change in thickness of the adhesive film).

  FIGS. 4A and 4B are cross-sectional views of the wafer processing tape 21 according to the seventh and eighth embodiments of the present invention. In the embodiment shown in FIG. 4A, an adhesive layer 3 is further laminated on the uppermost pressure-sensitive adhesive layer 2a of the pressure-sensitive adhesive film 20 having the same configuration as the wafer processing tape 22 shown in FIG. In this wafer processing tape 21, the adhesive layer 3 extends from the wafer fixing region 30 to a part of the non-fixing region 31. In the embodiment shown in FIG. 4B, the adhesive layer 3 exists only in the wafer fixing region 30.

  The adhesive film 20 having the same configuration as that of the wafer processing tape 22 shown in FIG. 2A is taken as an example, but the same as the wafer processing tape 22 shown in FIGS. 2B and 2C. It can also be set as the wafer processing tape 21 in which the adhesive layer 3 is further laminated on the uppermost pressure-sensitive adhesive layer 2a of the adhesive film 20 having the configuration.

  5A and 5B are cross-sectional views of a wafer processing tape 21 according to another embodiment of the present invention. In the embodiment shown in FIG. 5A, the adhesive layer 3 is further formed on the uppermost pressure-sensitive adhesive layers 2a and 2b of the pressure-sensitive adhesive film 20 having the same configuration as the wafer processing tape 22 shown in FIG. Are laminated, and the adhesive layer 3 extends from the wafer fixing region 30 to a part of the non-fixing region 31. In the embodiment shown in FIG. 5B, the adhesive layer 3 exists only in the wafer fixing region 30.

  The adhesive film 20 having the same configuration as that of the wafer processing tape 22 shown in FIG. 3A is taken as an example, but the same as the wafer processing tape 22 shown in FIGS. 3B and 3C. It can also be set as the wafer processing tape 21 in which the adhesive layer 3 is further laminated on the uppermost pressure-sensitive adhesive layers 2a and 2b of the pressure-sensitive adhesive film 20 having the configuration.

  FIG. 6 is a cross-sectional view of a wafer processing tape 22 according to another embodiment of the present invention. In the embodiment shown in FIG. 6, in the wafer processing tape 22 shown in FIG. 2A, the areas having different thicknesses are replaced with the wafer fixing area 30 and the non-fixing area 31, and the central area 32 and the periphery. This is a wafer processing tape 22 made into an area 33. In addition, although the example which shows the change of the thickness similar to the tape 22 for wafer processing shown to Fig.2 (a) was given, the tape 22 for wafer processing shown to FIG.2 (b) and FIG.2 (c) A wafer processing tape 22 showing a similar change in thickness can also be obtained.

  FIG. 7 is a cross-sectional view of a wafer processing tape 22 according to another embodiment of the present invention. In the embodiment shown in FIG. 7, in the wafer processing tape 22 shown in FIG. 3A, the area where the pressure-sensitive adhesive layer has a different hardness is replaced with a wafer fixing area 30 and a non-fixing area 31. The wafer processing tape 22 is made into a region 32 and a peripheral region 33. In addition, although the example which shows the change of the hardness of the adhesive layer similar to the tape 22 for wafer processing shown to Fig.3 (a) was given, the wafer processing shown to FIG.3 (b) and FIG.3 (c) was given. It can also be set as the tape 22 for wafer processing which shows the change of the hardness of the adhesive layer similar to the tape 22 for a wafer.

  Further, a wafer processing tape 21 according to another embodiment of the present invention is formed on the uppermost adhesive layer 2a of the adhesive film 20 having the same configuration as the wafer processing tape 22 of the embodiment shown in FIG. Further, a wafer processing tape 21 on which an adhesive layer 3 is laminated.

  Moreover, the wafer processing tape 21 according to another embodiment of the present invention is formed on the uppermost pressure-sensitive adhesive layer 2a of the adhesive film 20 having the same configuration as the wafer processing tape 22 of the embodiment shown in FIG. Further, a wafer processing tape 21 on which an adhesive layer 3 is laminated.

  Next, the pressure-sensitive adhesive layer 2 (the pressure-sensitive adhesive layer 2a and the pressure-sensitive adhesive layer 2b) and the base film 1 (the base film 1a) constituting the pressure-sensitive adhesive film 20 (the pressure-sensitive adhesive film 20a) shown in FIGS. To do.

(Base film)
The material constituting the base film 1 can be used without particular limitation as long as it is a conventionally known material. However, as will be described later, in the present embodiment, the pressure-sensitive adhesive layer 2 has an energy curable property. Since a radiation curable material is used among these materials, a material having radiation transparency is used.

  For example, as the material, polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic Α-olefin homopolymer or copolymer such as acid methyl copolymer, ethylene-acrylic acid copolymer, ionomer or a mixture thereof, polyurethane, styrene-ethylene-butene or pentene copolymer, polyamide-polyol Listed are thermoplastic elastomers such as copolymers, and mixtures thereof. Moreover, the base film 1 may be a mixture of two or more materials selected from these groups, or may be a single layer or a multilayer. The thickness of the base film 1 is not particularly limited and may be appropriately set, but is preferably 50 to 200 μm.

(Adhesive layer)
The pressure-sensitive adhesive layer 2 can be produced by applying a pressure-sensitive adhesive on the base film 1. The pressure-sensitive adhesive layer 2 is not particularly limited. For example, in the case of the wafer processing tape 21 shown in FIG. 1 (b), the adhesive layer 3 does not peel off at the time of expansion, and the pickup layer In this case, since it peels between the pressure-sensitive adhesive layer 2 and the adhesive layer 3, any material having ease of peeling from the adhesive layer 3 may be used. In order to improve the pick-up property, the pressure-sensitive adhesive layer 2 is preferably a radiation curable material, and is preferably a material that can be easily separated from the adhesive layer 3 after the radiation curing.

  On the other hand, in the case of the wafer processing tape 22 shown in FIG. 1A that does not have the adhesive layer 3, the retainability to such an extent that the diced and separated semiconductor chip does not peel off during the expansion, and the pickup At this time, any material having ease of peeling from the semiconductor chip may be used. In order to improve the pickup property, the pressure-sensitive adhesive layer 2 is preferably a radiation curable material, and is preferably a material that can be easily separated from the semiconductor chip after the radiation curing.

  The pressure-sensitive adhesive layer 2 can also serve as the function of the adhesive layer 3 for bonding and fixing a diced and separated semiconductor chip. That is, after the diced semiconductor chip and the pressure-sensitive adhesive layer 2 are picked up integrally, the pressure-sensitive adhesive layer 2 is heated to function as an adhesive for fixing the semiconductor chip in a predetermined position. it can.

  For example, the main component is an acrylic copolymer having at least a radiation-curable carbon-carbon double bond-containing group, a hydroxyl group and a carboxyl group-containing group, and the gel fraction is 60% or more. It is preferable that Furthermore, at least one selected from a compound (A) having a radiation curable carbon-carbon double bond having an iodine value of 0.5 to 20 in the molecule, a polyisocyanate, a melamine / formaldehyde resin, and an epoxy resin. It is preferable to contain a polymer obtained by addition reaction of the compound (B).

  The compound (A) that is one of the main components of the pressure-sensitive adhesive layer 2 will be described. A preferable introduction amount of the radiation curable carbon-carbon double bond of the compound (A) is 0.5 to 20, more preferably 0.8 to 10 in terms of iodine value. If the iodine value is 0.5 or more, an effect of reducing the adhesive strength after irradiation can be obtained. If the iodine value is 20 or less, the fluidity of the adhesive after irradiation is sufficient and after stretching. Therefore, the problem that the image recognition of each element becomes difficult at the time of pick-up can be suppressed. Furthermore, the compound (A) itself is stable and easy to manufacture.

  The compound (A) preferably has a glass transition point (hereinafter referred to as Tg) of −70 ° C. to 0 ° C., more preferably −66 ° C. to −28 ° C. If Tg is −70 ° C. or higher, the heat resistance against heat associated with radiation irradiation is sufficient, and if it is 0 ° C. or lower, the effect of preventing scattering of elements after dicing in a semiconductor wafer having a rough surface state is sufficiently obtained.

  The compound (A) may be produced by any method, and has, for example, a radiation curable carbon-carbon double bond such as an acrylic copolymer or a methacrylic copolymer, and a functional group. A compound obtained by reacting a compound having the functional group ((1)) with a compound having a functional group capable of reacting with the functional group ((2)) is used.

  Among these, the compound ((1)) having the radiation curable carbon-carbon double bond and the functional group is a single compound having a radiation curable carbon-carbon double bond such as an acrylic acid alkyl ester or a methacrylic acid alkyl ester. It can be obtained by copolymerizing a monomer ((1) -1) and a monomer ((1) -2) having a functional group. About the amount of adhesive double bonds, the amount of carbon-carbon double bonds contained in about 10 g of the heat-dried adhesive can be quantitatively measured by a weight increase method by bromine addition reaction in a dark place in vacuum.

  As a monomer ((1) -1), C6-C12 hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, or a single quantity of 5 or less carbon atoms The pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, or methacrylates similar to these can be listed.

  As the monomer ((1) -1) is used, the glass transition point becomes lower as the monomer having a larger carbon number is used, so that the desired Tg can be produced. In addition to Tg, it is also possible to blend a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene, acrylonitrile for the purpose of improving compatibility and various performances of the monomer ((1) -1). It is possible within the range of 5% by mass or less of the total mass.

  Examples of the functional group of the monomer ((1) -2) include a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group. The monomer ((1)- Specific examples of 2) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates. N-methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, Phthalic anhydride, glycidyl acrylic And glycidyl methacrylate, allyl glycidyl ether, and those obtained by urethanizing a part of the isocyanate group of a polyisocyanate compound with a monomer having a hydroxyl group or a carboxyl group and a radiation curable carbon-carbon double bond. it can.

  In the compound (2), as the functional group used, when the functional group of the compound (1), that is, the monomer ((1) -2) is a carboxyl group or a cyclic acid anhydride group, a hydroxyl group, Examples include an epoxy group and an isocyanate group. In the case of a hydroxyl group, examples include a cyclic acid anhydride group and an isocyanate group. In the case of an amino group, examples include an epoxy group and an isocyanate group. In the case of an epoxy group, a carboxyl group, a cyclic acid anhydride group, an amino group and the like can be mentioned. Specific examples include those listed in the specific examples of the monomer ((1) -2) Can be listed.

  By leaving an unreacted functional group in the reaction between the compound (1) and the compound (2), it is possible to produce those specified in the present invention with respect to characteristics such as acid value or hydroxyl value.

  In the synthesis of the above compound (A), as the organic solvent when the reaction is carried out by solution polymerization, ketone, ester, alcohol, and aromatic solvents can be used, among which toluene, ethyl acetate , Isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, etc., are generally good solvents for acrylic polymers and preferably have a boiling point of 60-120 ° C. The polymerization initiator is α, α′-azobisisobutyl. A radical generator such as an azobis type such as nitrile or an organic peroxide type such as benzoyl peroxide is usually used. At this time, a catalyst and a polymerization inhibitor can be used together as necessary, and the compound (A) having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time. In terms of adjusting the molecular weight, it is preferable to use a mercaptan or carbon tetrachloride solvent. This reaction is not limited to solution polymerization, and other methods such as bulk polymerization and suspension polymerization may be used.

  Although the compound (A) can be obtained as described above, the weight average molecular weight of the compound (A) is preferably about 300,000 to 1,000,000. If it is less than 300,000, the cohesive force due to radiation irradiation becomes small, and when the semiconductor wafer is diced, chip displacement tends to occur, and image recognition may be difficult. In order to prevent this chip displacement as much as possible, the weight average molecular weight is preferably 400,000 or more. Moreover, when a weight average molecular weight exceeds 1 million, there exists a possibility of gelatinizing at the time of a synthesis | combination and a coating. In addition, the weight average molecular weight in this invention is a weight average molecular weight of polystyrene conversion.

  In addition, it is preferable that the compound (A) has an OH group having a hydroxyl value of 5 to 100 because the risk of pick-up mistakes can be further reduced by reducing the adhesive strength after radiation irradiation. Moreover, it is preferable that a compound (A) has a COOH group used as the acid value of 0.5-30.

  Here, if the hydroxyl value of the compound (A) is too low, the effect of reducing the adhesive strength after irradiation is not sufficient, and if it is too high, the fluidity of the adhesive after irradiation tends to be impaired. If the acid value is too low, the effect of improving the tape restoring property is not sufficient, and if it is too high, the fluidity of the pressure-sensitive adhesive tends to be impaired.

  Next, the compound (B) which is another main component of the pressure-sensitive adhesive layer 2 will be described. The compound (B) is a compound selected from polyisocyanates, melamine / formaldehyde resins, and epoxy resins, and can be used alone or in combination of two or more. This compound (B) acts as a cross-linking agent, and the cohesive force of the pressure-sensitive adhesive mainly composed of the compounds (A) and (B) is reduced by the cross-linked structure formed as a result of reacting with the compound (A) or the base film 1. It can be improved after applying the agent.

  The polyisocyanates are not particularly limited, and examples thereof include 4,4′-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4′-diphenyl ether diisocyanate, 4,4 ′-[2,2-bis (4 -Phenoxyphenyl) propane] aromatic isocyanate such as diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate Lysine diisocyanate, lysine triisocyanate and the like. Specifically, Coronate L (made by Nippon Polyurethane Co., Ltd., trade name) or the like can be used.

  Specific examples of the melamine / formaldehyde resin include Nicalac MX-45 (trade name, manufactured by Sanwa Chemical Co., Ltd.), Melan (trade name, manufactured by Hitachi Chemical Co., Ltd.), and the like. Furthermore, as an epoxy resin, TETRAD-X (Mitsubishi Chemical Corporation make, brand name) etc. can be used.

  The addition amount of (B) needs to be selected so as to be a ratio of 0.1 to 10 parts by mass, preferably 0.4 to 3 parts by mass with respect to 100 parts by mass of the compound (A). By selecting within this range, it is possible to obtain an appropriate cohesive force, and the crosslinking reaction does not proceed abruptly, so that workability such as blending and application of the adhesive is improved.

  The pressure-sensitive adhesive layer 2 preferably contains a photopolymerization initiator (C). There is no restriction | limiting in particular in the photoinitiator (C) contained in the adhesive layer 2, A conventionally well-known thing can be used. For example, benzophenones such as benzophenone, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone and 4,4′-dichlorobenzophenone, acetophenones such as acetophenone and diethoxyacetophenone, 2-ethylanthraquinone, t- Examples include anthraquinones such as butylanthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triarylimidazole dimer (lophine dimer), acridine compounds, and the like. These can be used alone or in combination of two or more. As addition amount of (C), it is preferable to set it as 0.1-10 mass parts with respect to 100 mass parts of compounds (A), and it is more preferable to set it as 0.5-5 mass parts.

  Furthermore, a tackifier, a tackifier, a surfactant, or other modifiers can be blended with the radiation curable pressure-sensitive adhesive as necessary. Moreover, you may add an inorganic compound filler suitably. The thickness of the pressure-sensitive adhesive layer 2 is preferably at least 5 μm, more preferably 10 μm or more. The pressure-sensitive adhesive layer 2 may have a configuration in which a plurality of layers are laminated.

  Next, the adhesive layer 3 constituting the wafer processing tape 21 shown in FIGS. 1B, 4 and 5 will be described.

(Adhesive layer)
When the chip is picked up after the semiconductor wafer is bonded and divided, the adhesive layer 3 is peeled off from the adhesive layer 2 and attached to the chip when the chip is picked up. It functions as a bonding film for fixing to a lead frame.

  Although it does not specifically limit as the adhesive bond layer 3, The film adhesive generally used as an adhesive film can be used conveniently, a polyimide adhesive, an acrylic adhesive, An epoxy resin / phenolic resin / acrylic resin / inorganic filler blend adhesive is preferred. The thickness may be appropriately set, but is preferably about 5 to 100 μm.

  The wafer processing tape 21 can be formed by laminating an adhesive film as the adhesive layer 3 that has been cut into a circular shape in advance on the pressure-sensitive adhesive layer 2 at room temperature or by heating and applying pressure.

  Further, the wafer processing tape 21 includes a form cut for each semiconductor wafer and a form obtained by winding a plurality of long films formed in a roll shape.

(Semiconductor chip manufacturing method)
Next, a method of manufacturing a semiconductor chip with an adhesive layer using the wafer processing tape 21 according to the eighth embodiment of the present invention shown in FIG. 4B will be described with reference to FIG. . Here, description will be made using a cutting method using a laser different from the cutting device used in FIG.

  FIG. 8 is a view for explaining a state of the wafer processing tape to which the semiconductor wafer 11 is bonded before and after in the expanding process, and FIG. 8A is a wafer processing tape 21 to which the semiconductor wafer 11 is bonded. FIG. 4 is a cross-sectional view showing a state where the device is mounted on an expanding device. FIG. 8B is a cross-sectional view showing the wafer processing tape 21 and the semiconductor wafer 11 after expansion.

  First, a laser beam is irradiated to the part of the semiconductor wafer 11 that is to be divided to form a modified region by multiphoton absorption inside the semiconductor wafer 11 (not shown). Next, as shown in FIG. 8 (a), the semiconductor wafer 11 and the adhesive layer 3 of the wafer processing tape 21 are bonded together while heating at 60 to 70 ° C., and the outer peripheral portion of the uppermost adhesive layer 2a is bonded. The ring frame 12 is affixed, and the lower surface of the lowest base film 1a is placed on the stage 15 of the expanding apparatus. In the figure, reference numeral 14 denotes a hollow cylindrical push-up member of the expanding device. Prior to the step of irradiating the semiconductor wafer 11 with laser light, a bonding step with the wafer processing tape 21 may be performed.

  Next, as shown in FIG. 8B, in the state where the ring frame 12 is fixed, the push-up member 14 of the expanding device is raised, and the wafer processing tape 21 is expanded. The wafer fixing area 30 of the wafer processing tape 21 is included in the area surrounded by the contact portion of the push-up member 14. In the figure, reference numeral 16 denotes a movement amount (expansion amount) when the push-up member 14 is raised.

  As a result, the wafer processing tape 21 is stretched in the circumferential direction, and the semiconductor wafer 11 is divided in units of chips starting from the modified region, and the adhesive layer 3 is also divided.

  Thereafter, the adhesive layer 2a is subjected to a radiation curing process or a thermosetting process and the semiconductor chip 17 is picked up, whereby a semiconductor chip with an adhesive layer can be obtained.

  In the method of manufacturing a semiconductor chip with an adhesive layer as described above, the wafer fixing region 30 of the wafer processing tape 21 including the region to which the semiconductor wafer 11 is bonded is pushed up in the wafer processing tape 21 when expanded. The wafer fixing region 30 is preferentially extended over the non-fixing region 31 so as to be included in the region surrounded by the contact portion with the member 14. As a result, the force for expanding the wafer processing tape 21 is preferentially transmitted to the wafer fixing region 30, and the wafer fixing region 30 can be satisfactorily stretched.

  Also in the method of manufacturing a semiconductor chip with an adhesive layer as shown in FIGS. 9A, 9B, and 9C, the wafer processing includes a region where the semiconductor wafer is bonded when expanded. The wafer fixing region 30 is preferentially over the non-fixing region 31 so that the wafer fixing region 30 of the tape 21 is included in the region surrounded by the contact portion with the push-up member 98 in the wafer processing tape 21. To stretch.

  From the above, the distance between the separated semiconductor chips can be uniformly and sufficiently widened, and the chip recognition failure by a CCD camera or the like is reduced, and adjacent chips contact each other when picking up the chips. It is possible to reduce damage to the chip due to this.

  Next, examples of the present invention will be described, but the present invention is not limited to these examples.

The used base film, pressure-sensitive adhesive layer composition, and adhesive layer composition are shown below.
Base film 1A: Polyolefin A (thickness 100 μm)
Adhesive layer composition 2A: Acrylic A adhesive composition (thickness 10 μm)
Adhesive layer composition 2B: acrylic B adhesive composition (thickness 20 μm)
Adhesive layer composition 3A: Epoxy-acrylic A adhesive composition (thickness 20 μm)

(Example 1)
The pressure-sensitive adhesive layer composition 2A dissolved in an organic solvent was applied to the base film 1A so that the dry film thickness was 10 μm, and a pressure-sensitive adhesive film was dried at 110 ° C. for 3 minutes. A separately prepared adhesive film was bonded to the front or back surface of the non-fixing region of the prepared adhesive film, and the adhesive film was prepared so as to be doubled in the non-fixing region (FIG. 2 (a) and (B), see FIGS. 4 (a) and (b)). In addition, when bonding two adhesive films, the adhesive layer of one adhesive film and the base film of the other adhesive film are bonded together.

  Separately, an adhesive layer composition 3A dissolved in an organic solvent is applied onto a release-treated polyethylene terephthalate (PET) film, dried by heating at 110 ° C. for 1 minute, and applied in a B-stage state with a film thickness of 20 μm. A film was formed to produce an adhesive film. The pressure-sensitive adhesive film and the adhesive film were cut into circles having a diameter of 370 mm and 320 mm, respectively, and the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film and the adhesive layer of the adhesive film were bonded together. Finally, the PET film of the adhesive film was peeled from the adhesive layer, and the wafer processing tape of Example 1 (see FIGS. 4A and 4B) was obtained.

(Example 2)
The pressure-sensitive adhesive layer composition 2A dissolved in an organic solvent was applied to the base film 1A so that the dry film thickness was 10 μm, and a pressure-sensitive adhesive film was dried at 110 ° C. for 3 minutes. The pressure-sensitive adhesive layer composition 2B was further gravure coated on the surface or back surface of the non-fixing region of the produced pressure-sensitive adhesive film so that the dry film thickness was 20 μm, thereby producing a pressure-sensitive adhesive film (FIG. 3A). And (b), see FIGS. 5 (a) and (b)).

  Separately, an adhesive layer composition 3A dissolved in an organic solvent is applied onto a release-treated polyethylene terephthalate (PET) film, dried by heating at 110 ° C. for 1 minute, and applied in a B-stage state with a film thickness of 20 μm. A film was formed to produce an adhesive film. The pressure-sensitive adhesive film and the adhesive film were cut into circles having a diameter of 370 mm and 320 mm, respectively, and the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film and the adhesive layer of the adhesive film were bonded together. Finally, the PET film of the adhesive film was peeled from the adhesive layer to obtain a wafer processing tape of Example 2 (see FIGS. 5A and 5B).

(Comparative Example 1)
The pressure-sensitive adhesive layer composition 2A dissolved in an organic solvent was applied to the base film 1A so that the dry film thickness was 10 μm, and a pressure-sensitive adhesive film was dried at 110 ° C. for 3 minutes. Separately, an adhesive layer composition 3A dissolved in an organic solvent is applied onto a release-treated polyethylene terephthalate (PET) film, dried by heating at 110 ° C. for 1 minute, and applied in a B-stage state with a film thickness of 20 μm. A film was formed to produce an adhesive film. The pressure-sensitive adhesive film and the adhesive film were cut into circles having a diameter of 370 mm and 320 mm, respectively, and the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film and the adhesive layer of the adhesive film were bonded together. Finally, the PET film of the adhesive film was peeled from the adhesive layer, and the wafer processing tape of Comparative Example 1 was obtained.

(Comparative Example 2)
The pressure-sensitive adhesive layer composition 2A dissolved in an organic solvent was applied to the base film 1A so that the dry film thickness was 10 μm, and a pressure-sensitive adhesive film was dried at 110 ° C. for 3 minutes. Similarly, a separately prepared adhesive film was bonded to the front or back surface of the wafer fixing region of the prepared adhesive film, and the adhesive film was prepared so that the adhesive film was doubled in the wafer fixing region. In addition, when bonding two adhesive films, the adhesive layer of one adhesive film and the base film of the other adhesive film are bonded together.

  Separately, an adhesive layer composition 3A dissolved in an organic solvent is applied onto a release-treated polyethylene terephthalate (PET) film, dried by heating at 110 ° C. for 1 minute, and applied in a B-stage state with a film thickness of 20 μm. A film was formed to produce an adhesive film. The pressure-sensitive adhesive film and the adhesive film were cut into circles having a diameter of 370 mm and 320 mm, respectively, and the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film and the adhesive layer of the adhesive film were bonded together. Finally, the PET film of the adhesive film was peeled from the adhesive layer, and the wafer processing tape of Comparative Example 2 was obtained.

(Comparative Example 3)
The pressure-sensitive adhesive layer composition 2A dissolved in an organic solvent was applied to the base film 1A so that the dry film thickness was 10 μm, and a pressure-sensitive adhesive film was dried at 110 ° C. for 3 minutes. The pressure-sensitive adhesive layer composition 2B was further gravure-coated on the front or back surface of the wafer fixing region of the prepared pressure-sensitive adhesive film so that the dry film thickness was 20 μm, thereby preparing a pressure-sensitive adhesive film.

  Separately, an adhesive layer composition 3A dissolved in an organic solvent is applied onto a release-treated polyethylene terephthalate (PET) film, dried by heating at 110 ° C. for 1 minute, and applied in a B-stage state with a film thickness of 20 μm. A film was formed to produce an adhesive film. The pressure-sensitive adhesive film and the adhesive film were cut into circles having a diameter of 370 mm and 320 mm, respectively, and the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film and the adhesive layer of the adhesive film were bonded together. Finally, the PET film of the adhesive film was peeled from the adhesive layer, and the wafer processing tape of Comparative Example 3 was obtained.

(Separability test of adhesive layer)
A semiconductor wafer (thickness 50 μm, diameter 300 mm) was irradiated with laser light, and a modified region by multiphoton absorption was formed in a portion to be divided inside the wafer. The wafer processing tapes of Examples 1 and 2 and Comparative Examples 1, 2 and 3 were laminated to the semiconductor wafer after laser irradiation and the ring frame made of stainless steel. Next, a resin expanding ring having an inner diameter of 330 mm was attached to the outer periphery of the wafer processing tape, the expanding ring was fixed by an expanding device, and the wafer processing tape was expanded under the following expanding conditions. When the expanding ring is fixed by the expanding device, the wafer fixing region of the wafer processing tape is included in the region surrounded by the contact portion with the push-up member of the expanding device in the wafer processing tape.

Expanding speed: 100mm / sec
Expanding amount: 15mm
Thereafter, the wafer processing tape was irradiated with ultraviolet rays, the pressure-sensitive adhesive layer was cured, and the adhesive strength was reduced.

(Evaluation method for adhesive layer splitting)
After the expansion, it was observed with an optical microscope whether or not the adhesive layer was divided together with the semiconductor wafer. The observation results are shown in Table 1. The success rate of the adhesive layer splitting shown in Table 1 is the percentage of the adhesive layer that was successfully split with respect to the total number of chips. The total number of chips after laser processing is about 400, and the chip size is 10 mm × 10 mm.

表１に示したように、ウエハ固定用領域のモジュラス値（Ａ）と非固定用領域のモジュラス値（Ｂ）が、 Ａ ＞ Ｂ であるように構成された比較例２及び比較例３では、接着剤層の分断の成功率が２０％となり、良好な接着剤層の分断性を得ることができなかった。また、ウエハ固定用領域のモジュラス値（Ａ）と非固定用領域のモジュラス値（Ｂ）が、 Ａ ＝ Ｂ であるように構成された比較例１では、接着剤層の分断の成功率が７０％となり、良好な接着剤層の分断性を得ることができなかった。

As shown in Table 1, in Comparative Example 2 and Comparative Example 3 configured such that the modulus value (A) of the wafer fixing region and the modulus value (B) of the non-fixing region are A> B, The success rate of splitting the adhesive layer was 20%, and good splitting properties of the adhesive layer could not be obtained. Further, in Comparative Example 1 in which the modulus value (A) of the wafer fixing region and the modulus value (B) of the non-fixing region are A = B, the success rate of the adhesive layer division is 70. %, And good splitting properties of the adhesive layer could not be obtained.

  On the other hand, in Example 1 and Example 2 in which the modulus value (A) of the wafer fixing region and the modulus value (B) of the non-fixing region are A <B, the adhesive layer The success rate of splitting was 100%, and good splitting properties of the adhesive layer could be obtained. This is because the force when expanding the wafer processing tape is preferentially transmitted to the wafer fixing area, and the wafer fixing area can be satisfactorily stretched.

  Therefore, according to the wafer processing tape according to the present embodiment, it is possible to improve the severability of the wafer and the adhesive layer, and as a result, it is possible to suppress the pickup failure of the semiconductor chip.

DESCRIPTION OF SYMBOLS 1, 1a: Base film 2, 2a, 2b: Adhesive layer 3: Adhesive layer 11: Semiconductor wafer 12: Ring frame 14: Push-up member 15: Stages 20, 20a, 20b: Adhesive films 21, 22: Wafer processing Tape 30: Wafer fixing area 31: Non-fixing area 32: Central area 33: Peripheral area

Claims (11)

A wafer processing tape having a base film and an adhesive layer provided on the base film,
In the modulus value of the laminate formed by the base film and the pressure-sensitive adhesive layer,
The modulus value (A) of the wafer fixing area where the semiconductor wafer of the wafer processing tape is bonded, and the modulus value (B) of the non-fixing area excluding the wafer fixing area of the wafer processing tape,
A <B
Wafer processing tape characterized by satisfying the above relationship.   2. The wafer processing tape according to claim 1, wherein the modulus value (A) of the wafer fixing region and the modulus value (B) of the non-fixing region are measured values of 5% modulus.   3. The wafer processing tape according to claim 1, wherein a thickness of the laminated body is thinner in the wafer fixing region than in the non-fixing region. 4.   4. The wafer processing tape according to claim 1, wherein the pressure-sensitive adhesive layer in the non-fixing region is harder than the pressure-sensitive adhesive layer in the wafer fixing region. Since the material of the base film in the wafer fixing region and the material of the base film in the non-fixing region are different, the modulus value (A) of the wafer fixing region and the non-fixing region The modulus value (B) of
A <B
The wafer processing tape according to claim 1, wherein the wafer processing tape has a relationship of A wafer processing tape having a base film and an adhesive layer provided on the base film,
In the modulus value of the laminate formed by the base film and the pressure-sensitive adhesive layer,
The modulus value (C) of at least the central region of the wafer fixing region to which the semiconductor wafer of the wafer processing tape is bonded, and the modulus value (D) of the peripheral region of the central region are:
C <D
Wafer processing tape characterized by satisfying the above relationship.   7. The wafer processing tape according to claim 6, wherein the modulus value (C) of the central region and the modulus value (D) of the peripheral region are measured values of 5% modulus.   The wafer processing tape according to claim 6 or 7, wherein a thickness of the laminated body is thinner in the central region than in the peripheral region.   9. The wafer processing tape according to claim 6, wherein the pressure-sensitive adhesive layer in the peripheral region is harder than the pressure-sensitive adhesive layer in the central region. Since the material of the base film in the central region and the material of the base film in the peripheral region are different, the modulus value (C) of the central region and the modulus value (D) of the peripheral region are ,
C <D
The wafer processing tape according to claim 6, wherein the wafer processing tape has a relationship of The wafer processing tape according to claim 1, wherein an adhesive layer is provided on the pressure-sensitive adhesive layer.

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