JP2010027899A - 積層セラミック電子部品およびその製造方法 - Google Patents
積層セラミック電子部品およびその製造方法 Download PDFInfo
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- JP2010027899A JP2010027899A JP2008188398A JP2008188398A JP2010027899A JP 2010027899 A JP2010027899 A JP 2010027899A JP 2008188398 A JP2008188398 A JP 2008188398A JP 2008188398 A JP2008188398 A JP 2008188398A JP 2010027899 A JP2010027899 A JP 2010027899A
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- 239000000919 ceramic Substances 0.000 title claims description 77
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004020 conductor Substances 0.000 claims abstract description 149
- 238000007639 printing Methods 0.000 claims abstract description 31
- 238000010030 laminating Methods 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000003985 ceramic capacitor Substances 0.000 description 41
- 238000000034 method Methods 0.000 description 12
- 239000002184 metal Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 238000007747 plating Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
【解決手段】ビア導体37の中心が、内部導体32の開口部34の中心に対して、導電性ペースト38の印刷方向39での始端側から終端側に向かう方向にずれるように、内部導体32を印刷する。これによって、開口部34における、印刷方向39の開始側に印刷にじみ40が発生しても、内部導体32とビア導体37とが接触して、ショートするおそれを低減することができる。
【選択図】図5
Description
22 セラミック層
29 セラミック素体
30,31 外部端子電極
32,33 内部導体
34,35 開口部
36,37 ビア導体
38 導電性ペースト
39 印刷方向
40 印刷にじみ
Claims (4)
- 複数のセラミック層が積層されてなるセラミック素体と、
前記セラミック素体の内部において、前記セラミック層間の界面に沿って延びるように配置される内部導体と、
前記セラミック素体の内部において、前記セラミック層の積層方向に沿って延びるように配置されるビア導体と
を備え、
前記内部導体は、前記ビア導体を通過させる開口部を有し、当該開口部によって、前記内部導体と前記ビア導体とは互いに電気的に隔離され、
前記ビア導体の中心は、前記開口部の中心に対して、所定方向にずれて位置されている、積層セラミック電子部品。 - 前記内部導体は、互いに異なる前記セラミック層間の界面に沿ってそれぞれ配置される、少なくとも1組の第1および第2の内部導体を含み、
前記ビア導体は、前記第1の内部導体と電気的に接続されるが、前記開口部によって第2の前記内部導体から電気的に隔離される、第1のビア導体と、前記第2の内部導体と電気的に接続されるが、前記開口部によって第1の前記内部導体から電気的に隔離される、第2のビア導体とを含み、
前記セラミック素体の外表面上に形成され、特定の前記ビア導体と電気的に接続される外部端子電極をさらに備える、請求項1に記載の積層セラミック電子部品。 - 前記開口部は長径および短径を有する幾何学的形態を有し、前記開口部の中心に対して前記ビア導体の中心がずれる方向と前記長径の方向とが互いに平行である、請求項1または2に記載の積層セラミック電子部品。
- 複数のセラミックグリーンシートを用意する工程と、
特定の前記セラミックグリーンシート上に、開口部を有する内部導体を導電性ペーストの印刷によって形成する工程と、
特定の前記セラミックグリーンシートを厚み方向に貫通するように、前記内部導体パターンの前記開口部に対応する位置にビア導体を形成する工程と
を備え、
前記内部導体を形成する工程において、前記ビア導体の中心が、前記開口部の中心に対して、前記導電性ペーストの印刷方向での始端側から終端側に向かう方向にずれて位置されるように、前記内部導体が形成される、積層セラミック電子部品の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008188398A JP4687757B2 (ja) | 2008-07-22 | 2008-07-22 | 積層セラミック電子部品の製造方法 |
US12/504,831 US8174815B2 (en) | 2008-07-22 | 2009-07-17 | Monolithic ceramic electronic component and method for manufacturing the same |
US13/437,971 US9236184B2 (en) | 2008-07-22 | 2012-04-03 | Monolithic ceramic electronic component and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008188398A JP4687757B2 (ja) | 2008-07-22 | 2008-07-22 | 積層セラミック電子部品の製造方法 |
Related Child Applications (1)
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JP2010161266A Division JP5007763B2 (ja) | 2010-07-16 | 2010-07-16 | 積層セラミックコンデンサ |
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JP2010027899A true JP2010027899A (ja) | 2010-02-04 |
JP4687757B2 JP4687757B2 (ja) | 2011-05-25 |
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ID=41568448
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JP2008188398A Active JP4687757B2 (ja) | 2008-07-22 | 2008-07-22 | 積層セラミック電子部品の製造方法 |
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US (2) | US8174815B2 (ja) |
JP (1) | JP4687757B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012028502A (ja) * | 2010-07-22 | 2012-02-09 | Ngk Spark Plug Co Ltd | 積層コンデンサ、及び配線基板 |
JP2014143290A (ja) * | 2013-01-24 | 2014-08-07 | Murata Mfg Co Ltd | セラミック積層部品 |
JP2021158294A (ja) * | 2020-03-30 | 2021-10-07 | ブラザー工業株式会社 | 圧電アクチュエータ、及び、その製造方法 |
WO2023032774A1 (ja) * | 2021-08-31 | 2023-03-09 | 株式会社村田製作所 | 複合電子部品 |
JP7533162B2 (ja) | 2020-11-27 | 2024-08-14 | ブラザー工業株式会社 | 圧電アクチュエータ、及び、圧電アクチュエータと流路ユニットとを備えた液体吐出ヘッドの製造方法 |
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KR101696887B1 (ko) * | 2010-07-29 | 2017-01-17 | 삼성전자주식회사 | 무선 통신 장치를 위한 유에스비 연결장치 |
DE102013104621A1 (de) * | 2013-05-06 | 2014-11-06 | Epcos Ag | Elektronisches Bauelement und Verfahren zu dessen Passivierung |
KR102449358B1 (ko) * | 2017-08-31 | 2022-09-30 | 삼성전기주식회사 | 커패시터 부품 |
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JP2012028502A (ja) * | 2010-07-22 | 2012-02-09 | Ngk Spark Plug Co Ltd | 積層コンデンサ、及び配線基板 |
JP2014143290A (ja) * | 2013-01-24 | 2014-08-07 | Murata Mfg Co Ltd | セラミック積層部品 |
US9236845B2 (en) | 2013-01-24 | 2016-01-12 | Murata Manufacturing Co., Ltd. | Ceramic multilayer component |
JP2021158294A (ja) * | 2020-03-30 | 2021-10-07 | ブラザー工業株式会社 | 圧電アクチュエータ、及び、その製造方法 |
US12052923B2 (en) | 2020-03-30 | 2024-07-30 | Brother Kogyo Kabushiki Kaisha | Piezoelectric actuator and method of manufacturing piezoelectric actuator |
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Also Published As
Publication number | Publication date |
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US20130091701A1 (en) | 2013-04-18 |
JP4687757B2 (ja) | 2011-05-25 |
US8174815B2 (en) | 2012-05-08 |
US20100020465A1 (en) | 2010-01-28 |
US9236184B2 (en) | 2016-01-12 |
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