JP2007123285A - 有機電界発光膜蒸着用蒸着源 - Google Patents
有機電界発光膜蒸着用蒸着源 Download PDFInfo
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- JP2007123285A JP2007123285A JP2006343506A JP2006343506A JP2007123285A JP 2007123285 A JP2007123285 A JP 2007123285A JP 2006343506 A JP2006343506 A JP 2006343506A JP 2006343506 A JP2006343506 A JP 2006343506A JP 2007123285 A JP2007123285 A JP 2007123285A
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- vapor deposition
- vapor
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 261
- 238000000151 deposition Methods 0.000 title description 53
- 239000000463 material Substances 0.000 claims abstract description 161
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 230000008021 deposition Effects 0.000 claims description 65
- 150000004767 nitrides Chemical class 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 35
- 230000008859 change Effects 0.000 description 20
- 238000001514 detection method Methods 0.000 description 16
- 238000005019 vapor deposition process Methods 0.000 description 16
- 230000008016 vaporization Effects 0.000 description 12
- 238000009834 vaporization Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000010419 fine particle Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- -1 aluminum (Al) Chemical class 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】供給される電力によって加熱され、内部に収容された蒸着材料20に熱を伝達し、内部で生成された蒸着材料20の蒸気を噴射させて基板表面に蒸着膜を形成する有機電界発光膜蒸着用蒸着源400であって、蒸気放出開口401Aが形成された上部プレート401、側壁402、及び底部材を含み、さらに前記蒸気放出開口401Aは、蒸着膜が蒸着される基板の幅bと同一か、またはその基板の幅より長い長さLを有している。
【選択図】図7
Description
蒸気放出開口が形成された上部プレート、側壁、及び底部材を含み、さらに前記蒸気放出開口は、蒸着膜が蒸着される基板の幅と同一か、またはその基板の幅より長い長さを有していることを特徴とする。
<第1の実施形態>
図3aは、本発明の第1の実施形態における蒸着源の断面図である。本実施形態における蒸着源100は、上部プレート101、側壁102、及び底部材103からなる容器であり、その内部には、有機電界発光素子の固体蒸着材料(以下、“蒸着材料”と称する)20が収容されている。上部プレート101には、気化された蒸着材料の蒸気を蒸着源100から放出するための蒸気放出開口101A(以下、便宜上“開口”と称する)が形成され、上部プレート101の下面に固定された遮蔽板104は、開口101Aに対応する。
図4は、本発明の第2の実施形態における蒸着源の断面図である。本実施形態における蒸着源200の全体的な構成は、図3a及び図3cに図示された蒸着源100の構成と同一である。また、蒸着源200の上部プレート201を蒸着材料20に熱を供給するための加熱手段(ヒーター)として作用させることも、またはその上部(または下部)に別体の加熱手段を設けることもできる。以下の説明では、上部プレート201が加熱手段として作用する場合を例に挙げて説明する。
図5は、本発明の第3の実施形態における蒸着源の断面図であり、本実施形態における蒸着源300も、やはり加熱手段として作用する上部プレート301、側壁302、及び底部材303からなる。開口301Aが形成され、遮蔽板304が固定された上部プレート301の構成は、前述した第1及び第2の実施形態における蒸着源100及び200の上部プレート101及び201と同一であるため、その説明は省略する。
図7は、本発明の第4の実施形態における蒸着源と基板との関係を概略的に図示した斜視図であり、便宜上、蒸着源400の内部構成は図示しない。
12 基板
13 チャンバー
14 熱絶縁構造体
20 蒸着材料
11A、101,201,301,401 上部プレート
11D、102,202,302 側壁
11E,103,203,303 底部材
101A,201A,301A,401A 蒸気放出開口
101−1 突起部
102−1,303A 溝
104,204,304 遮蔽板
C1、C2、・・・Cn コイル
Claims (6)
- 供給される電力によって加熱され、内部に収容された蒸着材料に熱を伝達し、内部で生成された蒸着材料の蒸気を噴射させて基板表面に蒸着膜を形成する有機電界発光膜蒸着用蒸着源において、
蒸気放出開口が形成された上部プレート、側壁、及び底部材を含み、さらに前記蒸気放出開口は、蒸着膜が蒸着される基板の幅と同一か、またはその基板の幅より長い長さを有していることを特徴とする有機電界発光膜蒸着用蒸着源。 - 前記蒸着源は固定された基板に対して水平移動自在に設けられている請求項1に記載の有機電界発光膜蒸着用蒸着源。
- 前記基板は固定された前記蒸着源に対して水平移動自在に設けられている請求項1に記載の有機電界発光膜蒸着用蒸着源。
- 前記蒸着源は上側部分と下側部分とを有し、前記上側部分の断面積が前記下側部分の断面積よりも小さいことを特徴とする請求項1に記載の有機電界発光膜蒸着用蒸着源。
- 前記蒸着源は、前記蒸着材料である有機物質よりも熱容量が大きな材料で形成されている請求項1に記載の有機電界発光膜蒸着用蒸着源。
- 前記蒸着源は、アルミニウム(Al)、ジルコニウム(Zr)、シリコン(Si)またはイットリウム(Y)の酸化物または窒化物のいずれか一つ、または二つ以上の複合材料で形成されている請求項1または請求項5に記載の有機電界発光膜蒸着用蒸着源。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0042271A KR100471358B1 (ko) | 2002-07-19 | 2002-07-19 | 유기 전자 발광층의 증착 장치 |
KR10-2002-0058116A KR100471361B1 (ko) | 2002-09-25 | 2002-09-25 | 유기 전계 발광 소자 증착 장치 |
KR1020020059786A KR100669194B1 (ko) | 2002-10-01 | 2002-10-01 | 유기 전계 발광 소자 증발원 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003277602A Division JP3924751B2 (ja) | 2002-07-19 | 2003-07-22 | 有機電界発光膜蒸着用蒸着源 |
Publications (1)
Publication Number | Publication Date |
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JP2007123285A true JP2007123285A (ja) | 2007-05-17 |
Family
ID=36571445
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003277602A Expired - Lifetime JP3924751B2 (ja) | 2002-07-19 | 2003-07-22 | 有機電界発光膜蒸着用蒸着源 |
JP2006343450A Expired - Lifetime JP4429305B2 (ja) | 2002-07-19 | 2006-12-20 | 有機電界発光膜蒸着用蒸着源 |
JP2006343506A Pending JP2007123285A (ja) | 2002-07-19 | 2006-12-20 | 有機電界発光膜蒸着用蒸着源 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003277602A Expired - Lifetime JP3924751B2 (ja) | 2002-07-19 | 2003-07-22 | 有機電界発光膜蒸着用蒸着源 |
JP2006343450A Expired - Lifetime JP4429305B2 (ja) | 2002-07-19 | 2006-12-20 | 有機電界発光膜蒸着用蒸着源 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7025832B2 (ja) |
EP (3) | EP1382713B1 (ja) |
JP (3) | JP3924751B2 (ja) |
CN (1) | CN1226448C (ja) |
AT (1) | ATE326555T1 (ja) |
DE (1) | DE60305246T2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101252756B1 (ko) * | 2011-08-08 | 2013-04-09 | 공주대학교 산학협력단 | 복수의 증발특성을 갖는 점증발원의 노즐 |
KR101433901B1 (ko) | 2012-10-25 | 2014-09-01 | 지제이엠 주식회사 | 유기물질의 증착장치 및 방법 |
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CN110344004A (zh) * | 2019-08-29 | 2019-10-18 | 上海天马有机发光显示技术有限公司 | 一种蒸镀坩埚和蒸镀设备 |
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KR101252756B1 (ko) * | 2011-08-08 | 2013-04-09 | 공주대학교 산학협력단 | 복수의 증발특성을 갖는 점증발원의 노즐 |
KR101433901B1 (ko) | 2012-10-25 | 2014-09-01 | 지제이엠 주식회사 | 유기물질의 증착장치 및 방법 |
Also Published As
Publication number | Publication date |
---|---|
EP1382713B1 (en) | 2006-05-17 |
US20060070576A1 (en) | 2006-04-06 |
EP1560467A1 (en) | 2005-08-03 |
JP3924751B2 (ja) | 2007-06-06 |
JP2007128898A (ja) | 2007-05-24 |
US20040016400A1 (en) | 2004-01-29 |
EP1560468B1 (en) | 2018-03-21 |
ATE326555T1 (de) | 2006-06-15 |
DE60305246T2 (de) | 2006-09-14 |
CN1487116A (zh) | 2004-04-07 |
EP1382713A3 (en) | 2004-06-02 |
CN1226448C (zh) | 2005-11-09 |
EP1560468A1 (en) | 2005-08-03 |
JP4429305B2 (ja) | 2010-03-10 |
EP1382713A2 (en) | 2004-01-21 |
US20060054089A1 (en) | 2006-03-16 |
US7815737B2 (en) | 2010-10-19 |
DE60305246D1 (de) | 2006-06-22 |
JP2004095542A (ja) | 2004-03-25 |
US7025832B2 (en) | 2006-04-11 |
EP1560467B1 (en) | 2014-02-26 |
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