JP2005191213A - 半導体チップパッケージ及びマルチチップパッケージ - Google Patents
半導体チップパッケージ及びマルチチップパッケージ Download PDFInfo
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- JP2005191213A JP2005191213A JP2003429531A JP2003429531A JP2005191213A JP 2005191213 A JP2005191213 A JP 2005191213A JP 2003429531 A JP2003429531 A JP 2003429531A JP 2003429531 A JP2003429531 A JP 2003429531A JP 2005191213 A JP2005191213 A JP 2005191213A
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- semiconductor chip
- main surface
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Abstract
【解決手段】半導体チップの主表面に設けられた各第1電極パッド16aと当該主表面の上方領域に形成された第1のボンディングパッド20a及び第1の中央ボンディングパッド18aとが、第1の再配線層24によってそれぞれ1対1の対応関係で電気的に接続されており、各第2電極パッド17bと当該主表面の上方領域に形成された第2のボンディングパッド22b及び第2の中央ボンディングパッド18bとが、第2の再配線層26によってそれぞれ1対1の対応関係で電気的に接続された半導体チップパッケージ100を複数個積層させてマルチチップパッケージとする。
【選択図】図1
Description
図1から図4を参照して、この発明の第1の実施の形態に係る半導体チップパッケージ及びマルチチップパッケージについて説明する。
図5から図8を参照して、この発明の第2の実施の形態に係る半導体チップパッケージ及びマルチチップパッケージについて説明する。
図9(A)及び(B)から図12を参照して、この発明の第3の実施の形態に係る半導体チップパッケージ及びマルチチップパッケージについて説明する。
12a:半導体チップの主表面
14a:第1の辺
14aa、14bb:半導体チップの側面(端面)
14b:第2の辺
16、70:第1の電極パッド群
16a、70a:第1の電極パッド
17、72:第2の電極パッド群
17b、72b:第2の電極パッド
18:中央ボンディングパッド群
18a:第1の中央ボンディングパッド
18b:第2の中央ボンディングパッド
20、31、74、84:第1のボンディングパッド群
20a、31a、74a、84a:第1のボンディングパッド
22、32、76、86:第2のボンディングパッド群
22b、32b、76b、86b:第2のボンディングパッド
24、34、80、88:第1の再配線層
26、36、82、90:第2の再配線層
30:絶縁膜
33:封止層
40:基板
40a:基板の搭載面
40b:基板の裏面
42:接着層
45:第3のボンディングパッド
47:第4のボンディングパッド
48:導電性コンタクト
49:外部端子
51、66、92:第1のボンディングワイヤ
52、68、94:第2のボンディングワイヤ
53:第3のボンディングワイヤ
54:第4のボンディングワイヤ
59、63:封止部
60:ダイパッド
60a:ダイパッドの主表面
60aa、60bb:ダイパッドの側面(端面)
60b:ダイパッドの裏面
62:リード部
100、250:半導体チップパッケージ
100a、300:第1の半導体チップパッケージ
100b、350:第2の半導体チップパッケージ
110:積層体
200:半導体チップ構造体
401a:対向領域
402a、403a:非対向領域
1000、2000、3000:マルチチップパッケージ
Claims (16)
- 方形状の主表面を有する半導体チップと、
該主表面に、該主表面を画成する第1の辺に沿って平行に設けられた複数の第1の電極パッドを含む第1の電極パッド群と、
前記主表面に、該主表面を画成するとともに前記第1の辺と対向する第2の辺に沿って平行に設けられた複数の第2の電極パッドを含む第2の電極パッド群と、
前記主表面のうちの前記第1及び第2の電極パッド群との間の領域であってかつ前記第1の電極パッド群寄りの位置に、該第1の電極パッド群と平行に設けられ、前記第1の電極パッドの各々に対応する複数の第1の中央ボンディングパッド、及び第2の電極パッドの各々に対応する複数の第2の中央ボンディングパッドを含む中央ボンディングパッド群と、
前記主表面のうちの前記第1の電極パッド群と前記第1の辺との間の領域に、該第1の辺と平行に該第1の電極パッドの各々に対応して設けられた、複数の第1のボンディングパッドを含む第1のボンディングパッド群と、
前記主表面のうちの前記第2の電極パッド群と前記第2の辺との間の領域に、該第2の辺と平行に該第2の電極パッドの各々に対応して設けられた、複数の第2のボンディングパッドを含む第2のボンディングパッド群と、
前記第1の電極パッドと、前記第1の中央ボンディングパッド及び前記第1のボンディングパッドとをそれぞれ1対1の対応関係で電気的に接続する第1の再配線層と、
前記第2の電極パッドと、前記第2の中央ボンディングパッド及び前記第2のボンディングパッドとをそれぞれ1対1の対応関係で電気的に接続する第2の再配線層と、
前記主表面上に、前記第1及び第2の中央ボンディングパッドの頂面と、第1及び第2のボンディングパッドの頂面とをそれぞれ露出させる厚みで形成された封止層と
を具えていることを特徴とする半導体チップパッケージ。 - 請求項1に記載の半導体チップパッケージにおいて、
前記第1の中央ボンディングパッドと、前記第2の中央ボンディングパッドとが、一直線上に交互に配置されていることを特徴とする半導体チップパッケージ。 - 方形状の主表面を有する半導体チップと、
該主表面に、該主表面を画成する第1の辺に沿って平行に設けられた、複数の第1の電極パッドを含む第1の電極パッド群と、
前記主表面に、該主表面を画成するとともに前記第1の辺と対向する第2の辺に沿って平行に設けられた複数の第2の電極パッドを含む第2の電極パッド群と、
前記主表面のうちの前記第1及び第2の電極パッド群との間の領域であってかつ前記第1の電極パッド群寄りの位置に、該第1の電極パッド群と平行に設けられ、前記第1の電極パッドの各々に対応する複数の第1の中央ボンディングパッド、及び第2の電極パッドの各々に対応する複数の第2の中央ボンディングパッドを含む中央ボンディングパッド群と、
前記主表面のうちの前記第1の電極パッド群と前記第1の辺との間の領域に、該第1の辺と平行に該第1の電極パッドの各々に対応して設けられた、複数の第1のボンディングパッドを含む第1のボンディングパッド群と、
前記主表面のうちの前記第2の電極パッド群と前記第2の辺との間の領域に、該第2の辺と平行に該第2の電極パッドの各々に対応して設けられた、複数の第2のボンディングパッドを含む第2のボンディングパッド群と、
前記第1の電極パッドと、前記第1の中央ボンディングパッド及び前記第1のボンディングパッドとをそれぞれ1対1の対応関係で電気的に接続する第1の再配線層と、
前記第2の電極パッドと、前記第2の中央ボンディングパッド及び前記第2のボンディングパッドとをそれぞれ1対1の対応関係で電気的に接続する第2の再配線層と、
前記主表面上に、前記第1及び第2の中央ボンディングパッドの頂面と、第1及び第2のボンディングパッドの頂面とをそれぞれ露出させる厚みで形成された封止層と
を具える半導体チップパッケージを複数具えており、
前記複数の半導体チップパッケージは、該半導体チップパッケージの厚み方向にずらして積層されていること特徴とするマルチチップパッケージ。 - 請求項3に記載のマルチチップパッケージにおいて、
前記複数の半導体チップパッケージは、各々の前記主表面は同一方向を向いているとともに各々の前記第1の辺を含む側面が同一方向を向いており、かつ前記半導体チップパッケージの各々は、前記第1の辺から前記第2の辺に向かう方向に、前記半導体チップパッケージが具える前記中央ボンディングパッド群が露出するように積層されていること特徴とするマルチチップパッケージ。 - 方形状の主表面を有する半導体チップと、
該主表面に、該主表面を画成する第1の辺に沿って平行に設けられた、複数の第1の電極パッドを含む第1の電極パッド群と、
前記主表面に、該主表面を画成するとともに前記第1の辺と対向する第2の辺に沿って平行に設けられた複数の第2の電極パッドを含む第2の電極パッド群と、
前記主表面のうちの前記第1及び第2の電極パッド群との間の領域であってかつ前記第1の電極パッド群寄りの位置に、該第1の電極パッド群と平行に設けられ、前記第1の電極パッドの各々に対応する複数の第1の中央ボンディングパッド、及び第2の電極パッドの各々に対応する複数の第2の中央ボンディングパッドを含む中央ボンディングパッド群と、
前記主表面のうちの前記第1の電極パッド群と前記第1の辺との間の領域に、該第1の辺と平行に該第1の電極パッドの各々に対応して設けられた、複数の第1のボンディングパッドを含む第1のボンディングパッド群と、
前記主表面のうちの前記第2の電極パッド群と前記第2の辺との間の領域に、該第2の辺と平行に該第2の電極パッドの各々に対応して設けられた、複数の第2のボンディングパッドを含む第2のボンディングパッド群と、
前記第1の電極パッドと、前記第1の中央ボンディングパッド及び前記第1のボンディングパッドとをそれぞれ1対1の対応関係で電気的に接続する第1の再配線層と、
前記第2の電極パッドと、前記第2の中央ボンディングパッド及び前記第2のボンディングパッドとをそれぞれ1対1の対応関係で電気的に接続する第2の再配線層と、
前記主表面上に、前記第1及び第2の中央ボンディングパッドの頂面と、第1及び第2のボンディングパッドの頂面とをそれぞれ露出させる厚みで形成された封止層と
を具える半導体チップパッケージを複数具えており、
複数の該半導体チップパッケージは、該半導体チップパッケージの厚み方向に積層されており、各々の前記主表面は同一方向を向いているとともに各々の前記第1の辺を含む側面が同一方向を向いており、かつ前記半導体チップパッケージの各々は、前記第1の辺から前記第2の辺に向かう方向に、前記半導体チップパッケージが具える前記中央ボンディングパッド群が露出するようにずらして積層されていることを特徴とするマルチチップパッケージ。 - 請求項3ないし5のいずれか一項に記載のマルチチップパッケージにおいて、
さらに、複数の前記半導体チップパッケージを該半導体チップパッケージの厚み方向に積層された積層体を搭載した基板を具え、該基板は、該積層体と対向する対向領域と、前記第1及び第2の辺と直交する方向において該対向領域を挟む位置に設けられた第1及び第2の非対向領域とを有し、該第1の非対向領域の表面には第3のボンディングパッドが形成されており、該第2の非対向領域の表面には第4のボンディングパッドが形成されており、
前記第3のボンディングパッドと、前記基板に接している前記半導体チップパッケージの第1のボンディングパッドとは、第1のボンディングワイヤによって電気的に接続されており、
積層された下側の前記半導体チップパッケージの第1の中央ボンディングパッドと、上側の前記半導体チップパッケージの第1のボンディングパッドとは、第2のボンディングワイヤによって電気的に接続されており、
前記基板から最も離れた半導体チップパッケージの第2の中央ボンディングパッドと、該最も離れた半導体チップパッケージに接する下側の前記半導体チップパッケージの第2の中央ボンディングパッドとは、第3のボンディングワイヤによって電気的に接続されており、
前記基板から最も離れた前記半導体チップパッケージの前記第2のボンディングパッドと、前記第4のボンディングパッドとは、第4のボンディングワイヤによって電気的に接続されていることを特徴とするマルチチップパッケージ。 - 方形状の第1主面と該主面を覆う封止層とを有する半導体チップパッケージと、方形状の第2主面を有しかつ該半導体チップチップパッケージの厚み方向にずらして積層されている半導体チップとを具え、該半導体チップ上には前記半導体チップまたは前記半導体チップパッケージが積層されていることを特徴とするマルチチップパッケージ。
- 請求項7に記載のマルチチップパッケージにおいて、
前記半導体チップパッケージの前記第1主面、及び前記半導体チップの前記第2主面の一部がそれぞれ露出するように積層されていることを特徴とするマルチチップパッケージ。 - 請求項7または8に記載のマルチチップパッケージにおいて、
前記半導体チップパッケージの第1主面、及び前記半導体チップの前記第2主面の同一の位置がそれぞれ露出するように積層されていることを特徴とするマルチチップパッケージ。 - 第1主面を有し、該第1主面上に、基板用ボンディングパッドが設けられた第1の領域と、該第1の領域に隣接された第2の領域とを有する基板と、
方形状の第2主面を有し、該第2主面と対向する裏面が前記第2の領域上に搭載されており、前記第2主面上のうち前記基板用ボンディングパッドに最も近い辺の近傍に前記基板用ボンディングパッドと電気的に接続されている半導体チップ用ボンディングパッドが複数設けられた第3の領域と、該該第3の領域に隣接された第4の領域とを有する半導体チップと、
方形状の第3主面を有し、該第3主面と対向する裏面が前記第4の領域上に搭載されており、前記第3主表面上には、前記半導体チップ用ボンディングパッドとそれぞれ電気的に接続されている第1及び第2の半導体チップパッケージ用ボンディングパッドが設けられているとともに、該第1及び第2の半導体チップパッケージ用ボンディングパッドを電気的に接続する再配線層と、該第1及び第2の半導体チップパッケージ用ボンディングパッドの頂面をそれぞれ露出させるように前記第3主面を覆う封止層とを有する半導体チップパッケージと
を具えていることを特徴とするマルチチップパッケージ。 - 第1主面を有し、該第1主面上に、第1の基板用ボンディングパッドが設けられた第1の領域と、第2の基板用ボンディングパッドが設けられた第2の領域と、該第1及び第2の領域に挟まれる位置に設けられた第3の領域とを有する基板と、
方形状の第2の主表面を有し、該第2主表面を画成する第1の辺の近傍に設けられた複数の第1の半導体チップパッケージ用ボンディングパッドと、前記第2主表面を画成する前記第1の辺と対向する第2の辺の近傍に設けられ、かつ第1の半導体チップパッケージ用ボンディングパッドと電気的に接続されている第2の半導体チップパッケージ用ボンディングパッドとを有する複数の半導体チップパッケージを、前記第1の半導体チップパッケージ用ボンディングパッドが露出するように該半導体チップパッケージの厚み方向にずらして積層されている積層体とを具え、
前記積層体は前記基板の前記第3の領域に搭載されているとともに、
前記第1の基板用ボンディングパッドと、前記基板に接している前記半導体チップパッケージの第1の半導体チップパッケージ用ボンディングパッドとは、第1のボンディングワイヤによって電気的に接続されており、
積層された下側の前記半導体チップパッケージの前記第1の半導体チップパッケージ用ボンディングパッドと、上側の半導体チップパッケージの前記第1の半導体チップパッケージ用ボンディングパッドとは、第2のボンディングワイヤによって電気的に接続されており、
前記基板から最も離れた前記半導体チップパッケージの前記第2の半導体チップパッケージ用ボンディングパッドと、前記第2の基板用ボンディングパッドとは、第3のボンディングワイヤによって電気的に接続されていることを特徴とするマルチチップパッケージ。 - 方形状の主表面を有する半導体チップと、
該主表面に、該主表面を画成する第1の辺に沿って平行に設けられ、1番目からn(nは2以上の整数)番目までの順に設けられた複数の第1の電極パッドを含む第1の電極パッド群と、
前記主表面に、該主表面を画成するとともに前記第1の辺と対向する第2の辺に沿って平行に設けられ、1番目からn(nは2以上の整数)番目までの順に設けられた複数の第2の電極パッドからなる第2の電極パッド群と、
を具える半導体チップ構造体を一対具え、
該一対の半導体チップ構造体のうちの一方の半導体チップ構造体は、さらに、
前記主表面のうちの前記第1の電極パッド群と前記第1の辺との間の領域に、該第1の辺と平行に該第1の電極パッドの各々に対応してn(nは2以上の整数)番目から1番目までの逆の順に設けられた第1のボンディングパッドを含む第1のボンディングパッド群と、
前記主表面のうちの前記第2の電極パッド群と前記第2の辺との間の領域に、該第2の辺と平行に該第2の電極パッドの各々に対応してn(nは2以上の整数)番目から1番目までの逆の順に設けられた第2のボンディングパッドを含む第2のボンディングパッド群と、
i(iは1からnの整数)番目の第1の電極パッドと、i(iは1からnの整数)番目の第1のボンディングパッドとをそれぞれ電気的に接続する第1の再配線層と、
i(iは1からnの整数)番目の第2の電極パッドと、i(iは1からnの整数)番目の第2のボンディングパッドとをそれぞれ電気的に接続する第2の再配線層と、
前記主表面上に、前記第1及び第2のボンディングパッドの頂面とをそれぞれ露出させる厚みで形成された封止層と
を具える半導体チップパッケージとして構成されており、
前記一対の半導体チップ構造体は、前記半導体チップ構造体の各々が具える前記半導体チップの裏面同士がそれぞれ向かい合うように、かつ各々の前記第1の辺を含む側面が同一方向を向くように積層されていることを特徴とするマルチチップパッケージ。 - 請求項12に記載のマルチチップパッケージにおいて、
さらに、前記一対の半導体チップ構造体を上方から平面的に見たとき、前記一対の半導体チップ構造体の前記第1及び第2の辺のそれぞれの側の側面に対向する位置にそれぞれ設けられ、かつ前記第1及び第2の辺と直交する方向に延在する複数の導体部を具えており、
一方の前記半導体チップ構造体側の i(iは1からnの整数)番目の前記第1のボンディングパッドと、他方の前記半導体チップ構造体側のi(iは1からnの整数)番目の前記第1の電極パッドとを、同一の前記導体部に対して第1のボンディングワイヤによってそれぞれ電気的に接続してあり、
一方の前記半導体チップ構造体側の i(iは1からnの整数)番目の前記第2のボンディングパッドと、他方の前記半導体チップ構造体側のi(iは1からnの整数)番目の前記第2の電極パッドとを、同一の前記導体部に対して第2のボンディングワイヤによってそれぞれ電気的に接続してあることを特徴とするマルチチップパッケージ。 - 方形状の主表面を有する半導体チップと、
該主表面に、1番目からn(nは2以上の整数)番目までの順に設けられた複数の第1の電極パッドを含む第1の電極パッド群と、1番目からn(nは2以上の整数)番目までの順に設けられた複数の第2の電極パッドを含む第2の電極パッド群とを具える半導体チップ構造体であって、
前記主表面を画成しかつ互いに対向する第1及び第2の辺間におけるこれら辺と平行に延在する仮想線に沿って、前記第1の電極パッド群が前記第1の辺側に設けられているとともに、前記第2の電極パッド群が前記第2の辺側に設けてある当該半導体チップ構造体を一対具え、
該一対の半導体チップ構造体のうちの一方の該半導体チップ構造体は、さらに
前記主表面のうちの前記第1の電極パッド群と前記第1の辺との間の領域に、該第1の辺と平行に該第1の電極パッドの各々に対応して1番目からn(nは2以上の整数)番目の順に設けられた複数の第1のボンディングパッドを含む第1のボンディングパッド群と、
前記主表面のうちの前記第2の電極パッド群と前記第2の辺との間の領域に、該第2の辺と平行に該第2の電極パッドの各々に対応して1番目からn(nは2以上の整数)番目の順に設けられた複数の第2のボンディングパッドからなる第2のボンディングパッド群と、
i(iは1からnの整数)番目の第1の電極パッドと、i(iは1からnの整数)番目の第1のボンディングパッドとをそれぞれ電気的に接続する第1の再配線層と、
i(iは1からnの整数)番目の第2の電極パッドと、i(iは1からnの整数)番目の第2のボンディングパッドとをそれぞれ電気的に接続する第2の再配線層と、
前記主表面上に、第1及び第2のボンディングパッドの頂面をそれぞれ露出させる厚みで形成された封止層と
を具える半導体チップパッケージとして構成されており、
該一対の半導体チップ構造体のうちの他方の該半導体チップ構造体は、さらに、
前記主表面のうちの前記第1の電極パッド群と前記第1の辺との間の領域に、該第1の辺と平行に該第1の電極パッドの各々に対応してn(nは2以上の整数)番目から1番目までの逆の順に設けられた第1のボンディングパッドを含む第1のボンディングパッド群と、
前記主表面のうちの前記第2の電極パッド群と前記第2の辺との間の領域に、該第2の辺と平行に該第2の電極パッドの各々に対応してn(nは2以上の整数)番目から1番目までの逆の順に設けられた第2のボンディングパッドを含む第2のボンディングパッド群と、
i(iは1からnの整数)番目の第1の電極パッドと、i(iは1からnの整数)番目の第1のボンディングパッドとをそれぞれ電気的に接続する第1の再配線層と、
i(iは1からnの整数)番目の第2の電極パッドと、i(iは1からnの整数)番目の第2のボンディングパッドとをそれぞれ電気的に接続する第2の再配線層と、
前記主表面上に、前記第1及び第2のボンディングパッドの頂面とをそれぞれ露出させる厚みで形成された封止層と
を具える半導体チップパッケージとして構成されており、
前記一対の半導体チップ構造体は、前記半導体チップ構造体の各々が具える前記半導体チップの裏面同士がそれぞれ向かい合うように、かつ各々の前記第1の辺を含む側面が同一方向を向くように積層されていることを特徴とするマルチチップパッケージ。 - 請求項14に記載のマルチチップパッケージにおいて、
前記仮想線は、前記第1の辺と前記第2の辺からの距離が等しい中心線とすることを特徴とするマルチチップパッケージ。 - 請求項14または15に記載のマルチチップパッケージにおいて、
さらに、前記一対の半導体チップ構造体を上方から平面的に見たとき、前記一対の半導体チップ構造体の前記第1及び第2の辺のそれぞれの側の側面に対向する位置にそれぞれ設けられ、かつ前記第1及び第2の辺と直交する方向に延在する複数の導体部を具えており、
一方の前記半導体チップ構造体側の i(iは1からnの整数)番目の前記第1のボンディングパッドと、他方の前記半導体チップ構造体側のi(iは1からnの整数)番目の前記第1の電極パッドとを、同一の前記導体部に対して第1のボンディングワイヤによってそれぞれ電気的に接続してあり、
一方の前記半導体チップ構造体側の i(iは1からnの整数)番目の前記第2のボンディングパッドと、他方の前記半導体チップ構造体側のi(iは1からnの整数)番目の前記第2の電極パッドとを、同一の前記導体部に対して第2のボンディングワイヤによってそれぞれ電気的に接続してあることを特徴とするマルチチップパッケージ。
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US20050139985A1 (en) | 2005-06-30 |
JP4103796B2 (ja) | 2008-06-18 |
US7576431B2 (en) | 2009-08-18 |
US7868470B2 (en) | 2011-01-11 |
US20090309205A1 (en) | 2009-12-17 |
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