[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

FR3109840B1 - Procédé de métallisation d’un substrat semi-conducteur, électrolyte et méthode de fabrication de 3D-NAND - Google Patents

Procédé de métallisation d’un substrat semi-conducteur, électrolyte et méthode de fabrication de 3D-NAND Download PDF

Info

Publication number
FR3109840B1
FR3109840B1 FR2004260A FR2004260A FR3109840B1 FR 3109840 B1 FR3109840 B1 FR 3109840B1 FR 2004260 A FR2004260 A FR 2004260A FR 2004260 A FR2004260 A FR 2004260A FR 3109840 B1 FR3109840 B1 FR 3109840B1
Authority
FR
France
Prior art keywords
semiconductor substrate
nand
electrolyte
manufacturing
cavities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2004260A
Other languages
English (en)
Other versions
FR3109840A1 (fr
Inventor
Dominique Suhr
Vincent Mevellec
Mikailou Thiam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aveni SA
Original Assignee
Aveni SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aveni SA filed Critical Aveni SA
Priority to FR2004260A priority Critical patent/FR3109840B1/fr
Priority to FR2100492A priority patent/FR3109839A1/fr
Priority to CN202180046309.2A priority patent/CN116134980A/zh
Priority to PCT/EP2021/061174 priority patent/WO2021219744A1/fr
Priority to EP21721551.6A priority patent/EP4143882A1/fr
Priority to KR1020217033149A priority patent/KR20210150415A/ko
Priority to TW110115684A priority patent/TW202208680A/zh
Publication of FR3109840A1 publication Critical patent/FR3109840A1/fr
Application granted granted Critical
Publication of FR3109840B1 publication Critical patent/FR3109840B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemically Coating (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Procédé de métallisation d’un substrat semi-conducteur, électrolyte et méthode de fabrication de 3D-NAND L’invention se rapporte à un procédé de métallisation d’un substrat semi-conducteur destiné notamment à la fabrication d’une mémoire 3D NAND, ledit substrat définissant un plan horizontal et possédant au moins deux séries de cavités horizontales débouchant chacune sur une cavité verticale. Ce procédé de métallisation peut comprendre une étape d’activation de la surface des cavités avec un métal noble comme le palladium, suivie d’une étape de dépôt d’un métal sur la surface activée avec une solution électroless comprenant des ions métalliques, au moins un agent réducteur des ions métalliques, au moins un premier suppresseur adapté aux cavités horizontales, et éventuellement au moins un deuxième suppresseur adapté à la cavité verticale. Figure pour l’abrégé : Fig. 1C.
FR2004260A 2020-04-29 2020-04-29 Procédé de métallisation d’un substrat semi-conducteur, électrolyte et méthode de fabrication de 3D-NAND Active FR3109840B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR2004260A FR3109840B1 (fr) 2020-04-29 2020-04-29 Procédé de métallisation d’un substrat semi-conducteur, électrolyte et méthode de fabrication de 3D-NAND
FR2100492A FR3109839A1 (fr) 2020-04-29 2021-01-19 Méthode de fabrication de 3D-NAND mettant en œuvre un alliage de nickel ou de cobalt
PCT/EP2021/061174 WO2021219744A1 (fr) 2020-04-29 2021-04-28 Procédé de fabrication de non-et 3d avec un alliage de nickel ou de cobalt
EP21721551.6A EP4143882A1 (fr) 2020-04-29 2021-04-28 Procédé de fabrication de non-et 3d avec un alliage de nickel ou de cobalt
CN202180046309.2A CN116134980A (zh) 2020-04-29 2021-04-28 使用镍或钴合金制造3d nand的方法
KR1020217033149A KR20210150415A (ko) 2020-04-29 2021-04-28 니켈 또는 코발트 합금을 사용한 3ｄ ｎａｎｄ 제조 방법
TW110115684A TW202208680A (zh) 2020-04-29 2021-04-29 使用鎳或鈷合金製造三維nand之方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2004260 2020-04-29
FR2004260A FR3109840B1 (fr) 2020-04-29 2020-04-29 Procédé de métallisation d’un substrat semi-conducteur, électrolyte et méthode de fabrication de 3D-NAND

Publications (2)

Publication Number Publication Date
FR3109840A1 FR3109840A1 (fr) 2021-11-05
FR3109840B1 true FR3109840B1 (fr) 2022-05-13

Family

ID=72266406

Family Applications (2)

Application Number Title Priority Date Filing Date
FR2004260A Active FR3109840B1 (fr) 2020-04-29 2020-04-29 Procédé de métallisation d’un substrat semi-conducteur, électrolyte et méthode de fabrication de 3D-NAND
FR2100492A Pending FR3109839A1 (fr) 2020-04-29 2021-01-19 Méthode de fabrication de 3D-NAND mettant en œuvre un alliage de nickel ou de cobalt

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR2100492A Pending FR3109839A1 (fr) 2020-04-29 2021-01-19 Méthode de fabrication de 3D-NAND mettant en œuvre un alliage de nickel ou de cobalt

Country Status (6)

Country Link
EP (1) EP4143882A1 (fr)
KR (1) KR20210150415A (fr)
CN (1) CN116134980A (fr)
FR (2) FR3109840B1 (fr)
TW (1) TW202208680A (fr)
WO (1) WO2021219744A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202338155A (zh) * 2022-02-07 2023-10-01 美商麥克達米德恩索龍股份有限公司 用來製造半導體裝置之以鎳或鈷合金進行金屬化的方法
WO2023187473A1 (fr) 2022-03-30 2023-10-05 Aveni Procédé de métallisation avec un alliage de nickel ou de cobalt pour la fabrication de dispositifs à semi-conducteur

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4401912B2 (ja) * 2003-10-17 2010-01-20 学校法人早稲田大学 半導体多層配線板の形成方法
US20060252252A1 (en) * 2005-03-18 2006-11-09 Zhize Zhu Electroless deposition processes and compositions for forming interconnects
FR2933425B1 (fr) 2008-07-01 2010-09-10 Alchimer Procede de preparation d'un film isolant electrique et application pour la metallisation de vias traversants
KR101495799B1 (ko) * 2009-02-16 2015-03-03 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조 방법
FR2950062B1 (fr) 2009-09-11 2012-08-03 Alchimer Solution et procede d'activation de la surface d'un substrat semi-conducteur
FR2950633B1 (fr) 2009-09-30 2011-11-25 Alchimer Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur.
FR2974818B1 (fr) 2011-05-05 2013-05-24 Alchimer Procede de depot de couches metalliques a base de nickel ou de cobalt sur un substrat solide semi-conducteur ; kit pour la mise en oeuvre de ce procede
WO2012164509A1 (fr) * 2011-06-01 2012-12-06 Basf Se Composition pour un électroplaquage métallique comprenant un additif pour un remplissage de haut en bas de trous traversant le silicium et caractéristiques d'interconnexion
CN110383478B (zh) * 2017-03-09 2023-06-27 东京毅力科创株式会社 接触焊盘的制造方法及使用该方法的半导体装置的制造方法、以及半导体装置
CN110289265B (zh) * 2019-06-28 2020-04-10 长江存储科技有限责任公司 3d nand存储器的形成方法

Also Published As

Publication number Publication date
CN116134980A (zh) 2023-05-16
WO2021219744A1 (fr) 2021-11-04
FR3109839A1 (fr) 2021-11-05
KR20210150415A (ko) 2021-12-10
EP4143882A1 (fr) 2023-03-08
TW202208680A (zh) 2022-03-01
FR3109840A1 (fr) 2021-11-05

Similar Documents

Publication Publication Date Title
FR3109840B1 (fr) Procédé de métallisation d’un substrat semi-conducteur, électrolyte et méthode de fabrication de 3D-NAND
CN107756722B (zh) 手机外壳及其制备方法
DE602004022435D1 (de) Verfahren für metall-ersetzungs-gate eines high-performance-bauelements
JP2008505486A5 (fr)
TW200616053A (en) A method for making a semiconductor device that includes a metal gate electrode
ATE541306T1 (de) Zinn-silber-lotbeulen bei der elektronikherstellung
WO2006102180A3 (fr) Procedes et processus de metallisation de contact
TW200743143A (en) Method for forming self-aligned metal silicide contacts
EP1591846A3 (fr) Couche intermédiair d' une structure de matrice avec une cavité contenant un métal alcalin
TW200710926A (en) Method for fabricating semiconductor device and semiconductor device
MA50169B1 (fr) Procédé de production d'un électrocatalyseur
EP2378543A3 (fr) Procédé de formation de motifs de semi-conducteur
GB201305214D0 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
TW200739746A (en) Method of manufacturing semiconductor device with different metallic gates
TW200709344A (en) Preamorphization to minimize void formation
CA2646189A1 (fr) Electrogalvanisation de metaux nobles d'elements en titane
Kim et al. Electrodeposition for the fabrication of copper interconnection in semiconductor devices
SG11201909369RA (en) Electroless plating process
CN101911257B (zh) 在阻挡层上具有钌电镀层的ulsi微细配线构件
Asano et al. A novel wafer dicing method using metal-assisted chemical etching
JP2013215752A (ja) 金属板のインクリメンタル成形加工方法
TW200625419A (en) Decreasing metal-silicide oxidation during wafer queue time description
WO2017066069A8 (fr) Phospha-adamantanes solubles dans l'eau et stables à l'air en tant que stabilisants pour le dépôt autocatalytique de métal
DE602004015270D1 (de) Verfahren zum herstellen einer halbleiter-vorrichtung mit selbstausrichtenden metallischen kontakten
TWI617699B (zh) Manufacturing method of wiring structure, copper-substituted plating liquid, and wiring structure

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20211105

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5