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FR2957449B1 - Micro-amplificateur de lecture pour memoire - Google Patents

Micro-amplificateur de lecture pour memoire Download PDF

Info

Publication number
FR2957449B1
FR2957449B1 FR1051748A FR1051748A FR2957449B1 FR 2957449 B1 FR2957449 B1 FR 2957449B1 FR 1051748 A FR1051748 A FR 1051748A FR 1051748 A FR1051748 A FR 1051748A FR 2957449 B1 FR2957449 B1 FR 2957449B1
Authority
FR
France
Prior art keywords
amplifier
input
inverter
memory
readout
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1051748A
Other languages
English (en)
Other versions
FR2957449A1 (fr
Inventor
Carlos Mazure
Richard Ferrant
Bich-Yen Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1051748A priority Critical patent/FR2957449B1/fr
Priority to US12/789,100 priority patent/US8358552B2/en
Priority to EP10175834A priority patent/EP2365487A3/fr
Priority to TW99130848A priority patent/TWI473108B/zh
Priority to SG2010066959A priority patent/SG174661A1/en
Priority to SG2014006118A priority patent/SG2014006118A/en
Priority to CN201010299692.6A priority patent/CN102194507B/zh
Priority to KR1020100094276A priority patent/KR101281915B1/ko
Priority to JP2010219573A priority patent/JP2011192373A/ja
Publication of FR2957449A1 publication Critical patent/FR2957449A1/fr
Priority to US13/718,571 priority patent/US8625374B2/en
Application granted granted Critical
Publication of FR2957449B1 publication Critical patent/FR2957449B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/4016—Memory devices with silicon-on-insulator cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

L'invention concerne selon un premier aspect un amplificateur de lecture d'une série de cellules d'une mémoire réinscriptible, comportant : - un étage d'écriture comprenant un inverseur CMOS dont l'entrée est reliée directement ou indirectement à une borne d'entrée de l'amplificateur de lecture, et dont la sortie est reliée à une borne de sortie de l'amplificateur de lecture destinée à être reliée à une ligne de bit locale adressant les cellules de ladite série - un étage de lecture comprenant un transistor de lecture dont la grille est reliée à la sortie de l'inverseur et dont le drain est relié à l'entrée de l'inverseur.
FR1051748A 2010-03-11 2010-03-11 Micro-amplificateur de lecture pour memoire Active FR2957449B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR1051748A FR2957449B1 (fr) 2010-03-11 2010-03-11 Micro-amplificateur de lecture pour memoire
US12/789,100 US8358552B2 (en) 2010-03-11 2010-05-27 Nano-sense amplifier
EP10175834A EP2365487A3 (fr) 2010-03-11 2010-09-08 Nano-amplificateur de lecture pour une mémoire
TW99130848A TWI473108B (zh) 2010-03-11 2010-09-13 用於記憶體之奈級感測放大器
SG2014006118A SG2014006118A (en) 2010-03-11 2010-09-15 Nano-sense amplifier for memory
SG2010066959A SG174661A1 (en) 2010-03-11 2010-09-15 Nano-sense amplifier for memory
CN201010299692.6A CN102194507B (zh) 2010-03-11 2010-09-28 用于存储器的纳米灵敏放大器
KR1020100094276A KR101281915B1 (ko) 2010-03-11 2010-09-29 메모리용 나노-센스 증폭기
JP2010219573A JP2011192373A (ja) 2010-03-11 2010-09-29 メモリ用ナノセンス増幅器
US13/718,571 US8625374B2 (en) 2010-03-11 2012-12-18 Nano-sense amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1051748A FR2957449B1 (fr) 2010-03-11 2010-03-11 Micro-amplificateur de lecture pour memoire

Publications (2)

Publication Number Publication Date
FR2957449A1 FR2957449A1 (fr) 2011-09-16
FR2957449B1 true FR2957449B1 (fr) 2022-07-15

Family

ID=42289496

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1051748A Active FR2957449B1 (fr) 2010-03-11 2010-03-11 Micro-amplificateur de lecture pour memoire

Country Status (7)

Country Link
US (2) US8358552B2 (fr)
JP (1) JP2011192373A (fr)
KR (1) KR101281915B1 (fr)
CN (1) CN102194507B (fr)
FR (1) FR2957449B1 (fr)
SG (2) SG174661A1 (fr)
TW (1) TWI473108B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2953643B1 (fr) * 2009-12-08 2012-07-27 Soitec Silicon On Insulator Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante
FR2974656B1 (fr) * 2011-04-26 2013-05-17 Soitec Silicon On Insulator Amplificateur de detection differentiel sans transistor a grille de passage dedie
FR2974666B1 (fr) 2011-04-26 2013-05-17 Soitec Silicon On Insulator Amplificateur de detection differentiel sans transistor de precharge dedie
US8754635B2 (en) * 2011-06-14 2014-06-17 Infineon Technologies Ag DC decoupled current measurement
EP2605407A1 (fr) * 2011-12-13 2013-06-19 Soitec Porte à trois états
FR2985839B1 (fr) 2012-01-16 2014-02-07 Soitec Silicon On Insulator Circuit et procede pour detecter une difference de tension sur une paire de lignes de signal duales, en particulier par un transistor d'egalisation
FR2988535B1 (fr) 2012-03-23 2014-03-07 Soitec Silicon On Insulator Circuit de pompage de charge a transistors munis de portes doubles en phase, et procédé de fonctionnement dudit circuit.
CN102956693B (zh) * 2012-11-01 2015-12-09 无锡中星微电子有限公司 一种finfet以及采用该finfet的应用电路
US8934286B2 (en) 2013-01-23 2015-01-13 International Business Machines Corporation Complementary metal-oxide-semiconductor (CMOS) dynamic random access memory (DRAM) cell with sense amplifier
FR2996345A1 (fr) * 2013-03-25 2014-04-04 Soitec Silicon On Insulator Amplificateur de detection a bas voltage
US11037622B2 (en) * 2017-11-24 2021-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and dynamic logic circuit
CN113270131A (zh) * 2021-05-17 2021-08-17 南京博芯电子技术有限公司 一种半电压预充型灵敏放大器

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US20130100749A1 (en) 2013-04-25
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US8358552B2 (en) 2013-01-22
SG174661A1 (en) 2011-10-28
US20110222361A1 (en) 2011-09-15
SG2014006118A (en) 2014-03-28
KR101281915B1 (ko) 2013-07-03
TW201131576A (en) 2011-09-16
US8625374B2 (en) 2014-01-07
CN102194507A (zh) 2011-09-21
TWI473108B (zh) 2015-02-11
CN102194507B (zh) 2015-03-11
JP2011192373A (ja) 2011-09-29

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