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ES2627686T3 - Substrato transparente provisto de un electrodo - Google Patents

Substrato transparente provisto de un electrodo Download PDF

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Publication number
ES2627686T3
ES2627686T3 ES11170582.8T ES11170582T ES2627686T3 ES 2627686 T3 ES2627686 T3 ES 2627686T3 ES 11170582 T ES11170582 T ES 11170582T ES 2627686 T3 ES2627686 T3 ES 2627686T3
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Prior art keywords
layer
electrode
tin
molybdenum
si3n4
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Expired - Lifetime
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ES11170582.8T
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English (en)
Inventor
Nikolas Janke
Ulf Blieske
Renaud Fix
Thibaut Heitz
Véronique Rondeau
Bertrand Neander
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Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
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Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Surface Treatment Of Glass (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Substrato transparente, en particular, de vidrio, provisto de un electrodo, en particular, para célula solar, que incluye una capa conductora a base de molibdeno Mo, caracterizado porque dicha capa a base de molibdeno es a lo sumo de 500 nm de espesor, en particular, a lo sumo de 400 nm o a lo sumo de 300 nm o a lo sumo de 200 nm y porque el electrodo incluye al menos una capa conductora complementaria, diferente de la capa a base de molibdeno, siendo la capa conductora complementaria M a base de metal o de aleación metálica y por debajo de la capa conductora a base de molibdeno Mo, porque el electrodo incluye al menos una capa conductora complementaria M'N a base de un nitruro sub-estequiométrico, estequiométrico o sobre-estequiométrico, en nitrógeno, de al menos uno de los siguientes metales: Ta, Zr, Nb, Ti, Mo, Hf, y porque la capa M'N está por debajo de la capa a base de molibdeno Mo y dispuesta entre la capa M y la capa a base de Mo.

Description

imagen1
imagen2
imagen3
imagen4
La figura 2 corresponde a una fotografía de una ampliación 1000 veces con la ayuda de un microscopio de este ejemplo 5, de una porción del vidrio de capas después del ensayo de selenización: se ven pocos defectos, de tamaño muy pequeño. Esto es una imagen completamente comparable con la fotografía según la figura 1.
Ejemplo 6 5 Este ejemplo utiliza una capa-barrera y un electrodo de tres capas, según la siguiente secuencia:
Vidrio/Si3N4 (200 nm) /Ag (50 nm) /TiN (100 nm) /Mo (175 nm) Corresponde al ejemplo 2, con una capa de TiN de más. Ejemplo 7
Este ejemplo utiliza siempre una capa-barrera y un electrodo de tres capas, según la siguiente secuencia: 10 Vidrio/Si3N4 (200 nm) /Al (100 nm) /TiN (100 nm) /Mo (175 nm)
Corresponde al ejemplo 3, con una capa de TiN de más. La tabla 1 presentada más abajo recoge, para cada uno de los ejemplos 1 a 7, los valores de R□ (1), R□ (2), la evaluación de los defectos después del ensayo de bronce (“defectos”, y ΔR□ (3), estando estos términos explicados más arriba.
15 Tabla 1
EJEMPLOS
R (1) R (2) DEFECTOS Δ R (3)
Ej. 1 Si3N4/Mo
0,37 0,37 Ninguno 0 a -5%
Ej. 1 bis Si3N4/Mo
0,98 0,96 Ninguno 0 a -3%
Ej. 2 Si3N4/Ag/Mo
0,42 0,42 Ninguno -17%
Ej. 3 Si3N4/Al/Mo
0,36 0,34 Ninguno -
Ej. 4 Si3N4/Cu/TiN/Mo
0,45 0,45 Ninguno -9%
Ej. 5 Si3N4/Cu/TiN/Mo
0,44 0,44 Ninguno -10%
Ej. 6 Si3N4/Ag/TiN/Mo
0,44 0,44 Ninguno -12%
Ej. 7 Si3N4/Al/TiN/Mo
0,38 0,36 Ninguno -
De estos datos se pueden obtener las siguientes conclusiones:
Se puede obtener un valor de R claramente inferior a 1 ohmio/cuadrado con menos de 200 nm de molibdeno, que se asocia con una capa de nitruro metálica y/o de metal de espesores razonables (en todo, los electrodos bi o tricapas
20 siguen siendo de un espesor global inferior a 400 ó 500 nm).
Las capas-barrera de Si3N4 son eficaces, e impiden el deterioro del electrodo por difusión del sodio, puesto que en todos los ejemplos, los valores de R□ (1) y R□ (2) son los mismos o casi los mismos. Por lo tanto, impiden también el deterioro de la capa de agente absorbente tipo CIS.
6 5
10
15
20
25
30
35
40
Se puede elegir también tener un electrodo de una sola capa de Mo (ejemplo 1), con 500 nm y asociada a una capabarrera. Da buenos resultados: Se puede también tener una resistencia por cuadrado inferior a 1 ohm.cuadrado con un electrodo compuesto solamente de 200 nm de Mo. Esto demuestra que es inútil recurrir a una capa de Mo mucho más gruesa tal como se pudo hacer esto hasta ahora.
EJEMPLOS 8 a 11 TER
Estos ejemplos tienen como objeto ajustar la colorimetría del electrodo en reflexión. La capa de molibdeno es en todos estos ejemplos de un espesor de 400 nm o 500 nm. En cuanto a la colorimetría de la parte del vidrio, no tiene influencia a partir del momento en que es gruesa de al menos 50 a 100 nm, puesto
que es entonces una capa-espejo perfectamente opaca: los resultados serían por lo tanto los mismos con una capa de Mo de 175 ó 200 nm. Ejemplo 8 Este ejemplo utiliza el siguiente apilamiento:
Vidrio/Si3N4 (200 nm) /TiN (100 nm) /Mo (400 nm)
La capa de TiN que está depositada por pulverización reactiva en una atmósfera reactiva que contiene 20% en volumen de nitrógeno. Ejemplo 8bis Se trata de la misma configuración que la del ejemplo 8, pero aquí se depositó la capa de TiN en una atmósfera que
contenía un 40% de nitrógeno. Ejemplo 8 de ter Se trata de la misma configuración que la del ejemplo 8, pero aquí se depositó la capa de TiN en una atmósfera que
contenía 70% de nitrógeno. La tabla siguiente recoge para estos tres ejemplos los valores de a* y b*, según el sistema de colorimetría (L, a*, b*) medidos por la parte del vidrio, así como los valores de R□ (medidas hechas antes “del ensayo de bronce”)
EJEMPLOS
a* b* R (ohm.cuadrado)
Ej. 8
-8,6 19,4 0,44
Ej. 8bis
-9,2 1,5 0,38
Ej. 8ter
-11,6 -3,6 0,35
Se constata que la variación en la estequiometría con TiN (en función de la tasa de N2 durante la deposición) no modifica significativamente las propiedades eléctricas del electrodo. Por el contrario, permite modificar mucho los valores de a*, y, más aún, de b*: el ejemplo 8 es así coloreado en rojos, con un b* muy positivo, mientras que el ejemplo 8ter está en los azules-verdes, con un b* ligeramente negativo.
El ejemplo 8 tiene una capa de TiN ligeramente sub-estequiométrica, el ejemplo 8bis tiene una capa de TiN aproximadamente estequiométrica, mientras que el ejemplo 8ter tiende a ser sobre-estequiométrico en nitrógeno.
Ejemplo 9 En este ejemplo, la capa-barrera de Si3N4 (índice de refracción de aproximadamente 2) se asocia a una capa suplementaria a base de SiO2 (índice de refracción de aproximadamente 1,45) para hacer un revestimiento óptico alto índice/bajo índice.
La configuración es la siguiente:
Vidrio/Si3N4 (200 nm) /SiO2 (20 nm) /TiN (100 nm) /Mo (400 nm) La capa de TiN se deposita en una atmósfera que tiene 20% en volumen de nitrógeno. Ejemplo 9bis Se replica el ejemplo 9, con esta vez 40% de nitrógeno en la atmósfera de deposición del TiN.
7
imagen5
imagen6

Claims (1)

  1. imagen1
ES11170582.8T 2001-01-31 2002-01-23 Substrato transparente provisto de un electrodo Expired - Lifetime ES2627686T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0101292A FR2820241B1 (fr) 2001-01-31 2001-01-31 Substrat transparent muni d'une electrode
FR0101292 2001-01-31

Publications (1)

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ES2627686T3 true ES2627686T3 (es) 2017-07-31

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US (3) US8148631B2 (es)
EP (5) EP2369635B1 (es)
JP (3) JP4537000B2 (es)
KR (1) KR100949600B1 (es)
CN (1) CN1327533C (es)
AU (1) AU2002233459A1 (es)
BR (1) BR0206785A (es)
ES (1) ES2627686T3 (es)
FR (1) FR2820241B1 (es)
MX (1) MXPA03006682A (es)
PT (1) PT2369633T (es)
WO (1) WO2002065554A1 (es)

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