ES2627686T3 - Substrato transparente provisto de un electrodo - Google Patents
Substrato transparente provisto de un electrodo Download PDFInfo
- Publication number
- ES2627686T3 ES2627686T3 ES11170582.8T ES11170582T ES2627686T3 ES 2627686 T3 ES2627686 T3 ES 2627686T3 ES 11170582 T ES11170582 T ES 11170582T ES 2627686 T3 ES2627686 T3 ES 2627686T3
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- Prior art keywords
- layer
- electrode
- tin
- molybdenum
- si3n4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 14
- 239000011521 glass Substances 0.000 abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011733 molybdenum Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 230000000295 complement effect Effects 0.000 abstract 3
- 241001279686 Allium moly Species 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 24
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000004737 colorimetric analysis Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Non-Insulated Conductors (AREA)
- Surface Treatment Of Glass (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Substrato transparente, en particular, de vidrio, provisto de un electrodo, en particular, para célula solar, que incluye una capa conductora a base de molibdeno Mo, caracterizado porque dicha capa a base de molibdeno es a lo sumo de 500 nm de espesor, en particular, a lo sumo de 400 nm o a lo sumo de 300 nm o a lo sumo de 200 nm y porque el electrodo incluye al menos una capa conductora complementaria, diferente de la capa a base de molibdeno, siendo la capa conductora complementaria M a base de metal o de aleación metálica y por debajo de la capa conductora a base de molibdeno Mo, porque el electrodo incluye al menos una capa conductora complementaria M'N a base de un nitruro sub-estequiométrico, estequiométrico o sobre-estequiométrico, en nitrógeno, de al menos uno de los siguientes metales: Ta, Zr, Nb, Ti, Mo, Hf, y porque la capa M'N está por debajo de la capa a base de molibdeno Mo y dispuesta entre la capa M y la capa a base de Mo.
Description
La figura 2 corresponde a una fotografía de una ampliación 1000 veces con la ayuda de un microscopio de este ejemplo 5, de una porción del vidrio de capas después del ensayo de selenización: se ven pocos defectos, de tamaño muy pequeño. Esto es una imagen completamente comparable con la fotografía según la figura 1.
Ejemplo 6 5 Este ejemplo utiliza una capa-barrera y un electrodo de tres capas, según la siguiente secuencia:
Vidrio/Si3N4 (200 nm) /Ag (50 nm) /TiN (100 nm) /Mo (175 nm) Corresponde al ejemplo 2, con una capa de TiN de más. Ejemplo 7
Este ejemplo utiliza siempre una capa-barrera y un electrodo de tres capas, según la siguiente secuencia: 10 Vidrio/Si3N4 (200 nm) /Al (100 nm) /TiN (100 nm) /Mo (175 nm)
Corresponde al ejemplo 3, con una capa de TiN de más. La tabla 1 presentada más abajo recoge, para cada uno de los ejemplos 1 a 7, los valores de R□ (1), R□ (2), la evaluación de los defectos después del ensayo de bronce (“defectos”, y ΔR□ (3), estando estos términos explicados más arriba.
15 Tabla 1
- EJEMPLOS
- R (1) R (2) DEFECTOS Δ R (3)
- Ej. 1 Si3N4/Mo
- 0,37 0,37 Ninguno 0 a -5%
- Ej. 1 bis Si3N4/Mo
- 0,98 0,96 Ninguno 0 a -3%
- Ej. 2 Si3N4/Ag/Mo
- 0,42 0,42 Ninguno -17%
- Ej. 3 Si3N4/Al/Mo
- 0,36 0,34 Ninguno -
- Ej. 4 Si3N4/Cu/TiN/Mo
- 0,45 0,45 Ninguno -9%
- Ej. 5 Si3N4/Cu/TiN/Mo
- 0,44 0,44 Ninguno -10%
- Ej. 6 Si3N4/Ag/TiN/Mo
- 0,44 0,44 Ninguno -12%
- Ej. 7 Si3N4/Al/TiN/Mo
- 0,38 0,36 Ninguno -
De estos datos se pueden obtener las siguientes conclusiones:
Se puede obtener un valor de R claramente inferior a 1 ohmio/cuadrado con menos de 200 nm de molibdeno, que se asocia con una capa de nitruro metálica y/o de metal de espesores razonables (en todo, los electrodos bi o tricapas
20 siguen siendo de un espesor global inferior a 400 ó 500 nm).
Las capas-barrera de Si3N4 son eficaces, e impiden el deterioro del electrodo por difusión del sodio, puesto que en todos los ejemplos, los valores de R□ (1) y R□ (2) son los mismos o casi los mismos. Por lo tanto, impiden también el deterioro de la capa de agente absorbente tipo CIS.
6 5
10
15
20
25
30
35
40
Se puede elegir también tener un electrodo de una sola capa de Mo (ejemplo 1), con 500 nm y asociada a una capabarrera. Da buenos resultados: Se puede también tener una resistencia por cuadrado inferior a 1 ohm.cuadrado con un electrodo compuesto solamente de 200 nm de Mo. Esto demuestra que es inútil recurrir a una capa de Mo mucho más gruesa tal como se pudo hacer esto hasta ahora.
EJEMPLOS 8 a 11 TER
Estos ejemplos tienen como objeto ajustar la colorimetría del electrodo en reflexión. La capa de molibdeno es en todos estos ejemplos de un espesor de 400 nm o 500 nm. En cuanto a la colorimetría de la parte del vidrio, no tiene influencia a partir del momento en que es gruesa de al menos 50 a 100 nm, puesto
que es entonces una capa-espejo perfectamente opaca: los resultados serían por lo tanto los mismos con una capa de Mo de 175 ó 200 nm. Ejemplo 8 Este ejemplo utiliza el siguiente apilamiento:
Vidrio/Si3N4 (200 nm) /TiN (100 nm) /Mo (400 nm)
La capa de TiN que está depositada por pulverización reactiva en una atmósfera reactiva que contiene 20% en volumen de nitrógeno. Ejemplo 8bis Se trata de la misma configuración que la del ejemplo 8, pero aquí se depositó la capa de TiN en una atmósfera que
contenía un 40% de nitrógeno. Ejemplo 8 de ter Se trata de la misma configuración que la del ejemplo 8, pero aquí se depositó la capa de TiN en una atmósfera que
contenía 70% de nitrógeno. La tabla siguiente recoge para estos tres ejemplos los valores de a* y b*, según el sistema de colorimetría (L, a*, b*) medidos por la parte del vidrio, así como los valores de R□ (medidas hechas antes “del ensayo de bronce”)
- EJEMPLOS
- a* b* R (ohm.cuadrado)
- Ej. 8
- -8,6 19,4 0,44
- Ej. 8bis
- -9,2 1,5 0,38
- Ej. 8ter
- -11,6 -3,6 0,35
Se constata que la variación en la estequiometría con TiN (en función de la tasa de N2 durante la deposición) no modifica significativamente las propiedades eléctricas del electrodo. Por el contrario, permite modificar mucho los valores de a*, y, más aún, de b*: el ejemplo 8 es así coloreado en rojos, con un b* muy positivo, mientras que el ejemplo 8ter está en los azules-verdes, con un b* ligeramente negativo.
El ejemplo 8 tiene una capa de TiN ligeramente sub-estequiométrica, el ejemplo 8bis tiene una capa de TiN aproximadamente estequiométrica, mientras que el ejemplo 8ter tiende a ser sobre-estequiométrico en nitrógeno.
Ejemplo 9 En este ejemplo, la capa-barrera de Si3N4 (índice de refracción de aproximadamente 2) se asocia a una capa suplementaria a base de SiO2 (índice de refracción de aproximadamente 1,45) para hacer un revestimiento óptico alto índice/bajo índice.
La configuración es la siguiente:
Vidrio/Si3N4 (200 nm) /SiO2 (20 nm) /TiN (100 nm) /Mo (400 nm) La capa de TiN se deposita en una atmósfera que tiene 20% en volumen de nitrógeno. Ejemplo 9bis Se replica el ejemplo 9, con esta vez 40% de nitrógeno en la atmósfera de deposición del TiN.
7
Claims (1)
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imagen1
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0101292A FR2820241B1 (fr) | 2001-01-31 | 2001-01-31 | Substrat transparent muni d'une electrode |
FR0101292 | 2001-01-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2627686T3 true ES2627686T3 (es) | 2017-07-31 |
Family
ID=8859441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES11170582.8T Expired - Lifetime ES2627686T3 (es) | 2001-01-31 | 2002-01-23 | Substrato transparente provisto de un electrodo |
Country Status (12)
Country | Link |
---|---|
US (3) | US8148631B2 (es) |
EP (5) | EP2369635B1 (es) |
JP (3) | JP4537000B2 (es) |
KR (1) | KR100949600B1 (es) |
CN (1) | CN1327533C (es) |
AU (1) | AU2002233459A1 (es) |
BR (1) | BR0206785A (es) |
ES (1) | ES2627686T3 (es) |
FR (1) | FR2820241B1 (es) |
MX (1) | MXPA03006682A (es) |
PT (1) | PT2369633T (es) |
WO (1) | WO2002065554A1 (es) |
Families Citing this family (101)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8222513B2 (en) | 2006-04-13 | 2012-07-17 | Daniel Luch | Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture |
US8138413B2 (en) | 2006-04-13 | 2012-03-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US20090111206A1 (en) | 1999-03-30 | 2009-04-30 | Daniel Luch | Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture |
US7507903B2 (en) | 1999-03-30 | 2009-03-24 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8664030B2 (en) | 1999-03-30 | 2014-03-04 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8198696B2 (en) | 2000-02-04 | 2012-06-12 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
JP3910072B2 (ja) * | 2002-01-30 | 2007-04-25 | 東洋アルミニウム株式会社 | ペースト組成物およびそれを用いた太陽電池 |
WO2004032189A2 (en) | 2002-09-30 | 2004-04-15 | Miasolé | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
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US20070163639A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from microflake particles |
US20070163642A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles |
US20060060237A1 (en) * | 2004-09-18 | 2006-03-23 | Nanosolar, Inc. | Formation of solar cells on foil substrates |
US20070163641A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles |
US8372734B2 (en) * | 2004-02-19 | 2013-02-12 | Nanosolar, Inc | High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles |
JP4695850B2 (ja) * | 2004-04-28 | 2011-06-08 | 本田技研工業株式会社 | カルコパイライト型太陽電池 |
US8541048B1 (en) | 2004-09-18 | 2013-09-24 | Nanosolar, Inc. | Formation of photovoltaic absorber layers on foil substrates |
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US20090032108A1 (en) * | 2007-03-30 | 2009-02-05 | Craig Leidholm | Formation of photovoltaic absorber layers on foil substrates |
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US7838868B2 (en) | 2005-01-20 | 2010-11-23 | Nanosolar, Inc. | Optoelectronic architecture having compound conducting substrate |
JP4663300B2 (ja) * | 2004-11-18 | 2011-04-06 | 本田技研工業株式会社 | カルコパイライト型薄膜太陽電池の製造方法 |
JP2006165386A (ja) * | 2004-12-09 | 2006-06-22 | Showa Shell Sekiyu Kk | Cis系薄膜太陽電池及びその作製方法 |
JP4664060B2 (ja) * | 2004-12-21 | 2011-04-06 | 本田技研工業株式会社 | カルコパイライト型太陽電池 |
US8927315B1 (en) | 2005-01-20 | 2015-01-06 | Aeris Capital Sustainable Ip Ltd. | High-throughput assembly of series interconnected solar cells |
JP4969785B2 (ja) * | 2005-02-16 | 2012-07-04 | 本田技研工業株式会社 | カルコパイライト型太陽電池及びその製造方法 |
JP3963924B2 (ja) | 2005-07-22 | 2007-08-22 | 本田技研工業株式会社 | カルコパイライト型太陽電池 |
JP2007096031A (ja) * | 2005-09-29 | 2007-04-12 | Showa Shell Sekiyu Kk | Cis系薄膜太陽電池モジュール及びその製造方法 |
JP4918247B2 (ja) * | 2005-10-31 | 2012-04-18 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池モジュール及びその製造方法 |
US8389852B2 (en) * | 2006-02-22 | 2013-03-05 | Guardian Industries Corp. | Electrode structure for use in electronic device and method of making same |
US8822810B2 (en) | 2006-04-13 | 2014-09-02 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9865758B2 (en) | 2006-04-13 | 2018-01-09 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9236512B2 (en) | 2006-04-13 | 2016-01-12 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9006563B2 (en) | 2006-04-13 | 2015-04-14 | Solannex, Inc. | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8884155B2 (en) | 2006-04-13 | 2014-11-11 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8729385B2 (en) | 2006-04-13 | 2014-05-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9147778B2 (en) * | 2006-11-07 | 2015-09-29 | First Solar, Inc. | Photovoltaic devices including nitrogen-containing metal contact |
WO2008121997A2 (en) * | 2007-03-30 | 2008-10-09 | Craig Leidholm | Formation of photovoltaic absorber layers on foil substrates |
FR2922046B1 (fr) * | 2007-10-05 | 2011-06-24 | Saint Gobain | Perfectionnements apportes a des elements capables de collecter de la lumiere |
FR2924863B1 (fr) * | 2007-12-07 | 2017-06-16 | Saint Gobain | Perfectionnements apportes a des elements capables de collecter de la lumiere. |
AT10578U1 (de) * | 2007-12-18 | 2009-06-15 | Plansee Metall Gmbh | Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht |
US8981211B2 (en) * | 2008-03-18 | 2015-03-17 | Zetta Research and Development LLC—AQT Series | Interlayer design for epitaxial growth of semiconductor layers |
US20090260678A1 (en) * | 2008-04-16 | 2009-10-22 | Agc Flat Glass Europe S.A. | Glass substrate bearing an electrode |
US20100180927A1 (en) * | 2008-08-27 | 2010-07-22 | Stion Corporation | Affixing method and solar decal device using a thin film photovoltaic and interconnect structures |
DE202008018125U1 (de) | 2008-09-08 | 2011-12-27 | Saint-Gobain Glass France | Verbesserungen an Elementen, die Licht aufnehmen können |
US8115095B2 (en) * | 2009-02-20 | 2012-02-14 | Miasole | Protective layer for large-scale production of thin-film solar cells |
JP2010212336A (ja) * | 2009-03-09 | 2010-09-24 | Fujifilm Corp | 光電変換素子とその製造方法、及び太陽電池 |
US8134069B2 (en) | 2009-04-13 | 2012-03-13 | Miasole | Method and apparatus for controllable sodium delivery for thin film photovoltaic materials |
US8247243B2 (en) | 2009-05-22 | 2012-08-21 | Nanosolar, Inc. | Solar cell interconnection |
JP2010282997A (ja) * | 2009-06-02 | 2010-12-16 | Seiko Epson Corp | 太陽電池、太陽電池の製造方法 |
CN101931011A (zh) * | 2009-06-26 | 2010-12-29 | 安泰科技股份有限公司 | 薄膜太阳能电池及其基带和制备方法 |
JP5114683B2 (ja) * | 2009-09-07 | 2013-01-09 | 新日鐵住金株式会社 | 太陽電池用ガラス基板の裏面電極及びその製造方法 |
US20110067998A1 (en) * | 2009-09-20 | 2011-03-24 | Miasole | Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing |
US20110162696A1 (en) * | 2010-01-05 | 2011-07-07 | Miasole | Photovoltaic materials with controllable zinc and sodium content and method of making thereof |
US20110259395A1 (en) * | 2010-04-21 | 2011-10-27 | Stion Corporation | Single Junction CIGS/CIS Solar Module |
FR2961954B1 (fr) * | 2010-06-25 | 2012-07-13 | Saint Gobain | Cellule comprenant un materiau photovoltaique a base de cadmium |
JP5667027B2 (ja) * | 2010-11-02 | 2015-02-12 | 富士フイルム株式会社 | 太陽電池サブモジュール及びその製造方法、電極付き基板 |
FR2969389A1 (fr) | 2010-12-21 | 2012-06-22 | Saint Gobain | Substrat conducteur a base de molybdène |
KR101219948B1 (ko) * | 2011-01-27 | 2013-01-21 | 엘지이노텍 주식회사 | 태양광 발전장치 및 제조방법 |
GB201101910D0 (en) * | 2011-02-04 | 2011-03-23 | Pilkington Group Ltd | Growth layer for the photovol taic applications |
FR2977078B1 (fr) * | 2011-06-27 | 2013-06-28 | Saint Gobain | Substrat conducteur pour cellule photovoltaique |
US8642884B2 (en) * | 2011-09-09 | 2014-02-04 | International Business Machines Corporation | Heat treatment process and photovoltaic device based on said process |
FR2982422B1 (fr) | 2011-11-09 | 2013-11-15 | Saint Gobain | Substrat conducteur pour cellule photovoltaique |
US10043921B1 (en) | 2011-12-21 | 2018-08-07 | Beijing Apollo Ding Rong Solar Technology Co., Ltd. | Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof |
DE102012205378A1 (de) * | 2012-04-02 | 2013-10-02 | Robert Bosch Gmbh | Verfahren zur Herstellung von Dünnschichtsolarmodulen sowie nach diesem Verfahren erhältliche Dünnschichtsolarmodule |
DE102012205377A1 (de) * | 2012-04-02 | 2013-10-02 | Robert Bosch Gmbh | Mehrschicht-Rückelektrode für eine photovoltaische Dünnschichtsolarzelle, Verwendung der Mehrschicht-Rückelektrode für die Herstellung von Dünnschichtsolarzellen und -modulen, photovoltaische Dünnschichtsolarzellen und -module enthaltend die Mehrschicht-Rückelektrode sowie ein Verfahren zur Herstellung photovoltaischer Dünnschichtsolarzellen und -module |
DE102012205375A1 (de) * | 2012-04-02 | 2013-10-02 | Robert Bosch Gmbh | Mehrschicht-Rückelektrode für eine photovoltaische Dünnschichtsolarzelle, Verwen-dung der Mehrschicht-Rückelektrode für die Herstellung von Dünnschichtsolarzellen und -modulen, photovoltaische Dünnschichtsolarzellen und -module enthaltend die Mehrschicht-Rückelektrode sowie ein Verfahren zur Herstellung photovoltaischer Dünnschichtsolarzellen und -module |
US9246025B2 (en) * | 2012-04-25 | 2016-01-26 | Guardian Industries Corp. | Back contact for photovoltaic devices such as copper-indium-diselenide solar cells |
US9935211B2 (en) | 2012-04-25 | 2018-04-03 | Guardian Glass, LLC | Back contact structure for photovoltaic devices such as copper-indium-diselenide solar cells |
US9159850B2 (en) * | 2012-04-25 | 2015-10-13 | Guardian Industries Corp. | Back contact having selenium blocking layer for photovoltaic devices such as copper—indium-diselenide solar cells |
US8809674B2 (en) | 2012-04-25 | 2014-08-19 | Guardian Industries Corp. | Back electrode configuration for electroplated CIGS photovoltaic devices and methods of making same |
US9419151B2 (en) | 2012-04-25 | 2016-08-16 | Guardian Industries Corp. | High-reflectivity back contact for photovoltaic devices such as copper—indium-diselenide solar cells |
WO2013190898A1 (ja) * | 2012-06-19 | 2013-12-27 | 富士電機株式会社 | カルコパイライト型光電変換素子、裏面電極、およびその製造方法 |
US9871155B2 (en) | 2012-06-20 | 2018-01-16 | Bengbu Design & Research Institute For Glass Industry | Layer system for thin-film solar cells having an NaxIn1SyClz buffer layer |
WO2013189976A1 (de) | 2012-06-20 | 2013-12-27 | Saint-Gobain Glass France | Schichtsystem für dünnschichtsolarzellen |
EP2865012B1 (de) | 2012-06-20 | 2023-01-18 | Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. | Schichtsystem für dünnschichtsolarzellen |
ES2441428B1 (es) * | 2012-07-04 | 2016-02-05 | Abengoa Solar New Technologies, S.A. | Formulación de tintas con base de nanopartículas cerámicas |
JP2014049571A (ja) * | 2012-08-30 | 2014-03-17 | Toyota Central R&D Labs Inc | 光電素子 |
WO2014175451A1 (ja) * | 2013-04-26 | 2014-10-30 | コニカミノルタ株式会社 | 透明導電体、及び、電子デバイス |
EP2800144A1 (en) * | 2013-05-03 | 2014-11-05 | Saint-Gobain Glass France | Back contact substrate for a photovoltaic cell or module |
EP2800146A1 (en) | 2013-05-03 | 2014-11-05 | Saint-Gobain Glass France | Back contact substrate for a photovoltaic cell or module |
EP2800145B1 (en) * | 2013-05-03 | 2018-11-21 | Saint-Gobain Glass France | Back contact substrate for a photovoltaic cell or module |
CN105474371B (zh) | 2013-06-27 | 2018-03-27 | 蚌埠玻璃工业设计研究院 | 用于具有钠铟硫化物缓冲层的薄层太阳能电池的层系统 |
EP2871681A1 (en) | 2013-11-07 | 2015-05-13 | Saint-Gobain Glass France | Back contact substrate for a photovoltaic cell or module |
FR3013507B1 (fr) * | 2013-11-15 | 2015-11-20 | Saint Gobain | Substrat de contact arriere pour cellule photovoltaique |
CN103966565A (zh) * | 2013-12-13 | 2014-08-06 | 云南师范大学 | 一种用于彩色薄膜太阳电池表面涂层的制备方法 |
EP2887405A1 (de) | 2013-12-23 | 2015-06-24 | Saint-Gobain Glass France | Schichtsystem für Dünnschichtsolarzellen |
JP6673360B2 (ja) * | 2015-09-18 | 2020-03-25 | Agc株式会社 | 太陽電池用ガラス基板及び太陽電池 |
DE202015106923U1 (de) | 2015-12-18 | 2016-01-22 | Saint-Gobain Glass France | Elektronisch leitfähiges Substrat für Photovoltaikzellen |
FR3080221B1 (fr) * | 2018-04-11 | 2020-03-13 | Sunpartner Technologies | Optimisation du contact electrique metal/metal dans un dispositif photovoltaique semi-transparent en couches minces |
EP3627564A1 (de) | 2018-09-22 | 2020-03-25 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Verfahren zur nachbehandlung einer absorberschicht |
CN110970524A (zh) * | 2018-09-30 | 2020-04-07 | 北京铂阳顶荣光伏科技有限公司 | 太阳能电池及其制备方法 |
CN110028137B (zh) * | 2019-04-25 | 2021-11-30 | 郑州大学 | 一种去除水体低价离子和cod的电吸附材料及应用 |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3272986A (en) * | 1963-09-27 | 1966-09-13 | Honeywell Inc | Solar heat absorbers comprising alternate layers of metal and dielectric material |
US4612411A (en) * | 1985-06-04 | 1986-09-16 | Atlantic Richfield Company | Thin film solar cell with ZnO window layer |
JPS6220381A (ja) * | 1985-07-16 | 1987-01-28 | シーメンス ソーラー インダストリーズ,エル.ピー. | 二セレン化インジウム銅半導体膜の製造方法 |
US4798660A (en) * | 1985-07-16 | 1989-01-17 | Atlantic Richfield Company | Method for forming Cu In Se2 films |
JPS63242948A (ja) * | 1987-03-31 | 1988-10-07 | Asahi Glass Co Ltd | 熱線反射ガラス |
JPH0645483B2 (ja) * | 1988-01-06 | 1994-06-15 | 株式会社半導体エネルギー研究所 | 液晶表示装置用基板およびその作製方法 |
JP2587972B2 (ja) * | 1988-01-06 | 1997-03-05 | 株式会社半導体エネルギー研究所 | 薄膜構造 |
US5141564A (en) * | 1988-05-03 | 1992-08-25 | The Boeing Company | Mixed ternary heterojunction solar cell |
US4915745A (en) * | 1988-09-22 | 1990-04-10 | Atlantic Richfield Company | Thin film solar cell and method of making |
US5028274A (en) * | 1989-06-07 | 1991-07-02 | International Solar Electric Technology, Inc. | Group I-III-VI2 semiconductor films for solar cell application |
EP0460287A1 (de) * | 1990-05-31 | 1991-12-11 | Siemens Aktiengesellschaft | Neuartige Chalkopyrit-Solarzelle |
DE59009771D1 (de) * | 1990-07-24 | 1995-11-16 | Siemens Ag | Verfahren zur Herstellung einer Chalkopyrit-Solarzelle. |
SE468372B (sv) | 1991-04-24 | 1992-12-21 | Stiftelsen Im Inst Foer Mikroe | Foerfarande foer tillverkning av tunnfilmssolceller varvid deponering av skikt paa substrat sker i roterbar (cylindrisk) baeranordning |
JP3100692B2 (ja) * | 1991-08-19 | 2000-10-16 | 同和鉱業株式会社 | CuInSe2系光電変換素子の作製方法 |
JPH0563224A (ja) * | 1991-09-02 | 1993-03-12 | Fuji Electric Co Ltd | 薄膜太陽電池の製造方法 |
JPH05114749A (ja) * | 1991-10-23 | 1993-05-07 | Nikko Kyodo Co Ltd | 電子素子部材およびその製造方法 |
JPH05315633A (ja) * | 1992-05-01 | 1993-11-26 | Dowa Mining Co Ltd | CuInSe2 系薄膜太陽電池およびその製法 |
US5356839A (en) * | 1993-04-12 | 1994-10-18 | Midwest Research Institute | Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization |
US5477088A (en) * | 1993-05-12 | 1995-12-19 | Rockett; Angus A. | Multi-phase back contacts for CIS solar cells |
DE4333407C1 (de) * | 1993-09-30 | 1994-11-17 | Siemens Ag | Solarzelle mit einer Chalkopyritabsorberschicht |
CZ279603B6 (cs) * | 1993-11-03 | 1995-05-17 | Vysoká Škola Chemicko-Technologická | Křišťálové bezolovnaté sklo s indexem lomu vyšším než 1,52 |
US5962883A (en) * | 1994-03-23 | 1999-10-05 | Lucent Technologies Inc. | Article comprising an oxide layer on a GaAs-based semiconductor body |
DE4413215C2 (de) * | 1994-04-15 | 1996-03-14 | Siemens Solar Gmbh | Solarmodul mit Dünnschichtaufbau und Verfahren zu seiner Herstellung |
JPH08125206A (ja) * | 1994-10-27 | 1996-05-17 | Yazaki Corp | 薄膜太陽電池 |
DE4442824C1 (de) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
JPH08167728A (ja) * | 1994-12-14 | 1996-06-25 | Nippon Oil Co Ltd | 光起電力素子 |
JPH08293543A (ja) * | 1995-04-25 | 1996-11-05 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5772431A (en) * | 1995-05-22 | 1998-06-30 | Yazaki Corporation | Thin-film solar cell manufacturing apparatus and manufacturing method |
JPH0957892A (ja) * | 1995-08-24 | 1997-03-04 | Mitsui Toatsu Chem Inc | 透明導電性積層体 |
US5730852A (en) * | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
US5674555A (en) * | 1995-11-30 | 1997-10-07 | University Of Delaware | Process for preparing group Ib-IIIa-VIa semiconducting films |
KR100408499B1 (ko) * | 1996-06-17 | 2004-03-12 | 삼성전자주식회사 | 실리콘태양전지 |
JPH10135501A (ja) * | 1996-09-05 | 1998-05-22 | Yazaki Corp | 半導体装置及びその製造方法並びに太陽電池 |
JP2904167B2 (ja) * | 1996-12-18 | 1999-06-14 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH1144887A (ja) * | 1997-07-28 | 1999-02-16 | Toppan Printing Co Ltd | 表示装置用反射電極基板 |
JP2000012883A (ja) * | 1998-06-25 | 2000-01-14 | Yazaki Corp | 太陽電池の製造方法 |
JP2000091603A (ja) * | 1998-09-07 | 2000-03-31 | Honda Motor Co Ltd | 太陽電池 |
DE19958878B4 (de) * | 1999-12-07 | 2012-01-19 | Saint-Gobain Glass Deutschland Gmbh | Dünnschicht-Solarzelle |
NL1013900C2 (nl) * | 1999-12-21 | 2001-06-25 | Akzo Nobel Nv | Werkwijze voor de vervaardiging van een zonnecelfolie met in serie geschakelde zonnecellen. |
JP3705736B2 (ja) * | 2000-08-29 | 2005-10-12 | 株式会社リガク | 熱電気測定装置の試料組立体 |
US7087309B2 (en) * | 2003-08-22 | 2006-08-08 | Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) | Coated article with tin oxide, silicon nitride and/or zinc oxide under IR reflecting layer and corresponding method |
JP5048141B2 (ja) | 2010-07-08 | 2012-10-17 | 日本特殊陶業株式会社 | プラズマジェット点火プラグ |
-
2001
- 2001-01-31 FR FR0101292A patent/FR2820241B1/fr not_active Expired - Fee Related
-
2002
- 2002-01-23 EP EP11170585.1A patent/EP2369635B1/fr not_active Expired - Lifetime
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- 2002-01-23 EP EP11170586.9A patent/EP2369636A3/fr not_active Withdrawn
- 2002-01-23 WO PCT/FR2002/000274 patent/WO2002065554A1/fr active Application Filing
- 2002-01-23 EP EP11170584.4A patent/EP2369634A3/fr not_active Withdrawn
- 2002-01-23 CN CNB02805525XA patent/CN1327533C/zh not_active Expired - Lifetime
- 2002-01-23 MX MXPA03006682A patent/MXPA03006682A/es active IP Right Grant
-
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- 2010-03-10 JP JP2010053008A patent/JP5313948B2/ja not_active Expired - Fee Related
-
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- 2011-12-23 US US13/336,197 patent/US8809668B2/en not_active Expired - Fee Related
- 2011-12-23 US US13/336,143 patent/US20120186646A1/en not_active Abandoned
-
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- 2012-11-22 JP JP2012256761A patent/JP5592461B2/ja not_active Expired - Fee Related
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