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DE69940082D1 - Plasmaabscheidungsprozesse bei dielektrischen Filmen mit geringer Dielektrizitätskonstante - Google Patents

Plasmaabscheidungsprozesse bei dielektrischen Filmen mit geringer Dielektrizitätskonstante

Info

Publication number
DE69940082D1
DE69940082D1 DE69940082T DE69940082T DE69940082D1 DE 69940082 D1 DE69940082 D1 DE 69940082D1 DE 69940082 T DE69940082 T DE 69940082T DE 69940082 T DE69940082 T DE 69940082T DE 69940082 D1 DE69940082 D1 DE 69940082D1
Authority
DE
Germany
Prior art keywords
deposition processes
plasma deposition
dielectric constant
low dielectric
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69940082T
Other languages
English (en)
Inventor
David Cheung
Wai-Fan Yau
Robert P Mandal
Shin-Puu Jeng
Kuo-Wei Liu
Yung-Cheng Lu
Mike Barnes
Ralf B Willecke
Farhad Moghadam
Tetsuya Ishikawa
Tze Poon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/162,915 external-priority patent/US6287990B1/en
Priority claimed from US09/185,555 external-priority patent/US6303523B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69940082D1 publication Critical patent/DE69940082D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
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    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

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DE69940082T 1998-02-11 1999-02-10 Plasmaabscheidungsprozesse bei dielektrischen Filmen mit geringer Dielektrizitätskonstante Expired - Fee Related DE69940082D1 (de)

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US09/021,788 US6054379A (en) 1998-02-11 1998-02-11 Method of depositing a low k dielectric with organo silane
US09/114,682 US6072227A (en) 1998-02-11 1998-07-13 Low power method of depositing a low k dielectric with organo silane
US09/162,915 US6287990B1 (en) 1998-02-11 1998-09-29 CVD plasma assisted low dielectric constant films
US09/185,555 US6303523B2 (en) 1998-02-11 1998-11-04 Plasma processes for depositing low dielectric constant films

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US6054379A (en) 2000-04-25
US20040147109A1 (en) 2004-07-29
US6730593B2 (en) 2004-05-04
US7023092B2 (en) 2006-04-04
US20020000670A1 (en) 2002-01-03
JP5090430B2 (ja) 2012-12-05
US6511903B1 (en) 2003-01-28
US20030113992A1 (en) 2003-06-19
US6770556B2 (en) 2004-08-03
US20020111042A1 (en) 2002-08-15
US20080044557A1 (en) 2008-02-21
JP2010123972A (ja) 2010-06-03
US6072227A (en) 2000-06-06
US20080061439A1 (en) 2008-03-13
US6511909B1 (en) 2003-01-28
US20050156317A1 (en) 2005-07-21
US7651725B2 (en) 2010-01-26
US20040201103A1 (en) 2004-10-14
US20080064225A1 (en) 2008-03-13

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