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DE69929771D1 - Plasmaabscheidungsprozess von dielektrischen filmen mit geringer dielektrizitätskonstante - Google Patents

Plasmaabscheidungsprozess von dielektrischen filmen mit geringer dielektrizitätskonstante

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Publication number
DE69929771D1
DE69929771D1 DE69929771T DE69929771T DE69929771D1 DE 69929771 D1 DE69929771 D1 DE 69929771D1 DE 69929771 T DE69929771 T DE 69929771T DE 69929771 T DE69929771 T DE 69929771T DE 69929771 D1 DE69929771 D1 DE 69929771D1
Authority
DE
Germany
Prior art keywords
deposition process
plasma deposition
dielectric constant
low dielectric
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69929771T
Other languages
English (en)
Other versions
DE69929771T2 (de
Inventor
David Cheung
Wai-Fan Yau
P Mandal
Shin-Puu Jeng
Kuo-Wei Liu
Yung-Cheng Lu
Mike Barnes
B Willecke
Farhad Moghadam
Tetsuya Ishikawa
Tze Poon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/021,788 external-priority patent/US6054379A/en
Priority claimed from US09/162,915 external-priority patent/US6287990B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69929771D1 publication Critical patent/DE69929771D1/de
Application granted granted Critical
Publication of DE69929771T2 publication Critical patent/DE69929771T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
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US09/114,682 US6072227A (en) 1998-02-11 1998-07-13 Low power method of depositing a low k dielectric with organo silane
US09/162,915 US6287990B1 (en) 1998-02-11 1998-09-29 CVD plasma assisted low dielectric constant films
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US09/185,555 US6303523B2 (en) 1998-02-11 1998-11-04 Plasma processes for depositing low dielectric constant films
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US6348725B2 (en) 2002-02-19
US20030064610A1 (en) 2003-04-03
US20010005546A1 (en) 2001-06-28
US20040082199A1 (en) 2004-04-29
US6303523B2 (en) 2001-10-16
JP4447772B2 (ja) 2010-04-07
WO1999041423A2 (en) 1999-08-19
US20010004479A1 (en) 2001-06-21
US6562690B1 (en) 2003-05-13
WO1999041423A3 (en) 1999-10-28
US6541282B1 (en) 2003-04-01
US7560377B2 (en) 2009-07-14
JP2002503879A (ja) 2002-02-05
US6869896B2 (en) 2005-03-22
TW408369B (en) 2000-10-11
US6734115B2 (en) 2004-05-11
EP1055012A2 (de) 2000-11-29
US6596655B1 (en) 2003-07-22
EP1055012B1 (de) 2006-02-08
DE69929771T2 (de) 2006-10-12
US20050191846A1 (en) 2005-09-01

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