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DE69916177D1 - Verfahren zur Herstellung eines Siliziumkarbid-Einkristalls - Google Patents

Verfahren zur Herstellung eines Siliziumkarbid-Einkristalls

Info

Publication number
DE69916177D1
DE69916177D1 DE69916177T DE69916177T DE69916177D1 DE 69916177 D1 DE69916177 D1 DE 69916177D1 DE 69916177 T DE69916177 T DE 69916177T DE 69916177 T DE69916177 T DE 69916177T DE 69916177 D1 DE69916177 D1 DE 69916177D1
Authority
DE
Germany
Prior art keywords
producing
single crystal
silicon carbide
carbide single
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69916177T
Other languages
English (en)
Other versions
DE69916177T2 (de
Inventor
Atsuto Okamoto
Naohiro Sugiyama
Toshihiko Tani
Nobuo Kamiya
Hiroaki Wakayama
Yoshiaki Fukushima
Kazukuni Hara
Fusao Hirose
Shoichi Onda
Kunihiko Hara
Takashi Onoda
Haruyoshi Kuriyama
Takeshi Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP20369798A external-priority patent/JP4103184B2/ja
Priority claimed from JP20369698A external-priority patent/JP4103183B2/ja
Priority claimed from JP22109998A external-priority patent/JP4069508B2/ja
Application filed by Denso Corp filed Critical Denso Corp
Application granted granted Critical
Publication of DE69916177D1 publication Critical patent/DE69916177D1/de
Publication of DE69916177T2 publication Critical patent/DE69916177T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69916177T 1998-05-29 1999-05-26 Verfahren zur Herstellung eines Siliziumkarbid-Einkristalls Expired - Lifetime DE69916177T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP14991298 1998-05-29
JP14991298 1998-05-29
JP20369698 1998-07-17
JP20369798A JP4103184B2 (ja) 1998-07-17 1998-07-17 炭化珪素単結晶の製造方法
JP20369798 1998-07-17
JP20369698A JP4103183B2 (ja) 1998-07-17 1998-07-17 炭化珪素単結晶の製造方法
JP22109998 1998-07-21
JP22109998A JP4069508B2 (ja) 1998-07-21 1998-07-21 炭化珪素単結晶の製造方法

Publications (2)

Publication Number Publication Date
DE69916177D1 true DE69916177D1 (de) 2004-05-13
DE69916177T2 DE69916177T2 (de) 2005-04-14

Family

ID=27472983

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69916177T Expired - Lifetime DE69916177T2 (de) 1998-05-29 1999-05-26 Verfahren zur Herstellung eines Siliziumkarbid-Einkristalls

Country Status (3)

Country Link
US (1) US6214108B1 (de)
EP (1) EP0967304B1 (de)
DE (1) DE69916177T2 (de)

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DE19917601A1 (de) * 1998-07-14 2000-01-20 Siemens Ag Vorrichtung und Verfahren zur Herstellung mindestens eines SiC-Einkristalls
JP3248071B2 (ja) * 1998-10-08 2002-01-21 日本ピラー工業株式会社 単結晶ＳｉＣ
US6534026B2 (en) * 2000-02-15 2003-03-18 The Fox Group, Inc. Low defect density silicon carbide
US6448581B1 (en) * 2000-08-08 2002-09-10 Agere Systems Guardian Corp. Mitigation of deleterious effects of micropipes in silicon carbide devices
JP4716558B2 (ja) * 2000-12-12 2011-07-06 株式会社デンソー 炭化珪素基板
JP3988018B2 (ja) * 2001-01-18 2007-10-10 ソニー株式会社 結晶膜、結晶基板および半導体装置
US7527869B2 (en) 2001-06-04 2009-05-05 Kwansei Gakuin Educational Foundation Single crystal silicon carbide and method for producing the same
ATE546569T1 (de) * 2002-03-19 2012-03-15 Central Res Inst Elect Verfahren zur herstellung von sic-kristall
EP1498518B1 (de) * 2002-04-15 2008-10-29 Sumitomo Metal Industries, Ltd. Verfahren zur herstellung eines siliciumcarbid-einkristalles
US7520930B2 (en) 2002-04-15 2009-04-21 Sumitomo Metal Industries, Ltd. Silicon carbide single crystal and a method for its production
US7175704B2 (en) * 2002-06-27 2007-02-13 Diamond Innovations, Inc. Method for reducing defect concentrations in crystals
US20040134418A1 (en) * 2002-11-08 2004-07-15 Taisuke Hirooka SiC substrate and method of manufacturing the same
JP4150642B2 (ja) * 2003-08-04 2008-09-17 株式会社デンソー 単結晶の成長方法および成長装置
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
US7314520B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
DE102004048454B4 (de) * 2004-10-05 2008-02-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen
JP4293165B2 (ja) * 2005-06-23 2009-07-08 住友電気工業株式会社 炭化ケイ素基板の表面再構成方法
US7371282B2 (en) * 2006-07-12 2008-05-13 Northrop Grumman Corporation Solid solution wide bandgap semiconductor materials
EP2133906A4 (de) * 2007-04-05 2011-11-02 Sumitomo Electric Industries Halbleiterbauelement und verfahren zu seiner herstellung
US20100147835A1 (en) * 2008-05-09 2010-06-17 Mulpuri Rao V Doped Gallium Nitride Annealing
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
JP5693946B2 (ja) * 2010-03-29 2015-04-01 エア・ウォーター株式会社 単結晶３Ｃ−ＳｉＣ基板の製造方法
JP2011246315A (ja) * 2010-05-28 2011-12-08 Sumitomo Electric Ind Ltd 炭化珪素基板およびその製造方法
JP2011254051A (ja) * 2010-06-04 2011-12-15 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
JP5447206B2 (ja) * 2010-06-15 2014-03-19 住友電気工業株式会社 炭化珪素単結晶の製造方法および炭化珪素基板
JP5793816B2 (ja) 2010-12-24 2015-10-14 東洋炭素株式会社 単結晶炭化ケイ素液相エピタキシャル成長用シード材及び単結晶炭化ケイ素の液相エピタキシャル成長方法
CN103270201B (zh) 2010-12-24 2016-02-10 东洋炭素株式会社 单晶碳化硅液相外延生长用种晶件和单晶碳化硅的液相外延生长方法
US9252206B2 (en) 2010-12-24 2016-02-02 Toyo Tanso Co., Ltd. Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
JP2012201543A (ja) * 2011-03-25 2012-10-22 Sumitomo Electric Ind Ltd 炭化珪素基板
JP2013060328A (ja) * 2011-09-14 2013-04-04 Sumitomo Electric Ind Ltd 炭化珪素結晶の製造方法
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
CN103088294B (zh) * 2013-01-11 2015-03-04 河南科技大学 一种表面具有凸起的二氧化钛薄膜的制备方法
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) * 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP6500342B2 (ja) 2013-04-27 2019-04-17 日亜化学工業株式会社 半導体レーザ装置の製造方法並びにサブマウントの製造方法
US10403509B2 (en) * 2014-04-04 2019-09-03 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6341056B2 (ja) * 2014-10-24 2018-06-13 日亜化学工業株式会社 サブマウント及びその製造方法並びに半導体レーザ装置及びその製造方法
CN105002563B (zh) * 2015-08-11 2017-10-24 中国科学院半导体研究所 碳化硅外延层区域掺杂的方法
US10793972B1 (en) 2017-07-11 2020-10-06 Ii-Vi Delaware, Inc. High quality silicon carbide crystals and method of making the same
US11049717B2 (en) * 2018-12-21 2021-06-29 National Chung-Shan Institute Of Science And Technology Method for fabricating ultra-thin graphite film on silicon carbide substrate from siloxane-coupling-group-containing polyamic acid solution
CN111362701B (zh) * 2018-12-25 2022-01-07 比亚迪股份有限公司 一种碳化硅晶块的制备装置、碳化硅晶块及其制备方法
US12065758B2 (en) * 2019-03-05 2024-08-20 Kwansei Gakuin Educational Foundation Method for manufacturing a SiC substrate by simultaneously forming a growth layer on one surface and etching another surface of a SiC base substrate
TWI698397B (zh) * 2019-11-11 2020-07-11 財團法人工業技術研究院 碳化矽粉體的純化方法
CN111793825B (zh) * 2020-07-27 2023-06-20 河北同光科技发展有限公司 一种低缺陷密度SiC单晶的制备装置及方法
CN113652749B (zh) * 2021-08-18 2022-07-12 山东天岳先进科技股份有限公司 一种小角晶界少的碳化硅晶体、衬底及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2804860B2 (ja) 1991-04-18 1998-09-30 新日本製鐵株式会社 ＳｉＣ単結晶およびその成長方法
US5958132A (en) * 1991-04-18 1999-09-28 Nippon Steel Corporation SiC single crystal and method for growth thereof
JPH0526599A (ja) * 1991-07-23 1993-02-02 Nec Corp 誘導装置
US5679153A (en) * 1994-11-30 1997-10-21 Cree Research, Inc. Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
JPH09157092A (ja) * 1995-12-13 1997-06-17 Nippon Steel Corp 単結晶炭化珪素の製造方法
JPH09268096A (ja) 1996-03-29 1997-10-14 Toyota Central Res & Dev Lab Inc 単結晶の製造方法及び種結晶
JP3296998B2 (ja) 1997-05-23 2002-07-02 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
EP0922792A4 (de) * 1997-06-27 2000-08-16 Nippon Pillar Packing SiC-EINKRISTALL UND VERFAHREN ZU DESSEN HERSTELLUNG

Also Published As

Publication number Publication date
EP0967304B1 (de) 2004-04-07
DE69916177T2 (de) 2005-04-14
EP0967304A1 (de) 1999-12-29
US6214108B1 (en) 2001-04-10

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN

8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition