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DE60041429D1 - Verfahren zur herstellung von silicium einkristallen - Google Patents

Verfahren zur herstellung von silicium einkristallen

Info

Publication number
DE60041429D1
DE60041429D1 DE60041429T DE60041429T DE60041429D1 DE 60041429 D1 DE60041429 D1 DE 60041429D1 DE 60041429 T DE60041429 T DE 60041429T DE 60041429 T DE60041429 T DE 60041429T DE 60041429 D1 DE60041429 D1 DE 60041429D1
Authority
DE
Germany
Prior art keywords
silicon single
single crystals
producing silicon
producing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60041429T
Other languages
English (en)
Inventor
Kirio Itoi
Eiichi Iino
T Ishizuka
Tomohiko Ohta
I Fusegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11071208A external-priority patent/JP2000264785A/ja
Priority claimed from JP07120599A external-priority patent/JP3589077B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE60041429D1 publication Critical patent/DE60041429D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60041429T 1999-03-17 2000-03-06 Verfahren zur herstellung von silicium einkristallen Expired - Lifetime DE60041429D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11071208A JP2000264785A (ja) 1999-03-17 1999-03-17 シリコン単結晶の製造方法およびその製造装置
JP07120599A JP3589077B2 (ja) 1999-03-17 1999-03-17 シリコン単結晶の製造方法ならびにこの方法で製造された単結晶およびシリコンウエーハ
PCT/JP2000/001337 WO2000055393A1 (fr) 1999-03-17 2000-03-06 Appareil et procede de production d'un cristal unique de silicium, cristal unique et tranche obtenus selon ce procede

Publications (1)

Publication Number Publication Date
DE60041429D1 true DE60041429D1 (de) 2009-03-12

Family

ID=26412316

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60041429T Expired - Lifetime DE60041429D1 (de) 1999-03-17 2000-03-06 Verfahren zur herstellung von silicium einkristallen

Country Status (6)

Country Link
US (1) US6423285B1 (de)
EP (1) EP1087040B1 (de)
KR (1) KR100818677B1 (de)
DE (1) DE60041429D1 (de)
TW (1) TW463224B (de)
WO (1) WO2000055393A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6663709B2 (en) * 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
JP2004051475A (ja) * 2002-05-31 2004-02-19 Toshiba Corp 単結晶引上げ装置、超電導磁石および単結晶引上げ方法
KR100680242B1 (ko) 2004-12-29 2007-02-07 주식회사 실트론 실리콘 단결정의 성장 방법
KR100827028B1 (ko) * 2006-10-17 2008-05-02 주식회사 실트론 쵸크랄스키법을 이용한 반도체 단결정 제조 방법, 및 이방법에 의해 제조된 반도체 단결정 잉곳 및 웨이퍼
KR100906284B1 (ko) * 2007-11-02 2009-07-06 주식회사 실트론 산소농도 특성이 개선된 반도체 단결정의 제조방법
KR100954291B1 (ko) 2008-01-21 2010-04-26 주식회사 실트론 고품질의 반도체 단결정 잉곳 제조장치 및 방법
CN101514478B (zh) * 2008-12-30 2011-08-03 宁波大学 磁场干预条件下配合物小晶体合成实验研究装置
ATE539182T1 (de) 2009-05-13 2012-01-15 Siltronic Ag Verfahren und vorrichtung zur züchtung eines siliciumeinzelkristalls durch schmelzung
KR101331759B1 (ko) * 2011-03-22 2013-11-20 주식회사 엘지실트론 실리콘 단결정 잉곳 제조 장치 및 그 제조 방법
US9482583B1 (en) * 2011-10-06 2016-11-01 Esolar, Inc. Automated heliostat reflectivity measurement system
CN103060902B (zh) * 2013-01-10 2016-04-27 上海大学 直接成形制备带硅的方法及硅片直接成形装置
JP6583142B2 (ja) * 2016-05-25 2019-10-02 株式会社Sumco シリコン単結晶の製造方法及び装置
US9988740B1 (en) 2016-08-16 2018-06-05 Northrop Grumman Systems Corporation Shaped induction field crystal printer
CN106567125A (zh) * 2016-11-22 2017-04-19 新余学院 一种改善冶金法多晶硅生长界面的方法
JP6930458B2 (ja) * 2018-02-28 2021-09-01 株式会社Sumco シリコン融液の対流パターン推定方法、シリコン単結晶の酸素濃度推定方法、シリコン単結晶の製造方法、および、シリコン単結晶の引き上げ装置
EP3800282A4 (de) 2018-11-26 2022-04-06 Longi Green Energy Technology Co., Ltd. Verfahren, einrichtung und vorrichtung zur detektion des kristallzüchtungszustands für siliciumstab
CN112444516B (zh) * 2019-08-13 2022-03-11 隆基绿能科技股份有限公司 一种硅棒的晶线生长状态检测方法、装置及设备
CN111971424B (zh) * 2019-02-27 2022-04-29 胜高股份有限公司 硅熔液的对流模式控制方法及单晶硅的制造方法
CN110512278A (zh) * 2019-09-12 2019-11-29 西安奕斯伟硅片技术有限公司 一种拉晶装置、设备及方法
US11873574B2 (en) 2019-12-13 2024-01-16 Globalwafers Co., Ltd. Systems and methods for production of silicon using a horizontal magnetic field

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144797A (ja) * 1984-08-10 1986-03-04 Toshiba Corp 単結晶育成装置およびその制御方法
JP2556966B2 (ja) 1986-04-30 1996-11-27 東芝セラミツクス株式会社 単結晶の育成装置
GB8805478D0 (en) * 1988-03-08 1988-04-07 Secr Defence Method & apparatus for growing semi-conductor crystalline materials
JPH0431386A (ja) * 1990-05-25 1992-02-03 Shin Etsu Handotai Co Ltd 半導体単結晶引上方法
US5178720A (en) * 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates
JP2827833B2 (ja) * 1993-08-26 1998-11-25 日本電気株式会社 単結晶育成法
JP2940437B2 (ja) * 1995-06-01 1999-08-25 信越半導体株式会社 単結晶の製造方法及び装置
JP3528888B2 (ja) * 1995-12-28 2004-05-24 信越半導体株式会社 シリコン単結晶の製造装置および方法
JP3520883B2 (ja) * 1995-12-29 2004-04-19 信越半導体株式会社 単結晶の製造方法
US5676751A (en) * 1996-01-22 1997-10-14 Memc Electronic Materials, Inc. Rapid cooling of CZ silicon crystal growth system

Also Published As

Publication number Publication date
EP1087040A1 (de) 2001-03-28
US6423285B1 (en) 2002-07-23
EP1087040A4 (de) 2006-08-09
WO2000055393A1 (fr) 2000-09-21
EP1087040B1 (de) 2009-01-21
KR20010034851A (ko) 2001-04-25
TW463224B (en) 2001-11-11
KR100818677B1 (ko) 2008-04-01

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