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DE602004018603D1 - Photoelektrische Umwandlungsvorrichtung und Bildaufnahmesystem - Google Patents

Photoelektrische Umwandlungsvorrichtung und Bildaufnahmesystem

Info

Publication number
DE602004018603D1
DE602004018603D1 DE602004018603T DE602004018603T DE602004018603D1 DE 602004018603 D1 DE602004018603 D1 DE 602004018603D1 DE 602004018603 T DE602004018603 T DE 602004018603T DE 602004018603 T DE602004018603 T DE 602004018603T DE 602004018603 D1 DE602004018603 D1 DE 602004018603D1
Authority
DE
Germany
Prior art keywords
impurity region
impurity
concentration
photoelectric conversion
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004018603T
Other languages
English (en)
Inventor
Hiroshi Yuzurihara
Ryuichi Mishima
Takanori Watanabe
Takeshi Ichikawa
Seiichi Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004252310A external-priority patent/JP4612818B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE602004018603D1 publication Critical patent/DE602004018603D1/de
Anticipated expiration legal-status Critical
Active legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE602004018603T 2003-12-12 2004-12-09 Photoelektrische Umwandlungsvorrichtung und Bildaufnahmesystem Active DE602004018603D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003415011 2003-12-12
JP2004252310A JP4612818B2 (ja) 2004-08-31 2004-08-31 固体撮像素子、固体撮像装置及び撮像システム

Publications (1)

Publication Number Publication Date
DE602004018603D1 true DE602004018603D1 (de) 2009-02-05

Family

ID=34525512

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004018603T Active DE602004018603D1 (de) 2003-12-12 2004-12-09 Photoelektrische Umwandlungsvorrichtung und Bildaufnahmesystem

Country Status (6)

Country Link
US (5) US7323731B2 (de)
EP (1) EP1542286B1 (de)
KR (1) KR100615542B1 (de)
CN (1) CN100438049C (de)
AT (1) ATE418792T1 (de)
DE (1) DE602004018603D1 (de)

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JP5546222B2 (ja) * 2009-12-04 2014-07-09 キヤノン株式会社 固体撮像装置及び製造方法
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JP5697371B2 (ja) * 2010-07-07 2015-04-08 キヤノン株式会社 固体撮像装置および撮像システム
JP2013016675A (ja) * 2011-07-05 2013-01-24 Sony Corp 固体撮像装置、電子機器、及び、固体撮像装置の製造方法
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JP5959877B2 (ja) * 2012-02-17 2016-08-02 キヤノン株式会社 撮像装置
JP2015023250A (ja) * 2013-07-23 2015-02-02 ソニー株式会社 固体撮像素子及びその駆動方法、並びに電子機器
JP2015046454A (ja) * 2013-08-28 2015-03-12 キヤノン株式会社 半導体装置の製造方法および半導体装置
JP6355311B2 (ja) 2013-10-07 2018-07-11 キヤノン株式会社 固体撮像装置、その製造方法及び撮像システム
KR102301778B1 (ko) * 2014-08-28 2021-09-13 삼성전자주식회사 이미지 센서, 및 상기 이미지 센서의 픽셀
JP6541361B2 (ja) 2015-02-05 2019-07-10 キヤノン株式会社 固体撮像装置
JP2016164977A (ja) * 2015-02-27 2016-09-08 キヤノン株式会社 ナノインプリント用液体材料、ナノインプリント用液体材料の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、および電子部品の製造方法
EP3113224B1 (de) * 2015-06-12 2020-07-08 Canon Kabushiki Kaisha Abbildungsvorrichtung, verfahren zur herstellung davon und kamera
JP6862129B2 (ja) * 2016-08-29 2021-04-21 キヤノン株式会社 光電変換装置および撮像システム
JP2019102494A (ja) * 2017-11-28 2019-06-24 キヤノン株式会社 光電変換装置およびその製造方法、機器
CN114222080B (zh) * 2021-12-15 2024-07-16 上海韦尔半导体股份有限公司 一种高动态像素结构

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Also Published As

Publication number Publication date
US7473948B2 (en) 2009-01-06
KR100615542B1 (ko) 2006-08-29
US20050127415A1 (en) 2005-06-16
US20090085144A1 (en) 2009-04-02
CN1627524A (zh) 2005-06-15
ATE418792T1 (de) 2009-01-15
US20110163407A1 (en) 2011-07-07
US7928486B2 (en) 2011-04-19
US20080073737A1 (en) 2008-03-27
KR20050058977A (ko) 2005-06-17
US20100096676A1 (en) 2010-04-22
EP1542286B1 (de) 2008-12-24
CN100438049C (zh) 2008-11-26
EP1542286A2 (de) 2005-06-15
US7323731B2 (en) 2008-01-29
US7679116B2 (en) 2010-03-16
EP1542286A3 (de) 2006-03-08

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