CN111276414A - Detection method and device - Google Patents
Detection method and device Download PDFInfo
- Publication number
- CN111276414A CN111276414A CN202010078965.8A CN202010078965A CN111276414A CN 111276414 A CN111276414 A CN 111276414A CN 202010078965 A CN202010078965 A CN 202010078965A CN 111276414 A CN111276414 A CN 111276414A
- Authority
- CN
- China
- Prior art keywords
- film
- thickness
- spectrum
- film layer
- measured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
The embodiment of the application discloses a detection method and a device, which can measure historical film layers with different thicknesses by optical line width measuring equipment in advance to obtain the corresponding relation between the spectrum and the film layer thickness, the historical film layer and the film layer to be measured are made of the same material, so that the corresponding relation between the spectrum of the historical film layer and the thickness of the film layer is consistent with that of the film layer to be measured, after the film layer to be measured is measured by the optical line width measuring equipment to obtain a measuring spectrum, the corresponding measuring thickness of the measuring spectrum can be determined by utilizing the corresponding relation between the spectrum and the film layer thickness which is established in advance as the thickness of the film layer to be measured, so that the accuracy of detecting the thickness of the film layer to be measured is improved, and during the test, the film layer to be measured is measured by the optical line width measuring equipment, the thickness of the film layer to be measured can be obtained by processing the measurement spectrum, so that the operation difficulty is reduced, and the calculated amount is reduced.
Description
Technical Field
The present disclosure relates to the field of semiconductor device manufacturing, and more particularly, to a method and an apparatus for detecting a defect.
Background
In the semiconductor device manufacturing process, the sizes of some of the film layers can be detected to accurately control the sizes of the film layers, so that the device manufacturing precision is improved, for example, in the 3D NAND memory manufacturing process, the thickness of the metal wire layer on the upper layer of the 3D NAND memory can be detected to ensure the normal function of the metal wire layer, and thus the electrical performance of the 3D NAND memory is improved.
At present, there is no method for directly detecting the size of a film layer to be detected in a semiconductor device, but a reference film layer is formed while the film layer to be detected is formed, and the reference film layer is processed while the film layer to be detected is processed, so that the film layer to be detected and the reference film layer have the same thickness, and the thickness of the film layer to be detected can be detected by detecting the thickness of the reference film layer. However, with the complicated structure of the semiconductor device, the substrate forming the film to be measured and the substrate forming the reference film have different shapes and sizes, so that a Loading effect (Loading effect) is increased, that is, there is no stable correlation between the thickness of the film to be measured and the thickness of the reference film, and thus, the thickness of the film to be measured cannot be truly reflected through the thickness detection of the reference film.
How to accurately measure the thickness of a film layer to be measured is an important problem in the field of semiconductor device preparation.
Disclosure of Invention
In view of this, the embodiments of the present application provide a detection method and device, which improve the size detection efficiency and accuracy of a film layer to be detected.
The embodiment of the application provides a detection method, which comprises the following steps:
measuring the film layer to be measured by using optical line width measuring equipment to obtain a measuring spectrum;
determining the measurement thickness corresponding to the measurement spectrum as the thickness of the film to be measured by utilizing the corresponding relation between the pre-established spectrum and the film thickness; the pre-established corresponding relation between the spectrum and the film thickness is obtained by measuring historical films with different thicknesses by the optical line width measuring equipment, and the historical films and the film to be measured are made of the same material.
Optionally, the determining the measurement thickness corresponding to the measurement spectrum by using the pre-established correspondence between the spectrum and the film thickness includes:
determining the measurement thickness corresponding to the measurement spectrum by using a machine learning model obtained by pre-training; the machine learning model is obtained by training based on the corresponding relation between the spectrum and the film thickness.
Optionally, the machine learning model includes: a neural network model.
Optionally, the thickness of the historical film layer is obtained by measuring the historical film layer by using a metal pulse machine; and the corresponding relation between the spectrum and the film thickness is obtained by measuring the same position of the historical film through the optical line width measuring equipment and the metal pulse machine.
Optionally, before the metal pulse machine is used to measure the historical film layer to obtain the thickness of the historical film layer, the detection method further includes:
measuring the calibration film layer by using a metal pulse machine to obtain a first result;
measuring the calibration film layer by using a transmission electron microscope to obtain a second result;
and calibrating the metal pulse machine according to the first result and the second result.
Optionally, the film layer to be tested is a metal layer located on the top layer in the semiconductor device.
Optionally, the number of the history film layers is multiple, and at least one history film layer is a metal layer located on a top layer in a device having the same structure as the semiconductor device.
Optionally, the metal layer is made of copper.
An embodiment of the present application further provides a detection apparatus, including:
the optical line width measuring equipment is used for measuring the film layer to be measured to obtain a measuring spectrum; measuring historical film layers with different thicknesses to pre-establish a corresponding relation between a spectrum and the film layer thickness, wherein the historical film layers and the film layers to be measured are made of the same material;
and the detection control equipment is used for determining the measurement thickness corresponding to the measurement spectrum as the thickness of the film to be measured by utilizing the pre-established corresponding relation between the spectrum and the film thickness.
Optionally, the detection control device is specifically configured to:
determining the measurement thickness corresponding to the measurement spectrum by using a machine learning model obtained by pre-training; the machine learning model is obtained by training based on the corresponding relation between the spectrum and the film thickness.
Optionally, the machine learning model includes: a neural network model.
Optionally, the detection device further includes:
the metal pulse machine is used for measuring the historical film layer to obtain the thickness of the historical film layer; and the corresponding relation between the spectrum and the film thickness is obtained by measuring the same position of the historical film through the optical line width measuring equipment and the metal pulse machine.
Optionally, the detection device further includes:
the transmission electron microscope is used for measuring the calibration film layer to obtain a second result;
the metal pulse machine is also used for measuring the calibration film layer to obtain a first result;
the control equipment is further used for calibrating the metal pulse machine according to the first result and the second result.
The embodiment of the application provides a detection method and a detection device, which can utilize optical line width measurement equipment to measure historical film layers with different thicknesses in advance to obtain the corresponding relation between a spectrum and the thickness of the film layers, wherein the historical film layers are made of the same material as the film layers to be measured, so that the corresponding relation between the spectrum of the historical film layers and the thickness of the film layers is consistent with that of the film layers to be measured, and thus, after the film layers to be measured are measured by the optical line width measurement equipment to obtain a measurement spectrum, the corresponding measurement thickness corresponding to the measurement spectrum can be determined by utilizing the preset corresponding relation between the spectrum and the thickness of the film layers to be measured, and the measurement thickness. That is to say, in this application embodiment, the corresponding relation of utilizing spectrum and rete thickness can realize going to detect the thickness of rete to be measured, compare in the mode that only obtains the thickness of rete to be measured through the thickness of the reference rete that utilizes the same technology to form simultaneously, the corresponding relation of spectrum and rete thickness is gathered in earlier stage in this application embodiment, the thickness of the rete to be measured that finally obtains like this corresponds with the spectrum of the rete to be measured, consequently, improved the accuracy that detects the thickness of the rete to be measured, and during the test, as long as utilize optical line width measuring equipment to measure the rete to be measured, can obtain the thickness of the rete to be measured through handling the measurement spectrum, the operation degree of difficulty has been reduced and the calculated amount has been reduced.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of a detection method provided in an embodiment of the present application;
FIG. 2 is a schematic diagram of a 3D NAND device according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a history layer according to an embodiment of the present disclosure;
fig. 4 is a block diagram of a detection apparatus according to an embodiment of the present application.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
Next, the present invention will be described in detail with reference to the drawings, wherein the cross-sectional views illustrating the structure of the device are not enlarged partially according to the general scale for convenience of illustration when describing the embodiments of the present invention, and the drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
At present, in a semiconductor device manufacturing process, the sizes of some of the film layers can be detected to accurately control the sizes of the film layers, so that the precision of device manufacturing is improved, for example, in the manufacturing process of a 3D NAND memory, the thickness of the metal wire layer on the upper layer of the 3D NAND memory can be detected, the normal function of the metal wire layer is ensured, and the electrical performance of the 3D NAND memory is ensured.
At present, there is no method for directly detecting the size of a film layer to be detected in a semiconductor device, but a reference film layer is formed while the film layer to be detected is formed, and the reference film layer is processed while the film layer to be detected is processed, so that the film layer to be detected and the reference film layer have the same thickness or the thicknesses of the film layer to be detected and the reference film layer have strong correlation, and therefore, the thickness of the film layer to be detected can be detected by performing thickness detection of the reference film layer. For example, the film to be tested may be a metal layer located on an upper layer of the semiconductor device, the film to be tested may be located in a Main Chip (Main Chip) region on the wafer, and the reference film may be a detection PAD (Monitor PAD) located on a scribe line on the wafer, and when the film to be tested is operated, the reference film is operated at the same time.
The method for detecting the thickness of the reference film may include an Optical Critical Dimension (OCD) measurement method using an Optical line width measurement device or a metal pulse method using a metal pulse device. The optical line width measuring equipment can emit detection light to the reference film layer, the detection light is reflected at the interface of the reference film layer, of course, the detection light is also reflected at the interface of other film layers below the reference film layer, and interference action occurs between the reflection lights to cause intensity change, so that the interference condition of the reflection lights can be obtained by receiving the reflection lights, modeling is performed on the basis of the reference film layer and the film layers below the reference film layer, and the intensity of each wavelength of the received reflection lights is analyzed, so that the thickness of the reference film layer is obtained; the metal pulse device can emit pumping waves to the reference film layer, the pumping waves are emitted and reflected at the interface of the reference film layer and the film layer below the reference film layer, and the thickness of the reference film layer can be calculated according to the peak value of the pumping waves and the propagation speed of the pumping waves in the reference film layer through the intensity of the received pumping waves at different time points.
However, with the complicated structure of the semiconductor device, the semiconductor device forming the film to be measured and the substrate forming the reference film are different in shape and size, so that the film to be measured and the reference film do not necessarily have the same thickness in the formation process, and the film to be measured and the reference film do not necessarily have the same processing effect in the processing process of the film to be measured and the reference film, so that there is no stable correlation between the thickness of the film to be measured and the thickness of the reference film, and at this time, the thickness of the film to be measured cannot be truly reflected through the detection of the reference film.
Meanwhile, these methods for detecting the thickness of the reference film cannot be directly applied to the detection of the film to be detected, because the detection light in the OCD method penetrates through the film to be detected and reaches the film thereunder, so that a geometric model of the semiconductor device including the film to be detected needs to be established during data processing, and when the structure of the semiconductor device is complicated and various, a huge workload is required for the modeling process. Although the metal pulse method is less affected by other films below the film to be tested, the pump wave emitted by the metal pulse machine has higher energy, which is easy to damage (burn) the film to be tested, and affects the structural integrity of the film to be tested, thereby affecting the performance and even the yield of the device.
In order to solve the above technical problems, embodiments of the present application provide a detection method and apparatus, which may use an optical line width measurement device to measure historical film layers with different thicknesses in advance to obtain a corresponding relationship between a spectrum and a film layer thickness, where the historical film layer and the film layer to be measured are made of the same material, and thus the corresponding relationship between the spectrum and the film layer thickness of the historical film layer is consistent with that of the film layer to be measured, so that after the film layer to be measured is measured by the optical line width measurement device to obtain a measurement spectrum, the measurement thickness corresponding to the measurement spectrum may be determined as the thickness of the film layer to be measured by using the corresponding relationship between the spectrum and the film layer thickness that is established in advance. That is to say, in this application embodiment, the corresponding relation of utilizing spectrum and rete thickness can realize going to detect the thickness of rete to be measured, compare in the mode that only obtains the thickness of rete to be measured through the thickness of the reference rete that utilizes the same technology to form simultaneously, the corresponding relation of spectrum and rete thickness is gathered in earlier stage in this application embodiment, the thickness of the rete to be measured that finally obtains like this corresponds with the spectrum of the rete to be measured, consequently, improved the accuracy that detects the thickness of the rete to be measured, and during the test, as long as utilize optical line width measuring equipment to measure the rete to be measured, can obtain the thickness of the rete to be measured through handling the measurement spectrum, the operation degree of difficulty has been reduced and the calculated amount has been reduced.
For a better understanding of the technical solutions and effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1, a flowchart of a detection method provided in an embodiment of the present application is shown, where the method includes the following steps:
s101, measuring the film layer to be measured by using optical line width measuring equipment to obtain a measuring spectrum.
In this embodiment, the film layer to be measured may be a film layer whose thickness needs to be measured, may be a film layer in a semiconductor device, and may also be another film layer. The film layer to be tested may be, for example, a metal layer located at a top layer in the semiconductor device, the metal layer may be used for forming a conductive metal line in a back end of line (BEOL) of the semiconductor device, and a material of the metal layer may be Copper (Copper).
The semiconductor device may be a 3D NAND device, and refer to fig. 2, which is a schematic diagram of a 3D NAND device provided in an embodiment of the present application, wherein the 3D NAND device may sequentially include a substrate, a stack layer, a dielectric layer, and a metal layer from bottom to top, wherein the stack layer is formed by alternately stacking insulating layers and gate layers, a channel hole is formed in the stack layer, a channel layer and a filling layer are formed in the channel hole, a metal line is formed in the dielectric layer, the metal line is connected to the filling layer in the channel hole, the metal line is filled with metal in a via hole penetrating through the dielectric layer, the metal line is connected to the metal layer on the top layer, the metal line can be led out through the metal layer, and the metal layer on the top layer may also be connected to other metal lines, which is. The metal layer on the top layer can be used as the film layer to be tested.
To measure the film to be measured, an optical line width measurement device may be used to measure the film to be measured, and a measurement Spectrum (Spectrum) may be obtained. Specifically, the optical line width measuring device can emit the detection light to the film layer to be detected, the detection light is reflected at the interface of the film layer to be detected, of course, the reflection light is also reflected at the interface of other film layers under the film layer to be detected, the interference effect occurs between the reflection light to generate intensity change, and thus the measurement spectrum of the detection light after reflection and interference can be obtained. The abscissa of the measurement spectrum may be a wavelength, and the ordinate is a light intensity, that is, the measurement spectrum includes intensity information of light of each wavelength.
In the prior art, after obtaining a spectrum corresponding to a reference film, modeling may be performed based on the reference film and films therebelow, and the intensity of each wavelength of received reflected light is analyzed, so as to obtain the interference condition of the reflected light, and the thickness of the reference film is calculated by using a strict coupled-wave analysis (RCWA) method, because the interference of the reflected light is also affected by the interfaces of other films therebelow, so that the thickness of the reference film can be obtained by integrating the influence of each film on the spectrum. However, when the method is used for detecting the thickness of the film layer to be detected, the device structure under the film layer to be detected is complex, and along with further complication and diversification of the device structure under the film layer to be detected, the difficulty and workload of modeling the film layer to be detected and the film layer under the film layer to be detected are increased, which is not beneficial to improving the efficiency of film layer detection.
S102, determining the measurement thickness corresponding to the measurement spectrum by using the pre-established corresponding relation between the spectrum and the film thickness as the thickness of the film to be measured.
In order to improve the film layer detection efficiency, the corresponding relationship between the spectrum and the film layer thickness may be pre-established in the embodiment of the present application, so that after the measurement spectrum is obtained, the measurement thickness corresponding to the measurement spectrum may be determined based on the corresponding relationship between the spectrum and the film layer thickness, and the determined measurement thickness may be used as the thickness of the film layer to be detected. That is to say, in the embodiment of the application, the corresponding relationship between the spectrum and the film thickness needs to be established in the early stage, and the thickness of the film to be detected can be calculated without establishing a model of the device structure under the film to be detected in the later stage, so that the calculation process is simplified, and the detection efficiency is improved.
Specifically, the pre-established correspondence between the spectrum and the film thickness is obtained by measuring historical films with different thicknesses by using optical line width measuring equipment, and the historical films and the film to be measured are made of the same material. The method comprises the steps of measuring historical film layers with different thicknesses by using optical line width measuring equipment, specifically measuring a plurality of historical film layers by using the optical line width measuring equipment, wherein the thicknesses of the historical film layers are different, and specifically measuring a plurality of positions of the historical film layers by using the optical line width measuring equipment, wherein the historical film layers are different at different positions, and the thicknesses of the different historical film layers are different.
In the embodiment of the application, the thickness of the historical film layer is not needed to reflect the thickness of the film layer to be detected, so the historical film layer and the film layer to be detected are not formed at the same time. That is to say, when the film layer to be detected is the metal layer located on the top layer in the semiconductor device, the history film layer may also be the metal layer located on the top layer in the semiconductor device, and the structure of the semiconductor device where the history film layer is located may be the same as or different from that of the semiconductor device where the film layer to be detected is located, that is, the structure of the semiconductor device where at least one history film layer is located may be the same as that of the semiconductor device where the film layer to be detected is located, which is favorable for improving the thickness detection accuracy of the film layer to be detected.
In fact, in order to improve the detection of the thickness of the film to be detected, a plurality of history films for determining the corresponding relationship between the spectrum and the film thickness may be provided, or even a large number of history films may include films in semiconductor devices with a plurality of structures, so that the matching degree between the structure of the device where the film to be detected is located and the structure of the device where the history films are located may be improved, the difference between the film to be detected and the history films may be reduced, and the matching degree between the spectra of the film to be detected and the spectra of the history films may be improved, thereby making the finally obtained thickness of the film to be detected more accurate.
In a specific operation, the structure of the semiconductor device where the history film layer is located may cover a process type of the station, for example, when the film layer to be tested is a copper conductive layer, the copper conductive layer needs to be detected when the copper conductive layer is subjected to Chemical Mechanical Polishing (CMP), and the history film layer may cover a process window of the station for copper CMP and the sample size is large enough.
The thickness of the historical film layer is obtained by measuring the historical film layer through a metal pulse machine, specifically, the metal pulse equipment can emit pumping waves to the historical film layer, the pumping waves are emitted and reflected at the interface of the historical film layer and the film layer below the historical film layer, the pumping waves correspond to a plurality of intensity peak values of the pumping waves, and the thickness of the historical film layer can be obtained by calculating the peak values of the pumping waves and the propagation speed of the pumping waves in the historical film layer according to the intensity of the received pumping waves at different time points. That is, with a metal pulse device, it is possible to obtain the intensity curves of the pump wave at different time points, and the peak positions are obtained by the interface reflection, so that the distance between the two interfaces can be determined by the time difference between the two peaks.
In actual operation, the thermal wave effect generated by the pump wave emitted by the metal pulse device can cause the burn of the film to be tested, and fig. 3 is a schematic diagram of a historical film in the embodiment of the present application, in which the inside of the black thick-line rectangular frame is a test range, the diamond region is a current test region, and the black dot region is a region subject to burn due to the test. The reason is that the metal pulse equipment cannot directly detect the film layer to be detected in the semiconductor device, and for the historical film layer, the historical film layer is a test sample and does not need to consider the functional damage of the historical film layer, so that the thickness of the historical film layer can be obtained by using the metal pulse equipment.
In order to make the corresponding relationship between the spectrum and the film thickness more accurate, in the embodiment of the application, the optical line width measuring device and the metal pulse machine can be used for measuring the same position of the historical film to obtain the spectrum and the film thickness of the position, so that the corresponding relationship between the spectrum and the film thickness is formed, the measurement is repeated, and the corresponding relationship between a plurality of spectra and the film thickness can be obtained.
In addition, one of the keys of measuring the historical film layer by using the metal pulse device is that different peak values correspond to different interfaces, and the distance between the two interfaces is determined by using the time difference between the two peak values, so that the metal pulse device can be calibrated before the metal pulse device collects data, so that the metal pulse machine can automatically identify the peak positions corresponding to the upper and lower interfaces of the historical film layer. Specifically, the calibration film layer may be one of the historical film layers, the first result may be a thickness of the calibration film layer determined based on the peak searching position of the metal pulse machine, and then the calibration film layer is measured by using a Transmission Electron Microscope (TEM) to obtain a second result, where the second result is the thickness of the calibration film layer obtained by using the TEM, and the metal pulse machine may be calibrated based on the first result and the second result to obtain a more accurate peak searching position of the metal pulse machine, and of course, if the peak searching position of the metal pulse device is more accurate, the step of calibration may not be performed.
After the measurement spectrum is obtained, the measurement thickness corresponding to the measurement spectrum can be determined based on the corresponding relation between the spectrum and the film thickness, and the determined measurement thickness can be used as the thickness of the film to be measured. Specifically, the corresponding relationship between the spectrum and the film thickness may be used to train a machine learning model, and then the measured thickness corresponding to the measured spectrum may be determined by using the machine learning film obtained by the training. The corresponding relation between some characteristics of the spectrum and the film thickness can be determined by utilizing the machine learning model, and the characteristics are the characteristics with high correlation degree with the film thickness, so that the determination accuracy of the thickness measurement degree can be improved to a certain extent.
In the embodiment of the present application, the machine learning model may include: neural network models, such as fully-connected neural network models, convolutional neural network models, and the like. Of course, those skilled in the art can determine other machine learning models according to actual situations, and the examples are not given here.
The machine learning model can be embedded into the optical line width measuring equipment, so that the measured thickness is obtained by directly analyzing after the optical line width measuring equipment obtains the measured spectrum, and the measuring efficiency is further improved.
The embodiment of the application provides a detection method, which can measure historical film layers with different thicknesses by using an optical line width measuring device in advance to obtain a corresponding relation between a spectrum and the film layer thickness, wherein the historical film layers are made of the same material as the film layers to be measured, so that the corresponding relation between the spectrum of the historical film layers and the film layer thickness is consistent with that of the film layers to be measured, and thus, after the film layers to be measured are measured by using the optical line width measuring device to obtain a measured spectrum, the measured thickness corresponding to the measured spectrum can be determined by using the pre-established corresponding relation between the spectrum and the film layer thickness to be measured as the thickness of the film layers to be measured. That is to say, in this application embodiment, the corresponding relation of utilizing spectrum and rete thickness can realize going to detect the thickness of rete to be measured, compare in the mode that only obtains the thickness of rete to be measured through the thickness of the reference rete that utilizes the same technology to form simultaneously, the corresponding relation of spectrum and rete thickness is gathered in earlier stage in this application embodiment, the thickness of the rete to be measured that finally obtains like this corresponds with the spectrum of the rete to be measured, consequently, improved the accuracy that detects the thickness of the rete to be measured, and during the test, as long as utilize optical line width measuring equipment to measure the rete to be measured, can obtain the thickness of the rete to be measured through handling the measurement spectrum, the operation degree of difficulty has been reduced and the calculated amount has been reduced.
Based on the above detection method, an embodiment of the present application further provides a detection apparatus, and referring to fig. 4, a structural block diagram of the detection apparatus provided in the embodiment of the present application is shown, where the structural block diagram includes:
the optical line width measuring device 110 is used for measuring the film layer to be measured to obtain a measurement spectrum; measuring historical film layers with different thicknesses to pre-establish a corresponding relation between a spectrum and the film layer thickness, wherein the historical film layers and the film layers to be measured are made of the same material;
the detection control device 120 is configured to determine a measurement thickness corresponding to the measurement spectrum as the thickness of the film to be measured by using the pre-established correspondence between the spectrum and the film thickness.
Optionally, the detection control device is specifically configured to:
determining the measurement thickness corresponding to the measurement spectrum by using a machine learning model obtained by pre-training; the machine learning model is obtained by training based on the corresponding relation between the spectrum and the film thickness.
Optionally, the machine learning model includes: a neural network model.
Optionally, the detection device further includes:
the metal pulse machine is used for measuring the historical film layer to obtain the thickness of the historical film layer; and the corresponding relation between the spectrum and the film thickness is obtained by measuring the same position of the historical film through the optical line width measuring equipment and the metal pulse machine.
Optionally, the detection device further includes:
the transmission electron microscope is used for measuring the calibration film layer to obtain a second result;
the metal pulse machine is also used for measuring the calibration film layer to obtain a first result;
the control equipment is further used for calibrating the metal pulse machine according to the first result and the second result.
Optionally, the film layer to be tested is a metal layer located on the top layer in the semiconductor device.
Optionally, the number of the history film layers is multiple, and at least one history film layer is a metal layer located on a top layer in a device having the same structure as the semiconductor device.
Optionally, the metal layer is made of copper.
It should be noted that, in the embodiments of the present application, reference may be made to each embodiment, and for an embodiment of an apparatus, reference may be made to descriptions of method embodiments, so that descriptions are concise.
The foregoing is merely a preferred embodiment of the present application and is not intended to limit the present application in any way. Although the present application has been described with reference to the preferred embodiments, it is not intended to limit the present application. Those skilled in the art can now make numerous possible variations and modifications to the disclosed embodiments, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the claimed embodiments. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application still fall within the protection scope of the technical solution of the present application without departing from the content of the technical solution of the present application.
Claims (13)
1. A method of detection, comprising:
measuring the film layer to be measured by using optical line width measuring equipment to obtain a measuring spectrum;
determining the measurement thickness corresponding to the measurement spectrum as the thickness of the film to be measured by utilizing the corresponding relation between the pre-established spectrum and the film thickness; the pre-established corresponding relation between the spectrum and the film thickness is obtained by measuring historical films with different thicknesses by the optical line width measuring equipment, and the historical films and the film to be measured are made of the same material.
2. The method of claim 1, wherein determining the measured thickness corresponding to the measured spectrum using a pre-established correspondence between spectrum and film thickness comprises:
determining the measurement thickness corresponding to the measurement spectrum by using a machine learning model obtained by pre-training; the machine learning model is obtained by training based on the corresponding relation between the spectrum and the film thickness.
3. The method of claim 2, wherein the machine learning model comprises: a neural network model.
4. The method of claim 1, wherein the thickness of the historical film layer is measured using a metal pulse machine; and the corresponding relation between the spectrum and the film thickness is obtained by measuring the same position of the historical film through the optical line width measuring equipment and the metal pulse machine.
5. The method of claim 4, further comprising, prior to measuring the historical film layer using the metal pulse machine to obtain the thickness of the historical film layer:
measuring the calibration film layer by using a metal pulse machine to obtain a first result;
measuring the calibration film layer by using a transmission electron microscope to obtain a second result;
and calibrating the metal pulse machine according to the first result and the second result.
6. The method according to any one of claims 1 to 5, wherein the film layer to be tested is a metal layer on a top layer in a semiconductor device.
7. The method of claim 6, wherein the plurality of history film layers is provided, and at least one of the history film layers is a metal layer located at a top layer in a same device as the semiconductor device structure.
8. The method of claim 6, wherein the metal layer is copper.
9. A detection device, comprising:
the optical line width measuring equipment is used for measuring the film layer to be measured to obtain a measuring spectrum; measuring historical film layers with different thicknesses to pre-establish a corresponding relation between a spectrum and the film layer thickness, wherein the historical film layers and the film layers to be measured are made of the same material;
and the detection control equipment is used for determining the measurement thickness corresponding to the measurement spectrum as the thickness of the film to be measured by utilizing the pre-established corresponding relation between the spectrum and the film thickness.
10. The apparatus according to claim 9, wherein the detection control device is specifically configured to:
determining the measurement thickness corresponding to the measurement spectrum by using a machine learning model obtained by pre-training; the machine learning model is obtained by training based on the corresponding relation between the spectrum and the film thickness.
11. The apparatus of claim 10, wherein the machine learning model comprises: a neural network model.
12. The apparatus of claim 9, further comprising:
the metal pulse machine is used for measuring the historical film layer to obtain the thickness of the historical film layer; and the corresponding relation between the spectrum and the film thickness is obtained by measuring the same position of the historical film through the optical line width measuring equipment and the metal pulse machine.
13. The apparatus of claim 12, further comprising:
the transmission electron microscope is used for measuring the calibration film layer to obtain a second result;
the metal pulse machine is also used for measuring the calibration film layer to obtain a first result;
the control equipment is further used for calibrating the metal pulse machine according to the first result and the second result.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010078965.8A CN111276414A (en) | 2020-02-03 | 2020-02-03 | Detection method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010078965.8A CN111276414A (en) | 2020-02-03 | 2020-02-03 | Detection method and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111276414A true CN111276414A (en) | 2020-06-12 |
Family
ID=71002020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010078965.8A Pending CN111276414A (en) | 2020-02-03 | 2020-02-03 | Detection method and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111276414A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112786603A (en) * | 2021-02-03 | 2021-05-11 | 长江存储科技有限责任公司 | 3D memory device, measuring method thereof and thin film measuring device |
| CN112833801A (en) * | 2021-02-05 | 2021-05-25 | 长鑫存储技术有限公司 | Thin film thickness test method, test system, storage medium, and electronic device |
| CN113091626A (en) * | 2021-03-29 | 2021-07-09 | 长鑫存储技术有限公司 | Method for measuring film thickness of semiconductor device |
| CN113358042A (en) * | 2021-06-30 | 2021-09-07 | 长江存储科技有限责任公司 | Method for measuring film thickness |
| CN113823593A (en) * | 2021-08-19 | 2021-12-21 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of TFT (thin film transistor) backboard |
| CN115466953A (en) * | 2022-10-11 | 2022-12-13 | 郑煤机智鼎液压有限公司 | Laser cladding layer thickness detection method |
| US11867497B2 (en) | 2021-03-29 | 2024-01-09 | Changxin Memory Technologies, Inc. | Method for measuring film thickness of semiconductor device |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1574341A (en) * | 2003-06-03 | 2005-02-02 | 三星电子株式会社 | Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring pattern |
| CN1726116A (en) * | 2002-10-17 | 2006-01-25 | 株式会社荏原制作所 | Polishing state monitoring apparatus and polishing apparatus and method |
| US20060052979A1 (en) * | 2004-08-10 | 2006-03-09 | Jang-Ik Park | Method and apparatus for measuring thickness of metal layer |
| CN101673659A (en) * | 2008-09-10 | 2010-03-17 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting measurement stability of tester tables |
| JP2011082442A (en) * | 2009-10-09 | 2011-04-21 | Hitachi High-Technologies Corp | Plasma etching treatment device |
| CN102687073A (en) * | 2009-10-13 | 2012-09-19 | Asml荷兰有限公司 | Inspection method and apparatus |
| CN103155110A (en) * | 2010-08-06 | 2013-06-12 | 应用材料公司 | Techniques for matching measured spectra to reference spectra for in-situ optical monitoring |
| CN203642899U (en) * | 2013-10-29 | 2014-06-11 | 中芯国际集成电路制造(北京)有限公司 | Copper film thickness measurement standard sheet |
| CN103915378A (en) * | 2014-04-08 | 2014-07-09 | 上海华力微电子有限公司 | Etching method for improving uniformity of contact hole line width |
| CN105588516A (en) * | 2016-02-23 | 2016-05-18 | 天津大学 | Paint film thickness measuring method based on terahertz pulse spectrum |
| CN106024664A (en) * | 2016-05-25 | 2016-10-12 | 上海华力微电子有限公司 | Metal layer film thickness stack model calibration method and system |
| CN106441126A (en) * | 2016-10-26 | 2017-02-22 | 电子科技大学 | Method and system for measuring optical film thicknesses based on reflectivity spectra |
| CN106482651A (en) * | 2016-11-14 | 2017-03-08 | 山东省科学院自动化研究所 | A kind of method that capsule housing thickness is measured based on terahertz time-domain spectroscopic technology |
| CN107588736A (en) * | 2017-08-31 | 2018-01-16 | 长江存储科技有限责任公司 | A kind of measuring method and device of storage medium thickness |
| CN108535212A (en) * | 2018-04-11 | 2018-09-14 | 华东理工大学 | A kind of test method of the erosion pattern of the thermal barrier coating based on Terahertz Technology |
-
2020
- 2020-02-03 CN CN202010078965.8A patent/CN111276414A/en active Pending
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1726116A (en) * | 2002-10-17 | 2006-01-25 | 株式会社荏原制作所 | Polishing state monitoring apparatus and polishing apparatus and method |
| CN101530983A (en) * | 2002-10-17 | 2009-09-16 | 株式会社荏原制作所 | Polishing state monitoring apparatus and polishing apparatus and method |
| CN1574341A (en) * | 2003-06-03 | 2005-02-02 | 三星电子株式会社 | Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring pattern |
| US20060052979A1 (en) * | 2004-08-10 | 2006-03-09 | Jang-Ik Park | Method and apparatus for measuring thickness of metal layer |
| CN101673659A (en) * | 2008-09-10 | 2010-03-17 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting measurement stability of tester tables |
| JP2011082442A (en) * | 2009-10-09 | 2011-04-21 | Hitachi High-Technologies Corp | Plasma etching treatment device |
| CN102687073A (en) * | 2009-10-13 | 2012-09-19 | Asml荷兰有限公司 | Inspection method and apparatus |
| CN103155110A (en) * | 2010-08-06 | 2013-06-12 | 应用材料公司 | Techniques for matching measured spectra to reference spectra for in-situ optical monitoring |
| CN203642899U (en) * | 2013-10-29 | 2014-06-11 | 中芯国际集成电路制造(北京)有限公司 | Copper film thickness measurement standard sheet |
| CN103915378A (en) * | 2014-04-08 | 2014-07-09 | 上海华力微电子有限公司 | Etching method for improving uniformity of contact hole line width |
| CN105588516A (en) * | 2016-02-23 | 2016-05-18 | 天津大学 | Paint film thickness measuring method based on terahertz pulse spectrum |
| CN106024664A (en) * | 2016-05-25 | 2016-10-12 | 上海华力微电子有限公司 | Metal layer film thickness stack model calibration method and system |
| CN106441126A (en) * | 2016-10-26 | 2017-02-22 | 电子科技大学 | Method and system for measuring optical film thicknesses based on reflectivity spectra |
| CN106482651A (en) * | 2016-11-14 | 2017-03-08 | 山东省科学院自动化研究所 | A kind of method that capsule housing thickness is measured based on terahertz time-domain spectroscopic technology |
| CN107588736A (en) * | 2017-08-31 | 2018-01-16 | 长江存储科技有限责任公司 | A kind of measuring method and device of storage medium thickness |
| CN108535212A (en) * | 2018-04-11 | 2018-09-14 | 华东理工大学 | A kind of test method of the erosion pattern of the thermal barrier coating based on Terahertz Technology |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112786603A (en) * | 2021-02-03 | 2021-05-11 | 长江存储科技有限责任公司 | 3D memory device, measuring method thereof and thin film measuring device |
| WO2022166520A1 (en) * | 2021-02-03 | 2022-08-11 | 长江存储科技有限责任公司 | 3d storage device and measurement method therefor, and thin film measurement apparatus |
| CN112833801A (en) * | 2021-02-05 | 2021-05-25 | 长鑫存储技术有限公司 | Thin film thickness test method, test system, storage medium, and electronic device |
| CN112833801B (en) * | 2021-02-05 | 2022-04-05 | 长鑫存储技术有限公司 | Thin film thickness test method, test system, storage medium, and electronic device |
| CN113091626A (en) * | 2021-03-29 | 2021-07-09 | 长鑫存储技术有限公司 | Method for measuring film thickness of semiconductor device |
| WO2022205742A1 (en) * | 2021-03-29 | 2022-10-06 | 长鑫存储技术有限公司 | Method for measuring film thickness of semiconductor device |
| CN113091626B (en) * | 2021-03-29 | 2023-11-03 | 长鑫存储技术有限公司 | Method for measuring film thickness of semiconductor device |
| US11867497B2 (en) | 2021-03-29 | 2024-01-09 | Changxin Memory Technologies, Inc. | Method for measuring film thickness of semiconductor device |
| CN113358042A (en) * | 2021-06-30 | 2021-09-07 | 长江存储科技有限责任公司 | Method for measuring film thickness |
| CN113358042B (en) * | 2021-06-30 | 2023-02-14 | 长江存储科技有限责任公司 | Method for measuring film thickness |
| CN113823593A (en) * | 2021-08-19 | 2021-12-21 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of TFT (thin film transistor) backboard |
| CN115466953A (en) * | 2022-10-11 | 2022-12-13 | 郑煤机智鼎液压有限公司 | Laser cladding layer thickness detection method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111276414A (en) | Detection method and device | |
| US20220163320A1 (en) | Monitoring system and method for verifying measurements in pattened structures | |
| US20180136272A1 (en) | Fault detection apparatus | |
| US20080049214A1 (en) | Measuring Diffractive Structures By Parameterizing Spectral Features | |
| CN114543690B (en) | Modeling method of optical characteristics, photoacoustic measurement method and photoacoustic measurement device | |
| TW201350783A (en) | Measurement model optimization based on parameter variations across a wafer | |
| KR20180038477A (en) | Hybrid measurement system and measurement method in thin film | |
| KR101360540B1 (en) | Method for evaluating property of electronic device using spectroscopic ellipsometry | |
| US9824176B2 (en) | Optical critical dimension target design | |
| KR20160025865A (en) | Apparatus for measuring thickness of thin film, measuring system comprising the same, and method for measuring thickness of thin film | |
| CN111678928B (en) | Method and apparatus for analyzing semiconductor structure | |
| US20220180505A1 (en) | Optical end-pointing for integrated circuit delayering; systems and methods using the same | |
| JP4774545B2 (en) | Method for obtaining value of relative permittivity and device for obtaining relative permittivity value | |
| KR20180076592A (en) | Method for measuring semiconductor device | |
| KR100707585B1 (en) | System and method for automatically measuring carrier density distribution by using capacitance-voltage characteristics of mos transistor device | |
| Srichandan et al. | Machine Learning for Deep Trench Bottom Width Measurements using Scatterometry: AM: Advanced Metrology | |
| CN114935557A (en) | Multilayer nano-film attribute prediction method based on machine learning | |
| KR101302587B1 (en) | Evaluation method for minority carrier lifetime in silicon wafer | |
| US20150219440A1 (en) | Multi-analysis algorithm using signal sharing and related apparatus | |
| Duran et al. | Infrared reflectometry for metrology of trenches in power devices | |
| US8049213B2 (en) | Feature dimension measurement | |
| CN113109647B (en) | Method and system for analyzing electrical defects and electrical parameters of conductive structure | |
| CN114623777B (en) | Construction method and measurement method of measurement model of stacked nanosheet structure | |
| CN115760672A (en) | Test model establishing method, test method and detection equipment | |
| CN114441598B (en) | 3D stacked and packaged integrated circuit chip and failure positioning method and device thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200612 |