CN101673659A - Method for detecting measurement stability of tester tables - Google Patents
Method for detecting measurement stability of tester tables Download PDFInfo
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- CN101673659A CN101673659A CN200810042737A CN200810042737A CN101673659A CN 101673659 A CN101673659 A CN 101673659A CN 200810042737 A CN200810042737 A CN 200810042737A CN 200810042737 A CN200810042737 A CN 200810042737A CN 101673659 A CN101673659 A CN 101673659A
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Abstract
The invention proposes a method for detecting measurement stability of tester tables. The method comprises the following steps: providing a control wafer serving as a test wafer and electroplating a semiconductor substrate with a metal layer; depositing an anti-oxidation layer on the metal layer; utilizing a tester table to measure the thickness of the metal layer of the control wafer more than once; and judging whether the measurement stability of the tester table is within an acceptable range according to more than one metal-layer thicknesses obtained through measurement. The method obtainsa standard deviation value by calculating the more than one metal-layer thicknesses obtained through measurement, and can accurately judge whether the measurement stability of the tester table is within the acceptable range according to the obtained standard deviation value. The method has the advantages of simple effective operation and results easy to observe and judge.
Description
Technical field
The present invention relates to a kind of method that detects tester table, and be particularly related to the method that is used to detect measurement stability of tester tables in a kind of semiconductor technology.
Background technology
Be used for making in the technology of copper conductor interconnection structure, its copper metal deposition and grinding rate all may exist inhomogeneities, if carefully do not controlled, can cause variable thickness, or at the undesired material of the remained on surface of wafer.Variable thickness can have influence on resistance, and then causes the inefficacy of assembly or overall efficiency to reduce.Remain in inner material and may cause short circuit between the lead, can cause component failures and yield loss equally.There is a kind of nondestructive mode at present, can directly in the lead structure of arrays of inferior micron, measures thickness, so that the deposition and the grinding rate of control copper metal.
This method promptly is to utilize microsecond ultrasonic waves laser sonar (Picosecond Ultrasonic LaserSonar), it is the laser pulse ripple that utilizes a kind of wavelength very short, come the surface of temporary transient heated sample, cause sample surfaces to expand fast, and then send a kind of sound wave that is sent in the sample.When sound wave was run into interface between the thin layer, some can reflect back into the surface; Arrive the echo on surface, on reflection characteristic, produce the change that can allow the people detect.From the generation of echo to turning back elapsed time, the relevant knowledge of acoustic wave character that cooperates us that sample copy stature matter is had again just can gauging surface and the distance between each interface below it.For than radium-shine formed 5 * 7 microns planar structures that optical path is also big, as the copper metal bond pads, the measurement of thickness is more direct.In addition, the shape that can also respond by the change and the reflection coefficient of amplitude value, and the kind of automatic identification material, so the kind of system's energy Auto-Sensing material: dielectric layer, barrier layer or copper metal layer, and use suitable signal treatment technology and calculate its thickness.
For the detection that this testing apparatus of microsecond ultrasonic waves laser sonar is measured stability, the general control sheet that uses please refer to Fig. 1 as test wafer, Figure 1 shows that the schematic diagram that detects the tester table method in the prior art.It forms oxide layer 110 on the Semiconductor substrate 100 of control sheet, these oxide layer 110 compositions are SO
2, electro-coppering metal level 120 on oxide layer 110 utilizes the copper metal layer 120 on 150 pairs of controls of microsecond ultrasonic waves laser sonar testing apparatus sheet to measure one-tenth-value thickness 1/10 afterwards then.Because copper metal layer 120 is exposed in the air, when microsecond ultrasonic waves laser sonar 150 sends laser pulse ripple arrival copper metal layer 120 surfaces, copper metal layer 120 surfaces can be covered by thermal oxidation formation cupric oxide, because the degree of oxidation of difference is also different, caused the evenness on copper metal layer 120 surfaces bad, form the rough zone of part, particularly measure through the once above of long period, the copper metal layer 120 on control sheet surface is heated more than once and is exposed in the air for a long time, the suffered degree of oxidation of copper metal layer 120 is more serious, the oxide thickness difference of difference is bigger, when measuring because the propagation velocity of sound wave in copper metal layer 120 and its oxide is inconsistent, therefore influenced the ET of difference, thereby caused the one-tenth-value thickness 1/10 result who measures copper metal layer 120 inconsistent, the metal layer thickness value itself that draws according to this method just has than large deviation, please refer to Fig. 2, Figure 2 shows that the result schematic diagram that detects tester table in the prior art, pass through after the long period as seen from the figure, it is bigger that the measurement result of gained differs each other, and whether the measurement stability that therefore can not be used for judging microsecond ultrasonic waves laser sonar testing apparatus is within acceptable scope.
Summary of the invention
The present invention proposes to be used to detect in a kind of semiconductor technology the method for measurement stability of tester tables, and whether the measurement stability that can judge tester table accurately is within acceptable scope.
In order to achieve the above object, the present invention proposes to be used to detect in a kind of semiconductor technology the method for measurement stability of tester tables, and it comprises the following steps:
Provide the surface to be formed with the control sheet of oxide layer and metal level successively;
Described metal level is annealed and milled processed;
On described metal level, deposit anti oxidation layer;
Utilize tester table that the metal layer thickness of described control sheet is carried out once above the measurement;
Judge described tester table measuring stability according to an above metal layer thickness value measuring gained.
Optionally, the thickness of described anti oxidation layer is 100 dusts～500 dusts.
Optionally, described anti oxidation layer composition is a silicon nitride.
Optionally, described thickness of oxide layer is 1000 dusts～4000 dusts.
Optionally, described metal layer thickness is 1000 dusts～10000 dusts.
Optionally, described metal level is a copper metal layer.
Optionally, the temperature of described annealing in process is 200 degrees centigrade, and the processing time is 90 seconds.
Optionally, the step of judging described tester table measuring stability is judged described tester table measuring stability according to described standard deviation value then for for an above metal layer thickness value measuring gained is calculated standard deviation value.
Beneficial effect of the present invention is: the method for the detection measurement stability of tester tables that the present invention proposes, on the control sheet, form earlier oxide layer and metal level and metal level is annealed and cmp is handled, then on metal level, form anti oxidation layer, be used to prevent that thereby the metal layer thickness measurement that causes in the rough zone of the oxidized formation of metal level is inaccurate, utilize tester table that the metal level of described control sheet is carried out once above the measurement then, can judge promptly that according to an above metal layer thickness value measuring gained the measurement stability of tester table is whether within acceptable scope, it is simple to operate effectively, and the result is easy to observe and judges.
Optionally, an above metal layer thickness value measuring gained is calculated standard deviation value, can judge more accurately that according to the standard deviation value of gained the measurement stability of tester table is whether within acceptable scope.
Description of drawings
Figure 1 shows that the schematic diagram that detects the tester table method in the prior art.
Figure 2 shows that the result schematic diagram that detects tester table in the prior art.
Figure 3 shows that the schematic diagram that detects the tester table method in the preferred embodiment of the present invention.
Figure 4 shows that the result schematic diagram that the detection tester table method of the preferred embodiment according to the present invention draws.
Embodiment
In order more to understand technology contents of the present invention, especially exemplified by specific embodiment and cooperate appended graphic being described as follows.
Please refer to Fig. 3, Figure 3 shows that the schematic diagram that detects the tester table method in the preferred embodiment of the present invention.The method of the detection measurement stability of tester tables that the present invention proposes at this testing apparatus of microsecond ultrasonic waves laser sonar, at first provides the control sheet as test wafer, and form oxide layer 210 on the Semiconductor substrate 200 of control sheet, and these oxide layer 210 compositions are SO
2The thickness of described oxide layer 210 can be 1000 dusts～4000 dusts, the purpose that forms this oxide layer 210 is that the copper ion for the copper metal layer of electroplating after preventing 220 is diffused in annealing process in the Semiconductor substrate 200, therefore with this oxide layer 210 as the barrier layer.Electro-coppering metal level 220 on oxide layer 210 then, electroless plating (Electro-Chemical Plating is adopted in preferred embodiment of the present invention, ECP) method electro-coppering metal level 220 on oxide layer 210, the thickness of described metal level 220 can be 1000 dusts～10000 dusts, concrete thickness can adjust according to different test control sheets, to reach the purpose of doing test at different control sheets.Then described copper metal layer 220 is annealed and milled processed, annealing in process mainly be meant with material be exposed to one section of high temperature for a long time after, and then the heat treatment processing procedure that slowly cools off, the annealing in process that is adopted in preferred embodiment of the present invention is the annealing in process of carrying out under 200 degrees centigrade environment 90 seconds, copper metal layer 220 to annealed processing carries out cmp processing (Chemical mechanical planarization then, CMP), cmp is that rugged part on the copper metal layer 220 is removed, thereby reaches the purpose of planarization.
Then on described copper metal layer 220, deposit anti oxidation layer 230, anti oxidation layer 230 compositions that deposited in preferred embodiment of the present invention are silicon nitride, it also can be the nitrogen compound that contains tantalum or titanium, with silicon nitride is good, anti oxidation layer 230 can prevent that copper metal layer 220 is covered by thermal oxidation formation cupric oxide in the air because of being exposed to, avoid on copper metal layer 220, forming the rough zone of part, the thickness of described anti oxidation layer 230 can be 100 dusts～500 dusts, preferable is between 200 dusts～300 dusts, and the purpose that can reach anti-oxidation can be convenient for measuring thickness again.The deposition process that is adopted is chemical vapour deposition (CVD) (Chemical vapordeposition, CVD), it is that reactive material issues biochemical reaction in the gaseous state condition, generates solid matter and is deposited on the solid matrix surface of heating, and then make the technology of solid material.
Utilizing tester table then is that the copper metal layer 220 of 250 pairs of described control sheets of microsecond ultrasonic waves laser sonar testing apparatus carries out once above the measurement, because the shape that microsecond ultrasonic waves laser sonar testing apparatus 250 can respond by the change and the reflection coefficient of amplitude value, and the kind of automatic identification material, the kind of its energy Auto-Sensing material is a dielectric layer, the barrier layer, or copper metal layer, and use suitable signal treatment technology and calculate its thickness, microsecond ultrasonic waves laser sonar testing apparatus 250 can calculate the thickness of anti oxidation layer 230 and the thickness of copper metal layer 220 in preferred embodiment of the present invention, by the one-tenth-value thickness 1/10 that can directly only show copper metal layer 220 in the result is set.
Can judge that according to above metal level 220 one-tenth-value thickness 1/10s measuring gained described tester table is that microsecond ultrasonic waves laser sonar testing apparatus 250 measuring stability are whether in tolerance interval.Please refer to Fig. 4, Figure 4 shows that the result schematic diagram that the detection tester table method of the preferred embodiment according to the present invention draws.As can be seen from the figure, once above metal level 220 one-tenth-value thickness 1/10s of testing gained through the long period are more or less the same each other, change comparatively steady, one-tenth-value thickness 1/10 to the metal level 220 of measuring gained calculates standard deviation value, when the standard deviation value that calculates be no more than standard value 1/6 the time judge that the microsecond ultrasonic waves laser sonar testing apparatus 250 surveyed has and measure stability preferably, otherwise judge its measurement less stable, whether the further inspection of needs is broken down or mistake is set.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (8)
1. a method that detects measurement stability of tester tables is characterized in that comprising the following steps:
Provide the surface to be formed with the control sheet of oxide layer and metal level successively;
Described metal level is annealed and milled processed;
On described metal level, deposit anti oxidation layer;
Utilize tester table that the metal layer thickness of described control sheet is carried out once above the measurement;
Judge described tester table measuring stability according to an above metal layer thickness value measuring gained.
2. the method for detection measurement stability of tester tables according to claim 1, the thickness that it is characterized in that described anti oxidation layer are 100 dusts～500 dusts.
3. the method for detection measurement stability of tester tables according to claim 1 is characterized in that described anti oxidation layer composition is a silicon nitride.
4. the method for detection measurement stability of tester tables according to claim 1 is characterized in that described thickness of oxide layer is 1000 dusts～4000 dusts.
5. the method for detection measurement stability of tester tables according to claim 1 is characterized in that described metal layer thickness is 1000 dusts～10000 dusts.
6. the method for detection measurement stability of tester tables according to claim 1 is characterized in that described metal level is a copper metal layer.
7. the method for detection measurement stability of tester tables according to claim 1, the temperature that it is characterized in that described annealing in process is 200 degrees centigrade, the processing time is 90 seconds.
8. the method for detection measurement stability of tester tables according to claim 1, the step that it is characterized in that judging described tester table measuring stability is judged described tester table measuring stability according to described standard deviation value then for for an above metal layer thickness value measuring gained is calculated standard deviation value.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269363A (en) * | 2014-09-01 | 2015-01-07 | 上海华力微电子有限公司 | Method for preventing lifting of machine table from causing mechanical scratch to machine |
| CN106024758A (en) * | 2016-06-30 | 2016-10-12 | 上海华力微电子有限公司 | Advanced control method of polysilicon gate critical dimension |
| TWI603055B (en) * | 2015-11-16 | 2017-10-21 | 台灣積體電路製造股份有限公司 | Measurement system and measurement method thereof |
| CN111276414A (en) * | 2020-02-03 | 2020-06-12 | 长江存储科技有限责任公司 | Detection method and device |
| CN112635349A (en) * | 2020-12-21 | 2021-04-09 | 长江存储科技有限责任公司 | Method for measuring thickness of metal film on surface of wafer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6175416B1 (en) * | 1996-08-06 | 2001-01-16 | Brown University Research Foundation | Optical stress generator and detector |
| CN1774624A (en) * | 2003-04-16 | 2006-05-17 | 皇家飞利浦电子股份有限公司 | Method for measuring thin films |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269363A (en) * | 2014-09-01 | 2015-01-07 | 上海华力微电子有限公司 | Method for preventing lifting of machine table from causing mechanical scratch to machine |
| TWI603055B (en) * | 2015-11-16 | 2017-10-21 | 台灣積體電路製造股份有限公司 | Measurement system and measurement method thereof |
| CN106024758A (en) * | 2016-06-30 | 2016-10-12 | 上海华力微电子有限公司 | Advanced control method of polysilicon gate critical dimension |
| CN111276414A (en) * | 2020-02-03 | 2020-06-12 | 长江存储科技有限责任公司 | Detection method and device |
| CN112635349A (en) * | 2020-12-21 | 2021-04-09 | 长江存储科技有限责任公司 | Method for measuring thickness of metal film on surface of wafer |
| CN112635349B (en) * | 2020-12-21 | 2022-04-12 | 长江存储科技有限责任公司 | Method for measuring thickness of metal film on surface of wafer |
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| CN101673659B (en) | 2011-06-15 |
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Granted publication date: 20110615 Termination date: 20180910 |