CN106024664A - Metal layer film thickness stack model calibration method and system - Google Patents
Metal layer film thickness stack model calibration method and system Download PDFInfo
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- CN106024664A CN106024664A CN201610355194.6A CN201610355194A CN106024664A CN 106024664 A CN106024664 A CN 106024664A CN 201610355194 A CN201610355194 A CN 201610355194A CN 106024664 A CN106024664 A CN 106024664A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention discloses a metal layer film thickness stack model calibration method and system. The method is based on an accurate metal layer chemical mechanical polishing model, metal layer thicknesses of different DOE wafers are predicted by changing input parameters of the model within the prediction ability scope of the model, and a required thickness of a monitor area is output and used in a spectral calibration process. According to the present invention, not only the calibration time is shortened, and the accuracy of the film thickness stack model is increased.
Description
Technical field
The present invention relates to integrated circuit technology and manufacture field, particularly relate to a kind of metal level thickness stacking model
The method and system of calibration.
Background technology
Due to the difference of metal level zones of different pattern density and unlike material, at CMP, (chemical machinery is thrown
Light) technique select than difference, metal thickness skewness after causing wafer chemical mechanical lapping to complete,
And the uneven electric property having a strong impact on interconnection circuit of metal thickness and the carrying out of subsequent optical carving technology.For
The change of effective monitoring metal layer thickness, can be by monitoring monitor after wafer chemical mechanical lapping on line
The thickness of pad judges whether this wafer meets technological requirement.
The calibration of present stage metal layer thickness thickness measurement model is under process stabilizing ground premise, according to DOE
(Designed Experiment, contrived experiment method) Wafer's (wafers of i.e. different grinding conditions)
(Scanning Electronic Microscopy/Transmission Electron Microscope, sweeps SEM/TEM
Retouch ultramicroscope/transmission electron microscope) section value calibration, i.e. cut by the SEM/TEM of actual product
Sheet obtains the one-tenth-value thickness 1/10 in monitoring region.As it is shown in figure 1, metal layer thickness thickness measurement model in prior art
Calibration steps step is as follows: prepare DOE Wafer (DOE wafer)；Collect DOE Wafer spectral information
Storehouse；Set up thickness stacking model；Carry out DOE Wafer thickness measure；SEM/TEM cuts into slices；Judgement is cut
Point positional accuracy also reads slice of data when correct；Judge whether error in measurement is less thanIf measuring
Error is less than, then thickness stacking model precision meets the requirements, and calibration completes, otherwise, then need weight
Newly set up thickness stacking model.
The metal layer thickness thickness measurement model calibration steps of prior art has the drawback which needs
Substantial amounts of Wafer (wafer) cuts into slices, and the cycle is long, consumes a large amount of manpower, material resources and financial resources, more additional section produces
Deformation and the deviation of artificial reading so that data reliability is all had a greatly reduced quality.
In sum, calibrate thickness stacking model owing to using slicing mode to go at present, the longest, put into big,
Efficiency is low, and the area size that section is checked is limited, the more additional deformation produced and the deviation of artificial reading of cutting into slices
All bringing bigger error to model calibration, therefore, the present invention proposes one and uses chemical metal layer accurately
Mechanical lapping model obtains the technological means of a series of model calibration data by changing section technological parameter, no
Only shorten the time of calibration, and improve the accuracy of thickness stacking model.
Summary of the invention
For the deficiency overcoming above-mentioned prior art to exist, the purpose of the present invention is to provide a kind of metal level thickness
The method and system of the calibration of stacking model, it uses the model of chemical metal layer mechanical lapping accurately by changing
Become some processes parameter and obtain a series of model calibration data, not only shorten the time of calibration, and improve
The accuracy of thickness stacking model.
For reaching above and other purpose, the present invention proposes the method for a kind of metal level thickness stacking model calibration,
The method is based on the model of chemical metal layer mechanical lapping accurately, in model prediction limit of power, by changing
The DOE chip metal layer thickness that varying model input parameter prediction is different, the thickness in the monitoring region needed for output,
And use it for spectroscopic calibration process.
Further, the method comprises the steps:
Step one, prepares DOE wafer；
Step 2, collects DOE wafer spectral information storehouse；
Step 3, according to DOE wafer spectral information, sets up thickness stacking model；
Step 4, carries out DOE wafer thickness measurement, and uses CMP model to be predicted layout data；
Step 5, extracts monitoring region predictive value calibration thickness model, contrast DOE wafer thickness measured value with
Difference between predictive value, carries out respective handling according to the result of contrast.
Further, in step one, this DOE wafer is by carrying out chemistry machine after trimming part division technique parameter
Tool grinds and obtains, and the process conditions wherein finely tuned include pressure or the milling time that CMP respectively walks.
Further, in step 4, carry out DOE wafer thickness measurement be utilize through heap fold initial
The DOE wafer that spectral measurement is different, obtains a series of film thickness value undetermined.
Further, in step 4, CMP model is used to be predicted layout data being to utilize CMP
Model Accurate Prediction metal layer image chemistry mechanical lapping complete after the change of metal layer thickness, wherein utilize
Initial conditions during CMP model model prediction is consistent with DOE Wafer grinding condition.
Further, in step 5, utilize the one-tenth-value thickness 1/10 in the monitoring region obtained by CMP model prediction
Go to calibrate the one-tenth-value thickness 1/10 that initial spectrum measures, the difference between contrast DOE wafer thickness measured value and predictive value
Different, if both difference differences are in default scope, then without revising thickness stacking model, otherwise, then need
Re-establish thickness stacking model.
Further, in step 3, set up thickness stacking model and i.e. stack spectrum internal model, be by DOE
The reflected signal that wafer is corresponding is analyzed setting up and may be used for measuring identical structure specific thickness mobility scale
Metal level film thickness value.
Further, identical structure can be Cu Pad structure, Cu Line Array structure or monolayer or
The thickness of more metal layers, this specific thickness mobility scale is by the thickness range in DOE wafer monitoring region certainly
Fixed.
For reaching above-mentioned purpose, the present invention also provides for a kind of metal level thickness stacking model calibration system, including:
Preparation unit, is used for preparing DOE wafer；
Spectral information collector unit, is used for collecting DOE wafer spectral information storehouse；
Unit set up by model, for according to DOE wafer spectral information, sets up thickness stacking model；
Thickness measure and predicting unit, be used for carrying out DOE wafer thickness measurement, and use CMP model pair
Layout data is predicted；
Calibration process unit, extracts monitoring region predictive value calibration thickness model, and contrast DOE wafer thickness is surveyed
Difference between value and predictive value, carries out respective handling according to the result of contrast.
Further, this calibration process unit utilizes the thickness in the monitoring region obtained by CMP model prediction
Value goes to calibrate the one-tenth-value thickness 1/10 that initial spectrum measures, the difference between contrast DOE wafer thickness measured value and predictive value
Different, if both difference differences are in default scope, then without revising thickness stacking model, otherwise, then need
Re-establish thickness stacking model.
Compared with prior art, the method and system of a kind of metal level of present invention thickness stacking model calibration are at gold
Belong in the layer predictable limit of power of cmp model, by simulation DOE (Design of
Experiments) the actual chemical mechanical milling tech of Wafer, can quickly be accurately obtained DOE Wafer prison
Control region one-tenth-value thickness 1/10, and be applied to thickness stacking model calibration during, have input little, time-consumingly
Few advantage, efficiency significantly improves.
Accompanying drawing explanation
Fig. 1 is the flow chart of steps of the method for the metal level thickness stacking model calibration of prior art；
Fig. 2 is the step stream of the preferred embodiment of the method for the present invention a kind of metal level thickness stacking model calibration
Cheng Tu；
Fig. 3 is the system architecture diagram of the present invention a kind of metal level thickness stacking model calibration system.
Detailed description of the invention
Below by way of specific instantiation accompanying drawings embodiments of the present invention, art technology
Personnel can be understood further advantage and effect of the present invention easily by content disclosed in the present specification.The present invention
Also can be implemented by other different instantiation or be applied, the every details in this specification also can base
In different viewpoints and application, under the spirit without departing substantially from the present invention, carry out various modification and change.
Fig. 2 is the step stream of the preferred embodiment of the method for the present invention a kind of metal level thickness stacking model calibration
Cheng Tu.As in figure 2 it is shown, the method for the present invention a kind of metal level thickness stacking model calibration, based on accurately
Chemical metal layer mechanical lapping model, in model prediction limit of power, by changing mode input parameter (i.e.
The grinding condition of simulation DOE Wafer) predict different DOE Wafer metal layer thickness, needed for output
The thickness in monitoring region, and uses it for spectroscopic calibration process, specifically includes following steps:
Step 201, prepares DOE Wafer (DOE wafer).This DOE Wafer is by fine setting part
Carrying out what cmp obtained after technological parameter, the process conditions wherein finely tuned include: CMP
The pressure of (Chemical Mechanical Planarization) respectively step or milling time etc.
Step 202, collects DOE Wafer spectral information storehouse.
Step 203, according to DOE Wafer spectral information, sets up thickness stacking model.I.e. in stacking spectrum
Portion's model, it may be used for measuring identical by reflected signal corresponding for DOE Wafer is analyzed foundation
The metal level film thickness value of structure specific thickness mobility scale, identical structure here can be Cu Pad structure,
Cu Line Array structure or the thickness of single or multiple lift metal level, specific thickness mobility scale is by DOE
The thickness range in Wafer monitoring region determines.
Step 204, carries out DOE Wafer thickness measure, and uses CMP model to carry out pre-to layout data
Survey.In this step, carrying out DOE Wafer thickness measure is to utilize the initial spectrum folded through heap to measure not
Same DOE Wafer, obtains a series of film thickness value undetermined, uses CMP model to carry out pre-to layout data
Survey, the change of metal layer thickness after i.e. utilizing CMP model Accurate Prediction metal layer image chemistry mechanical lapping to complete
Change, wherein utilize initial conditions during CMP model model prediction consistent with DOE Wafer grinding condition.
Step 205, extracts monitoring region predictive value calibration thickness model.That is, utilization is pre-by CMP model
The one-tenth-value thickness 1/10 in the monitoring region recorded goes to calibrate the one-tenth-value thickness 1/10 that initial spectrum measures, if both differences are necessarily
In the range of, then without revising thickness stacking model, otherwise, then need to re-establish thickness stacking model.
Step 206, the difference between contrast DOE Wafer thickness measure and predictive value, if both differences are less than
Predetermined threshold value, such as, then thickness stacking model precision meets the requirements, otherwise, then need again to build
Vertical thickness stacking model.
Fig. 3 is the system architecture diagram of the present invention a kind of metal level thickness stacking model calibration system.Such as Fig. 3 institute
Show, one metal level thickness of the present invention stacking model calibration system, including: preparation unit 301, spectral information
Collector unit 302, model set up unit 303, thickness measure and predicting unit 304, calibration and processing unit
305。
Wherein, preparation unit 301 is used for preparing DOE Wafer, and this DOE Wafer is by fine setting part
Carrying out what cmp obtained after technological parameter, the process conditions wherein finely tuned include: CMP
The pressure of (Chemical Mechanical Planarization) respectively step or milling time etc..
Spectral information collector unit 302, is used for collecting DOE Wafer spectral information, sets up spectral information storehouse.
Unit 303 set up by model, for according to DOE Wafer spectral information, sets up thickness stacking model.
I.e. stacking spectrum internal model, it is permissible by being analyzed reflected signal corresponding for DOE Wafer setting up
For measuring the metal level film thickness value of identical structure specific thickness mobility scale, identical structure here is permissible
It is Cu Pad (copper packing) structure, Cu Line Array (copper cash array) structure or single or multiple lift metal
The thickness of layer, specific thickness mobility scale is to be determined by the thickness range in DOE Wafer monitoring region.
Thickness measure and predicting unit 304, be used for carrying out DOE Wafer thickness measure, and use CMP mould
Layout data is predicted by type.Here carry out DOE Wafer thickness measure to utilize at the beginning of heap is folded
The DOE Wafer that beginning spectral measurement is different, obtains a series of film thickness value undetermined, uses CMP model to version
Diagram data is predicted, gold after i.e. utilizing CMP model Accurate Prediction metal layer image chemistry mechanical lapping to complete
Belong to the change of layer thickness, wherein utilize initial conditions during CMP model model prediction to grind with DOE Wafer
Grind consistent.
Calibration and processing unit 305, be used for extracting monitoring region predictive value calibration thickness model, and contrast DOE is brilliant
Difference between circle thickness measurements and predictive value, and carry out respective handling according to the result of contrast.That is, school
Accurate and processing unit 305 utilizes the one-tenth-value thickness 1/10 monitoring region obtained by CMP model prediction to go calibration initial
Spectrometric one-tenth-value thickness 1/10, the difference between contrast DOE wafer thickness measured value and predictive value, if both are poor
Different less than predetermined threshold value, such as, then judge that thickness stacking model precision meets the requirements, otherwise, then
Need to re-establish thickness stacking model.
In sum, the method and system of a kind of metal level of present invention thickness stacking model calibration are in metal stratification
Learn in the predictable limit of power of mechanical lapping model, by simulation DOE (Design of Experiments)
The actual chemical mechanical milling tech of Wafer, can quickly be accurately obtained the thickness in DOE Wafer monitoring region
Value, and during being applied to thickness stacking model calibration, have and put into little, the fewest advantage, effect
Rate significantly improves.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.
Above-described embodiment all can be carried out by any those skilled in the art under the spirit and the scope of the present invention
Modify and change.Therefore, the scope of the present invention, should be as listed by claims.
Claims (10)
1. the method for a metal level thickness stacking model calibration, it is characterised in that: the method is based on accurately
Chemical metal layer mechanical lapping model, in model prediction limit of power, pre-by changing mode input parameter
Survey different DOE chip metal layer thicknesses, the thickness in the monitoring region needed for output, and use it for spectrum
Calibration process.
The method of a kind of metal level thickness the most as claimed in claim 1 stacking model calibration, it is characterised in that
The method comprises the steps:
Step one, prepares DOE wafer；
Step 2, collects DOE wafer spectral information storehouse；
Step 3, according to DOE wafer spectral information, sets up thickness stacking model；
Step 4, carries out DOE wafer thickness measurement, and uses CMP model to be predicted layout data；
Step 5, extracts monitoring region predictive value calibration thickness model, contrast DOE wafer thickness measured value with
Difference between predictive value, carries out respective handling according to the result of contrast.
The method of a kind of metal level thickness the most as claimed in claim 2 stacking model calibration, it is characterised in that:
In step one, this DOE wafer carries out what cmp obtained by after trimming part division technique parameter,
The process conditions wherein finely tuned include pressure or the milling time that CMP respectively walks.
The method of a kind of metal level thickness the most as claimed in claim 2 stacking model calibration, it is characterised in that:
In step 4, carrying out DOE wafer thickness measurement is to utilize the initial spectrum folded through heap to measure different
DOE wafer, obtains a series of film thickness value undetermined.
The method of a kind of metal level thickness the most as claimed in claim 4 stacking model calibration, it is characterised in that:
In step 4, using CMP model to be predicted layout data is to utilize CMP model Accurate Prediction gold
Belong to the change of metal layer thickness after layer pattern cmp completes, wherein utilize CMP model model prediction
Time initial conditions consistent with DOE Wafer grinding condition.
The method of a kind of metal level thickness the most as claimed in claim 5 stacking model calibration, it is characterised in that:
In step 5, the one-tenth-value thickness 1/10 monitoring region obtained by CMP model prediction is utilized to go to calibrate initial spectrum
The one-tenth-value thickness 1/10 measured, the difference between contrast DOE wafer thickness measured value and predictive value, if both differences are poor
Different in default scope, then without revising thickness stacking model, otherwise, then need to re-establish thickness stacking
Model.
The method of a kind of metal level thickness the most as claimed in claim 2 stacking model calibration, it is characterised in that:
In step 3, set up thickness stacking model and i.e. stack spectrum internal model, be by corresponding for DOE wafer anti-
Penetrate signal to be analyzed setting up the metal level thickness that may be used for measuring identical structure specific thickness mobility scale
Value.
The method of a kind of metal level thickness the most as claimed in claim 7 stacking model calibration, it is characterised in that:
Identical structure can be Cu Pad structure, Cu Line Array structure or the thickness of single or multiple lift metal level
Degree, this specific thickness mobility scale is determined by the thickness range in DOE wafer monitoring region.
9. a metal level thickness stacking model calibration system, including:
Preparation unit, is used for preparing DOE wafer；
Spectral information collector unit, is used for collecting DOE wafer spectral information storehouse；
Unit set up by model, for according to DOE wafer spectral information, sets up thickness stacking model；
Thickness measure and predicting unit, be used for carrying out DOE wafer thickness measurement, and use CMP model pair
Layout data is predicted；
Calibration process unit, extracts monitoring region predictive value calibration thickness model, and contrast DOE wafer thickness is surveyed
Difference between value and predictive value, carries out respective handling according to the result of contrast.
10. a kind of metal level thickness stacking model calibration system as claimed in claim 9, it is characterised in that:
This calibration process unit utilizes the one-tenth-value thickness 1/10 monitoring region obtained by CMP model prediction to go to calibrate initial light
The one-tenth-value thickness 1/10 that spectrum measures, the difference between contrast DOE wafer thickness measured value and predictive value, if both differences
Difference is in default scope, then without revising thickness stacking model, otherwise, then need to re-establish thickness heap
Folded model.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109709774A (en) * | 2019-03-08 | 2019-05-03 | 上海华力微电子有限公司 | A method of for improving silicon warp degree and improving alignment precision |
| CN111276414A (en) * | 2020-02-03 | 2020-06-12 | 长江存储科技有限责任公司 | Detection method and device |
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