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CN106363824B - 晶片的薄化方法 - Google Patents

晶片的薄化方法 Download PDF

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CN106363824B
CN106363824B CN201610569364.0A CN201610569364A CN106363824B CN 106363824 B CN106363824 B CN 106363824B CN 201610569364 A CN201610569364 A CN 201610569364A CN 106363824 B CN106363824 B CN 106363824B
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chip
face
thinning
sic substrate
forming step
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CN106363824A (zh
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平田和也
西野曜子
森数洋司
卡尔·普利瓦西尔
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Disco Corp
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Abstract

提供晶片的薄化方法。对在SiC基板的第一面上具有形成有多个器件的器件区域和围绕器件区域的外周剩余区域的晶片进行薄化，具有：环状槽形成步骤，在第二面的对应于器件区域与外周剩余区域的边界部处残存出相当于晶片完工厚度的厚度而形成环状槽；分离起点形成步骤，从第二面将对于SiC基板具有透过性的波长的激光束的聚光点定位在相当于晶片完工厚度的位置并使聚光点与SiC基板相对地移动而对第二面照射激光束，在相当于晶片完工厚度的位置处形成改质层和裂痕而作为分离起点；和晶片薄化步骤，在实施了分离起点形成步骤之后，施加外力而从分离起点将具有第二面的晶片从具有形成有多个器件的第一面的晶片分离，而将具有第一面的晶片薄化。

Description

晶片的薄化方法
技术领域
本发明涉及晶片的薄化方法，该晶片是在SiC基板的正面形成有多个器件的晶片。
背景技术
在以硅基板为原材料的晶片的正面上层叠功能层，在该功能层上在由多条分割预定线划分出的区域内形成IC、LSI等各种器件。并且，在通过磨削装置对晶片的背面进行磨削而使晶片薄化至规定的厚度之后，通过切削装置、激光加工装置等加工装置对晶片的分割预定线实施加工，将晶片分割成各个器件芯片，分割得到的器件芯片被广泛应用于移动电话、个人计算机等各种电子设备。
并且，在以SiC基板为原材料的晶片的正面上层叠功能层，在该功能层上在由多条分割预定线划分出的区域内形成功率器件或者LED、LD等光器件。
并且，与上述的硅晶片同样，在通过磨削装置对晶片的背面进行磨削而使晶片薄化至规定的厚度之后，通过切削装置、激光加工装置等对晶片的分割预定线实施加工，晶片被分割成各个器件芯片，分割得到的器件芯片被广泛应用于各种电子设备。
与硅晶片同样，如上述那样，在将以SiC基板为原材料的晶片沿着分割预定线切断之前，对背面进行磨削而使晶片薄化至规定的厚度。近年来，为了实现电子设备的轻量化、小型化而要求晶片的厚度变得更薄，例如50μm左右。
磨削得这么薄的晶片其操作很困难，并存在在搬送等过程中破损的担心。因此，在日本特开2007-19379号公报中提出了如下的磨削方法：仅对晶片的与器件区域对应的背面进行磨削而形成圆形凹部，在与围绕着器件区域的外周剩余区域对应的晶片的背面形成环状加强部。
专利文献1：日本特开2002-373870号公报
专利文献2：日本特开2007-19379号公报
然而，存在如下的问题：与硅基板相比SiC基板的莫氏硬度非常高，当通过具有磨削磨具的磨削磨轮来对由SiC基板构成的晶片的背面进行磨削时，会磨损掉磨削量的4～5倍左右的磨削磨具，非常不经济。
例如，当对硅基板进行100μm磨削时磨削磨具会磨损0.1μm，与此相对，当对SiC基板进行100μm磨削时，磨削磨具会磨损400～500μm，与对硅基板进行磨削的情况相比磨损4000～5000倍。
发明内容
本发明是鉴于上述的点而完成的，其目的在于提供晶片的薄化方法，不对背面进行磨削而能够将正面上具有多个器件的由SiC基板构成的晶片薄化至规定的厚度。
根据本发明，提供一种晶片的薄化方法，该晶片的薄化方法对晶片进行薄化，其中，该晶片在SiC基板的第一面上具有形成有多个器件的器件区域以及围绕该器件区域的外周剩余区域，该SiC基板具有：所述第一面；位于该第一面的相反侧的第二面；从该第一面至该第二面的c轴；以及与该c轴垂直的c面，该晶片的薄化方法的特征在于，具有如下的步骤：环状槽形成步骤，在该第二面的对应于该器件区域与该外周剩余区域的边界部处残存出相当于薄化后的晶片的完工厚度的厚度而形成环状槽；分离起点形成步骤，从该第二面将对于SiC基板具有透过性的波长的激光束的聚光点定位在相当于晶片的完工厚度的位置，并且使该聚光点与SiC基板相对地移动而对该第二面照射激光束，在被该环状槽围绕的相当于晶片的完工厚度的位置形成改质层和从该改质层沿着c面伸长的裂痕而作为分离起点；以及晶片薄化步骤，在实施了该分离起点形成步骤之后，施加外力而从该分离起点将具有该第二面的晶片从具有形成有多个器件的该第一面的晶片分离，而对具有该第一面的晶片进行薄化，并且在与该外周剩余区域对应的位置形成环状的加强部，该分离起点形成步骤包含：改质层形成步骤，该c轴相对于该第二面的垂线倾斜偏离角，使激光束的聚光点沿着与在该第二面和该c面之间形成偏离角的第二方向垂直的第一方向相对地移动，而形成沿着第一方向伸长的直线状的改质层；以及转位步骤，在该第二方向上使该聚光点相对地移动而转位规定的量。
优选本发明的晶片的薄化方法还具有磨削步骤，在实施了晶片薄化步骤之后，对具有形成有多个器件的第一面的晶片的背面进行磨削而使其平坦化。
根据本发明的晶片的薄化方法，在被环状槽围绕的晶片的内部形成改质层和裂痕之后，对晶片施加外力而以改质层和裂痕为分离起点将晶片分离成两部分，因此能够容易地使具有形成有多个器件的第一面的晶片薄化。
因此，不用通过磨削磨具对由SiC基板形成的晶片的背面进行磨削便能够对晶片进行薄化，能够解决因磨削磨具发生磨损而导致的不经济的问题。进而，由于具有形成有多个器件的第一面的晶片在外周具有环状的加强部，所以通过该加强部来抑制晶片的破损。
在对利用本发明的晶片的薄化方法进行了薄化后的晶片的背面进行磨削而使其平坦化的情况下，将晶片的背面磨削至1～5μm左右即可，此时的磨削磨具的磨损量能够控制为4～25μm左右。进而，由于能够将分离后的具有第二面的晶片作为SiC基板而进行再利用，所以经济性好。
附图说明
图1是适合实施本发明的晶片的薄化方法的激光加工装置的立体图。
图2是激光束产生单元的框图。
图3的(A)是SiC锭的立体图，图3的(B)是其主视图。
图4是示出将保护带粘接到在正面具有多个器件的SiC晶片的正面上的情形的立体图。
图5的(A)是示出隔着粘接于正面的保护带将晶片载置到卡盘工作台上的状态的立体图，图5的(B)是被卡盘工作台吸引保持的晶片的立体图。
图6是示出环状槽形成步骤的立体图。
图7的(A)是在晶片的背面形成有环状槽的状态的立体图，图7的(B)是示出环状槽部分的晶片的剖视图。
图8是对分离起点形成步骤进行说明的立体图。
图9是SiC晶片背面的俯视图。
图10是对改质层形成步骤进行说明的示意性剖视图。
图11是对改质层形成步骤进行说明的示意性俯视图。
图12的(A)、(B)是对晶片薄化步骤进行说明的立体图(其一)。
图13是对晶片薄化步骤进行说明的立体图(其二)。
图14是示出对晶片的背面进行磨削而使其平坦化的磨削步骤的立体图。
图15是正面上粘接有保护带且背面经过磨削步骤实施了平坦化的SiC晶片的背面侧立体图。
标号说明
2：激光加工装置；11：SiC锭；13、37：第一定向平面；15、39：第二定向平面；19：c轴；21：c面；30：激光束照射单元；31：SiC晶片；36：聚光器(激光头)；41：保护带；43：改质层；45：裂痕；47：环状槽；49：分离面；76：磨削磨轮；82：磨削磨具。
具体实施方式
以下，参照附图对本发明的实施方式进行详细地说明。参照图1，示出了适合实施本发明的晶片的薄化方法的激光加工装置2的立体图。激光加工装置2包含以能够在X轴方向上移动的方式搭载在静止基台4上的第一滑动块6。
第一滑动块6借助由滚珠丝杠8和脉冲电动机10构成的加工进给机构12沿着一对导轨14在加工进给方向、即X轴方向上移动。
第二滑动块16以能够在Y轴方向上移动的方式搭载在第一滑动块6上。即，第二滑动块16借助由滚珠丝杠18和脉冲电动机20构成的分度进给机构22沿着一对导轨24在分度进给方向、即Y轴方向上移动。
具有吸引保持部26a的卡盘工作台26搭载在第二滑动块16上。卡盘工作台26能够借助加工进给机构12和分度进给机构22在X轴方向和Y轴方向上移动，并且借助收纳在第二滑动块16中的电动机而旋转。
在静止基台4上竖立设置有柱28，在该柱28上安装有激光束照射机构(激光束照射构件)30。激光束照射机构30由收纳在外壳32中的图2所示的激光束产生单元34和安装于外壳32的前端的聚光器(激光头)36构成。在外壳32的前端安装有具有显微镜和照相机的拍摄单元38，该拍摄单元38与聚光器36在X轴方向上排列。
如图2所示，激光束产生单元34包含振荡出YAG激光或者YVO4激光的激光振荡器40、重复频率设定构件42、脉冲宽度调整构件44以及功率调整构件46。虽然未特别地图示，但激光振荡器40具有布鲁斯特窗，从激光振荡器40射出的激光束是直线偏光的激光束。
借助激光束产生单元34的功率调整构件46被调整为规定的功率的脉冲激光束被聚光器36的镜48反射，进而通过聚光透镜50将聚光点定位在卡盘工作台26所保持的被加工物即SiC晶片31的内部而进行照射。
参照图3的(A)，示出了SiC锭(以下，有时简称为锭)11的立体图。图3的(B)是图3的(A)所示的SiC锭11的主视图。
锭11具有第一面(上表面)11a和处于第一面11a的相反侧的第二面(背面)11b。由于锭11的上表面11a是激光束的照射面，所以将其研磨成镜面。
锭11具有第一定向平面13和与第一定向平面13垂直的第二定向平面15。第一定向平面13的长度形成为比第二定向平面15的长度长。
锭11具有c轴19和与c轴19垂直的c面21，其中，该c轴19相对于上表面11a的垂线17向第二定向平面15方向倾斜偏离角α。c面21相对于锭11的上表面11a倾斜偏离角α。通常在锭11中，与较短的第二定向平面15的伸长方向垂直的方向是c轴的倾斜方向。
在锭11中按照锭11的分子级设定有无数个c面21。在本实施方式中，偏离角α被设定为4°。然而，偏离角α不限于4°，能够在例如1°～6°的范围内自由地设定而制造出锭11。
再次参照图1，在静止基台4的左侧固定有柱52，在该柱52上经由形成于柱52的开口53以能够在上下方向上移动的方式搭载有按压机构54。
参照图4，示出了在SiC晶片31的正面31a上粘接保护带41的情形的立体图。SiC晶片(以下，有时简称为晶片)31是通过线切割机对图3所示的SiC锭11进行切片而得到的晶片，具有大约700μm的厚度。
在晶片31的正面31a被实施了镜面加工之后，通过光刻法在正面31a上形成功率器件等多个器件35。在由形成为格子状的多条分割预定线33划分的各区域内形成各器件35。在晶片31的正面31a上具有形成有多个器件35的器件区域35a和围绕着器件区域35a的外周剩余区域31c。
SiC晶片31具有第一定向平面37和与第一定向平面37垂直的第二定向平面39。第一定向平面37的长度形成为比第二定向平面39的长度长。
这里，由于SiC晶片31是通过线切割机对图3所示的SiC锭11进行切片而得到的晶片，所以第一定向平面37与锭11的第一定向平面13对应，第二定向平面39与锭11的第二定向平面15对应。
并且，晶片31具有c轴19和与c轴19垂直的c面21(参照图3)，该c轴19相对于正面31a的垂线向第二定向平面39方向倾斜偏离角α。c面21相对于晶片31的正面31a倾斜偏离角α。在该SiC晶片31中，与较短的第二定向平面39的伸长方向垂直的方向是c轴19的倾斜方向。
在将保护带41粘接于晶片31的正面31a之后，如图5的(A)所示，使保护带41侧朝下而将晶片31载置到切削装置的卡盘工作台60上，使负压作用于卡盘工作台60的吸引保持部60a，如图5的(B)所示，将晶片31吸引保持在卡盘工作台60上，使晶片31的背面31b露出。
并且，如图6所示，一边使切削单元62的切削刀具64按照箭头A方向高速旋转一边将其切入相当于晶片31的器件区域35a与外周剩余区域31c的边界部的晶片31的背面31b，一边使卡盘工作台60按照箭头B方向慢慢地旋转，一边残存出相当于薄化后的晶片31的完工厚度的厚度而在背面31b上形成图7的(A)所示的环状槽47。
如图7的(B)的剖视图所示，由于晶片31的厚度t1为700μm，薄化后的晶片31的完工厚度t2为50μm，所以环状槽47的深度为650μm。
在实施了环状槽形成步骤之后，将晶片31吸引保持在激光加工装置2的卡盘工作台26上，如图8和图9所示，以晶片31的第二定向平面39对准X轴方向的方式使保持晶片31的卡盘工作台26旋转。
即，如图9所示，以与第二定向平面39平行的箭头A方向对准X轴方向的方式使卡盘工作台26旋转，即，该箭头A方向是与形成有偏离角α的方向Y1垂直的方向，换言之该方向Y1为c轴19与正面31a的交点19a相对于晶片31的正面31a的垂线17所存在的方向。
由此，沿着与形成有偏离角α的方向垂直的方向A扫描激光束。换言之，与形成有偏离角α的方向Y1垂直的A方向为卡盘工作台26的加工进给方向。
在本发明的晶片的薄化方法中，将从聚光器36射出的激光束的扫描方向设定为与晶片31的形成有偏离角α的方向Y1垂直的箭头A方向是很重要的。
即，本发明的晶片的薄化方法的特征在于探索出了如下的情况：通过将激光束的扫描方向设定为上述这样的方向，从形成于晶片31的内部的改质层传播的裂痕沿着c面21非常长地伸长。
在本实施方式的晶片的薄化方法中，首先，实施分离起点形成步骤，从由SiC基板构成的晶片31的环状槽47内的第二面(背面)31b将对于保持在卡盘工作台26上的晶片31具有透过性的波长(例如1064nm的波长)的激光束的聚光点定位在相当于晶片的完工厚度的位置，并且使聚光点与晶片31相对地移动而对背面31b照射激光束，形成与正面31a平行的改质层43以及从改质层43沿着c面21传播的裂痕45而作为分离起点。
该分离起点形成步骤包含：改质层形成步骤，如图9所示，使激光束的聚光点在图9的与箭头Y1方向垂直的方向即A方向上相对地移动，而如图10所示在晶片31的环状槽47内的内部形成改质层43和从改质层43沿着c面21传播的裂痕45，其中，图9的箭头Y1方向为在c面21和背面31b之间形成有偏离角α的方向，该偏离角α为c轴19相对于背面31b的垂线17倾斜的角度；以及转位步骤，如图11所示，使聚光点在形成有偏离角的方向即Y轴方向上相对地移动而转位进给规定的量。
如图10和图11所示，当在X轴方向上直线状形成改质层43时，裂痕45从改质层43的两侧沿着c面21传播而形成。在本实施方式的晶片的薄化方法中包含转位量设定步骤，对从直线状的改质层43起在c面21方向上传播而形成的裂痕45的宽度进行测量，并设定聚光点的转位量。
在转位量设定步骤中，如图10所示，在将从直线状的改质层43起在c面方向上传播而形成在改质层43的单侧的裂痕45的宽度设为W1的情况下，将应进行转位的规定的量W2设定为W1以上2W1以下。
这里，按照以下的方式对优选的实施方式的分离起点形成步骤的激光加工条件进行设定。
光源：Nd：YAG脉冲激光
波长：1064nm
重复频率：80kHz
平均输出：3.2W
脉冲宽度：4ns
光斑直径：10μm
聚光透镜的数值孔径(NA)：0.45
转位量：400μm
在上述的激光加工条件中，在图10中，从改质层43沿着c面21传播的裂痕45的宽度W1被设定为大致250μm，转位量W2被设定为400μm。
然而，激光束的平均输出不限于3.2W，在本实施方式的加工方法中，将平均输出设定为2W～4.5W而得到了良好的结果。在平均输出为2W的情况下，裂痕45的宽度W1为大致100μm，在平均输出为4.5W的情况下，裂痕45的宽度W1为大致350μm。
由于在平均输出不到2W的情况以及比4.5W大的情况下不能在晶片31的内部形成良好的改质层43，所以优选所照射的激光束的平均输出在2W～4.5W的范围内，在本实施方式中对晶片31照射平均输出3.2W的激光束。在图10中，将形成改质层43的聚光点距背面31b的深度D1设定为650μm。
如图11所示，如果完成了一边以规定的量进行转位进给一边在晶片31的整个区域的距背面31b的深度为D1的位置上形成多个改质层43和从改质层43沿着c面21伸长的裂痕45，则实施晶片薄化步骤：施加外力而从由改质层43和裂痕45构成的分离起点将晶片分离，从而将在正面31a上具有多个器件35的晶片薄化至大约50μm左右。
该晶片薄化步骤通过例如图12所示的按压机构54来实施。按压机构54包含：头部56，其通过内置在柱52内的移动机构在上下方向上移动；以及按压部件58，如图12的(B)所示，其相对于头部56按照箭头R方向旋转。
如图12的(A)所示，将按压机构54定位在保持于卡盘工作台26上的晶片31的上方，如图12的(B)所示，使头部56下降直到按压部件58压接于晶片31的环状槽47内的背面31b为止。
在将按压部件58压接于晶片31的背面31b的状态下，当按压部件58按照箭头R方向旋转时，在晶片31中产生扭转应力，晶片31从形成有改质层43和裂痕45的分离起点断裂，如图13所示，能够将晶片31分离为保持在卡盘工作台26上的晶片31A和晶片31B。
在保持于卡盘工作台26上的晶片31A的背面即分离面49上残存有改质层43和裂痕45的一部分，如图13和图14所示，在分离面49上形成有微细的凹凸。因此，在本发明的晶片的薄化方法中，优选实施对晶片31A的背面即分离面49进行磨削而使其平坦化的磨削步骤。
在该磨削步骤中，如图14所示，利用磨削装置的卡盘工作台68隔着保护带41对晶片31A进行吸引保持而使分离面49露出。磨削装置的磨削单元70包含：主轴72，其由电动机旋转驱动；轮安装座74，其固定在主轴72的前端；以及磨削磨轮76，其通过多个螺钉78以能够装拆的方式安装在轮安装座74上。磨削磨轮76由环状的磨轮基台80和固定安装于磨轮基台80的下端部外周的多个磨削磨具82构成。
在磨削步骤中，一边使卡盘工作台68按照箭头a所示的方向以例如300rpm旋转，一边使磨削磨轮76按照箭头b所示的方向以例如6000rpm旋转，并且驱动磨削单元进给机构而使磨削磨轮76的磨削磨具82与晶片31A的分离面49接触。
并且，一边对磨削磨轮76以规定的磨削进给速度(例如0.1μm/s)朝向下方按照规定的量进行磨削进给，一边对晶片31A的分离面49进行磨削而使其平坦化。由此，如图15所示，对于晶片31A的背面31b而言，将残存的改质层43和裂痕45去除而变为平坦面。
在对薄化后的晶片31A的背面进行磨削而使其平坦化的情况下，将晶片31A的背面磨削至1～5μm左右即可，能够将磨削磨具72的磨损量控制在4～25μm左右。
关于磨削步骤结束后的晶片31A，如图15所示，通过上述的晶片薄化步骤对与器件区域35a对应的晶片31A的背面进行薄化而形成圆形凹部51，通过磨削步骤将圆形凹部51的底面51a加工成平坦面。
由于与外周剩余区域对应的晶片31A的背面残存下来而形成有环状的加强部53，所以防止了晶片31A的破损，容易操作。并且，由于能够将图13中从晶片31A分离出的晶片31B作为SiC基板而进行再利用，所以非常经济。

Claims (2)

1.一种晶片的薄化方法，该晶片的薄化方法对晶片进行薄化，其中，该晶片在SiC基板的第一面上具有形成有多个器件的器件区域以及围绕该器件区域的外周剩余区域，该SiC基板具有：所述第一面；位于该第一面的相反侧的第二面；从该第一面至该第二面的c轴；以及与该c轴垂直的c面，该晶片的薄化方法的特征在于，具有如下的步骤：
环状槽形成步骤，在该第二面的对应于该器件区域与该外周剩余区域的边界部处残存出相当于薄化后的晶片的完工厚度的厚度而形成环状槽；
分离起点形成步骤，从该第二面将对于SiC基板具有透过性的波长的激光束的聚光点定位在相当于晶片的完工厚度的位置，并且使该聚光点与SiC基板相对地移动而对该第二面照射激光束，在被该环状槽围绕的相当于晶片的完工厚度的位置形成改质层和从该改质层沿着c面伸长的裂痕而作为分离起点；以及
晶片薄化步骤，在实施了该分离起点形成步骤之后，施加外力而从该分离起点将具有该第二面的晶片从具有形成有多个器件的该第一面的晶片分离，而对具有该第一面的晶片进行薄化，并且在与该外周剩余区域对应的位置形成环状的加强部，
该分离起点形成步骤包含：
改质层形成步骤，该c轴相对于该第二面的垂线倾斜偏离角，使激光束的聚光点沿着与在该第二面和该c面之间形成偏离角的第二方向垂直的第一方向与SiC基板相对地移动，而形成沿着第一方向伸长的直线状的改质层；以及
转位步骤，在该第二方向上使该聚光点与SiC基板相对地移动而转位规定的量。
2.根据权利要求1所述的晶片的薄化方法，其中，
该晶片的薄化方法还具有磨削步骤，在实施了该晶片薄化步骤之后，对具有形成有多个器件的该第一面的晶片的背面进行磨削而使其平坦化。
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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6478821B2 (ja) * 2015-06-05 2019-03-06 株式会社ディスコ ウエーハの生成方法
DE102016116241A1 (de) * 2016-08-31 2018-03-01 Infineon Technologies Ag Verfahren zum bearbeiten eines wafers und verfahren zum bearbeiten eines trägers
JP6914587B2 (ja) * 2017-05-25 2021-08-04 株式会社ディスコ ウェーハの加工方法
JP7267923B2 (ja) * 2017-09-04 2023-05-02 リンテック株式会社 薄型化板状部材の製造方法、及び薄型化板状部材の製造装置
US10388526B1 (en) * 2018-04-20 2019-08-20 Semiconductor Components Industries, Llc Semiconductor wafer thinning systems and related methods
US11121035B2 (en) 2018-05-22 2021-09-14 Semiconductor Components Industries, Llc Semiconductor substrate processing methods
US10896815B2 (en) 2018-05-22 2021-01-19 Semiconductor Components Industries, Llc Semiconductor substrate singulation systems and related methods
US20190363018A1 (en) 2018-05-24 2019-11-28 Semiconductor Components Industries, Llc Die cleaning systems and related methods
US10468304B1 (en) 2018-05-31 2019-11-05 Semiconductor Components Industries, Llc Semiconductor substrate production systems and related methods
US11830771B2 (en) 2018-05-31 2023-11-28 Semiconductor Components Industries, Llc Semiconductor substrate production systems and related methods
TWI837149B (zh) * 2018-07-19 2024-04-01 日商東京威力科創股份有限公司 基板處理系統及基板處理方法
KR20210100168A (ko) 2018-12-21 2021-08-13 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
CN113165109B (zh) * 2018-12-21 2023-06-27 东京毅力科创株式会社 基板处理装置和基板处理方法
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
CN109979808B (zh) * 2019-03-14 2021-04-06 北京大学深圳研究生院 一种减薄碳化硅片的方法、装置及其应用
TW202040722A (zh) 2019-03-28 2020-11-01 日商東京威力科創股份有限公司 處理裝置及處理方法
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7224456B2 (ja) * 2019-05-23 2023-02-17 東京エレクトロン株式会社 基板処理方法及び基板処理システム
TW202107553A (zh) * 2019-07-18 2021-02-16 日商東京威力科創股份有限公司 處理裝置及處理方法
JP7266953B2 (ja) * 2019-08-07 2023-05-01 株式会社ディスコ 保護部材形成方法及び保護部材形成装置
JP7412131B2 (ja) 2019-10-28 2024-01-12 東京エレクトロン株式会社 基板処理方法及び基板処理システム
JP7386075B2 (ja) * 2019-12-25 2023-11-24 東京エレクトロン株式会社 基板処理方法及び基板処理システム
US20220020705A1 (en) 2020-07-20 2022-01-20 Western Digital Technologies, Inc. Semiconductor wafer thinned by stealth lasing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009061462A (ja) * 2007-09-05 2009-03-26 Sumitomo Electric Ind Ltd 基板の製造方法および基板
JP2013049161A (ja) * 2011-08-30 2013-03-14 Hamamatsu Photonics Kk 加工対象物切断方法

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223692A (en) 1991-09-23 1993-06-29 General Electric Company Method and apparatus for laser trepanning
FR2716303B1 (fr) 1994-02-11 1996-04-05 Franck Delorme Laser à réflecteurs de Bragg distribués, accordable en longueur d'onde, à réseaux de diffraction virtuels activés sélectivement.
US5561544A (en) 1995-03-06 1996-10-01 Macken; John A. Laser scanning system with reflecting optics
TW350095B (en) 1995-11-21 1999-01-11 Daido Hoxan Inc Cutting method and apparatus for semiconductor materials
US6245161B1 (en) * 1997-05-12 2001-06-12 Silicon Genesis Corporation Economical silicon-on-silicon hybrid wafer assembly
JP2000094221A (ja) 1998-09-24 2000-04-04 Toyo Advanced Technologies Co Ltd 放電式ワイヤソー
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
US6720522B2 (en) 2000-10-26 2004-04-13 Kabushiki Kaisha Toshiba Apparatus and method for laser beam machining, and method for manufacturing semiconductor devices using laser beam machining
JP4731050B2 (ja) 2001-06-15 2011-07-20 株式会社ディスコ 半導体ウエーハの加工方法
TWI261358B (en) 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
ATE518242T1 (de) 2002-03-12 2011-08-15 Hamamatsu Photonics Kk Methode zur trennung von substraten
US6992765B2 (en) 2002-10-11 2006-01-31 Intralase Corp. Method and system for determining the alignment of a surface of a material in relation to a laser beam
TWI520269B (zh) 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
US7427555B2 (en) 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
US20040144301A1 (en) 2003-01-24 2004-07-29 Neudeck Philip G. Method for growth of bulk crystals by vapor phase epitaxy
JP2005268752A (ja) 2004-02-19 2005-09-29 Canon Inc レーザ割断方法、被割断部材および半導体素子チップ
US20050217560A1 (en) 2004-03-31 2005-10-06 Tolchinsky Peter G Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same
US20080070380A1 (en) 2004-06-11 2008-03-20 Showda Denko K.K. Production Method of Compound Semiconductor Device Wafer
JP2006108532A (ja) * 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2006187783A (ja) 2005-01-05 2006-07-20 Disco Abrasive Syst Ltd レーザー加工装置
JP2006315017A (ja) 2005-05-11 2006-11-24 Canon Inc レーザ切断方法および被切断部材
JP4809632B2 (ja) 2005-06-01 2011-11-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2007019379A (ja) 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
JP4749799B2 (ja) 2005-08-12 2011-08-17 浜松ホトニクス株式会社 レーザ加工方法
US9138913B2 (en) 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
JP4183093B2 (ja) 2005-09-12 2008-11-19 コバレントマテリアル株式会社 シリコンウエハの製造方法
WO2007055010A1 (ja) 2005-11-10 2007-05-18 Renesas Technology Corp. 半導体装置の製造方法および半導体装置
US20070111480A1 (en) 2005-11-16 2007-05-17 Denso Corporation Wafer product and processing method therefor
WO2007087354A2 (en) 2006-01-24 2007-08-02 Baer Stephen C Cleaving wafers from silicon crystals
JP5073962B2 (ja) * 2006-05-12 2012-11-14 株式会社ディスコ ウエーハの加工方法
JP2007329391A (ja) * 2006-06-09 2007-12-20 Disco Abrasive Syst Ltd 半導体ウェーハの結晶方位指示マーク検出機構
US8980445B2 (en) 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
TW200827600A (en) * 2006-12-22 2008-07-01 Jin-Fa Yan The leakage prevention method of a hydraulic magnetron
JP2008283025A (ja) * 2007-05-11 2008-11-20 Disco Abrasive Syst Ltd ウエーハの分割方法
EP2009687B1 (en) * 2007-06-29 2016-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device
JP5011072B2 (ja) 2007-11-21 2012-08-29 株式会社ディスコ レーザー加工装置
US8338218B2 (en) 2008-06-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module
JP2010021398A (ja) 2008-07-11 2010-01-28 Disco Abrasive Syst Ltd ウェーハの処理方法
JP5692969B2 (ja) 2008-09-01 2015-04-01 浜松ホトニクス株式会社 収差補正方法、この収差補正方法を用いたレーザ加工方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム
JP5601778B2 (ja) * 2009-02-19 2014-10-08 信越ポリマー株式会社 半導体ウェーハの製造方法
US8728916B2 (en) 2009-02-25 2014-05-20 Nichia Corporation Method for manufacturing semiconductor element
CN105023973A (zh) 2009-04-21 2015-11-04 泰特拉桑有限公司 形成太阳能电池中的结构的方法
JP5537081B2 (ja) 2009-07-28 2014-07-02 浜松ホトニクス株式会社 加工対象物切断方法
JP5379604B2 (ja) 2009-08-21 2013-12-25 浜松ホトニクス株式会社 レーザ加工方法及びチップ
JP2011165766A (ja) 2010-02-05 2011-08-25 Disco Abrasive Syst Ltd 光デバイスウエーハの加工方法
JP5558128B2 (ja) 2010-02-05 2014-07-23 株式会社ディスコ 光デバイスウエーハの加工方法
JP5370262B2 (ja) 2010-05-18 2013-12-18 豊田合成株式会社 半導体発光チップおよび基板の加工方法
US8722516B2 (en) 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
RU2459691C2 (ru) * 2010-11-29 2012-08-27 Юрий Георгиевич Шретер Способ отделения поверхностного слоя полупроводникового кристалла (варианты)
JP5480169B2 (ja) * 2011-01-13 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
JP5904720B2 (ja) 2011-05-12 2016-04-20 株式会社ディスコ ウエーハの分割方法
JP5912287B2 (ja) 2011-05-19 2016-04-27 株式会社ディスコ レーザー加工方法およびレーザー加工装置
JP5912293B2 (ja) 2011-05-24 2016-04-27 株式会社ディスコ レーザー加工装置
KR20130026810A (ko) * 2011-09-06 2013-03-14 주식회사 이오테크닉스 레이저 가공 방법
JP5878330B2 (ja) 2011-10-18 2016-03-08 株式会社ディスコ レーザー光線の出力設定方法およびレーザー加工装置
TWI509709B (zh) * 2011-11-08 2015-11-21 United Microelectronics Corp 半導體結構之製作方法
US8747982B2 (en) 2011-12-28 2014-06-10 Sicrystal Aktiengesellschaft Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course
WO2013126927A2 (en) * 2012-02-26 2013-08-29 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
JP6004705B2 (ja) * 2012-04-02 2016-10-12 株式会社ディスコ 接着フィルム付きチップの形成方法
JP2014041924A (ja) 2012-08-22 2014-03-06 Hamamatsu Photonics Kk 加工対象物切断方法
US9093566B2 (en) * 2012-12-31 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. High efficiency FinFET diode
JP6090998B2 (ja) 2013-01-31 2017-03-08 一般財団法人電力中央研究所 六方晶単結晶の製造方法、六方晶単結晶ウエハの製造方法
WO2014179368A1 (en) 2013-04-29 2014-11-06 Solexel, Inc. Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate
JP6341639B2 (ja) * 2013-08-01 2018-06-13 株式会社ディスコ 加工装置
US20150121960A1 (en) 2013-11-04 2015-05-07 Rofin-Sinar Technologies Inc. Method and apparatus for machining diamonds and gemstones using filamentation by burst ultrafast laser pulses
US9850160B2 (en) 2013-12-17 2017-12-26 Corning Incorporated Laser cutting of display glass compositions
JP2015119076A (ja) * 2013-12-19 2015-06-25 信越ポリマー株式会社 内部加工層形成単結晶部材およびその製造方法
US9757815B2 (en) 2014-07-21 2017-09-12 Rofin-Sinar Technologies Inc. Method and apparatus for performing laser curved filamentation within transparent materials
JP6390898B2 (ja) 2014-08-22 2018-09-19 アイシン精機株式会社 基板の製造方法、加工対象物の切断方法、及び、レーザ加工装置
RU2674916C2 (ru) 2014-10-13 2018-12-14 Эвана Текнолоджис, Уаб Способ лазерной обработки для разделения или скрайбирования подложки путем формирования клиновидных поврежденных структур
US10307867B2 (en) 2014-11-05 2019-06-04 Asm Technology Singapore Pte Ltd Laser fiber array for singulating semiconductor wafers
JP6358941B2 (ja) 2014-12-04 2018-07-18 株式会社ディスコ ウエーハの生成方法
JP5917677B1 (ja) * 2014-12-26 2016-05-18 エルシード株式会社 ＳｉＣ材料の加工方法
JP6395613B2 (ja) 2015-01-06 2018-09-26 株式会社ディスコ ウエーハの生成方法
JP6395633B2 (ja) 2015-02-09 2018-09-26 株式会社ディスコ ウエーハの生成方法
JP6395634B2 (ja) 2015-02-09 2018-09-26 株式会社ディスコ ウエーハの生成方法
JP6425606B2 (ja) 2015-04-06 2018-11-21 株式会社ディスコ ウエーハの生成方法
JP6472333B2 (ja) 2015-06-02 2019-02-20 株式会社ディスコ ウエーハの生成方法
JP6482389B2 (ja) 2015-06-02 2019-03-13 株式会社ディスコ ウエーハの生成方法
JP6482423B2 (ja) 2015-07-16 2019-03-13 株式会社ディスコ ウエーハの生成方法
JP6486240B2 (ja) 2015-08-18 2019-03-20 株式会社ディスコ ウエーハの加工方法
JP6486239B2 (ja) 2015-08-18 2019-03-20 株式会社ディスコ ウエーハの加工方法
JP6602207B2 (ja) 2016-01-07 2019-11-06 株式会社ディスコ ＳｉＣウエーハの生成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009061462A (ja) * 2007-09-05 2009-03-26 Sumitomo Electric Ind Ltd 基板の製造方法および基板
JP2013049161A (ja) * 2011-08-30 2013-03-14 Hamamatsu Photonics Kk 加工対象物切断方法

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US10319593B2 (en) 2019-06-11
JP2017024039A (ja) 2017-02-02
TWI696539B (zh) 2020-06-21
KR102419485B1 (ko) 2022-07-08
CN106363824A (zh) 2017-02-01
TW201722668A (zh) 2017-07-01
DE102016213249A1 (de) 2017-01-26
KR20170012025A (ko) 2017-02-02

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