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CN104362118A - 一种液刀清洗装置 - Google Patents

一种液刀清洗装置 Download PDF

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Publication number
CN104362118A
CN104362118A CN201410682980.8A CN201410682980A CN104362118A CN 104362118 A CN104362118 A CN 104362118A CN 201410682980 A CN201410682980 A CN 201410682980A CN 104362118 A CN104362118 A CN 104362118A
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liquid cutter
cleaning device
liquid
slanting baffle
substrate
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CN104362118B (zh
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李登涛
郑载润
王世凯
金童燮
许亚东
梁渲祺
王华东
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Hefei Xinsheng Optoelectronics Technology Co Ltd
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Publication of CN104362118A publication Critical patent/CN104362118A/zh
Priority to EP15778593.2A priority patent/EP3226283B1/en
Priority to US14/786,072 priority patent/US10157754B2/en
Priority to PCT/CN2015/076288 priority patent/WO2016082419A1/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods

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  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

本发明公开了一种液刀清洗装置，以提高基板的均一性，进而提高产品品质。液刀清洗装置包括：固定于清洗腔室侧壁的防溅罩；液刀，位于防溅罩的下方；斜挡板，位于防溅罩和液刀之间，斜挡板的较高侧与清洗腔室的侧壁固定连接，斜挡板的较低侧与液刀的刀口顶部固定连接。斜挡板可将液刀和传送滚轮上的基板与大部分水汽隔离，滴落在斜挡板上的液滴可沿斜挡板的斜面流下，而不会滴落在液刀尚未冲洗的基板上。相比于现有技术，本方案可大大减少液滴对基板均一性的影响，从而提高了产品品质。

Description

一种液刀清洗装置
技术领域
本发明涉及显示面板制造技术领域，特别是涉及一种液刀清洗装置。
背景技术
在平板显示装置中，TFT-LCD(Thin Film Transistor Liquid Crystal Display，薄膜晶体管液晶显示器，简称TFT-LCD)具有体积小、功耗低、制造成本相对较低和无辐射等特点，在当前的平板显示器市场占据了主导地位。随着玻璃基板的尺寸大型化，为保证产品的合格率，每一步制造工艺都面临着更大的挑战。
湿法刻蚀是显示面板制造过程中的重要一环，其利用刻蚀液刻蚀掉基板表面未覆盖光刻胶的金属区域，从而形成具有一定图案的金属层。如图1所示，湿法刻蚀后对基板进行清洗的设备包括液刀清洗装置100和喷淋装置200。在液刀清洗装置100中，液刀14的刀口为线状，可喷射出均匀的去离子水幕，从而对传送滚轮10上的基板13进行快速冲洗，去掉基板13上残留的刻蚀液。喷淋装置200设置在液刀清洗装置100的下游，包含多个喷头201，喷头201喷洒出的去离子水可对传送滚轮10上的基板进行淋洗，从而将基板进一步清洗干净。
如图1所示，现有的液刀清洗装置100主要包括：支撑板24、L形防溅罩11和液刀14，其中：支撑板24与清洗腔室的侧壁16固定连接，防溅罩11的顶板与支撑板24固定连接，液刀14设置在防溅罩11的下方，刀口朝向传送滚轮10。
上述现有技术存在的缺陷在于，液刀清洗装置100在工作时，水汽极易在防溅罩11的下方以及液刀14的G角处凝结成液滴，液滴滴落在基板13上会对残留的刻蚀液进行轻度稀释，从而使刻蚀液与基板再次发生刻蚀反应。这在一定程度上影响了基板的均一性，进而影响到产品品质。
发明内容
本发明实施例的目的是提供一种液刀清洗装置，以提高基板的均一性，进而提高产品品质。
本发明实施例所提供的液刀清洗装置，包括：
防溅罩，固定于清洗腔室的侧壁；
液刀，位于防溅罩的下方；
斜挡板，位于防溅罩和液刀之间，所述斜挡板的较高侧与清洗腔室的侧壁固定连接，所述斜挡板的较低侧与液刀的刀口顶部固定连接。
在本发明实施例的技术方案中，斜挡板可将液刀和传送滚轮上的基板与大部分水汽隔离，滴落在斜挡板上的液滴可沿斜面流下，而不会滴落在液刀尚未冲洗的基板上。相比于现有技术，本方案可大大减少液滴对基板均一性的影响，提高了产品品质。
优选的，所述斜挡板包括至少两节平板单元；相邻两节平板单元的上表面交汇处设置有竖挡板，所述竖挡板与较高一节的平板单元形成第一导流槽。第一导流槽可快速地将汇聚的去离子水导向液刀清洗装置的两侧。
优选的，所述斜挡板的较高侧与清洗腔室的侧壁之间具有第一密封垫。第一密封垫可以防止液滴从斜挡板与清洗腔室侧壁的缝隙处流下，从而防止液滴滴落在基板上，对基板的均一性产生不良影响。
优选的，所述斜挡板的较低侧与液刀的刀口顶部之间具有第二密封垫，所述斜挡板、第二密封垫和液刀的刀口顶部之间形成第二导流槽。该第二导流槽可快速地将斜挡板下表面汇聚的去离子水导向液刀清洗装置的两侧。
较佳的，液刀清洗装置还包括：与清洗腔室的侧壁固定连接的支撑板，所述支撑板的上表面具有第三导流槽；所述防溅罩的顶板与所述支撑板的上表面固定连接。当防溅罩与支撑板之间的缝隙处渗入去离子水时，可快速的通过该第三导流槽排向液刀清洗装置的两侧。
优选的，所述液刀的刀口朝向相邻两个传送滚轮之间的间隙。这样，当传送滚轮上未放置基板时，液刀刀口喷出的去离子水幕不会冲击传送滚轮，从而减少了液体回溅，有效减少了水汽的产生。
较佳的，液刀清洗装置还包括：位于液刀的刀口下方的竖挡板，所述竖挡板的高度低于传送滚轮的传送平面。在对基板进行清洗之前，需要先使液刀工作一段时间，使去离子水幕喷出均匀。设置竖挡板可有效减少液体的回溅，从而减少水汽的产生。
较佳的，液刀清洗装置还包括：位于斜挡板下方、传送滚轮上方的吹散管；以及向吹散管中鼓入气流的鼓风装置。鼓风装置可以在传送滚轮上未放置基板时向吹散管中鼓入干冷气流，从而使吹散管将斜挡板下方的水汽吹散，减少液滴的凝结。
更佳的，所述吹散管的管壁分布有多个出气孔。鼓入吹散管中的干冷气流可以从多个出气孔吹出，从而可以从多个方向将斜挡板下方的水汽吹散，吹散效果更佳。
附图说明
图1为现有清洗设备结构示意图；
图2为包含本发明一种实施例的液刀清洗装置的清洗设备结构示意图；
图3为包含本发明另一种实施例的液刀清洗装置的清洗设备结构示意图；
图4为包含本发明又一种实施例的液刀清洗装置的清洗设备结构示意图；
图5为一实施例中吹散管结构示意图。
附图标记：
100-液刀清洗装置(现有技术)；24-支撑板(现有技术)；200-喷淋装置；201-喷头；100’-液刀清洗装置；24’-支撑板；10-传送滚轮；11-防溅罩；11a-顶板；11b-侧板；12-液滴；13-基板；14-液刀；15-斜挡板；16-清洗腔室的侧壁；17-平板单元；18-竖挡板；19-第一密封垫；20-第二密封垫；21-第一导流槽；22-第二导流槽；23-第三导流槽；25-竖挡板；26-吹散管；27-出气孔。
具体实施方式
为了提高基板的均一性，进而提高产品品质，本发明实施例提供了一种液刀清洗装置。在本发明技术方案中，防溅罩和液刀之间设置有斜挡板，该斜挡板的较高侧与清洗腔室的侧壁固定连接，该斜挡板的较低侧与液刀的刀口顶部固定连接。斜挡板可将液刀和传送滚轮上的基板与大部分水汽隔离，滴落在斜挡板上的液滴可沿斜面流下，而不会滴落在液刀尚未冲洗的基板上。因此，本方案可大大减少液滴对基板均一性的影响，提高了产品品质。为使本发明的目的、技术方案和优点更加清楚，以下举实施例对本发明作进一步详细说明。
如图2所示，本发明实施例提供了一种液刀清洗装置100’，包括：
防溅罩11，固定于清洗腔室的侧壁16；
液刀14，位于防溅罩11的下方；
斜挡板15，位于防溅罩11和液刀14之间，斜挡板15的较高侧与清洗腔室的侧壁16固定连接，斜挡板15的较低侧与液刀14的刀口顶部固定连接。
防溅罩11可以防止喷淋装置200喷洒出的去离子水溅落到液刀14、斜挡板15以及待进行清洗的基板13上，同时也对罩外的水汽起到一定的隔离作用。防溅罩11的具体形状不限，在图2至图4所示实施例的技术方案中，防溅罩11呈L形，包括顶板11a和侧板11b，其中顶板11a固定于清洗腔室的侧壁16。
如图2所示，基板13沿图示箭头方向向左侧传送(传送滚轮10逆时针转动)。液刀14设置在防溅罩11的下方并靠近防溅罩11的侧板11b，即靠近液刀清洗装置100’的出口处。液刀14通过向基板13喷射去离子水幕，从而快速冲洗掉基板13上残留的刻蚀液。基板13在经过去离子水幕冲洗后被传送到喷淋装置200的下方，继续进行去离子水淋洗。
斜挡板15的具体形状不限，可以理解地，其宽度应大于基板13的宽度(这里宽度是指垂直于基板13传送方向的水平尺寸)。为了让大部分水汽与液刀14和基板13隔离，斜挡板15的位置应尽可能的低。
在本发明实施例的技术方案中，斜挡板15可将液刀14和传送滚轮10上的基板13与大部分水汽隔离，滴落在斜挡板15上的液滴12可沿斜挡板15的斜面流下，而不会滴落在尚未冲洗的基板13上。相比于现有技术，本方案可大大减少液滴对基板均一性的影响，提高了产品品质。
如图3所示，斜挡板15的板体可以为一平板。如图2和图4所示的实施例，斜挡板15也可以包括至少两节平板单元17；相邻两节平板单元17的上表面交汇处设置有竖挡板18，竖挡板18与较高一节的平板单元形成第一导流槽21(V形槽)。滴落在较高一节平板单元上的液滴可在重力作用下沿斜面流入第一导流槽21内，并快速排向液刀清洗装置100’的两侧(排水方向垂直于图面方向)。平板单元17的数量可根据防溅罩11内的实际空间来设计。如图4所示，该实施例中，斜挡板15包括三节平板单元17，相邻两节平板单元17的上表面交汇处设置有竖挡板18。
斜挡板15的较高侧与清洗腔室的侧壁16可以通过紧固件实现固定连接。请继续参照图2所示，在该实施例中，斜挡板15的较高侧与清洗腔室的侧壁16之间具有第一密封垫19。第一密封垫19可以防止液滴从斜挡板15与清洗腔室侧壁16的缝隙处流下，从而防止液滴滴落在基板13上，对基板的均一性产生不良影响。
此外，斜挡板15的较低侧与液刀14的刀口顶部之间具有第二密封垫20，斜挡板15、第二密封垫20和液刀14的刀口顶部之间形成第二导流槽22。当斜挡板15的下表面凝结有液滴时，液滴可在重力作用下沿斜面流入第二导流槽22内，并快速排向液刀清洗装置100’的两侧。
在现有技术中，如图1所示，防溅罩11与支撑板24之间的缝隙处极易渗入去离子水，这些去离子水滴落在基板13上也会影响到基板的均一性，进而影响到产品品质。针对该技术问题，在本发明图2所示的优选实施例中，液刀清洗装置100’还进一步包括：与清洗腔室的侧壁16固定连接的支撑板24’，支撑板24’的上表面具有第三导流槽23；防溅罩11的顶板11a与支撑板24’的上表面固定连接。防溅罩11的顶板11a与支撑板24’之间可以通过紧固件实现固定连接。当防溅罩11与支撑板24’之间的缝隙处渗入去离子水时，可快速的通过该第三导流槽23排向液刀清洗装置100’的两侧。第三导流槽23的具体形状不限，可以为U形槽，V形槽或者矩形槽等等。此外，防溅罩11的顶板11a也可以直接与清洗腔室的侧壁16密封连接，以将喷淋产生的液滴隔离在防溅罩11的外侧。
液刀14在刚启动时，喷出的去离子水幕不够均匀、稳定，因此不适于对基板进行冲洗。通常的做法是，先使液刀14启动一段时间，待去离子水幕均匀、稳定后，再将基板13传送至液刀清洗装置100’的下方进行清洗。如图1所示，在现有技术中，液刀14的刀口朝向传送滚轮10，当传送滚轮10上未放置基板时，去离子水幕冲击传送滚轮10会产生回溅，这加重了防溅罩11内水汽的产生，从而对产品品质造成不良影响。如图2至图4所示，在本发明实施例的技术方案中，液刀14的刀口朝向相邻两个传送滚轮10之间的间隙。这样，当传送滚轮10上未放置基板时，液刀14刀口喷出的去离子水幕不会冲击到传送滚轮10，从而减少了液体回溅，进而有效减少了水汽的产生。
此外，为了进一步加强防回溅效果，液刀清洗装置100’还可包括：位于液刀14的刀口下方的竖挡板25，竖挡板25的高度应低于传送滚轮10的传送平面。设置竖挡板25可有效减少液体的回溅，从而减少水汽的产生。
如图2和图4所示，作为本发明实施例的一个优选方案，液刀清洗装置100’还可包括：位于斜挡板15下方、传送滚轮10上方的吹散管26；以及向吹散管26中鼓入气流的鼓风装置(图中未示出)。鼓风装置可以在传送滚轮10上未放置基板时向吹散管26中鼓入干冷气流，从而使吹散管26将斜挡板15下方的水汽吹散，减少液滴的凝结。如图5所示，更佳的，吹散管26的管壁分布有多个出气孔27，鼓入吹散管26中的干冷气流可以从多个出气孔27吹出，从而可以从多个方向将斜挡板15下方的水汽吹散，吹散效果更佳。采用该方案，液刀14的G角处也不易凝结液滴。
值得一提的是，本发明实施例所提供的技术方案也可以用在其它类似清洗工艺中。斜挡板的下方不易凝结液滴，从而减少了液滴滴落对工艺或产品品质造成的影响。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (9)

1.一种液刀清洗装置，其特征在于，包括：
防溅罩，固定于清洗腔室的侧壁；
液刀，位于防溅罩的下方；
斜挡板，位于防溅罩和液刀之间，所述斜挡板的较高侧与清洗腔室的侧壁固定连接，所述斜挡板的较低侧与液刀的刀口顶部固定连接。
2.如权利要求1所述的液刀清洗装置，其特征在于，所述斜挡板包括至少两节平板单元；相邻两节平板单元的上表面交汇处设置有竖挡板，所述竖挡板与较高一节的平板单元形成第一导流槽。
3.如权利要求1所述的液刀清洗装置，其特征在于，所述斜挡板的较高侧与清洗腔室的侧壁之间具有第一密封垫。
4.如权利要求1所述的液刀清洗装置，其特征在于，所述斜挡板的较低侧与液刀的刀口顶部之间具有第二密封垫，所述斜挡板、第二密封垫和液刀的刀口顶部之间形成第二导流槽。
5.如权利要求1～4任一项所述的液刀清洗装置，其特征在于，还包括与清洗腔室的侧壁固定连接的支撑板，所述支撑板的上表面具有第三导流槽；所述防溅罩的顶板与所述支撑板的上表面固定连接。
6.如权利要求1～4任一项所述的液刀清洗装置，其特征在于，所述液刀的刀口朝向相邻两个传送滚轮之间的间隙。
7.如权利要求1～4任一项所述的液刀清洗装置，其特征在于，还包括：位于液刀的刀口下方的竖挡板，所述竖挡板的高度低于传送滚轮的传送平面。
8.如权利要求1～4任一项所述的液刀清洗装置，其特征在于，还包括：
位于斜挡板下方、传送滚轮上方的吹散管；以及向吹散管中鼓入气流的鼓风装置。
9.如权利要求8所述的液刀清洗装置，其特征在于，所述吹散管的管壁分布有多个出气孔。
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