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ATA473180A - Verfahren zur kristallzüchtung - Google Patents

Verfahren zur kristallzüchtung

Info

Publication number
ATA473180A
ATA473180A AT0473180A AT473180A ATA473180A AT A473180 A ATA473180 A AT A473180A AT 0473180 A AT0473180 A AT 0473180A AT 473180 A AT473180 A AT 473180A AT A473180 A ATA473180 A AT A473180A
Authority
AT
Austria
Prior art keywords
crystal growing
growing method
crystal
growing
Prior art date
Application number
AT0473180A
Other languages
English (en)
Other versions
AT398582B (de
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12133979A external-priority patent/JPS5850951B2/ja
Priority claimed from JP857680A external-priority patent/JPS56104795A/ja
Priority claimed from JP857880A external-priority patent/JPS5850953B2/ja
Priority claimed from JP857780A external-priority patent/JPS56105628A/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of ATA473180A publication Critical patent/ATA473180A/de
Application granted granted Critical
Publication of AT398582B publication Critical patent/AT398582B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
AT0473180A 1979-09-20 1980-09-22 Verfahren zur kristallzüchtung AT398582B (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP12133979A JPS5850951B2 (ja) 1979-09-20 1979-09-20 結晶の成長方法とこれに用いる結晶成長装置
JP857680A JPS56104795A (en) 1980-01-28 1980-01-28 Device for pulling up crystal
JP857880A JPS5850953B2 (ja) 1980-01-28 1980-01-28 結晶成長法
JP857780A JPS56105628A (en) 1980-01-28 1980-01-28 Liquid phase epitaxial growth

Publications (2)

Publication Number Publication Date
ATA473180A true ATA473180A (de) 1994-05-15
AT398582B AT398582B (de) 1994-12-27

Family

ID=27454973

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0473180A AT398582B (de) 1979-09-20 1980-09-22 Verfahren zur kristallzüchtung

Country Status (9)

Country Link
US (2) US4619730A (de)
AT (1) AT398582B (de)
CA (1) CA1177367A (de)
DE (1) DE3035267A1 (de)
FR (1) FR2465802B1 (de)
GB (1) GB2059932B (de)
IT (1) IT1141064B (de)
NL (1) NL8005228A (de)
SE (1) SE8006569L (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0244799B2 (ja) * 1981-10-26 1990-10-05 Sony Corp Ketsushoseichohoho
US4597949A (en) * 1983-03-31 1986-07-01 Massachusetts Institute Of Technology Apparatus for growing crystals
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
US4659423A (en) * 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation
JP2561072B2 (ja) * 1986-04-30 1996-12-04 東芝セラミツクス株式会社 単結晶の育成方法及びその装置
JPS6385087A (ja) * 1986-09-25 1988-04-15 Sony Corp 結晶成長方法
JP2651481B2 (ja) * 1987-09-21 1997-09-10 株式会社 半導体エネルギー研究所 超伝導材料の作製方法
JPH0431386A (ja) * 1990-05-25 1992-02-03 Shin Etsu Handotai Co Ltd 半導体単結晶引上方法
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
US5394830A (en) * 1993-08-27 1995-03-07 General Electric Company Apparatus and method for growing long single crystals in a liquid encapsulated Czochralski process
JP2760957B2 (ja) * 1995-03-24 1998-06-04 科学技術振興事業団 融液中の対流場を制御した単結晶育成方法
KR0149287B1 (ko) * 1995-04-17 1998-10-15 심상철 실리콘 단결정 제조장치 및 그를 이용한 실리콘 단결정의 제조방법
JPH0920595A (ja) * 1995-07-04 1997-01-21 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置
DE19652543A1 (de) * 1996-12-17 1998-06-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Silicium-Einkristalls und Heizvorrichtung zur Durchführung des Verfahrens
JP2885240B1 (ja) * 1998-03-16 1999-04-19 日本電気株式会社 半導体結晶育成装置および育成方法
JPH11268987A (ja) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶およびその製造方法
JPH11314997A (ja) * 1998-05-01 1999-11-16 Shin Etsu Handotai Co Ltd 半導体シリコン単結晶ウェーハの製造方法
DE10103691A1 (de) * 2001-01-26 2002-08-08 Crystal Growing Systems Gmbh Elektrische Energieversorgung für eine elektrische Heizung
DE10118482B4 (de) * 2001-04-12 2006-05-24 Siltronic Ag Verfahren zur Herstellung eines Einkristalls
WO2007122736A1 (ja) * 2006-04-25 2007-11-01 Ebis Corporation 鋳造方法及び装置
JP5167651B2 (ja) * 2007-02-08 2013-03-21 信越半導体株式会社 遮熱部材下端面と原料融液面との間の距離の測定方法、及びその距離の制御方法
US20100140558A1 (en) * 2008-12-09 2010-06-10 Bp Corporation North America Inc. Apparatus and Method of Use for a Top-Down Directional Solidification System

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1143543A (de) * 1900-01-01
FR1111544A (fr) * 1953-07-28 1956-03-01 Siemens Ag Procédé et dispositif pour la fabrication de cristaux par extraction de masses fondues et cristaux conformes à ceux obtenus
US3173765A (en) * 1955-03-18 1965-03-16 Itt Method of making crystalline silicon semiconductor material
BE625139A (de) * 1961-11-23
US3464812A (en) * 1966-03-29 1969-09-02 Massachusetts Inst Technology Process for making solids and products thereof
US3607139A (en) * 1968-05-02 1971-09-21 Air Reduction Single crystal growth and diameter control by magnetic melt agitation
JPS4949307B1 (de) * 1970-02-18 1974-12-26
US3664812A (en) * 1970-03-16 1972-05-23 Allied Chem Purification of hydrogen peroxide
US3842895A (en) * 1972-01-10 1974-10-22 Massachusetts Inst Technology Metal alloy casting process to reduce microsegregation and macrosegregation in casting
US4010064A (en) * 1975-05-27 1977-03-01 International Business Machines Corporation Controlling the oxygen content of Czochralski process of silicon crystals by sandblasting silica vessel

Also Published As

Publication number Publication date
FR2465802B1 (fr) 1985-11-08
SE8006569L (sv) 1981-03-21
NL8005228A (nl) 1981-03-24
GB2059932A (en) 1981-04-29
IT8024803A0 (it) 1980-09-19
FR2465802A1 (fr) 1981-03-27
DE3035267A1 (de) 1981-04-02
IT1141064B (it) 1986-10-01
CA1177367A (en) 1984-11-06
GB2059932B (en) 1983-10-12
DE3035267C2 (de) 1992-06-11
US4622211A (en) 1986-11-11
US4619730A (en) 1986-10-28
AT398582B (de) 1994-12-27

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Legal Events

Date Code Title Description
MK07 Expiry

Effective date: 20120515